scholarly journals Light sources for high-volume manufacturing EUV lithography: technology, performance, and power scaling

2017 ◽  
Vol 6 (3-4) ◽  
Author(s):  
Igor Fomenkov ◽  
David Brandt ◽  
Alex Ershov ◽  
Alexander Schafgans ◽  
Yezheng Tao ◽  
...  
Keyword(s):  
Extreme Ultraviolet ◽  
High Volume ◽  
Light Sources ◽  
Power Scaling ◽  
Spectral Content ◽  
Critical Areas ◽  
Euv Lithography ◽  
New Development ◽  
And Performance ◽  
193 Nm

AbstractExtreme ultraviolet (EUV) lithography is expected to succeed in 193-nm immersion multi-patterning technology for sub-10-nm critical layer patterning. In order to be successful, EUV lithography has to demonstrate that it can satisfy the industry requirements in the following critical areas: power, dose stability, etendue, spectral content, and lifetime. Currently, development of second-generation laser-produced plasma (LPP) light sources for the ASML’s NXE:3300B EUV scanner is complete, and first units are installed and operational at chipmaker customers. We describe different aspects and performance characteristics of the sources, dose stability results, power scaling, and availability data for EUV sources and also report new development results.

Light sources for high-volume manufacturing EUV lithography: technology, performance, and power scaling

nano Online ◽  
2018 ◽  
Author(s):  
Igor Fomenkov ◽  
David Brandt ◽  
Alex Ershov ◽  
Alexander Schafgans ◽  
Yezheng Tao ◽  
...  
Keyword(s):  
High Volume ◽  
Light Sources ◽  
Power Scaling ◽  
Euv Lithography ◽  
Lithography Technology

High-NA EUV lithography: current status and outlook for the future

2022 ◽  
Author(s):  
Harry Jay Levinson
Keyword(s):  
High Resolution ◽  
Extreme Ultraviolet ◽  
Numerical Aperture ◽  
High Volume ◽  
Current Status ◽  
Light Sources ◽  
Line Edge Roughness ◽  
Optical Scanners ◽  
Euv Lithography ◽  
Edge Roughness

Abstract High-NA extreme ultraviolet (EUV) lithography is currently in development. Fabrication of exposure tools and optics with a numerical aperture (NA) equal to 0.55 has started at ASML and Carl Zeiss. Lenses with such high NA will have very small depths-of-focus, which will require improved focus systems and significant improvements in wafer flatness during processing. Lenses are anamorphic to address mask 3D issues, which results in wafer field sizes of 26 mm × 16.5 mm, half that of lower NA EUV tools and optical scanners. Production of large die will require stitching. Computational infrastructure is being created to support high-NA lithography, including simulators that use Tatian polynomials to characterize the aberrations of lenses with central obscurations. High resolution resists that meet the line-edge roughness (LER) and defect requirements for high-volume manufacturing (HVM) also need to be developed. High power light sources will also be needed to limit photon shot noise.

ITRS lithography roadmap: 2015 challenges

2015 ◽  
Vol 4 (4) ◽  
Author(s):  
Mark Neisser ◽  
Stefan Wurm
Keyword(s):  
Self Assembly ◽  
Lower Cost ◽  
Extreme Ultraviolet ◽  
Cost Effective ◽  
High Volume ◽  
Time Frame ◽  
Maskless Lithography ◽  
Euv Lithography ◽  
Improved Performance ◽  
Better Than

AbstractIn the past few years, novel methods of patterning have made considerable progress. In 2011, extreme ultraviolet (EUV) lithography was the front runner to succeed optical lithography. However, although EUV tools for pilot production capability have been installed, its high volume manufacturing (HVM) readiness continues to be gated by productivity and availability improvements taking longer than expected. In the same time frame, alternative and/or complementary technologies to EUV have made progress. Directed self-assembly (DSA) has demonstrated improved defectivity and progress in integration with design and pattern process flows. Nanoimprint improved performance considerably and is pilot production capable for memory products. Maskless lithography has made progress in tool development and could have an α tool ready in the late 2015 or early 2016. But they all have to compete with multiple patterning. Quadruple patterning is already demonstrated and can pattern lines and spaces down to close to 10-nm half pitch. The other techniques have to do something better than quadruple patterning does to be chosen for implementation. DSA and NIL promise a lower cost. EUV promises a simpler and shorter process and the creation of 2-D patterns more easily with much reduced complexity compared to multiple patterning. Maskless lithography promises to make chip personalization easy and to be particularly cost effective for low-volume chip designs. Decision dates for all of the technologies are this year or next year.

Materials Challenges and Alternatives for Advanced Photolithographic Patterning: From 193 to 157 nm and Beyond

2000 ◽  
Vol 636 ◽  
Author(s):  
Elsa Reichmanis ◽  
Omkaram Nalamasu ◽  
Francis M. Houlihan
Keyword(s):  
Integrated Circuits ◽  
Polymer Materials ◽  
Materials Chemistry ◽  
Euv Lithography ◽  
Wide Range ◽  
Alternative Materials ◽  
Aqueous Base ◽  
Resolution Imaging ◽  
And Performance ◽  
193 Nm

AbstractIn the last decade, major advances in fabricating electronic devices have placed increasing demands on microlithography, the technology used to generate today's integrated circuits. Within the next few years, a new form of lithography will be required that routinely produces features of less than 0.1 μ. As the exposing wavelength of light decreases to facilitate higher resolution imaging, the opacity of traditional materials precludes their use; and major research efforts to develop alternate materials are underway. Through understanding of materials structure and its relationship to device process requirements and performance, cycloolefin based polymers provide for sub-0.1 μm imaging capability using 193 nm exposure. Alicyclic monomers such as norbornene are readily copolymerized with other units to afford a wide range of alternative matrices that exhibit transparency at the exposing wavelength and aqueous base solubility. Further reduction in imaging wavelength necessitates renewed research to define alternative materials platforms. Materials transparency is the key issue to be addressed for 157 nm or EUV lithography. Novel polymer architectures including fluorinated polymers will be required to effect sufficient transparency coupled with requisite solubility, sensitivity, contrast etching resistance, shelf life and purity. Each of these issues will be discussed from the perspective of polymer materials chemistry.

Understanding the Exposure Process in the Extreme Ultra Violet Lithography

2021 ◽  
Vol 21 (8) ◽  
pp. 4466-4469
Author(s):  
Sang-Kon Kim
Keyword(s):  
Extreme Ultraviolet ◽  
Ultra Violet ◽  
Chemically Amplified ◽  
Euv Lithography ◽  
Metal Organic ◽  
Deep Ultraviolet ◽  
Chemically Amplified Resists ◽  
193 Nm ◽  
Physical And Chemical ◽  
Exposure Process

Although being the optical lithography, the extreme ultraviolet (EUV) lithography with 13.5-nm wavelength is very different from the deep ultraviolet (DUV) lithography with 193-nm wavelength. Hence, the understanding of the complex detailed EUV mechanisms to cause a chemical reaction in chemically amplified resists (CARs) is required to develop EUV resists and exposure process. In this paper, for organic, metal-organic and metal-oxide resists, the electron-scattering model of exposure mechanisms needs to include the elastic and inelastic mean free paths. On top of that, Dill’s parameters of DUV and EUV resisters from the photo-generated reaction are discussed to indicate the physical and chemical characteristics. For CAR and EUV resists, Dill B parameter is large than Dill A and B parameters.

scholarly journals Development of Laser-Produced Tin Plasma-Based EUV Light Source Technology for HVM EUV Lithography

2012 ◽  
Vol 2012 ◽  
pp. 1-11 ◽  
Author(s):  
Junichi Fujimoto ◽  
Tsukasa Hori ◽  
Tatsuya Yanagida ◽  
Hakaru Mizoguchi
Keyword(s):  
Light Source ◽  
High Efficiency ◽  
Extreme Ultraviolet ◽  
Laser Energy ◽  
High Volume ◽  
Ionization Rate ◽  
Euv Lithography ◽  
Promising Solution ◽  
Industrial Use ◽  
Debris Mitigation

Since 2002, we have been developing a carbon dioxide (CO2) laser-produced tin (Sn) plasma (LPP) extreme ultraviolet (EUV) light source, which is the most promising solution because of the 13.5 nm wavelength high power (>200 W) light source for high volume manufacturing. EUV lithography is used for its high efficiency, power scalability, and spatial freedom around plasma. We believe that the LPP scheme is the most feasible candidate for the EUV light source for industrial use. We have several engineering data from our test tools, which include 93% Sn ionization rate, 98% Sn debris mitigation by a magnetic field, and 68% CO2 laser energy absorption rate. The way of dispersion of Sn by prepulse laser is key to improve conversion efficiency (CE). We focus on prepulsed laser pulsed duration. When we have optimized pulse duration from nanosecond to picosecond, we have obtained maximum 4.7% CE (CO2 laser to EUV; our previous data was 3.8%) at 2 mJ EUV pulse energy. Based on these data we are developing our first light source as our product: “GL200E.” The latest data and the overview of EUV light source for the industrial EUV lithography are reviewed in this paper.

Enhancing the conversion efficiency of extreme ultraviolet light sources using a 2 µm-wavelength laser

2021 ◽  
Author(s):  
Yun Yuan ◽  
Yan-Yun Ma ◽  
Wenpeng Wang ◽  
Shijia Chen ◽  
Ye Cui ◽  
...  
Keyword(s):  
Energy Conversion ◽  
Emission Spectrum ◽  
Ultraviolet Light ◽  
Conversion Efficiency ◽  
Extreme Ultraviolet ◽  
Light Sources ◽  
Band Emission ◽  
Percentage Points ◽  
Hydrodynamic Code ◽  
Extreme Ultraviolet Light

Abstract In this study, we use the FLASH radiation hydrodynamic code and the FLYCHK atomic code to investigate the energy conversion and spectra associated with laser–Sn target interactions with 1 µm and 2 µm wavelength lasers. We found that the conversion efficiency (CE) reached as much as 3.38% with the 2 µm laser, which is 1.48 percentage points higher than the 1 µm laser (CE = 1.9%). In addition, we analyzed the contribution of dominant ionization states to the emission spectrum for both lasers. We observed that the growths of the out-of-band emission eventually led to a broadening of the spectrum, resulting in a reduction of SP for the 1 µm laser. By contrast, the emission main peaks were all centered near 13.5nm for the 2 µm laser, which is beneficial for efficient emission of light with a 13.5 nm wavelength (relevant for nanolithographic applications).

Multiscale Simulation for Exploring Photo-Chemical Processes to Mitigate the Critical Dimension Variability of Contact Hole in EUV Lithography

2021 ◽  
Author(s):  
Sungwoo Park ◽  
Hyungwoo Lee ◽  
Muyoung Kim ◽  
Taegyeom Kim ◽  
Byunghoon Lee ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Extreme Ultraviolet ◽  
Critical Dimension ◽  
Multiscale Simulation ◽  
Chemical Processes ◽  
Production Yield ◽  
Extreme Ultraviolet Lithography ◽  
Ultraviolet Lithography ◽  
Patterned Surface ◽  
Euv Lithography

In extreme ultraviolet lithography (EUVL), non-uniformity of patterned surface roughness of contact holes results in pattern failures such as bridging- or missing holes, which affect production yield. In this study,...

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