scholarly journals Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory

2018 ◽  
Vol 2018 ◽  
pp. 1-8 ◽  
Author(s):  
Stanislav Tikhov ◽  
Oleg Gorshkov ◽  
Ivan Antonov ◽  
Alexander Morozov ◽  
Maria Koryazhkina ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Oxygen Vacancies ◽  
Random Access ◽  
Metal Oxide Semiconductor ◽  
Yttria Stabilized Zirconia ◽  
Ion Concentration ◽  
Oxide Semiconductor ◽  
Stabilized Zirconia ◽  
Ion Migration ◽  
Migration Polarization

We report the investigations of the ion migration polarization in the yttria stabilized zirconia (YSZ) thin films in the Metal-Oxide-Metal (MOM) and Metal-Oxide-Semiconductor (MOS) stacks due to the drift of the oxygen vacancies under the external bias voltage applied between the electrodes. The parameters characterizing the drift of the oxygen vacancies in YSZ such as the ion drift activation energy, mobile ion concentration, and the drift mobility have been determined in the temperature range 300–500 K. These data are important for deeper understanding of the fundamental mechanisms of the electroforming and resistive switching in the YSZ-based MOM and MOS stacks, which are promising for the Resistive Random Access Memory (RRAM) and other memristor device applications.

scholarly journals Memristor based Non-Volatile Random Access Memory Cell by 45nm CMOS Techology

2020 ◽  
Vol 9 (1) ◽  
pp. 1432-1435
Keyword(s):  
Metal Oxide ◽  
Large Scale ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Vlsi Circuit ◽  
Access Memory ◽  
Circuit Element

Rapid memories receives time to live attentive of substantial concluding mission available overstretched. Objectives of principle memory innovation is to create a excessive piece thickness part. Presents new problems in extremely large scale integrated (VLSI) circuit plan. Worldwide inconstancy to accomplish excessive return SRAM objects. Semiconductor reminiscence gadgets are commonly classified as risky or non-unpredictable arbitrary get right of entry to reminiscences. SRAM is delegated an unpredictable reminiscence because it is predicated on the usage of steady capability to hold up the placed away information. In the event that the pressure is interfered with, the reminiscence substance are decimated besides if a again-up battery stockpiling framework is saved up. In this mission a non-unpredictable SRAM cellular is planned utilising a blend of memristor and metal-oxide semiconductor devices. The records is placed away inside the reminiscence in any occasion, while the pressure is killed for an inconclusive time. The precept highlight of the proposed circuit element is its non-instability

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