Characteristics of Ultraviolet Sensor Based on PEDOT:PSS/Al Doped ZnO Film

2021 ◽  
Vol 21 (3) ◽  
pp. 1795-1798
Author(s):  
Seong Gwan Shin ◽  
Hyung Wook Choi

Ultraviolet (UV) sensors have application in many different areas such as flame and hightemperature detection, space research, environmental monitoring, ozone layer monitoring, and missile warning systems. Among them, ZnO thin-film-based UV sensors have been attracting attention among research groups and are being continuously studied. The incorporation of ZnO/organic hybrid structures into solar cells and other photoelectrochemical applications has been extensively reported. However, little research has been performed on ZnO/polymer-based UV sensors. In this study, a simple UV sensor based on an Al:ZnO/polymer is demonstrated. Al-doped ZnO enables effective UV detection with excellent performance at low operating voltages using a simple and inexpensive process.

2014 ◽  
Vol 556-562 ◽  
pp. 429-432
Author(s):  
Ping Cao ◽  
Yue Bai ◽  
Zhi Qu

Successful synthesis of room-temperature ferromagnetic semiconductors, (Cu, Co) co-doped ZnO film is obtained by sol-gel method. It is found that the essential ingredient in achieving room-temperature ferromagnetism is Cu co-doping. By Hall-effect measurement ap-type conductivity was observed for the Cu co-doped films, which induced the room-temperature ferromagnetism.


2011 ◽  
Vol 694 ◽  
pp. 928-930
Author(s):  
Zhi Huan Lan ◽  
Xiu Juan Miao

We have calculated the energy band structure of spin-polarized electronic in Zn15Y1O16 and Zn14Y1O16 and the formation energy of Zn10Y4O16 in the ferromagnetical and antiferromagnetical state by the linear augmented plane wave based on the local density approximation. The results show that the Y doped ZnO film may be ferromagnetic and Zn vacancy (VZn) is the origin of ZnO thin film with Y doping.


2013 ◽  
Vol 667 ◽  
pp. 569-572
Author(s):  
S.Z. Muhamed ◽  
Mohamad Hafiz Mamat ◽  
N.D. Md Sin ◽  
Mohamad Rusop

Nanostructured Aluminum (Al) doped Zinc Oxide (ZnO) thin films based ultra-violet (UV) sensors were prepared on glass substrates using immersion technique at different immersion times. Surface morphology results as characterized by scanning electron microscope (SEM) show that all prepared nanostructured Al doped ZnO were in form of nanorod structures with the typical diameter in the range of 60-250nm and the length within several micrometers. Photocurrent measurement results of the fabricated UV photoconductive sensor from nanostructured Al doped ZnO thin film immersed at 1 hr gives the highest photocurrent intensity compared with other samples.


2015 ◽  
Vol 18 (3) ◽  
pp. 78-84
Author(s):  
Tuan Anh Dao ◽  
Quang Nhat Nguyen ◽  
Loan Nguyen Phuong Vuong ◽  
Hung Vu Tuan Le

Sb-doped ZnO thin films with different values of Sb concentrations are deposited on glass substrate by using spin-coating technique. The influences of Sb doping content on the microstructural, photoluminescence and Raman properties of ZnO film are systematically investigated by X-ray diffraction (XRD), transmission spectrum, photoluminescence (PL) spectrum and Raman scattering spectrum. The results indicate that ZnO thin film doped with Sb exhibits a hexagonal wurtzite structure with preferred c-axis orientation. The strong violet emission peak located at 3.11 eV is observed in the Sb-doped ZnO thin film by photoluminescence. Conbining the Raman scattering spectrum with photoluminescence, it is concluded that the strong violet emission peak related to SbZn-O complex defect in ZnO:Sb film.


2020 ◽  
Vol 31 (9) ◽  
pp. 6948-6955
Author(s):  
Mustafa Özgür ◽  
Suat Pat ◽  
Reza Mohammadigharehbagh ◽  
Uğur Demirkol ◽  
Nihan Akkurt ◽  
...  

2020 ◽  
Vol 217 (24) ◽  
pp. 2000537
Author(s):  
Shailendra Kr. Singh ◽  
Uttam Kr. Samanta ◽  
Anirban Dhar ◽  
Mrinmay Pal ◽  
Mukul Chandra Paul

2006 ◽  
Vol 320 ◽  
pp. 113-116
Author(s):  
Shigeru Tanaka ◽  
Yukari Ishikawa ◽  
Naoki Ohashi ◽  
Junichi Niitsuma ◽  
Takashi Sekiguchi ◽  
...  

We have obtained Er-doped ZnO thin film in a micropattern of reverse trapezoids processed on Si substrate by sputtering and ultrafine polishing techniques. Near-infrared light emission was detected successfully from the thin film filling a single micropit with 10 μm square. Transmission electron microscopy (TEM) observation showed epitaxial growth of ZnO crystals along the curvature of the micropit.


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