Improvement of Strength and Reliability of Structural Ceramic through Ion Implantations

1993 ◽  
Vol 316 ◽  
Author(s):  
Rabi S. Bhattacharya ◽  
A.K. Rai
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ion Pairs ◽  
Structural Ceramic ◽  
Flexure Strength ◽  
X Ray ◽  
Transmission Electron ◽  
Ion Species

ABSTRACTThe feasibility of strength and reliability improvements of Si3N4 through ion implantations has been studied. The approach has been to implant elements that may chemically combine with themselves to form precipitates after appropriate annealing. These precipitates can improve the strength and reliability of ceramics through the introduction of a compressive stress in the implanted surface layer and/or by modifying the fracture originating machining flaws. Sequential implantations of ion pairs of Ti+ and C+, and Si+ and C+ were performed at energies in the range 46 to 175 keV and at doses of 1×1017 cm-2 for each ion species. Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and Transmission electron microscopy (TEM) techniques were used to analyze the implanted layer. Strength and reliability were determined from four-point flexure strength measurements. Precipitates of TiN and C were found to form in Ti++C+ and Si++C+ implanted Si3N4 surfaces, respectively. Si++C+ implantation resulted in improvements of both strength and reliability of Si3N4, while Ti++C+ implantations had no effect.

The Distribution of Phosphorus in Romano-British Ironwork

1990 ◽  
Vol 185 ◽  
Author(s):  
Alain E. Kaloyeros ◽  
Robert M. Ehrenreich
Keyword(s):  
Electron Microscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Materials Analysis ◽  
X Ray ◽  
Transmission Electron ◽  
Depth Study ◽  
Iron Artifacts ◽  
And Performance ◽  
Secondary Ion

AbstractPhosphorus is found to be a common impurity in many of the iron tools and weapons produced during the pre-Roman and Roman Iron Ages of Britain (600 BC - 300 AD). The effects of this impurity on the properties and performance of antiquarian materials is not well understood, however. This paper presents the initial findings of an in-depth study of the distribution, chemistry, and effects of phosphorus in Romano-British ironwork. For this purpose, two Romano-British iron artifacts from the site of Ircheoter, Northamptonshire, were examined using powerful techniques for archeological materials analysis that include electron microprobe, secondary ion mass spectroscopy (SIMS), transmission electron microscopy (TEM) with energydispersive x-ray spectroscopy capabilities (EDXS), and Auger electron spectroscopy (AES). It was found that phosphorous was indeed present in the artifacts. The phosphorus atoms were predominantly segregated at grain boundaries and thus should have led to a lowering of grain boundary cohesion and a degradation in the performance of the tools.

scholarly journals Interface-Induced Plasmon Nonhomogeneity in Nanostructured Metal-Dielectric Planar Metamaterial

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
A. I. Kovalev ◽  
D. L. Wainstein ◽  
A. Yu. Rashkovskiy ◽  
R. Gago ◽  
F. Soldera ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Electronic States ◽  
Energy Losses ◽  
Critical Layer Thickness ◽  
Characteristic Energy ◽  
X Ray ◽  
Nanostructured Metal

Transformations of the electronic structure in thin silver layers in metal-dielectric (TiAlN/Ag) multilayer nanocomposite were investigated by a set of electron spectroscopy techniques. Localization of the electronic states in the valence band and reduction of electron concentration in the conduction band was observed. This led to decreasing metallic properties of silver in the thin films. A critical layer thickness of 23.5 nm associated with the development of quantum effects was determined by X-ray photoelectron spectroscopy. Scanning Auger electron microscopy of characteristic energy losses provided images of plasmon localization in the Ag layers. The nonuniformity of plasmon intensities distribution near the metal-nitride interfaces was assessed experimentally.

A Review of Diffusion and Interfacial Reactions in Sandwich Thin-Film Couples

2013 ◽  
Vol 344 ◽  
pp. 107-128 ◽  
Author(s):  
Amitava Ghorai ◽  
D. Roy
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Direct Methods ◽  
Interfacial Reactions ◽  
X Ray ◽  
Force Microscopy ◽  
Transmission Electron

In this paper different techniques for sandwich thin film production, characterization and interfacial reactions have been reviewed in order to understand the kinetic behaviour in the above systems. The contact and composite resistance measurements are the indirect methods for this purpose, while X-ray diffraction studies (XRD), Transmission electron microscopy (TEM), Scanning electron microscopy (SEM), Rutherford backscattering (RBS), Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS), ion sputtering spectrometry (ISS), X-ray photoelectron spectroscopy (XPS) which is also referred to as electron spectroscopy for chemical analysis (ESCA) and atomic force microscopy (AFM) are some of the direct methods. Trends indicate that interfacial reactions start at room temperature.

Microstructures and interdiffusions of Pt/Ti electrodes with respect to annealing in the oxygen ambient

1995 ◽  
Vol 10 (7) ◽  
pp. 1790-1794 ◽  
Author(s):  
Kyu Ho Park ◽  
Cha Yeon Kim ◽  
Young Woo Jeong ◽  
Hyun Ja Kwon ◽  
Kwang Young Kim ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Annealed Sample ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Layer Structures ◽  
Degree Of Oxidation ◽  
Increasing Temperature

The microstructural variation and the interdiffusion of Pt (80 nm)/Ti (70 nm)/SiO2/Si during annealing in O2 were investigated using Auger electron spectroscopy, x-ray diffraction, transmission electron microscopy, and scanning electron microscopy. While the as-deposited and 400 °C annealed samples showed well-defined layer structures without any significant interfacial reaction, the degree of oxidation remarkably increased with increasing temperature above 500 °C. The PtTi alloy phase with Pmma structure (AuCd type) was observed from the 500 °C annealed sample. Drastic interdiffusion occurring above 600 °C changed the Pt/Ti bilayer into a very entangled structure. Some TiO2 phases were exposed to the ambient between Pt hillocks. In addition, a small amount of Pt-silicide was found near the TiOx/SiO2 interface.

Modifications in the Course of Reaction Between Co and GaAs Due To The Presence of a Ge Film

1987 ◽  
Vol 102 ◽  
Author(s):  
M. Genut ◽  
M. Eizenberg
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Spectroscopy ◽  
Gaas Substrate ◽  
Auger Electron ◽  
Metal Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Crystal Gaas

ABSTRACTModifications in the course of reaction between Co thin films and single crystal GaAs substrate due to the addition of a Ge film either on top or below the metal layer have been studied. The microstructure and phase formation for the systems: Co/GaAs, Co/Ge/GaAs, and Ge/Co/GaAs have been studied by Auger electron spectroscopy, transmission electron microscopy and X-ray diffraction.

An Analytical Electron Microscopy and surface analysis study of diamond films

1990 ◽  
Vol 48 (4) ◽  
pp. 1090-1091
Author(s):  
A.E. Henderson ◽  
A.G. Fitzgerald ◽  
S.M. Potrous ◽  
B.E. Storey
Keyword(s):  
Electron Microscopy ◽  
Auger Electron Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Analytical Electron Microscopy ◽  
Diamond Films ◽  
Chemical Vapour ◽  
Crystal Silicon ◽  
X Ray

The formation of diamond films by plasma assisted chemical vapour deposition (PACVD) techniques has become an area of intense interest over the past few years. These films have potential applications in optical devices, microelectronics and as wear resistant coatings. To exploit the unique properties of these diamond coatings they must be fully characterized.In this investigation polycrystalline diamond films produced by PACVD, on single crystal silicon substrates have been studied by a range of microbeam analytical techniques. Surface analyses have been made in a VG Microscopes HB100 UHV SEM by Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). Depth composition profiles have been made by Auger electron spectroscopy. The silicon-diamond interface region has been investigated by x-ray microanalysis in a JEOL T300 SEM. The diamond films were prepared for transmission electron microscopy by dissolving away the silicon substrate in an HF/nitric acid solution. The resulting free standing diamond film was ion thinned to produce electron transparent areas. The thinned film was then sandwiched in a folding electron microscope grid for analysis in a JEOL 100C STEM.

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