Improvement of On/Off Current Ratio of Amorphous In–Ga–Zn–O Thin-Film Transistor with Off-Planed Source/Drain Electrodes

2019 ◽  
Vol 19 (3) ◽  
pp. 1345-1349 ◽  
Author(s):  
Min-Soo Kang ◽  
Won-Ju Cho
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Current Ratio

scholarly journals Demonstration on Ferroelectric-gate Thin Film Transistor NAND-type Array with Disturbance-free Operation

2019 ◽  
Vol 35 (2) ◽  
Author(s):  
Bui Nguyen Quoc Trinh
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Gate Insulator ◽  
Current Ratio ◽  
Memory State ◽  
Small Loss ◽  
Memory Circuit ◽  
Novel Concept ◽  
Data Reading

Abstract: A novel concept of NAND memory array has been proposed by using only ferroelectric-gate thin film transistors (FGTs), whose structure is constructed from a sol-gel ITO channel and a sol-gel stacked ferroelectric between Bi3.25La0.75Ti3O12 and PbZr0.52TiO0.48O3 (BLT/PZT) gate insulator. Interestingly, ferroelectric cells with a wide memory window of 3 V and a large on/off current ratio of 6 orders, have been successfully integrated in a NAND memory circuit. To protect data writing or reading from disturbance, ferroelectric transistor cells are directly used, instead of paraelectric transistor cells as usual. As a result, we have verified disturbance-free operation for data reading and writing, with a small loss of the memory state and a low power consumption, in principle. Keywords: ITO, PZT, NAND, FeRAM, ferroelectric.

scholarly journals Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications

Materials ◽  
2019 ◽  
Vol 12 (1) ◽  
pp. 137 ◽  
Author(s):  
Seung-Hun Lee ◽  
Kihwan Kwon ◽  
Kwanoh Kim ◽  
Jae Sung Yoon ◽  
Doo-Sun Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Electronic Devices ◽  
Optical Transmittance ◽  
Plastic Substrate ◽  
Current Ratio ◽  
Vacancy Defects ◽  
Potential Applications

The properties of Al-doped SnOx films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnOx thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec−1, increased on/off current ratio of ~8 × 107, threshold voltage (Vth) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnOx films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.

scholarly journals Pentacene-Based Thin Film Transistor with Inkjet-Printed Nanocomposite High-K Dielectrics

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Chao-Te Liu ◽  
Wen-Hsi Lee ◽  
Jui-Feng Su
Keyword(s):  
Thin Film ◽  
Inkjet Printing ◽  
Gate Dielectric ◽  
Dielectric Film ◽  
Thin Film Transistor ◽  
Current Ratio ◽  
Large Current ◽  
High K ◽  
Dose Concentration ◽  
Top Contact

The nanocomposite gate insulating film of a pentacene-based thin film transistor was deposited by inkjet printing. In this study, utilizing the pearl miller to crumble the agglomerations and the dispersant to well stabilize the dispersion of nano-TiO2particles in the polymer matrix of the ink increases the dose concentration for pico-jetting, which could be as the gate dielectric film made by inkjet printing without the photography process. Finally, we realized top contact pentacene-TFTs and successfully accomplished the purpose of directly patternability and increase the performance of the device based on the nanocomposite by inkjet printing. These devices exhibited p-channel TFT characteristics with a high field-effect mobility (a saturation mobility of ̃0.58 cm2 V−1 s−1), a large current ratio (>103) and a low operation voltage (<6 V). Furthermore, we accorded the deposited mechanisms which caused the interface difference between of inkjet printing and spin coating. And we used XRD, SEM, Raman spectroscopy to help us analyze the transfer characteristics of pentacene films and the performance of OTFTs.

scholarly journals P3HT Nanofibrils Thin-Film Transistors by Adsorbing Deposition in Suspension

Materials ◽  
2019 ◽  
Vol 12 (21) ◽  
pp. 3643 ◽  
Author(s):  
Shuichi Nagamatsu ◽  
Masataka Ishida ◽  
Shougo Miyajima ◽  
Shyam S. Pandey
Keyword(s):  
Thin Film ◽  
Conjugated Polymer ◽  
Thin Film Transistors ◽  
Preparation Method ◽  
Substrate Surface ◽  
Thin Film Transistor ◽  
Current Ratio ◽  
P3ht Film ◽  
Polymer Thin Film ◽  
Film Preparation

A novel film preparation method utilizing polymer suspension, entitled adsorbing deposition in suspensions (ADS), has been proposed. The poly(3-hexylthiophene) (P3HT) toluene solution forms P3HT nanofibrils dispersed suspension by aging. P3HT nanofibrils are highly crystallized with sharp vibronic absorption spectra. By the ADS method, only P3HT nanofibrils in suspension can be deposited on the substrate surface without any disordered fraction from the dissolved P3HT in suspension. Formed ADS film contains only the nanostructured conjugated polymer. Fabricated polymer thin-film transistor (TFT) utilizing ADS P3HT film shows good TFT performances with low off current, narrow subthreshold swing and large on/off current ratio.

Effect Of O2 Plasma Exposure On The Performance Of Polycrystalline Silicon Thin Film Transistors

1994 ◽  
Vol 345 ◽  
Author(s):  
Chul Ha Kim ◽  
Il Lee ◽  
Ki Soo Sohn ◽  
Su Chul Chun ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Plasma Exposure ◽  
Silicon Thin Film ◽  
Current Ratio ◽  
Si Thin Film ◽  
O2 Plasma

AbstractWe have studied the effect of O2 plasma exposure on the performance of polycrystalline silicon (poly-Si) thin film transistor (TFTs). The field effect mobility is increased and the drain currents at negative gate voltages are reduced by O2 plasma exposure on the surface of the TFT. These improvements in the performance of the poly-Si TFTs are larger in offset structure compared to overlap one. We obtained the on/off current ratio of ∼ 108 after O2 plasma exposure for the poly-Si TFTs with 3 or 4 μm offset length.

The p-channel a-Si:H Thin Film Transistor with Plasma Etched Copper Electrodes

2004 ◽  
Vol 808 ◽  
Author(s):  
Helinda Nominanda ◽  
Guojun Liu ◽  
Hyun Ho Lee ◽  
Yue Kuo
Keyword(s):  
Thin Film ◽  
Plasma Etching ◽  
Threshold Voltage ◽  
Ohmic Contacts ◽  
Thin Film Transistor ◽  
Channel Length ◽  
Current Ratio ◽  
Copper Electrodes ◽  
Annealing Step ◽  
Sinx Layer

ABSTRACTP-channel thin film transistors (TFTs) with a copper (Cu) gate, source, and drain electrodes, prepared by a novel plasma etching process, have been fabricated and studied. The p-channel TFT characteristics are similar to those of the p-channel TFT with Mo electrodes. The influence of the channel length on the TFT characteristics, such as mobility, threshold voltage, and on-off current ratio, was examined. In spite of its low mobility, good device characteristics, such as ohmic contacts, were obtained. Most of the TFT characteristics, except the threshold voltage, were not affected by an extended high-temperature annealing step. The increase of the threshold voltage was probably due to the lack of a diffusion barrier between the gate Cu and the gate SiNx layer.

Photoresponses of Zinc Tin Oxide Thin-Film Transistor

2020 ◽  
Vol 20 (3) ◽  
pp. 1704-1708
Author(s):  
Wei Lun Huang ◽  
Chen-Chuan Yang ◽  
Sheng-Po Chang ◽  
Shoou-Jinn Chang
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistor ◽  
Drain Current ◽  
Oxide Thin Film ◽  
Current Ratio ◽  
Uv Photodetector ◽  
Saturation Region ◽  
Zinc Tin Oxide ◽  
Sputtering System

In this study, the optical and electrical properties of a zinc tin oxide (ZTO) thin-film transistor (TFT) were investigated. The TFT was fabricated using ZTO as the active layer, which was deposited by a radio frequency magnetron sputtering system, to form an ultraviolet (UV) photodetector. The device has a threshold voltage of 0.48 V, field-effect mobility of 1.47 cm2/Vs in the saturation region, on/off drain current ratio of 2×106, and subthreshold swing of 0.45 V/decade in a dark environment. Moreover, as a UV photodetector, the device has a long photoresponse time, responsivity of 0.329 A/W, and rejection ratio of 3.19×104 at a gate voltage of -15 V under illumination of wavelength 300 nm.

ITO-Channel Ferroelectric-Gate Thin Film Transistor with Large On/off Current Ratio

2007 ◽  
Vol 997 ◽  
Author(s):  
Eisuke Tokumitsu ◽  
Masaru Senoo ◽  
Etsu Shin ◽  
Tomofumi Fujimura
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Mechanical Polishing ◽  
Gate Insulator ◽  
Polishing Process ◽  
Current Ratio ◽  
Subthreshold Voltage ◽  
Voltage Swing

AbstractIndium tin oxide (ITO)-channel ferroelectric-gate thin film transistor (TFT) with large on/off current ratio is demonstrated by using mechanical polishing process to planarize the surface of ferroelectric bottom gate insulator (Bi,La)4Ti3O12 (BLT). It is shown that the mechanical polishing of the sol-gel derived polycrystalline ferroelectric BLT films causes no degradation in electrical properties. ITO channel layer was then deposited on the planarized BLT gate insulator to fabricate ferroelectric-gate TFTs. The off-current of the ITO/BLT TFT fabricated with the polishing process is drastically reduced to around 10−12 A, which is four orders of magnitude lower than that of the TFT fabricated without the polishing process. The obtained on/off current ratio is more than 107. In addition, a subthreshold voltage swing as small as 200 mV/decade was obtained.

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