scholarly journals Comparing Thermal Durability and Effects of Annealing Temperature on Characteristics of Hydrogen-Doped ZnO, AZO, and GZO Thin Films

2021 ◽  
Vol 2021 ◽  
pp. 1-9
Author(s):  
Dung Van Hoang ◽  
Anh Tuan Thanh Pham ◽  
Truong Huu Nguyen ◽  
Thang Bach Phan ◽  
Vinh Cao Tran

In this work, undoped, aluminum-, and gallium-doped ZnO thin films (ZnO-H, AZO-H, and GZO-H, respectively) deposited on soda-lime glass substrates by magnetron sputtering method in a gas mixture of hydrogen and argon are annealed at various temperatures in the range of 200–500°C in air to evaluate the durability of those films under annealing temperature. From photoluminescence spectra, formation of point defects, especially oxygen vacancies, when hydrogen diffuses out of the films at high annealing temperature is exhibited via a significant increase of visible emissions. We find out that carrier concentration and Hall mobility of AZO-H and ZnO-H films dramatically decrease, while those of GZO-H film are still stable as the annealing temperature increased from 200°C to 300°C. We proposed a model for interpreting the thermal durability of GZO-H film that, at an annealing temperature of 300°C, Ga3+ ions located at adjacent Zn sites can push hydrogen atoms, which are broken out of the antibonding sites which are perpendicular to the c -axis (AB┴), into bond center sites paralleled to the c -axis (BC//). The movement of hydrogen from AB┴ to BC// site also gives rise to the durability of electrical properties of GZO-H films at the high annealing temperature.

2013 ◽  
Vol 284-287 ◽  
pp. 108-112
Author(s):  
Pin Chuan Yao ◽  
Shih Tse Hang ◽  
Menq Jiun Wu

Transparent conducting Al-doped ZnO (AZO) thin films were deposited on soda-lime glass substrates by DC magnetron sputtering with a sintered ceramic target, AZOY® that contains a small amount of Y2O3 in addition to Al2O3 and ZnO. The effect of substrate temperatures (Ts) on the structural, electrical and optical properties of the prepared AZO films was evaluated extensively. By elevating Ts, the electrical conductivity of the films could be effectively improved from 1.68 ×10-3 cm (no substrates heating) to a minimum resistivity of 4.6210-4 cm at Ts = 400oC with an average visible transmittance (400~800nm) of ~80%. It revealed that substrate heating is closely related to the crystallinity and the surface roughness of the deposited films. It is noteworthy that the transmittance in the NIR region was also improved considerably as compared to those using alloy targets by reactive magnetron sputtering and even slightly higher than those using Al-doped ZnO (1 wt.%) ceramic targets by RF sputtering.


2015 ◽  
Vol 1109 ◽  
pp. 461-465 ◽  
Author(s):  
Nurbaya Zainal ◽  
Mohd Hafiz Wahid ◽  
Mohammad Rusop

Performance of lead titanate, (PbTiO3) thin films have been successfully investigated on microstructural properties, I-V characteristic, dielectric properties, and ferroelectric properties. PbTiO3offers variety of application as transducer, ferroelectric random access memory, transistor, high performance capacitor, sensor, and many more due to its ferroelectric behavior. Preparation of the films are often discussed in order to improve the structural properties, like existence of grain boundaries, particle uniformity, presents of microcrack films, porosities, and many more. Yet, researchers still prepare PbTiO3thin films at high crystallization temperature, certainly above than 600 ̊C to obtain single crystal perovskite structure that would be the reason to gain high spontaneous polarization behavior. Although this will results to high dielectric constant value, the chances that leads to high leakage current is a major failure in device performance. Thus, preparation the thin films at low annealing temperature quite an essential study which is more preferable deposited on low-cost soda lime glass. The study focuses on low annealing temperature of PbTiO3thin films through sol-gel spin coating method and undergo for dielectric and I-V measurements.


2013 ◽  
Vol 716 ◽  
pp. 325-327
Author(s):  
Xiao Yan Dai ◽  
Cheng Wu Shi ◽  
Yan Ru Zhang ◽  
Min Yao

In this paper, CdTe thin films were deposited on soda-lime glass substrates using CdTe powder as a source by close-spaced sublimation at higher source temperature of 700°C. The influence of the deposition time and the source-substrate distance on the chemical composition, crystal phase, surface morphology and optical band gap of CdTe thin films was systemically investigated by energy dispersive X-ray spectroscopy, X-ray diffraction, scanning electron microscope and the ultraviolet-visible-near infrared absorption spectra, respectively. At the deposition time of 60 min and the source-substrate distance of 5 mm, the CdTe thin films had pyramid appearance with the grain size of 15 μm.


2016 ◽  
Vol 2016 ◽  
pp. 1-10 ◽  
Author(s):  
Weimin Li ◽  
Xia Yan ◽  
Armin G. Aberle ◽  
Selvaraj Venkataraj

Molybdenum (Mo) thin films are widely used as rear electrodes in copper indium gallium diselenide (CIGS) solar cells. The challenge in Mo deposition by magnetron sputtering lies in simultaneously achieving good adhesion to the substrates while retaining the electrical and optical properties. Bilayer Mo films, comprising five different thickness ratios of a high pressure (HP) deposited bottom layer and a low pressure (LP) deposited top layer, were deposited on 40 cm × 30 cm soda-lime glass substrates by DC magnetron sputtering. We focus on understanding the effects of the individual layer properties on the resulting bilayer Mo films, such as microstructure, surface morphology, and surface oxidation. We show that the thickness of the bottom HP Mo layer plays a major role in determining the micromechanical and physical properties of the bilayer Mo stack. Our studies reveal that a thicker HP Mo bottom layer not only improves the adhesion of the bilayer Mo, but also helps to improve the film crystallinity along the preferred [110] direction. However, the surface roughness and the porosity of the bilayer Mo films are found to increase with increasing bottom layer thickness, which leads to lower optical reflectance and a higher probability for oxidation at the Mo surface.


2017 ◽  
Vol 2 (1) ◽  
pp. 54-59 ◽  
Author(s):  
Shih-Fan Chen ◽  
Shea-Jue Wang ◽  
Win-Der Lee ◽  
Ming-Hong Chen ◽  
Chao-Nan Wei ◽  
...  

The back contact electrode with molybdenum (Mo) thin film is crucial to the performance of Cu(In, Ga)Se2 solar cells. In this research, Mo thin films were fabricated by direct current sputtering to attain low-resistivity molybdenum films on soda-lime glass substrates with good adhesion. The films were sputtered onto substrates in 500 nm thickness and nominally held at room temperature with deposition conditions of power and working pressure. Low resistivity (17-25 μΩ∙cm) of bi-layer molybdenum thin films were achieved with combination of top layer films deposited at 300 W with different working pressure, and bottom fixing layer film deposited at 300 W with 2.5 mTorr which adhered well on glass. Films were characterized the electrical properties, structure, residual stress, morphology by using the Hall-effect Measurement, X-ray Diffraction, and Field-Emission Scanning Electron Microscopy, respectively, to optimize the deposition conditions.


1996 ◽  
Vol 436 ◽  
Author(s):  
C. R. Ottermann ◽  
K. Bange ◽  
A. Braband ◽  
H. Haefke ◽  
W. Gutmannsbauer

AbstractAdhesion failures of Ti2 and Ta2O5 thin films deposited by reactive evaporation (RE), reactive ion plating (IP) and plasma impulse chemical vapour deposition (PICVD) on fused silica, AF 45, TEMPAX and soda-lime glass substrates are investigated by means of a micro-scratch tester. The oxide films possess thickness between 60 and 500 nm and show different mass densities depending on the deposition conditions. Scratch testing exhibits well pronounced detachment for thicker films on hard substrates. The clearance of the scratch signal is reduced with decreasing layer thickness or for softer substrate materials. The test results are also influenced by the various substrates and different chemical and mechanical properties of the films due to the alternate deposition techniques.


2014 ◽  
Vol 1603 ◽  
Author(s):  
Yong Yan ◽  
Shasha Li ◽  
Zhou Yu ◽  
Yong Zhang ◽  
Yong Zhao

ABSTRACTCu2ZnSnSe4 films were deposited on soda lime glass substrates at room temperature by one-step radio frequency magnetron-sputtering process. The effect of sputtering power on the properties of one-step deposited Cu2ZnSnSe4 thin films has been investigated. The deposited films might be suitable for the absorber layers in the solar cells. The chemical composition and the preferred orientation of the films can be optimized by the sputtering power.


2001 ◽  
Vol 697 ◽  
Author(s):  
Hisayuki Suematsu ◽  
Tsuyoshi Saikusa ◽  
Tsuneo Suzuki ◽  
Weihua Jiang ◽  
Kiyoshi Yatsui

AbstractThin films of titanium iron (TiFe) were prepared by a pulsed ion-beam evaporation (IBE) method. A pulsed ion beam of proton accelerated at 1 MV (peak) with a pulse width of 50 ns and a current of 70 kA was focused on TiFe alloy targets. Soda lime glass substrates were placed in front of the targets. Phases in the thin films were identified by X-ray diffraction (XRD). XRD results revealed that the thin films deposited on the glass substrates consist of a TiFe phase. Crystallized Ti-Fe thin films without oxides were successfully obtained. Surface roughness of the thin film was 0.16 m m.


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