scholarly journals ANALISIS PENGARUH KANDUNGAN SIC, TEMPERATUR CAIRAN, KECEPATAN PUTAR DAN DURASI WAKTU PENGADUKAN PADA KEKUATAN TARIK KOMPOSIT AL-SIC

ROTASI ◽  
2014 ◽  
Vol 16 (1) ◽  
pp. 7 ◽  
Author(s):  
Sadi Sadi ◽  
M. Waziz Wildan ◽  
Suyitno Suyitno
Keyword(s):  
Silicon Carbide ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Stir Casting ◽  
Scanning Electron

Tujuan penelitian ini adalah untuk menganalisis pengaruh kandungan SiC, temperatur cairan, kecepatan putar dan durasi waktu pengadukan pada kekuatan tarik komposit Al-SiC menggunakan metode Taguchi. Material komposit yang digunakan adalah aluminium paduan Al-Si sebagai matrik dan partikel SiC (silicon carbide) ukuran -400 mesh sebagai penguat. Spesimen komposit Al-SiC dibuat menggunakan proses stir casting. Kekuatan tarik spesimen komposit Al-SiC diuji menggunakan mesin uji tarik servopulser. Kandungan SiC, temperatur  cairan, kecepatan putar dan durasi waktu pengadukan, masing-masing menggunakan 4 variasi. Hasil eksperimen menunjukkan bahwa menaikkan kecepatan putar pengadukan sampai 300 rpm dan durasi waktu pengadukan sampai 30 menit mampu menaikkan kekuatan tarik komposit Al-SiC, tetapi menaikkan kandungan SiC di atas 5 % berat dan temperatur cairan di atas 680oC dapat menurunkan kekuatan tariknya. Kandungan SiC pengaruhnya paling besar pada kekuatan tarik komposit Al-SiC dengan kontribusi 68,86 %. Sruktur mikro coran komposit Al-SiC diamati menggunakan scanning electron microscope (SEM).

Fabrication of Microchannels on SiC Substrate by Femtosecond Laser

2012 ◽  
Vol 557-559 ◽  
pp. 1322-1325 ◽  
Author(s):  
Yi He Li ◽  
Hua Xiao ◽  
Gong Yi Li ◽  
Jian Feng ◽  
Xiao Dong Li
Keyword(s):  
Silicon Carbide ◽  
Electron Microscope ◽  
Laser Pulse ◽  
Scanning Electron Microscope ◽  
Femtosecond Laser ◽  
Optical Microscope ◽  
Pdms Stamp ◽  
The Relationship ◽  
Scanning Electron ◽  
Micro Patterns

A novel femtosecond laser directly writing method was utilized to fabricate microchannels on silicon carbide (SiC) substrate. The micro patterns were transferred to a Polydimethylsiloxane (PDMS) stamp, characterized by both optical microscope and scanning electron microscope (SEM). The relationship between size (depth and width) of channels and power of laser pulse were discussed in detail.

High-Density Ceramic Materials on the Basis of Silicon Carbide

2013 ◽  
Vol 592-593 ◽  
pp. 397-400
Author(s):  
Dinara Sultanovna Dallaeva ◽  
Gulnara Darvinovna Kardashova ◽  
Gadjimet Kerimovich Safaraliev ◽  
Pavel Tománek
Keyword(s):  
Solid Solution ◽  
Silicon Carbide ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Aluminum Nitride ◽  
Hot Pressing ◽  
Manufacturing Process ◽  
Ceramic Materials ◽  
High Density ◽  
Scanning Electron

This study describes the principles of synthesis and technological features of composition ceramics formation on the basis of silicon carbide and aluminum nitride by hot-pressing. The structural properties and composition of the ceramics were investigated by scanning electron microscope and the formation of the solid solution is confirmed. The elements distribution on the surface of failure pattern is shown. The results of the study are useful for optimization of manufacturing process of structural and functional high-density ceramics.

Influence of Silicon on Interface Reaction during Aluminium-Silicon Carbide Bonding

2010 ◽  
Vol 123-125 ◽  
pp. 129-132
Author(s):  
G.G. Sozhamannan ◽  
S. Balasivanandha Prabu
Keyword(s):  
Silicon Carbide ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Tensile Test ◽  
Interface Reaction ◽  
Interface Fracture ◽  
Al Alloy ◽  
Interfacial Characteristics ◽  
Concentration Levels ◽  
Scanning Electron

The effects of Si on the interfacial characteristics of Al-6.25 Si alloy/SiC and Al-11.12 Si alloy / SiC were investigated. The different compositions of aluminium and silicon carbide samples were prepared at various processing temperatures with constant holding time. The characteristics of interface between Al alloy and SiC were evaluated using tensile test and microhardness test. The interface morphologies were evaluated using scanning electron microscope and energy dispersive spectroscopy. The results shown that the interface fracture strength and microhardness values increased at the interface when Si concentration levels were increased.

scholarly journals Tribological, Thermal and Corrosive behaviour of aluminium alloy 2219 reinforced by Si3N4 nanosized powder

2021 ◽  
Author(s):  
Manjunatha C J ◽  
B. Venkata Narayana ◽  
D Bino Prince Raja ◽  
Rimal Isaac R S
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Aluminium Alloy ◽  
Corrosion Behaviour ◽  
Thermo Gravimetric Analysis ◽  
Stir Casting ◽  
High Energy ◽  
Gravimetric Analysis ◽  
Test Pieces ◽  
Scanning Electron

Abstract The MMC technique is the most effective contrast method when compared with other techniques. By using the method of high energy stir casting, Aluminium alloy Al2219 is reinforced with various percentages of Si3N4 (0, 3, 6, and 9%) particles. X-ray diffraction along with Scanning electron microscope was performed to characterize the composite. The mechanical and thermal behaviours such as differential thermal analysis thermo gravimetric analysis/, tensile , wear and hardness behaviours were investigated. By using electro chemical potentiodynamic polarization test, the consequence of heat treatment on the corrosion behaviour of the composites when compared to its matrix in 3.5 % NaCl when at 600 rpm was also investigated. In this experimental study, the wear of the aluminium composites was significantly decreased on addition of Si3N4 particles. The study also revealed that, since the inclusion of Si3N4 in the samples and compared to the base aluminium alloy, the mechanical properties of the composites, such as wear resistance , hardness and tensile strength increased by percentage. The surface morphology and Scanning electron microscope analysis of worn surfaces in the test pieces unfold that with the increase in reinforcement content, wear rate decreases.

scholarly journals Chemical Assisted Laser Beam Machining of  SiC Ceramic and Optimization of  Process Parameters

2021 ◽  
Author(s):  
Ketema Bobe Bonsa ◽  
Moera Gutu Jiru ◽  
BALKESHWAR SINGH ◽  
Tewodros Derese Gidebo
Keyword(s):  
Surface Roughness ◽  
Silicon Carbide ◽  
Wear Resistance ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Laser Beam ◽  
Smooth Surface ◽  
Conceptual Combination ◽  
Software Analysis ◽  
Scanning Electron

Abstract Chemo mechanical laser beam assisted finishing is the process of a conceptual combination of a fundamental cognitive process. In this process, three basic concepts are synthesized to obtain a smooth surface of silicon carbide. Three different chemicals of H2SO4 , HCl, and HF with a 50% solution with purified water were used. Continuous mode CO2 power from 250W-300W was used to melt the surface after acid was applied. The smooth surface was evaluated using morphology, including pore pattern, pore depth, and pore width was studied under a scanning electron microscope, and the surface roughness, wear-resistance, and hardness were analyzed using a non-contact surface profilometer, scratch tester TR-101, and Digital Rockwell hardness device respectively. The results were statistically analyzed using Design expert software analysis of variance (ANOVA). The results showed a significant change in the pore pattern, crystal structure, surface roughness, wear-resistance, and hardness. This result was verified by scanning electron microscope, optical microscope, Non-contact profilometer, and scratch tester TR-101machine. The hardness of the smooth surface was increased as well as surface roughness and the coefficient of friction also improved as compared to substrate silicon carbide.

Whole-Wafer Optical Mapping of Defects in Insulating Silicon Carbide Wafers

2002 ◽  
Vol 742 ◽  
Author(s):  
Millard G. Mier ◽  
John J. Boeckl ◽  
David A. Hill ◽  
Scott D. Bertrand ◽  
Easwar Ramakrishnan ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Visible Light ◽  
Recent Progress ◽  
Secondary Electron ◽  
Optical Mapping ◽  
Optical Microscope ◽  
Scanning Electron

ABSTRACTPlotting defect locations in insulating SiC presents a challenge because the total number of locations on a wafer is so large. We scan the wafer with visible light at an appropriate resolution and sort out transmissions appropriate for the defects we are looking for. Under these conditions, we find that voids and micropipes reduce the pixel transmission to 0.3 to 0.5. Sorting for this transmission reduces the number of pixels of interest to a manageable number, especially with recent progress in growing lower defect SiC. Now a commercial plotting program can easily display defect locations within a circle representing the wafer boundary. We verify the defect locations by scanning electron microscope secondary electron images and scanning optical microscope visible-light images at several resolutions.

The Alteration of the Pore Spaces in Sandstones

1973 ◽  
Vol 31 ◽  
pp. 210-211
Author(s):  
R. E. Ferrell ◽  
G. G. Paulson
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
The Other ◽  
Coarse Grained ◽  
Depositional Fabric ◽  
Soluble Components ◽  
Scanning Electron ◽  
Shape And Size

The pore spaces in sandstones are the result of the original depositional fabric and the degree of post-depositional alteration that the rock has experienced. The largest pore volumes are present in coarse-grained, well-sorted materials with high sphericity. The chief mechanisms which alter the shape and size of the pores are precipitation of cementing agents and the dissolution of soluble components. Each process may operate alone or in combination with the other, or there may be several generations of cementation and solution.The scanning electron microscope has ‘been used in this study to reveal the morphology of the pore spaces in a variety of moderate porosity, orthoquartzites.

The Broad Applications of the Scanning Electron Microscope

1969 ◽  
Vol 27 ◽  
pp. 20-21
Author(s):  
C. T. Nightingale ◽  
S. E. Summers ◽  
T. P. Turnbull
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Light Microscopy ◽  
Surface Topography ◽  
Great Depth ◽  
Resolving Power ◽  
Depth Of Field ◽  
Pictorial Representations ◽  
Scanning Electron

The ease of operation of the scanning electron microscope has insured its wide application in medicine and industry. The micrographs are pictorial representations of surface topography obtained directly from the specimen. The need to replicate is eliminated. The great depth of field and the high resolving power provide far more information than light microscopy.

Sign in / Sign up

Export Citation Format

Share Document