scholarly journals Interface-Induced Plasmon Nonhomogeneity in Nanostructured Metal-Dielectric Planar Metamaterial

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
A. I. Kovalev ◽  
D. L. Wainstein ◽  
A. Yu. Rashkovskiy ◽  
R. Gago ◽  
F. Soldera ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Electronic States ◽  
Energy Losses ◽  
Critical Layer Thickness ◽  
Characteristic Energy ◽  
X Ray ◽  
Nanostructured Metal

Transformations of the electronic structure in thin silver layers in metal-dielectric (TiAlN/Ag) multilayer nanocomposite were investigated by a set of electron spectroscopy techniques. Localization of the electronic states in the valence band and reduction of electron concentration in the conduction band was observed. This led to decreasing metallic properties of silver in the thin films. A critical layer thickness of 23.5 nm associated with the development of quantum effects was determined by X-ray photoelectron spectroscopy. Scanning Auger electron microscopy of characteristic energy losses provided images of plasmon localization in the Ag layers. The nonuniformity of plasmon intensities distribution near the metal-nitride interfaces was assessed experimentally.

Improvement of Strength and Reliability of Structural Ceramic through Ion Implantations

1993 ◽  
Vol 316 ◽  
Author(s):  
Rabi S. Bhattacharya ◽  
A.K. Rai
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ion Pairs ◽  
Structural Ceramic ◽  
Flexure Strength ◽  
X Ray ◽  
Transmission Electron ◽  
Ion Species

ABSTRACTThe feasibility of strength and reliability improvements of Si3N4 through ion implantations has been studied. The approach has been to implant elements that may chemically combine with themselves to form precipitates after appropriate annealing. These precipitates can improve the strength and reliability of ceramics through the introduction of a compressive stress in the implanted surface layer and/or by modifying the fracture originating machining flaws. Sequential implantations of ion pairs of Ti+ and C+, and Si+ and C+ were performed at energies in the range 46 to 175 keV and at doses of 1×1017 cm-2 for each ion species. Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and Transmission electron microscopy (TEM) techniques were used to analyze the implanted layer. Strength and reliability were determined from four-point flexure strength measurements. Precipitates of TiN and C were found to form in Ti++C+ and Si++C+ implanted Si3N4 surfaces, respectively. Si++C+ implantation resulted in improvements of both strength and reliability of Si3N4, while Ti++C+ implantations had no effect.

An Analytical Electron Microscopy and surface analysis study of diamond films

1990 ◽  
Vol 48 (4) ◽  
pp. 1090-1091
Author(s):  
A.E. Henderson ◽  
A.G. Fitzgerald ◽  
S.M. Potrous ◽  
B.E. Storey
Keyword(s):  
Electron Microscopy ◽  
Auger Electron Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Analytical Electron Microscopy ◽  
Diamond Films ◽  
Chemical Vapour ◽  
Crystal Silicon ◽  
X Ray

The formation of diamond films by plasma assisted chemical vapour deposition (PACVD) techniques has become an area of intense interest over the past few years. These films have potential applications in optical devices, microelectronics and as wear resistant coatings. To exploit the unique properties of these diamond coatings they must be fully characterized.In this investigation polycrystalline diamond films produced by PACVD, on single crystal silicon substrates have been studied by a range of microbeam analytical techniques. Surface analyses have been made in a VG Microscopes HB100 UHV SEM by Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). Depth composition profiles have been made by Auger electron spectroscopy. The silicon-diamond interface region has been investigated by x-ray microanalysis in a JEOL T300 SEM. The diamond films were prepared for transmission electron microscopy by dissolving away the silicon substrate in an HF/nitric acid solution. The resulting free standing diamond film was ion thinned to produce electron transparent areas. The thinned film was then sandwiched in a folding electron microscope grid for analysis in a JEOL 100C STEM.

Sol-Gel AL2O3 Coatings on SiC Fiber

1991 ◽  
Vol 249 ◽  
Author(s):  
Youming Xiao ◽  
Beng Jit Tan ◽  
Steven L. Suib ◽  
Francis S. Galasso
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sic Fiber ◽  
Sol Gel Process ◽  
Scanning Electron

ABSTRACTCoating of SiC (BP-SIGMA) fibers with alumina by a sol-gel process did not cause degradation even after heating to 1000°C in air for 24 h. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Auger electron spectroscopy (AES) and scanning electron microscopy (SEM ) methods were used to study the coating fiber interface.

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