A Study on the Adhesion Properties of Reactive Sputtered Molybdenum Thin Films with Nitrogen Gas on Polyimide Substrate as a Cu Barrier Layer

2015 ◽  
Vol 15 (11) ◽  
pp. 8743-8748 ◽  
Author(s):  
Hong Sik Kim ◽  
Byoung O. Kim ◽  
Jong Hyun Seo
2017 ◽  
Vol 110 (9) ◽  
pp. 091904 ◽  
Author(s):  
D. Faurie ◽  
F. Zighem ◽  
A. Garcia-Sanchez ◽  
P. Lupo ◽  
A. O. Adeyeye

1998 ◽  
Vol 545 ◽  
Author(s):  
J. C. Caylor ◽  
A. M. Stacy ◽  
T. Sands ◽  
R. Gronsky

AbstractBulk skutterudite phases based on the CoAs3 structure have yielded compositions with a high thermoelectric figure-of-merit (“ZT”) through the use of doping and substitutional alloying. It is postulated that further enhancements in ZT may be attained in artificially structured skutterudites by engineering the microstructure to enhance carrier mobility while suppressing the phonon component of the thermal conductivity. In this work the growth and properties of singlephase CoSb3 and IrSb3 skutterudite thin films are reported. The films are synthesized by pulsed laser deposition (PLD) where the crystallinity can be controlled by the deposition temperature. Powder X-ray diffraction (PXRD), Transmission electron microscopy (TEM) and Rutherford- Back Scattering (RBS) were used to probe phase, structure, morphology and stoichiometry of the films as functions of growth parameters and substrate type. A substrate temperature of 250°C was found to be optimal for the deposition of the skutterudites from stoichiometric targets. Above this temperature the film is depleted of antimony due to its high vapor pressure eventually reaching a composition where the skutterudite structure is no longer stable. However, when films are grown from antimony-rich targets the substrate temperature can be increased to at least 350°C while maintaining the skutterudite phase. In addition, adhesion properties of the films are explored in terms of the growth mode and substrate interaction. Finally, preliminary room temperature electrical and thermal measurements are reported.


1994 ◽  
Vol 76 (8) ◽  
pp. 4516-4523 ◽  
Author(s):  
E. M. Zielinski ◽  
R. P. Vinci ◽  
J. C. Bravman

1994 ◽  
Vol 343 ◽  
Author(s):  
K. Yoshikawa ◽  
T. Kimura ◽  
H. Noshiro ◽  
S. Ohtani ◽  
M. Yamada ◽  
...  

ABSTRACTRuthenium dioxide (RuO2) thin films are evaluated as bottom electrode for dielectric SrTiO3. It was found that a RuO2 (50nm) / Ru (20nm) barrier layer on a Si substrate is effective as an oxygen barrier layer and as a metal diffusion barrier layer for sputter deposited SrTiO3 films at substrate temperature of 450°C. To test suitability for high temperature processes, RuO2/Ru electrodes were annealed in air at 600°C. 100nm-thiick RuO2 was sufficient to prevent oxygen diffusion. After annealing in the same condition, the leakage current of sputter deposited SrTiO3 (150nm) on RuO2(50nm) / Ru(50nm) was 7.6 × 10 −9 (A/cm2) at 2V.


2013 ◽  
Vol 802 ◽  
pp. 47-52
Author(s):  
Chuleerat Ibuki ◽  
Rachasak Sakdanuphab

In this work the effects of amorphous (glass) and crystalline (Si) substrates on the structural, morphological and adhesion properties of CoFeB thin film deposited by DC Magnetron sputtering were investigated. It was found that the structure of a substrate affects to crystal formation, surface morphology and adhesion of CoFeB thin films. The X-Ray diffraction patterns reveal that as-deposited CoFeB thin film at low sputtering power was amorphous and would become crystal when the power increased. The increase in crystalline structure of CoFeB thin film is attributed to the crystalline substrate and the increase of kinetic energy of sputtering atoms. Atomic Force Microscopy images of CoFeB thin film clearly show that the roughness, grain size, and uniformity correlate to the sputtering power and the structure of substrate. The CoFeB thin film on glass substrate shows a smooth surface and a small grain size whereas the CoFeB thin film on Si substrate shows a rough surface and a slightly increases of grain size. Sticky Tape Test on CoFeB thin film deposited on glass substrate indicates the adhesion failure with a high sputtering power. The results suggest that the crystalline structure of substrate affects to the atomic bonding and the sputtering power affects to intrinsic stress of CoFeB thin film.


2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Maysam Rezaee ◽  
Li-Chih Tsai ◽  
Muhammad Istiaque Haider ◽  
Armin Yazdi ◽  
Ehsan Sanatizadeh ◽  
...  

AbstractThe adhesion strength of thin films is critical to the durability of micro and nanofabricated devices. However, current testing methods are imprecise and do not produce quantitative results necessary for design specifications. The most common testing methods involve the manual application and removal of unspecified tape. This overcome many of the challenges of connecting to thin films to test their adhesion properties but different tapes, variation in manual application, and poorly controlled removal of tape can result in wide variation in resultant forces. Furthermore, the most common tests result in a qualitative ranking of film survival, not a measurement with scientific units. This paper presents a study into application and peeling parameters that can cause variation in the peeling force generated by tapes. The results of this study were then used to design a test methodology that would control the key parameters and produced repeatable quantitative measurements. Testing using the resulting method showed significant improvement over more standard methods, producing measured results with reduced variation. The new method was tested on peeling a layer of paint from a PTFE backing and was found to be sensitive enough to register variation in force due to differing peeling mechanisms within a single test.


Author(s):  
Sudheer Neralla ◽  
Sergey Yarmolenko ◽  
Dhananjay Kumar ◽  
Devdas Pai ◽  
Jag Sankar

Alumina is a widely used ceramic material due to its high hardness, wear resistance and dielectric properties. The study of phase transformation and its correlation to the mechanical properties of alumina is essential. In this study, interfacial adhesion properties of alumina thin films are studied using cross-sectional nanoindentation (CSN) technique. Alumina thin films are deposited at 200 and 700 °C, on Si (100) substrates with a weak Silica interface, using pulsed laser deposition (PLD) process. Effect of annealing on the surface morphology of the thin films is studied using atomic force microscopy. Xray diffraction studies revealed that alumina thin films are amorphous in nature at 200 °C and polycrystalline with predominant gamma alumina phase at 700 °C.


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