Hydrogen in the Wide Bandgap Semiconductor Silicon Carbide

ABSTRACTSilicon carbide is a promising wide-bandgap semiconductor intended for use in fabrication of high temperature, high power, and fast switching microelectronics components running without cooling. For hydrogen sensing applications, silicon carbide is generally used in conjunction with either palladium or platinum, both of them being good catalysts for hydrogen. Here we are reporting on the temperature-dependent surface morphology and depth profile modifications of Au, Ti, and W electrical contacts deposited on silicon carbide substrates implanted with 20 keV Pd ions.

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Kev Ion Beam Induced Surface Modification of Sic Hydrogen Sensor

MRS Proceedings ◽

10.1557/proc-585-135 ◽

1999 ◽

Vol 585 ◽

Cited By ~ 1

Author(s):

C. I. Muntele ◽

D. Ila ◽

E. K. Williams ◽

D. B. Poker ◽

D. K. Hensley

Keyword(s):

Silicon Carbide ◽

Current Flow ◽

Chemical Potential ◽

Ion Beam ◽

Hydrogen Sensor ◽

Wide Bandgap ◽

Surface Chemical ◽

Detectable Change ◽

Wide Bandgap Semiconductor ◽

Palladium Coating

AbstractSilicon carbide, a wide-bandgap semiconductor, is currently used to fabricate an efficient high temperature hydrogen sensor. When a palladium coating is applied on the exposed surface of silicon carbide, the chemical reaction between palladium and hydrogen produces a detectable change in the surface chemical potential. Rather than applying a palladium film, we have implanted palladium ions into the silicon face of 6H, n-type SiC samples. The implantation energies and fluences, as well as the results obtained by monitoring the current through the sample in the presence of hydrogen are included below. The exposure to hydrogen of this kind of sensor while monitoring the current flow with respect to time, has revealed a completely different behavior than the samples that have Pd deposited as a surface layer.

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Silicon Carbide And Gallium Nitride Rf Power Devices

MRS Proceedings ◽

10.1557/proc-483-111 ◽

1997 ◽

Vol 483 ◽

Cited By ~ 13

Author(s):

C. E. Weitzel ◽

K. E. Moore

Keyword(s):

Silicon Carbide ◽

Gallium Nitride ◽

Output Power ◽

Wide Bandgap ◽

Rf Power ◽

Power Performance ◽

Power Devices ◽

Power Module ◽

Wide Bandgap Semiconductor ◽

Power Densities

AbstractImpressive RF power performance has been demonstrated by three radically different wide bandgap semiconductor power devices, SiC MESFET's, SiC SIT's, and AlGaN HFET's. AlGaN HFET's have achieved the highest fmax 97 GHz. 4H-SiC MESFET's have achieved the highest power densities, 3.3 W/mm at 850 MHz (CW) and at 10 GHz (pulsed). 4H-SiC SIT's have achieved the highest output power, 450 W (pulsed) at 600 MHz and 38 W (pulsed) at 3 GHz. Moreover a one kilowatt, 600 MHz SiC power module containing four multi-cell SIT's with a total source periphery of 94.5 cm has been demonstrated.

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SPICE Modeling of Advanced Silicon Carbide High Temperature Integrated Circuits

Materials Science Forum ◽

10.4028/www.scientific.net/msf.858.1070 ◽

2016 ◽

Vol 858 ◽

pp. 1070-1073 ◽

Cited By ~ 1

Author(s):

Akin Akturk ◽

Neil Goldsman ◽

Ahayi Ahyi ◽

Sarit Dhar ◽

Brendan Cusack ◽

...

Keyword(s):

Silicon Carbide ◽

Integrated Circuits ◽

Power Electronics ◽

Process Design ◽

Wide Band ◽

Wide Bandgap ◽

Semiconductor Technology ◽

Wide Band Gap ◽

Wide Bandgap Semiconductor ◽

Generation Power

Due to the wide band-gap and high thermal conductivity of the 4H polytype of silicon carbide (SiC) as well as the maturity of this polytype’s fabrication processes, 4H-SiC offers an extremely attractive wide bandgap semiconductor technology for harsh environment applications spanning a variety of markets. To this end, 4H-SiC power electronics is gradually emerging as the technology of choice for next-generation power electronics; however, relatively limited progress has been made with regards to silicon carbide integrated circuits (ICs). We address this problem by developing fabrication and design methods for the SiC IC components themselves, as well as complementary SPICE type compact models for these components, and thereby facilitate the development of future SiC ICs and Process Design Kits (PDKs).

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Growth and Nitridation of Silicon-Dioxide Films on Silicon-Carbide

MRS Proceedings ◽

10.1557/proc-470-413 ◽

1997 ◽

Vol 470 ◽

Cited By ~ 2

Author(s):

Denis Sweatman ◽

Sima Dimitrijev ◽

Hui-Feng Li ◽

Philip Tanner ◽

H. Barry Harrison

Keyword(s):

Silicon Carbide ◽

Silicon Dioxide ◽

Wide Bandgap ◽

Device Fabrication ◽

Nitrogen Doped ◽

Wide Bandgap Semiconductor ◽

Type Silicon ◽

Boron Doped ◽

P Type ◽

Mos Device

ABSTRACTSilicon-carbide offers great potential as a wide bandgap semiconductor for electronic applications. A good quality oxide dielectric will allow MOS device fabrication and in particular N-channel mosfets for their higher electron mobility. To date oxides on N-type silicon-carbide (nitrogen doped) have exhibited excellent characteristics while on P-type (aluminium or boron doped) the characteristics are poor. This paper presents results for the oxidation and subsequent nitridation of N and P-type silicon-carbide. It illustrates the role that nitrogen at the interface has in improving the trap densities and that nitric oxide provides the nitrogen well. Nitrous oxide, previously used to nitride silicon dioxide on silicon, is shown to substantially deteriorate the interface density of states for both N and P-type substrates.

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