The Effect of Annealing Conditions on Magnetron Sputtered Superconducting Tl-Based Thin Films

1989 ◽  
Vol 169 ◽  
Author(s):  
S.H. Liou
Keyword(s):  
Annealing Temperature ◽  
Superconducting Films ◽  
Film Plane ◽  
Major Phase ◽  
X Ray ◽  
Annealing Conditions ◽  
Post Annealing ◽  
Heat Treated ◽  
Post Annealing Temperature

AbstractThe annealing steps have been shown to be a crucial determinant of the quality of Tl‐based superconducting films. In this study, we discuss the formation of the superconducting Tl2Ba2CaCu2O8 and Tl2Ba2Ca2Cu3O10 phases with varied post‐annealing temperature and fixed annealing time. A x‐ray, electron micro‐probe, and scanning electron microscopy were carried out to evaluate the structure of superconducting phases formed for each annealing condition. For films deposited on SrTiO3 substrates and heat‐treated at 870°C for 15 min, the lower Tc phase Tl2Ba2CaCu2O8 becomes a major phase. The films consist of nearly pure Tl2Ba2Ca2Cu3O10 phase with Tc (R=0) in the range of 100K to 118K and c‐axis perpendicular to the film plane were obtained after annealing 880‐890°C for 15 min. These films were epitaxy growth on SrTi03 substrates.

scholarly journals Structural Studies of Zno Nanostructures on Porous Silicon: Effect of Post-Annealing Temperature

2018 ◽  
Vol 7 (3.11) ◽  
pp. 48
Author(s):  
Kevin Alvin Eswar ◽  
Mohd Husairi Fadzillah Suhaimi ◽  
Muliyadi Guliling ◽  
Zuraida Khusaimi ◽  
Mohamad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Annealing Temperature ◽  
Electrochemical Etching ◽  
Texture Coefficient ◽  
Zno Nanostructures ◽  
Structural Studies ◽  
X Ray Diffraction ◽  
X Ray ◽  
Post Annealing ◽  
Post Annealing Temperature

ZnO Nanostructures have been successfully deposited on of Porous silicon (PSi) via wet colloid chemical approach. PSi was prepared by electrochemical etching method. ZnO/PSi thin films were annealed in different temperature in the range of 300 °C to 700 °C. Surface morphology studies were conducted using field emission scanning microscopy (FESEM). Flower-like structures of ZnO were clearly seen at annealing temperature of 500 °C. The X-ray diffraction spectra (XRD) have been used to investigate the structural properties. There are three dominant peaks referred to plane (100), (002) and (101) indicates that ZnO has a polycrystalline hexagonal wurtzite structures. Plane (002) shows the highest intensities at annealing temperature of 500 °C. Based on plane (002) analysis, the sizes were in range of 30.78 nm to 55.18. In addition, it was found that the texture coefficient of plane (002) is stable compared to plane (100) and (101). 

STRUCTURE AND MAGNETIC PROPERTIES IN Mn-DOPED Si

2007 ◽  
Vol 21 (18n19) ◽  
pp. 3469-3472 ◽  
Author(s):  
Z. Y. ZHAI ◽  
X. S. WU ◽  
W. ZHANG ◽  
B. QIAN ◽  
Y. M. ZHANG ◽  
...  
Keyword(s):  
Room Temperature ◽  
Annealing Temperature ◽  
Magnetic Circular Dichroism ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Post Annealing ◽  
Two Phases ◽  
Mn Doped ◽  
Post Annealing Temperature

The composition of Mn 0.05 Si 0.95 polycrystalline films on (001) Si substrate are prepared by vacuum deposition and post-crystallization processes. X-ray diffraction studies indicate that there are two phases coexist in the film: tetragonal, Mn 4 Si 7 and diamond-like Si (Mn) . The content of Si(Mn) phase increases with increasing the post-annealing temperature. Temperature dependence of the magnetization shows that there are two ferromagnetic phases with Curie temperature of around 50 K and near room temperature, which is confirmed by x-ray magnetic circular dichroism (XMCD).

Effect of Post Annealing Temperature on Cerium Doped ZnO Nanostructures

2013 ◽  
Vol 481 ◽  
pp. 45-48 ◽  
Author(s):  
Chetan K. Kasar ◽  
Ulhas S. Sonawane ◽  
D.S. Patil
Keyword(s):  
Annealing Temperature ◽  
Structural And Optical Properties ◽  
Minor Variation ◽  
X Ray ◽  
Post Annealing ◽  
Coating Method ◽  
Average Transmission ◽  
Doped Zno ◽  
A Minor ◽  
Post Annealing Temperature

In this paper, the effect of post annealing temperature for 5% Cerium doped ZnO thin films have been investigated. Films have been deposited on to the glass substrate using spin coating method. The structural and optical properties of the films were characterized using X-ray diffractometer and UV-spectrophotometer. Transmission of the films was found to be increase with increasing post annealing temperature. Average transmission of all the films was found to be more than 90%. Optical band gap show a minor variation with post annealing temperature. Nanostructures of cerium doped ZnO have been confirmed through AFM.

scholarly journals Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1802
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Yantao Liu ◽  
Yijun Zhang ◽  
Bian Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Maximum Size ◽  
Cross Sectional ◽  
Post Annealing ◽  
Maximum Conductivity ◽  
Different Temperatures ◽  
Post Annealing Temperature

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

Influence of Post-Annealing Temperature on the Material Properties of Zinc Oxide Nanorods

2010 ◽  
Vol 10 (10) ◽  
pp. 6419-6423 ◽  
Author(s):  
Sharul Ashikin Kamaruddin ◽  
Mohd Zainizan Sahdan ◽  
Kah-Yoong Chan ◽  
Mohamad Rusop ◽  
Hashim Saim
Keyword(s):  
Zinc Oxide ◽  
Material Properties ◽  
Annealing Temperature ◽  
Zinc Oxide Nanorods ◽  
Post Annealing ◽  
Oxide Nanorods ◽  
Post Annealing Temperature

X-Ray Diffraction Analysis on Crystallite Development of Nanostructured Aluminium

2006 ◽  
Vol 118 ◽  
pp. 53-58
Author(s):  
Elisabeth Meijer ◽  
Nicholas Armstrong ◽  
Wing Yiu Yeung
Keyword(s):  
Crystallite Size ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Equal Channel Angular Extrusion ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
Integral Breadth ◽  
X Ray ◽  
Heat Treated ◽  
Diffraction Peaks

This study is to investigate the crystallite development in nanostructured aluminium using x-ray line broadening analysis. Nanostructured aluminium was produced by equal channel angular extrusion at room temperature to a total deformation strain of ~17. Samples of the extruded metal were then heat treated at temperatures up to 300oC. High order diffraction peaks were obtained using Mo radiation and the integral breadth was determined. It was found that as the annealing temperature increased, the integral breadth of the peak reflections decreased. By establishing the modified Williamson-Hall plots (integral breadth vs contract factor) after instrumental correction, it was determined that the crystallite size of the metal was maintained ~80 nm at 100oC. As the annealing temperature increased to 200oC, the crystallite size increased to ~118 nm. With increasing annealing temperature, the hardness of the metal decreased from ~60 HV to ~45 HV.

Effect of Annealing on Structural and Optical Properties of Pulsed Laser Deposited Titanium Dioxide Thin Films

2009 ◽  
Vol 67 ◽  
pp. 65-70 ◽  
Author(s):  
Gaurav Shukla ◽  
Alika K. Khare
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Annealing Temperature ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Tio2 Thin Films ◽  
Post Annealing ◽  
Post Annealing Temperature

TiO2 is a widely studied material for many important applications in areas such as environmental purification, photocatalyst, gas sensors, cancer therapy and high effect solar cell. However, investigations demonstrated that the properties and applications of titanium oxide films depend upon the nature of the crystalline phases present in the films, i.e. anatase and rutile phases. We report on the pulsed laser deposition of high quality TiO2 thin films. Pulsed Laser deposition of TiO2 thin films were performed in different ambient viz. oxygen, argon and vacuum, using a second harmonic of Nd:YAG laser of 6 ns pulse width. These deposited films of TiO2 were further annealed for 5hrs in air at different temperatures. TiO2 thin films were characterized using x-ray diffraction, SEM, photoluminescence, transmittance and reflectance. We observed effect of annealing over structural, morphological and optical properties of TiO2 thin films. The anatase phase of as-deposited TiO2 thin films is found to change into rutile phase with increased annealing temperature. Increase in crystalline behaviour of thin films with post-annealing temperature is also observed. Surface morphology of TiO2 thin films is dependent upon ambient pressure and post- annealing temperature. TiO2 thin films are found to be optically transparent with very low reflectivity hence will be suitable for antireflection coating applications.

Post-annealing-temperature-dependent Magnetic Anisotropy of CoFe$_2$O$_4$ Thin Films

2013 ◽  
Vol 63 (12) ◽  
pp. 1328-1332
Author(s):  
D. Y. Lee ◽  
C. -W. Cho ◽  
S. H. Lee ◽  
J. W. Kim ◽  
H. K. Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Annealing Temperature ◽  
Temperature Dependent ◽  
Post Annealing ◽  
Post Annealing Temperature
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