scholarly journals Design of high performance, low power sub thresholds ram using source coupled logic for implantable applications.

2018 ◽  
Vol 7 (2.12) ◽  
pp. 205
Author(s):  
T Vasudeva Reddy ◽  
Dr B.K. Madhavi

Low power circuits functioning in sub threshold were proposed in earlier seventies. Recently, growing with the need of low power consumption, the low power circuits have became more attractive. However, the act of sub threshold design logics has become sensitive to the supply voltage & process variations like temperature and so on. In sub threshold region of operations the supply voltage (Vgs) is less than the threshold (Vth).This leads to less power dissipation in over all circuit, but drastically increment in propagation delay. The major intention of the paper is to offer new low power & less delay digital circuits. SRAM is the major power drawing element and dissipation is about 40% in total power. The primary objective is to design of sub threshold SRAM design, Functionality and performance is estimated from the power and delay.The second objective is to offer novel Source coupled logic based SRAM (ST-SC SRA) M & Operating these design under sub threshold operating region. Performance is analyzed through power and delay. Finally comparing the traditional sub threshold SRAM with source coupled based SRAM in power and delay on par with the performance. Discussing some of the applications, where there is a requirement of less power and delay. 

2012 ◽  
Vol 203 ◽  
pp. 469-473
Author(s):  
Ruei Chang Chen ◽  
Shih Fong Lee

This paper presents the design and implementation of a novel pulse width modulation control class D amplifiers chip. With high-performance, low-voltage, low-power and small area, these circuits are employed in portable electronic systems, such as the low-power circuits, wireless communication and high-frequency circuit systems. This class D chip followed the chip implementation center advanced design flow, and then was fabricated using Taiwan Semiconductor Manufacture Company 0.35-μm 2P4M mixed-signal CMOS process. The chip supply voltage is 3.3 V which can operate at a maximum frequency of 100 MHz. The total power consumption is 2.8307 mW, and the chip area size is 1.1497×1.1497 mm2. Finally, the class D chip was tested and the experimental results are discussed. From the excellent performance of the chip verified that it can be applied to audio amplifiers, low-power circuits, etc.


2006 ◽  
Vol 2 (1) ◽  
pp. 45-55 ◽  
Author(s):  
David Rios-Arambula ◽  
Aurelien Buhrig ◽  
Gilles Sicard ◽  
Marc Renaudin

2015 ◽  
Vol 24 (08) ◽  
pp. 1550124 ◽  
Author(s):  
Majid Moghaddam ◽  
Mohammad Hossein Moaiyeri ◽  
Mohammad Eshghi ◽  
Ali Jalali

This paper presents a new high-performance and low-power single-supply voltage level converter (SSLC) and a new carry save array multiplier based on clustered-voltage scaling (CVS) technique for ultra-low-power applications. The multiplier operates with low and high supply voltage (V DDL , V DDH ) and at its end stage, the proposed low-power SSLC is utilized to prevent static power dissipation at the next stage working with V DDH and to enhance the output driving capability. In the proposed SSLC, dynamically-controlled source-body voltage, reduced drain induced barrier lowering (DIBL) effect and diode-connected transistor with body-biasing have been utilized properly in order to reduce the power consumption significantly without considerable speed degradation. The results of the simulations conducted using Cadence with standard 90-nm CMOS technology demonstrate the superiority of the proposed multiplier utilizing the proposed LC in terms of static and total power consumptions as well as power-delay product (PDP) as compared to the multipliers utilizing the previous level converters (LCs) and the single supply multiplier. It is worth mentioning that the static power, total power and PDP of the proposed low-power multiplier are on average 75%, 73% and 16%, respectively lower than the single-supply multiplier.


2005 ◽  
Vol 15 (02) ◽  
pp. 459-476
Author(s):  
C. PATRICK YUE ◽  
JAEJIN PARK ◽  
RUIFENG SUN ◽  
L. RICK CARLEY ◽  
FRANK O'MAHONY

This paper presents the low-power circuit techniques suitable for high-speed digital parallel interfaces each operating at over 10 Gbps. One potential application for such high-performance I/Os is the interface between the channel IC and the magnetic read head in future compact hard disk systems. First, a crosstalk cancellation technique using a novel data encoding scheme is introduced to suppress electromagnetic interference (EMI) generated by the adjacent parallel I/Os . This technique is implemented utilizing a novel 8-4-PAM signaling with a data look-ahead algorithm. The key circuit components in the high-speed interface transceiver including the receive sampler, the phase interpolator, and the transmitter output driver are described in detail. Designed in a 0.13-μm digital CMOS process, the transceiver consumes 310 mW per 10-Gps channel from a I-V supply based on simulation results. Next, a 20-Gbps continuous-time adaptive passive equalizer utilizing on-chip lumped RLC components is described. Passive equalizers offer the advantages of higher bandwidth and lower power consumption compared with conventional designs using active filter. A low-power, continuous-time servo loop is designed to automatically adjust the equalizer frequency response for the optimal gain compensation. The equalizer not only adapts to different channel characteristics, but also accommodates temperature and process variations. Implemented in a 0.25-μm, 1P6M BiCMOS process, the equalizer can compensate up to 20 dB of loss at 10 GHz while only consumes 32 mW from a 2.5-V supply.


2015 ◽  
Vol 39 (8) ◽  
pp. 962-972 ◽  
Author(s):  
Sandeep Miryala ◽  
Valerio Tenace ◽  
Andrea Calimera ◽  
Enrico Macii ◽  
Massimo Poncino

2013 ◽  
Vol 22 (10) ◽  
pp. 1340033 ◽  
Author(s):  
HONGLIANG ZHAO ◽  
YIQIANG ZHAO ◽  
YIWEI SONG ◽  
JUN LIAO ◽  
JUNFENG GENG

A low power readout integrated circuit (ROIC) for 512 × 512 cooled infrared focal plane array (IRFPA) is presented. A capacitive trans-impedance amplifier (CTIA) with high gain cascode amplifier and inherent correlated double sampling (CDS) configuration is employed to achieve a high performance readout interface for the IRFPA with a pixel size of 30 × 30 μm2. By optimizing column readout timing and using two operating modes in column amplifiers, the power consumption is significantly reduced. The readout chip is implemented in a standard 0.35 μm 2P4M CMOS technology. The measurement results show the proposed ROIC achieves a readout rate of 10 MHz with 70 mW power consumption under 3.3 V supply voltage from 77 K to 150 K operating temperature. And it occupies a chip area of 18.4 × 17.5 mm2.


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