scholarly journals Development and Commissioning of High Temperature FBG Solid Pressure Sensors

2018 ◽  
Vol 2018 ◽  
pp. 1-8 ◽  
Author(s):  
Hong-Ying Guo ◽  
Zhao-Ba Wang ◽  
Hai-yang Li

In this work, a new type of high temperature fiber grating diaphragm pressure sensor is described, including the physical design structure, in-depth analysis of optical response to changes in pressure, and a discussion of the temperature compensation method. Mathematical model of high-temperature compressive shape change and normal-temperature compressive shape change is built, and effective temperature compensation method is proposed, which can both contribute to solve temperature interference of pressure sensor at high temperature. In addition, the simulation computation is conducted for the external encapsulation of the sensor under the high-temperature and pressure according to the design model. Through analysis and comparison of data affecting the changing position of grating signal, the correctness of the simulation result is verified by the development of the prototype. The temperature compensation method is proposed to realize pressure measurement of sensor with a relative error below 4.6%F.S. and range to 50 MPa in the environment of 300, which meets with the safety research requirement of the cartridge system.

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 216
Author(s):  
Yongwei Li ◽  
Ting Liang ◽  
Cheng Lei ◽  
Qiang Li ◽  
Zhiqiang Li ◽  
...  

In this study, a preparation method for the high-temperature pressure sensor based on the piezoresistive effect of p-type SiC is presented. The varistor with a positive trapezoidal shape was designed and etched innovatively to improve the contact stability between the metal and SiC varistor. Additionally, the excellent ohmic contact was formed by annealing at 950 °C between Ni/Al/Ni/Au and p-type SiC with a doping concentration of 1018cm−3. The aging sensor was tested for varistors in the air of 25 °C–600 °C. The resistance value of the varistors initially decreased and then increased with the increase of temperature and reached the minimum at ~450 °C. It could be calculated that the varistors at ~100 °C exhibited the maximum temperature coefficient of resistance (TCR) of ~−0.35%/°C. The above results indicated that the sensor had a stable electrical connection in the air environment of ≤600 °C. Finally, the encapsulated sensor was subjected to pressure/depressure tests at room temperature. The test results revealed that the sensor output sensitivity was approximately 1.09 mV/V/bar, which is better than other SiC pressure sensors. This study has a great significance for the test of mechanical parameters under the extreme environment of 600 °C.


Sensors ◽  
2018 ◽  
Vol 18 (8) ◽  
pp. 2676
Author(s):  
Chen Li ◽  
Boshan Sun ◽  
Yanan Xue ◽  
Jijun Xiong

Alumina ceramic is a highly promising material for fabricating high-temperature pressure sensors. In this paper, a direct bonding method for fabricating a sensitive cavity with alumina ceramic is presented. Alumina ceramic substrates were bonded together to form a sensitive cavity for high-temperature pressure environments. The device can sense pressure parameters at high temperatures. To verify the sensitivity performance of the fabrication method in high-temperature environments, an inductor and capacitor were integrated on the ceramic substrate with the fabricated sensitive cavity to form a wireless passive LC pressure sensor with thick-film integrated technology. Finally, the fabricated sensor was tested using a system test platform. The experimental results show that the sensor can realize pressure measurements above 900 °C, confirming that the fabricated sensitive cavity has excellent sealing properties. Therefore, the direct bonding method can potentially be used for developing all-ceramic high-temperature pressure sensors for application in harsh environments.


Sensors ◽  
2016 ◽  
Vol 16 (10) ◽  
pp. 1707 ◽  
Author(s):  
Ji Li ◽  
Guoqing Hu ◽  
Yonghong Zhou ◽  
Chong Zou ◽  
Wei Peng ◽  
...  

2021 ◽  
Author(s):  
Meiling Jia ◽  
Chenghan Yi ◽  
Yankun Han ◽  
Xin Li ◽  
Guoliang Xu ◽  
...  

Abstract Thin, lightweight, and flexible textile pressure sensors with the ability to precisely detect the full range of faint pressure (< 100 Pa), low pressure (in the range of KPa) and high pressure (in the range of MPa) are in significant demand to meet the requirements for applications in daily activities and more meaningfully in some harsh environments, such as high temperature and high pressure. However, it is still a major challenge to fulfill these requirements simultaneously in a single pressure sensor. Herein, a high-performance pressure sensor enabled by polyimide fiber fabric with functionalized carbon-nanotube (PI/FCNT) is obtained via a facile electrophoretic deposition (EPD) approach. High-density FCNT is evenly wrapped and chemically bonded to the fiber surface during the EPD process, forming a conductive hierarchical fiber/FCNT matrix. Benefiting from the abundant yet firm contacting points, point-to-point contacting mode, and high elastic modulus of both PI and CNT, the proposed PI/FCNT pressure sensor exhibits ultra-high sensitivity (3.57 MPa− 1), ultra-wide linearity (3.24 MPa), exceptionally broad sensing range (~ 45 MPa), and long-term stability (> 4000 cycles). Furthermore, under a high working temperature of 200 ºC, the proposed sensor device still shows an ultra-high sensitivity of 2.64 MPa− 1 within a wide linear range of 7.2 MPa, attributing to its intrinsic high-temperature-resistant properties of PI and CNT. Thanks to these merits, the proposed PI/FCNT(EPD) pressure sensor could serve as an E-skin device to monitor the human physiological information, precisely detect tiny and extremely high pressure, and can be integrated into an intelligent mechanical hand to detect the contact force under high-temperature (> 300 ºC), endowing it with high applicability in the fields of real-time health monitoring, intelligent robots, and harsh environments.


2021 ◽  
Author(s):  
SUMIT KUMAR JINDAL ◽  
ISHAN PATEL ◽  
KRISH SETHI ◽  
SIMRIT KAUL ◽  
SREEKANTH P K ◽  
...  

Abstract Capacitive pressure sensors have become more popular as compared to piezoresistive pressure sensors as they yield superior sensitivity and lesser non-linearity. Efficient analysis for modelling capacitive pressure sensors is thus increasingly becoming more important due to their innumerable use cases. The higher sensitivity of square diaphragm for the same side length in comparison to circular diaphragm makes it ideal for sensor design. In this work, a complete formulation for analysis of capacitive pressure sensor with the square diaphragm in normal and touch mode operation has been presented as these two modes are established operating modes for these sensors. A comprehensive study of sensor parameters like capacitance, diaphragm deflection, capacitive and mechanical sensitivity has been formulated to aid the choice of sensor characteristics. This work also focuses on the method to determine core design parameters for optimal operation. Computationally complex methods have been used in the past for analysis of square diaphragms. In contrast to the finite element system, the analytical technique proposed in this study is less complex and computationally efficient (FEM). The results were computed and simulated using MATLAB.


Author(s):  
Junwang Tian ◽  
Zhong Jin ◽  
Xin Tang ◽  
Wenxian Peng ◽  
Junfu Liu ◽  
...  

Abstract Silicon piezoresistive pressure sensors can only operate below 125°C due to the leakage current of the PN junction. However, SOI high temperature pressure sensors use SiO2 for full dielectric isolation to solve this problem. At present, SOI high temperature pressure sensors mostly use lead bonding package structure, with gold wire to lead the electrical signal and silicone oil as the protection medium, but the working temperature of silicone oil is limited to about 150?. In this paper, the leadless package structure is designed by using pressure conduction on the back side of the chip and replacing the gold wire with conductive silver paste, and the materials and dimensions of the leadless package structure are determined. The reliability of the leadless package structure was verified by finite element analysis, and the results showed that the thermal stress caused by high and low temperature cycles in the leadless package is very small and does not affect the sensitivity of the pressure-sensitive chip. The size of the leadless package structure was optimized by Taguchi orthogonal method, and the maximum thermal stress was effectively reduced. Also, the key factors affecting the thermal stress of the leadless package in the package structure were identified by the variance number analysis method. The electrical signal conduction of the pressure sensor is achieved by a silver paste sintering process, and the data show that the sensitivity of the pressure sensor is 30.82 mV/MPa with a nonlinearity of less than 0.4% FS.


2013 ◽  
Vol 846-847 ◽  
pp. 513-516 ◽  
Author(s):  
Teng Li ◽  
Shi Liang Yang ◽  
Hong Liang Pan

Considering the effects of temperature on output of silicon pressure sensor, this paper proposed a novel method for analyzing temperature compensation of pressure sensor by using the combination of Principal Component Analysis (PCA) and improved BP neural networks. By using PCA to extract the prime information of temperature compensation, the multi-dimensional problem is simplified, the noise error data is eliminated, the neura1 network is improved and the fault-tolerance capability is enhanced. The results indicate that this method can restrain the effects of temperature on pressure sensors effectively and enhance their stability and accuracy.


Sensors ◽  
2021 ◽  
Vol 21 (2) ◽  
pp. 379
Author(s):  
Baohua Tian ◽  
Haiping Shang ◽  
Lihuan Zhao ◽  
Dahai Wang ◽  
Yang Liu ◽  
...  

The hermeticity performance of the cavity structure has an impact on the long-term stability of absolute pressure sensors for high temperature applications. In this paper, a bare silicon carbide (SiC) wafer was bonded to a patterned SiC substrate with shallow grooves based on a room temperature direct bonding process to achieve a sealed cavity structure. Then the hermeticity analysis on the SiC cavity structure was performed. The microstructure observation demonstrates that the SiC wafers are tightly bonded and the cavities remain intact. Moreover, the tensile testing indicates that the tensile strength of bonding interface is ~8.01 MPa. Moreover, the quantitative analysis on the airtightness of cavity structure through leakage detection shows a helium leak rate of ~1.3 × 10−10 Pa⋅m3/s, which satisfies the requirement of the specification in the MIL-STD-883H. The cavity structure can also avoid an undesirable deep etching process and the problem caused by the mismatch of thermal expansion coefficients, which can be potentially further developed into an all-SiC piezoresistive pressure sensor employable for high temperature applications.


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