Kev Ion Beam Induced Surface Modification of Sic Hydrogen Sensor

AbstractSilicon carbide, a wide-bandgap semiconductor, is currently used to fabricate an efficient high temperature hydrogen sensor. When a palladium coating is applied on the exposed surface of silicon carbide, the chemical reaction between palladium and hydrogen produces a detectable change in the surface chemical potential. Rather than applying a palladium film, we have implanted palladium ions into the silicon face of 6H, n-type SiC samples. The implantation energies and fluences, as well as the results obtained by monitoring the current through the sample in the presence of hydrogen are included below. The exposure to hydrogen of this kind of sensor while monitoring the current flow with respect to time, has revealed a completely different behavior than the samples that have Pd deposited as a surface layer.

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Surface Characterization of Silicon Carbide Following Shallow Implantation of Palladium Ions

MRS Proceedings ◽

10.1557/proc-0900-o12-15 ◽

2005 ◽

Vol 900 ◽

Author(s):

Claudiu I. Muntele ◽

Sergey Sarkisov ◽

Iulia Muntele ◽

Daryush Ila

Keyword(s):

Silicon Carbide ◽

Surface Characterization ◽

Wide Bandgap ◽

Electrical Contacts ◽

Temperature Dependent ◽

Wide Bandgap Semiconductor ◽

Hydrogen Sensing ◽

Fast Switching ◽

Sensing Applications

ABSTRACTSilicon carbide is a promising wide-bandgap semiconductor intended for use in fabrication of high temperature, high power, and fast switching microelectronics components running without cooling. For hydrogen sensing applications, silicon carbide is generally used in conjunction with either palladium or platinum, both of them being good catalysts for hydrogen. Here we are reporting on the temperature-dependent surface morphology and depth profile modifications of Au, Ti, and W electrical contacts deposited on silicon carbide substrates implanted with 20 keV Pd ions.

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Silicon Carbide And Gallium Nitride Rf Power Devices

MRS Proceedings ◽

10.1557/proc-483-111 ◽

1997 ◽

Vol 483 ◽

Cited By ~ 13

Author(s):

C. E. Weitzel ◽

K. E. Moore

Keyword(s):

Silicon Carbide ◽

Gallium Nitride ◽

Output Power ◽

Wide Bandgap ◽

Rf Power ◽

Power Performance ◽

Power Devices ◽

Power Module ◽

Wide Bandgap Semiconductor ◽

Power Densities

AbstractImpressive RF power performance has been demonstrated by three radically different wide bandgap semiconductor power devices, SiC MESFET's, SiC SIT's, and AlGaN HFET's. AlGaN HFET's have achieved the highest fmax 97 GHz. 4H-SiC MESFET's have achieved the highest power densities, 3.3 W/mm at 850 MHz (CW) and at 10 GHz (pulsed). 4H-SiC SIT's have achieved the highest output power, 450 W (pulsed) at 600 MHz and 38 W (pulsed) at 3 GHz. Moreover a one kilowatt, 600 MHz SiC power module containing four multi-cell SIT's with a total source periphery of 94.5 cm has been demonstrated.

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Hydrogen in the Wide Bandgap Semiconductor Silicon Carbide

Physica Scripta ◽

10.1238/physica.topical.108a00099 ◽

2004 ◽

pp. 99 ◽

Cited By ~ 4

Author(s):

M. S. Janson ◽

M. K. Linnarsson ◽

A. Hall�n ◽

B. G. Svensson ◽

N. Achtziger ◽

...

Keyword(s):

Silicon Carbide ◽

Wide Bandgap ◽

Wide Bandgap Semiconductor ◽

Semiconductor Silicon

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SPICE Modeling of Advanced Silicon Carbide High Temperature Integrated Circuits

Materials Science Forum ◽

10.4028/www.scientific.net/msf.858.1070 ◽

2016 ◽

Vol 858 ◽

pp. 1070-1073 ◽

Cited By ~ 1

Author(s):

Akin Akturk ◽

Neil Goldsman ◽

Ahayi Ahyi ◽

Sarit Dhar ◽

Brendan Cusack ◽

...

Keyword(s):

Silicon Carbide ◽

Integrated Circuits ◽

Power Electronics ◽

Process Design ◽

Wide Band ◽

Wide Bandgap ◽

Semiconductor Technology ◽

Wide Band Gap ◽

Wide Bandgap Semiconductor ◽

Generation Power

Due to the wide band-gap and high thermal conductivity of the 4H polytype of silicon carbide (SiC) as well as the maturity of this polytype’s fabrication processes, 4H-SiC offers an extremely attractive wide bandgap semiconductor technology for harsh environment applications spanning a variety of markets. To this end, 4H-SiC power electronics is gradually emerging as the technology of choice for next-generation power electronics; however, relatively limited progress has been made with regards to silicon carbide integrated circuits (ICs). We address this problem by developing fabrication and design methods for the SiC IC components themselves, as well as complementary SPICE type compact models for these components, and thereby facilitate the development of future SiC ICs and Process Design Kits (PDKs).

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Improved Sensitivity SiC Hydrogen Sensor

MRS Proceedings ◽

10.1557/proc-622-t6.6.1 ◽

2000 ◽

Vol 622 ◽

Cited By ~ 3

Author(s):

C. I. Muntele ◽

D. Ila ◽

E. K. Williams ◽

Iulia C. Muntele ◽

A. L. Evelyn ◽

...

Keyword(s):

Silicon Carbide ◽

Room Temperature ◽

Elevated Temperatures ◽

Hydrogen Sensor ◽

Low Energy ◽

Palladium Coating

ABSTRACTWe have produced silicon carbide sensors by two techniques: palladium coating and low energy palladium implantation. The palladium implantation was done at 550°C into the Si face of 6H, n-type SiC at various energies and at various fluences. The sensitivity of each sensor was measured at temperatures between 20°C to 400°C. The response of the SiC sensors produced by Pd implantation has revealed a completely different behavior than the SiC sensors produced by Pd deposition. In the Pd deposited SiC sensors, as well as in the ones reported in the literature [1, 2], the current rises in the presence of hydrogen at room temperature as well as at elevated temperatures. In the case of Pd implanted SiC sensors, the current decreases in the presence of hydrogen whenever the temperature is raised above 100°C [3].

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Growth and Nitridation of Silicon-Dioxide Films on Silicon-Carbide

MRS Proceedings ◽

10.1557/proc-470-413 ◽

1997 ◽

Vol 470 ◽

Cited By ~ 2

Author(s):

Denis Sweatman ◽

Sima Dimitrijev ◽

Hui-Feng Li ◽

Philip Tanner ◽

H. Barry Harrison

Keyword(s):

Silicon Carbide ◽

Silicon Dioxide ◽

Wide Bandgap ◽

Device Fabrication ◽

Nitrogen Doped ◽

Wide Bandgap Semiconductor ◽

Type Silicon ◽

Boron Doped ◽

P Type ◽

Mos Device

ABSTRACTSilicon-carbide offers great potential as a wide bandgap semiconductor for electronic applications. A good quality oxide dielectric will allow MOS device fabrication and in particular N-channel mosfets for their higher electron mobility. To date oxides on N-type silicon-carbide (nitrogen doped) have exhibited excellent characteristics while on P-type (aluminium or boron doped) the characteristics are poor. This paper presents results for the oxidation and subsequent nitridation of N and P-type silicon-carbide. It illustrates the role that nitrogen at the interface has in improving the trap densities and that nitric oxide provides the nitrogen well. Nitrous oxide, previously used to nitride silicon dioxide on silicon, is shown to substantially deteriorate the interface density of states for both N and P-type substrates.

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Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

Solid-State Electronics ◽

10.1016/0038-1101(96)00045-7 ◽

1996 ◽

Vol 39 (10) ◽

pp. 1409-1422 ◽

Cited By ~ 923

Author(s):

J.B. Casady ◽

R.W. Johnson

Keyword(s):

Silicon Carbide ◽

High Temperature ◽

Wide Bandgap ◽

Wide Bandgap Semiconductor ◽

Temperature Applications

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Fin Level Defect Isolation Inside a FinFET Using Electron Beam Alteration of Current Flow

ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2017p0473 ◽

2017 ◽

Author(s):

H.J. Ryu ◽

A.B. Shah ◽

Y. Wang ◽

W.-H. Chuang ◽

T. Tong

Keyword(s):

Electron Microscopy ◽

Electron Beam ◽

Focused Ion Beam ◽

Current Flow ◽

Ion Beam ◽

The Body ◽

Complete Understanding ◽

Root Cause ◽

Transmission Electron ◽

Defect Isolation

Abstract When failure analysis is performed on a circuit composed of FinFETs, the degree of defect isolation, in some cases, requires isolation to the fin level inside the problematic FinFET for complete understanding of root cause. This work shows successful application of electron beam alteration of current flow combined with nanoprobing for precise isolation of a defect down to fin level. To understand the mechanism of the leakage, transmission electron microscopy (TEM) slice was made along the leaky drain contact (perpendicular to fin direction) by focused ion beam thinning and lift-out. TEM image shows contact and fin. Stacking fault was found in the body of the silicon fin highlighted by the technique described in this paper.

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