scholarly journals CMOS Realization of All-Positive Pinched Hysteresis Loops

Complexity ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-15 ◽  
Author(s):  
B. J. Maundy ◽  
A. S. Elwakil ◽  
C. Psychalinos

Two novel nonlinear circuits that exhibit an all-positive pinched hysteresis loop are proposed. These circuits employ two NMOS transistors, one of which operates in its triode region, in addition to two first-order filter sections. We show the equivalency to a charge-controlled resistance (memristance) in a decremental state via detailed analysis. Simulation and experimental results verify the proposed theory.

2013 ◽  
Vol 278-280 ◽  
pp. 1081-1090 ◽  
Author(s):  
Dalibor Biolek ◽  
Zdenek Biolek ◽  
Viera Biolkova ◽  
Zdenek Kolka

The pinched hysteresis loop belongs to the fingerprints of the so-called mem-systems, their well-known special cases being memristors. The memory effect of the system is determined by the area of the curve lobes which gradually decrease with increasing repeating frequency of the excitation signal. The paper describes a method for automated computation of the above areas via the commonly utilized OrCAD PSpice simulation software with the help of special measuring functions of the PROBE postprocessor. The usefulness of the method is illustrated on an example of the analysis of a TiO2 memristor.


2016 ◽  
Vol 26 (02) ◽  
pp. 1750029 ◽  
Author(s):  
Zehra Gulru Cam ◽  
Herman Sedef

In this paper, a new floating analog memristance simulator circuit based on second generation current conveyors and passive elements is proposed. Theoretical derivations are presented which decribe the circuit characteristics. The hardware of proposed simulator circuit is built using commercially available components. Theoretical derivations are validated with PSPICE simulation and experimental results. Performance of circuit was tested with simple example circuits. All results show that proposed simulator circuit provides frequency dependent pinched hysteresis loop and nonvolatility features. Exciting frequency, minimum and maximum memristance values and memristance range can be adjustable with simple passive element values. Simulator circuit has a frequency range of 1[Formula: see text]Hz to 40[Formula: see text]kHz.


2019 ◽  
Vol 28 (10) ◽  
pp. 1950166 ◽  
Author(s):  
Rajeev Kumar Ranjan ◽  
Pankaj Kumar Sharma ◽  
Sagar ◽  
Niranjan Raj ◽  
Bharti Kumari ◽  
...  

A charge-controlled memristor emulator circuit based on one kind of active device [operational transconductance amplifier (OTA)] using CMOS technology is introduced in this paper. The proposed circuit can be configured in both incremental and decremental types by using a simple switch. The memristor behavior can be electronically tuned by adjusting the transconductance of the OTAs. By changing the value of the capacitor, the pinched hysteresis loop observed in the current versus voltage plane can be held at higher frequencies. The proposed emulator circuit functions well up to 500 kHz. The experiment has been performed using commercially available OTA ICs (CA3080). The experimental demonstration has been carried out for 10, 20 and 120[Formula: see text]kHz. A simple high-pass filter is explained in both configurations to demonstrate the functionality of the proposed memristor emulator. The proposed circuit has been simulated in PSPICE using 0.5-[Formula: see text]m CMOS parameter. The simulated and experimental results validate the theoretical proposition.


Author(s):  
Aneet Singh ◽  
Shireesh Kumar Rai

This paper presents six different meminductor emulator circuits based on operational amplifiers. Five circuits of meminductor emulators have been proposed using two operational amplifiers, one memristor, three resistors and one capacitor, whereas the sixth circuit uses two operational amplifiers, two memristors, one resistor and two capacitors. All circuits of the proposed meminductor emulators are very simple over most of the realizations of meminductor emulators in the literature. The behaviors of meminductor emulators are satisfactory over a wide range of frequencies. The proposed configurations of meminductor emulators have been simulated by the LTspice tool. The SPICE models of both operational amplifier (AD711) and memristor have been used for simulation. The workability of the proposed meminductor emulators has also been verified using the basic and well-known structure of operational amplifier. In addition, the pinched hysteresis loop obtained by the simulation results of meminductor emulator has been achieved by the experimental results as well. Chaotic oscillator has been designed using the proposed meminductor emulator to prove the worthiness of the design.


2018 ◽  
Vol 45 (2) ◽  
pp. 222 ◽  
Author(s):  
Alexander G. Volkov ◽  
Eunice K. Nyasani

Leon Chua postulated the theory of a memristor – a resistor with memory – in 1971, and the first solid-state memristor was built in 2008. Memristors exist in vivo as components of plasma membranes in plants, fruits, roots and seeds. A memristor is a nonlinear element; its current-voltage characteristic is similar to that of a Lissajous pattern. Here, we found memristors in flowers. Electrostimulation by bipolar periodic sinusoidal or triangular waves of an androecium, a spur, petals and a pedicel in Sunpatiens flowers induces hysteresis loops with a pinched point at low frequencies between 0.1 mHz and 1 mHz. At high frequencies, the pinched hysteresis loop transforms to a non-pinched hysteresis loop instead of a single line I = U/R for ideal memristors because the amplitude of electrical current depends on capacitance of a flower’s tissue and electrodes, frequency and direction of scanning. The discovery of memristors in Sunpatiens (Impatiens spp.) creates a new direction in the modelling and understanding of electrophysiological phenomena in flowers.


2020 ◽  
Vol 29 (15) ◽  
pp. 2050247 ◽  
Author(s):  
Hasan Sozen ◽  
Ugur Cam

Meminductor is a nonlinear two-terminal element with storage energy and memory ability. To date, meminductor element is not available commercially as memristor and memcapacitor are. Therefore, it is of great significance to implement a meminductor emulator for breadboard experiment. In this paper, a flux-controlled floating/grounded meminductor emulator without a memristor is presented. It is built with commercially available off-the-shelf electronic devices. It consists of single operational transconductance amplifier (OTA), single multiplier, two second-generation current conveyors (CCIIs), single current-feedback operational amplifier (CFOA) and single operational amplifier. Using OTA device introduces an additional control parameter besides frequency and amplitude values of applied voltage to control the area of pinched hysteresis loop of meminductor. Mathematical model of proposed emulator circuit is given to describe the behavior of meminductor circuit. The breadboard experiment is performed using CA3080, AD844, AD633J and LM741 for OTA, CCII–CFOA, multiplier and operational amplifier, respectively. Simulation and experimental test results are given to verify the theoretical analyses. Frequency-dependent pinched hysteresis loop is maintained up to 5 kHz. The presented meminductor emulator tends to work as ordinary inductor for higher frequencies.


Author(s):  
Jianxiu Hao ◽  
Xiangliang Jin ◽  
Bo Peng

A novel bipolar photon-controlled generalized memristor model with an avalanche photodiode (APD) passive quenching circuit is presented in this paper. The SPICE model of the circuit is established and its fingerprints are analyzed by the pinched hysteresis loops with different bipolar periodic stimuli. The dynamical characteristics of the proposed circuit model are investigated both theoretically and simulatively. The results verified by Cadence Spectre circuit simulator demonstrate that the proposed circuit model is a simple bipolar photon-controlled generalized memristor. Compared with the previously published memristor models, the biggest innovation of this paper is to propose a bipolar generalized memristor model instead of the traditional model, which can easily form the pinched hysteresis loop. Another highlight is that the generalized memristor model in this paper is controlled by photons while conventional memristors are charge-controlled/flux-controlled. Furthermore, the circuit level models are more stable, more reliable and more resistant to interference than the device level models. The topological structure of the proposed circuit model in this paper is much more simpler.


2012 ◽  
Vol 59 (9) ◽  
pp. 607-611 ◽  
Author(s):  
Zdeněk Biolek ◽  
Dalibor Biolek ◽  
Viera Biolkova

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