scholarly journals Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes Characteristics

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Xingliang Xu ◽  
Lin Zhang ◽  
Peng Dong ◽  
Zhiqiang Li ◽  
Lianghui Li ◽  
...  
Keyword(s):  
Uv Irradiation ◽  
Deep Level ◽  
Dominant Role ◽  
Depletion Region ◽  
Pin Diodes ◽  
Blocking Voltage ◽  
Ultraviolet Light Irradiation ◽  
Before And After ◽  
Negative Charge Density ◽  
Transient Spectroscopy

AbstractIn this paper, the effect of ultraviolet (UV) irradiation on the static characteristics of high voltage 4H-SiC PiN is investigated. No significant change is observed in the forward on state characteristic of 4H-SiC PiN diodes before and after ultraviolet light irradiation. However, it is found that the blocking voltage is significantly increased with UV irradiation, which is resulted from the depletion region width extension with the collection of positive charges under the increase of the surface negative charge density. The deep level transient spectroscopy reveals that the UV irradiation induced deep-level defects play a dominant role over the trapped negative charges, and therefore leads to the increase of blocking voltage of 4H-SiC PiN Diodes.

scholarly journals Влияние нейтронного облучения на спектр дефектов с глубокими уровнями в GaAs, изготовленном методом жидкофазной эпитаксии в атмосфере водорода и аргона

2022 ◽  
Vol 56 (1) ◽  
pp. 53
Author(s):  
М.М. Соболев ◽  
Ф.Ю. Солдатенков
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Experimental Studies ◽  
Shallow Donor ◽  
Defect Clusters ◽  
Deep Traps ◽  
Capacitance Voltage ◽  
Before And After ◽  
Transient Spectroscopy ◽  
Different Doses

The results of experimental studies of capacitance– voltage characteristics, spectra of deep-level transient spectroscopy of graded high-voltage GaAs p+−p0−i−n0 diodes fabricated by liquid-phase epitaxy at a crystallization temperature of 900C from one solution–melt due to autodoping with background impurities, in a hydrogen or argon ambient, before and after irradiation with neutrons. After neutron irradiation, deep-level transient spectroscopy spectra revealed wide zones of defect clusters with acceptor-like negatively charged traps in the n0-layer, which arise as a result of electron emission from states located above the middle of the band gap. It was found that the differences in capacitance–voltage characteristics of the structures grown in hydrogen or argon ambient after irradiation are due to different doses of irradiation of GaAs p+−p0−i−n0 structures and different degrees of compensation of shallow donor impurities by deep traps in the layers.

Improved SiO2/ 4H-SiC Interface Defect Density Using Forming Gas Annealing

2019 ◽  
Vol 963 ◽  
pp. 465-468
Author(s):  
Stephan Wirths ◽  
Giovanni Alfieri ◽  
Alyssa Prasmusinto ◽  
Andrei Mihaila ◽  
Lukas Kranz ◽  
...  
Keyword(s):  
Defect Density ◽  
Deep Level ◽  
Flat Band ◽  
Temperature Dependent ◽  
Mos Capacitors ◽  
Interface Defect ◽  
Before And After ◽  
Oxide Deposition ◽  
Transient Spectroscopy ◽  
Post Deposition

We investigated the influence of forming gas annealing (FGA) before and after oxide deposition on the SiO2/4H-SiC interface defect density (Dit). For MOS capacitors (MOSCAPs) that were processed using FGAs at temperatures above 1050°C, CV characterization revealed decreased flat band voltage shifts and stretch-out for different sweep directions and frequencies. Moreover, constant-capacitance deep level transient spectroscopy (CC-DLTS) was performed and showed Dit levels below 1012 cm-2eV-1 for post deposition FGA at 1200°C. Finally, lateral MOSFETs were fabricated to analyze the temperature-dependent threshold voltage (Vth) shift.

Hydrogen-Vacancy Complexes and their Deep States in n-Type Silicon

2015 ◽  
Vol 242 ◽  
pp. 163-168 ◽  
Author(s):  
Ilia L. Kolevatov ◽  
Frank Herklotz ◽  
Viktor Bobal ◽  
Bengt Gunnar Svensson ◽  
Edouard V. Monakhov
Keyword(s):  
Schottky Diode ◽  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Energy Levels ◽  
Depletion Region ◽  
Type Silicon ◽  
Oxygen Center ◽  
Hydrogen Vacancy ◽  
Transient Spectroscopy

The evolution of irradiation-induced and hydrogen-related defects in n-type silicon in the temperature range 0 – 300 °C has been studied by deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). Implantation of a box-like profile of hydrogen was performed into the depletion region of a Schottky diode to undertake the DLTS and MCTS measurements. Proportionality between the formation of two hydrogen-related deep states and a decrease of the vacancy-oxygen center concentration was found together with the appearance of new hydrogen-related energy levels.

“Recovery” Effect of Electron Induced Damage in 4H-SiC Schottky Diodes

2003 ◽  
Vol 792 ◽  
Author(s):  
A. Castaldini ◽  
A. Cavallini ◽  
L. Rigutti ◽  
F. Nava ◽  
P.G. Fuochi ◽  
...  
Keyword(s):  
Deep Level ◽  
Collection Efficiency ◽  
Schottky Diodes ◽  
Chemical Vapour ◽  
Liquid Nitrogen Temperature ◽  
Charge Collection Efficiency ◽  
Before And After ◽  
Transient Spectroscopy ◽  
Lower Temperature ◽  
Different Doses

ABSTRACTThe effects of electron irradiation on the defects associated electronic levels in Schottky diodes on 4H silicon carbide epilayers grown by chemical vapour deposition were investigated by Deep Level Transient Spectroscopy (DLTS) and Capacitance-Voltage (C-V) characteristics. These investigations were performed before and after irradiation with 8.6 MeV electrons at different doses. After irradiation four new traps with enthalpies equal to (Ec-0.23 eV), (Ec-0.39 eV), (Ec-0.63 eV) and (Ec-0.75 eV) were detected. Their thermal stability, a key point to determine their structure on the basis of recent theoretical and experimental results, was carefully investigated since it was earlier observed that during DLTS temperature runs up to 500 K a slight but significant recovery of a few irradiation-induced levels occurs. This effect was previously observed in literature for the level (Ec-0.70 eV) after thermal treatment at 500 °C [1], but the present results indicate that it involves more than a single level and is also effective at lower temperature. DLTS analyses were also performed from room temperature to liquid nitrogen temperature and vice versa up to 500 K.The annealing kinetics is reported and a few conclusions on the structure of the defects involved in the recovery are drawn. The correlation with the diode charge collection efficiency is also reported.

Hydrogen-Induced Dissociation of the Fe-B Pair in Boron-Doped P-Type Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 183-187
Author(s):  
Chi Kwong Tang ◽  
Lasse Vines ◽  
Bengt Gunnar Svensson ◽  
Eduard Monakhov
Keyword(s):  
Deep Level ◽  
Schottky Diodes ◽  
Depletion Region ◽  
Charge Carrier Concentration ◽  
Defect Level ◽  
Boron Doped ◽  
Capacitance Voltage ◽  
Wet Chemical ◽  
Transient Spectroscopy ◽  
P Type

The interaction between hydrogen and the iron-boron pair (Fe-B) has been investigated in iron-contaminated boron-doped Cz-Si using capacitance-voltage measurements (CV) and deep level transient spectroscopy (DLTS). Introduction of hydrogen was performed by wet chemical etching and subsequent reverve bias annealing of Al Schottky diodes. The treatment led to the appearance of the defect level characteristic to interstitial iron (Fei) with a corresponding decrease in the concentration of the Fe-B pair. Concentration versus depth profiles of the defects show that dissociation of Fe-B occurs in the depletion region and capacitance-voltage measurements unveil a decrease in the charge carrier concentration due to passivation of B. These quantitative observations imply strongly that H promotes dissociation of Fe-B releasing Fei whereas no detectable passivation of Fe-B or Fei by H occurs.

Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation

2013 ◽  
Vol 740-742 ◽  
pp. 373-376 ◽  
Author(s):  
Kazuki Yoshihara ◽  
Masashi Kato ◽  
Masaya Ichimura ◽  
Tomoaki Hatayama ◽  
Takeshi Ohshima
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Low Energy ◽  
Epitaxial Layers ◽  
Before And After ◽  
Low Energy Electron ◽  
Transient Spectroscopy ◽  
P Type

We have characterized deep levels in as-grown and electron irradiated p-type 4H-SiC epitaxial layers by the current deep-level transient spectroscopy (I-DLTS) method. A part of the samples were irradiated with electrons in order to introduce defects. As a result, we found that electron irradiation to p-type 4H-SiC created complex defects including carbon vacancy or interstitial. Moreover, we found that observed deep levels are different between before and after annealing, and thus annealing may change structures of defects.

Deep Level Transient Spectroscopy of Ultra Shallow Junctions in Si Formed by Implantation

2007 ◽  
Vol 131-133 ◽  
pp. 497-502
Author(s):  
Niki Mitromara ◽  
J.H. Evans-Freeman ◽  
Ray Duffy
Keyword(s):  
Electric Fields ◽  
Deep Level ◽  
Depletion Region ◽  
Careful Selection ◽  
Type Region ◽  
Deep State ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions ◽  
Transient Spectroscopy ◽  
Selection Of

We have carried out DLTS in highly doped p+n Ultra Shallow Junctions (USJ) in Si formed by ion implantation. The samples were implanted either with a 10keV or a 5keV B implant at a dose of 5*1015cm15. The 10keV sample was also implanted with P and the 5keV samples were implanted with P and increasing doses of As to simulate an USJ in an n-well. Due to the high P and/or As implant doses, it was observed that a band offset also exists between the n-type implanted region and the n-type starting material. Therefore these samples contain another depletion region apart from the expected p+n depletion region. However, the electric fields in these regions act in opposite directions assisting the profiling of different regions after careful selection of biasing conditions. A deep state is observed in the n-type region at EC-0.34eV which has a complex Laplace DLTS signature, which has arisen due to the implantation process.

Electronic Properties of Grain Boundaries in GaAs: A Study of Oriented Bicrystals Prepared by Epitaxial Lateral Overgrowth

1982 ◽  
Vol 14 ◽  
Author(s):  
Jack P. Salerno ◽  
R. W. Mcclelland ◽  
J. G. Mavroides ◽  
John C. C. Fan ◽  
A. F. Witt
Keyword(s):  
Grain Boundary ◽  
Electronic Properties ◽  
Deep Level ◽  
Depletion Region ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Boundary States ◽  
Tilt Boundaries ◽  
Region Model ◽  
Transient Spectroscopy

ABSTRACTThe electronic properties of tilt boundaries with misorientation angles ranging from 0 to 30° in n-type GaAs bicrystal layers have been investigated. The current-voltage and capacitance-voltage characteristics are consistent with a double-depletion-region model. The height of the grain boundary potential barrier remains constant while the density of grain boundary states varies with misorientation angle. Deep level transient spectroscopy has revealed the presence of two bands of grain boundary states at approximately 0.65 and 0.9 eV below the conduction band. These states are attributed to bond reconstruction at the grain boundary.

Non-Contact, Wafer-Scale Deep Level Transient Spectroscopy (DLTS) Based on Surface Photovoltage (SPV)

1991 ◽  
Vol 240 ◽  
Author(s):  
Jacek Lagowski ◽  
Andrzej Morawski ◽  
Piotr Edelman
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Thermal Emission ◽  
Deep Level ◽  
Depletion Region ◽  
Capacitive Coupling ◽  
Surface Photovoltage ◽  
Surface Barrier ◽  
Schottky Type ◽  
Transient Spectroscopy ◽  
Non Destructive

ABSTRACTWe present a new version of a deep level transient spectroscopy which is suitable for non-contact, non-destructive determination of deep level defects in semiconductor wafers without preparation of metal-semiconductor diodes or p-n junctions.The method relies on deep level thermal emission measurements by the surface photovoltage (SPV) transient following an optical filling pulse. Non-equilibrium occupation of deep levels is realized within the native surface depletion region by the capture of excess minority carriers. Since the native Schottky-type surface barrier is commonly present on semiconductor surfaces, the approach requires no wafer pre-treatments. Non-contact SPV measurements are realized using a capacitive coupling to the wafer front and the wafer back.The quantitative principles of the SPV-DLTS approach are discussed using experimental data obtained on GaAs.

Deep Level Transient Spectroscopy (DLTS) Study of 4H-SiC Schottky Diodes and PiN Diodes

2019 ◽  
Vol 963 ◽  
pp. 516-519 ◽  
Author(s):  
Xiang Zhou ◽  
Gyanesh Pandey ◽  
Reza Ghandi ◽  
Peter A. Losee ◽  
Alexander Bolotnikov ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Diodes ◽  
High Energy ◽  
Pin Diode ◽  
Trap Level ◽  
Pin Diodes ◽  
Low Levels ◽  
Transient Spectroscopy

We have studied capacitance mode Deep Level Transient Spectroscopy (DLTS) of five 4H-SiC Schottky diode and PiN diode designs. Comparing with previous DLTS studies, we have identified four traps levels, Z1/2, EH1, EH3and EH5. Additionally, a new trap level, EH1, is prominent in blanket Al+and B+high-energy implanted samples but less so in mask-implanted samples. Al+implantation increases EH3(associated with silicon vacancy) and EH5, while B+implantation significantly reduces EH3. The Z1/2peak (associated with carbon vacancy) is reduced to very low levels after B+and Al+implantation.

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