High-efficiency three-way Doherty power amplifier using reconfigurable PD

Frequenz ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Shiwei Zhao ◽  
Jun Guan ◽  
Xiaoqi Zhou ◽  
Yuehang Xu
Keyword(s):  
Power Amplifier ◽  
Power Distribution ◽  
High Efficiency ◽  
Large Range ◽  
Impedance Matching ◽  
Input Power ◽  
Reverse Voltage ◽  
Power Added Efficiency ◽  
Varactor Diodes ◽  
Doherty Power Amplifier

Abstract In this paper, a new reconfigurable power divider (PD) is proposed to improve the efficiency of the three-way Doherty power amplifier (DPA). The conventional λ/4 transmission line is replaced by the proposed reconfigurable PD in the input of peaking amplifier, where the 90° phase shift and impedance matching can be achieved. Furthermore, the output power distribution ratio (PDR) can be continuously adjusted in a large range by adjusting the reverse voltage of the varactor diodes. Therefore, the reconfigurable PD with the best PDR can assign input power to the peaking amplifier. Experiment results show that the maximum measured power added efficiency (PAE) of the proposed three-way DPA is 49%, which is improved by 5% compared with conventional three-way DPA.

scholarly journals Extended Bandwidth and Increased Efficiency Quasi-Doherty Power Amplifier Design With A Revised Approach For Load Modulation

2021 ◽  
Author(s):  
Seyedehmarzieh Rouhani ◽  
Kasra Rouhi ◽  
Adib Abrishamifar ◽  
Majid Tayarani
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
Maximum Output Power ◽  
Input Power ◽  
Maximum Efficiency ◽  
Maximum Output ◽  
Power Added Efficiency ◽  
Active Feedback ◽  
Doherty Power Amplifier ◽  
Load Modulation

This paper presents an approach to power added efficiency (PAE) increase for Quasi-Doherty power amplifier (Q-DPA) design. For this aim, active feedback is utilized instead of a passive quarter wavelength transmission line (TL) usage, which is conventionally used in the DPA schematic. PAE increase can be done by applying an accurate load modulation to the main amplifier (PAmain), especially for technologies in which output impedance of the main power amplifier (Zout,main) considerably varies in both low and high power regions. Because such precise modulation is still based on a modified TL, this approach suffers from the inherent narrowband behavior of that TL. As a consequence, expecting a wideband DPA may not be satisfied in all cases. To deal with this issue, active feedback is used to play a role in reaching PAmain, which is not saturated before, to its maximum efficiency at the highest level of received input power (Pin) in the high power region. Following Zout,main trajectories in power and frequency sweeps simultaneously just by a passive TL are not needed anymore. Still, for the sake of preventing total PAE degradation due to the consummated power by the feedback path’s power amplifier (PAfeedback) should be limited, analytical confinement is provided in this work. A comparison is made between GaAs pHEMT 0.25um MMIC technology-based conventional DPA and the proposed revised approach based-DPA to verify the mentioned approach. The proposed PA shows maximum output power of 33.4 dBm, maximum PAE of 41.6, fractional bandwidth of 11%. The Q-DPA works with a maximum power gain of 24.16.

scholarly journals A Wide-Band High-Gain Doherty Power Amplifier With Class-AB HEMT Amplifiers

2021 ◽  
Author(s):  
Pouya Jahanian ◽  
Azadeh Norouzi Kangarshahi
Keyword(s):  
Power Amplifier ◽  
Transmission Lines ◽  
Average Power ◽  
Wide Band ◽  
High Gain ◽  
Input Power ◽  
Power Ratio ◽  
Class Ab ◽  
Power Added Efficiency ◽  
Doherty Power Amplifier

Abstract In this paper, an attempt has been made to design a Doherty power amplifier (DPA) with high-gain and wide-band. For this purpose, two peak amplifiers are used to improve the performance of the main amplifier. Main and auxiliary amplifiers with the same structure to the class-AB type and by using micro-strip lines in place of input/output and load matching networks, transmission lines and inductors of drain and gate, that minimize the losses in the DPA. The current DPA is implemented with GaN_HEMT_CLF1G0530_100v transistor and Rogers4003 substrate, which for 1GHz frequency in 0.5-1.5GHz bandwidth will be able to be at P-1dB point (this point, input power as 30dBm and output power as 47.98dBm) increase Drain efficiency and Power added efficiency (PAE) to 81.95% and 80.73%, respectively. The DPA helps to expand the back-off region and extend the linearity region, so the Peak to average power ratio (PAPR) will be 5.21dB and the Adjacent channel power ratio (ACPR) as 58.7dBc. A gain of 17.06-17.92dB was also obtained, which is significant compared to the results of similar samples.

Doherty Power Amplifier with Dynamic Power Dividing Network for Enhanced Efficiency

2014 ◽  
Vol 721 ◽  
pp. 560-563
Author(s):  
Wang Xi ◽  
Yu Shi ◽  
Shao Lin Yang ◽  
Jun Li
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Field Effect Transistors ◽  
Input Power ◽  
Oxide Semiconductor ◽  
Design System ◽  
Dynamic Power ◽  
Saturated Output Power ◽  
Doherty Power Amplifier ◽  
Enhance Efficiency

In this paper, we present a high efficiency Doherty power amplifier (PA) employing dynamic power dividing network which automatically adjusts the input power division ratio in accordance with the level of input power to enhance efficiency. Doherty PA circuit parameters of each amplifier are determined by basic performance analysis according to the datasheet. Simulated circuits through Advanced Design System (ADS) exhibit an improvement of 4% at a 6 dB backoff point from its saturated output power (PSAT) than that of a conventional Doherty PA. Implemented Doherty PA using two Freescale MRF6S27015N laterally diffused metal oxide semiconductor (LDMOS) field-effect transistors (FETs) achieves excellent drain efficiency of 46.5% at a 6 dB backoff point from PSAT, which is 2% higher than conventional Doherty PA.

scholarly journals Design of Class F Power Amplifier for 2.4ghz using Third Harmonics

2019 ◽  
Vol 8 (3) ◽  
pp. 7370-7375
Keyword(s):  
Power Amplifier ◽  
Large Scale ◽  
High Efficiency ◽  
Supply Voltage ◽  
Travelling Wave ◽  
Input Power ◽  
Engineering Research ◽  
Power Added Efficiency ◽  
Amplification Process ◽  
Class F

Historically, travelling wave tube amplifier (TWTA) has been a common type of Microwave amplifier used commonly in terrestrial and space application due to their high efficiency and power handling capacity. However due to their bulky nature and also being very expensive, it is difficult to use them commercially in a large scale. Inspired by the advantage such as very less development cost, minimum supply voltage, gradual degradation and numerous commercial applications, Solid State Power Amplifier (SSPA) has been the replacement to vacuum tube Technology. The efficiency of the amplifier is one of the most important task in the microwave engineering research. An important figure of merit, power-added efficiency (PAE), is the main focus. Hence in this paper, class F Power amplifier is designed for 2.4GHz frequency. Class F Amplifier is also called as wave shaping amplifier since the harmonics generated helps the amplification process. The class f PA is biased nearer to the class B amplifier (close cut-off area) so the transistor can move back and forth rapidly to produce the harmonics. The efficiency of class F amplifier depends on how many harmonics are used for the amplification process. Here, the amplification process is performed up to the third harmonics which provides 41.606 dBm output power with 27dBm input power. Also a gain of more than 20.277dBm is achieved when the input given is 27dBm. Several other results like reflection Coefficient and transmission coefficient simulations has also been provided with the power added efficiency (PAE) of 75.402 achieved has also been simulated.

scholarly journals Increased Efficiency of a Current Compensating Load Modulation Based MMIC Doherty Power Amplifier Design In 0.25m GaAs pHEMT Technology

2020 ◽  
Author(s):  
Seyedehmarzieh Rouhani ◽  
Kasra Rouhi ◽  
Adib Abrishamifar ◽  
Majid Tayarani
Keyword(s):  
Power Amplifier ◽  
Second Harmonic ◽  
Maximum Output Power ◽  
Input Power ◽  
Maximum Output ◽  
Modulation Equation ◽  
Gain Compression ◽  
Power Added Efficiency ◽  
Doherty Power Amplifier ◽  
Load Modulation

In this work, a premise is applied to the conventional load modulation equation of Doherty power amplifier (DPA) in 0.25 m GaAs pHEMT technology to compensate output impedance of main amplifier ( Z out,main ) variation, even in low power region. Using this modified modulation leads to the DPAs power added efficiency (PAE) increase in comparison by the case in which the load modulation revision is ignored, which is also designed in this paper. Second harmonic rejection networks are also added to both designs to play their roles as to efficiency increase. By doing so, the revised load modulation based DPA has the maximum PAE of 39.6%, maximum output power ( P out ) of 31.61dBm, at 8 GHz. Simulation results of this DPA in higher harmonics indicate the designed DPA has the minimum second and third harmonics power of -51.7 dBm and -80 dBm, respectively. For the sake of linearity evaluation, it is depicted that 1dB-power gain compression has not occurred in the input power (P in ) range in which the proposed DPA works.

scholarly journals Design and simulate a doherty power amplifier using GaAs technology for telecommunication applications

2019 ◽  
Vol 15 (2) ◽  
pp. 845
Author(s):  
Ehsan Barmala
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Power Amplifiers ◽  
High Efficiency ◽  
Maximum Output Power ◽  
Input Power ◽  
Power Divider ◽  
Maximum Efficiency ◽  
Maximum Output ◽  
Doherty Power Amplifier

<span>In this paper, a Doherty power amplifier was designed and simulated at 2.4 GHz central frequency which has high efficiency. A Doherty power amplifier is a way to increase the efficiency in the power amplifiers. OMMIC ED02AH technology and PHEMT transistors, which is made of gallium arsenide, have been used in this simulation. The Doherty power amplifier unique feature is its simple structure which is consisting of two parallel power amplifiers and transmission lines. In order to integrate the circuit, the Doherty power transmission amplifier lines were implemented using an inductor and capacitive components. Also, the Wilkinson power divider is used on the chip input. To improve the efficiency, the auxiliary amplifier dimensions is selected enlarge and the further input power is allocated it by the power divider. A parallel R-C circuit has been used at the input of transistors to improve their stability. Simulation results show that the Doherty power amplifier has 17.2 dB output power gain, 23 dBm maximum output power, and its output power P<sub>1dB</sub> =22.6dBm at compression point -1 dB, also, its maximum efficiency is 55.5%.</span>

scholarly journals A 6 GHz Integrated High-Efficiency Class-F−1 Power Amplifier in 65 nm CMOS Achieving 47.8% Peak PAE

Electronics ◽  
2021 ◽  
Vol 10 (20) ◽  
pp. 2450
Author(s):  
Syed Muhammad Ammar Ali ◽  
S. M. Rezaul Hasan
Keyword(s):  
Power Amplifier ◽  
Peak Power ◽  
High Efficiency ◽  
Impedance Matching ◽  
Center Frequency ◽  
Dual Purpose ◽  
Power Added Efficiency ◽  
Harmonic Control ◽  
Saturated Output Power ◽  
Class F

This paper reports a “single-transistor” Class-F−1 power amplifier (PA) in 65 nm CMOS, which operates at the microwave center frequency of 6 GHz. The PA is loaded with a Class-F−1 harmonic control network, employing a new “parasitic-aware” topology deduced using a novel iterative algorithm. A dual-purpose output matching network is designed, which not only serves the purpose of output impedance matching, but also reinforces the harmonic control of the Class-F−1 harmonic network. This proposed PA yields a peak power-added efficiency (PAE) of 47.8%, which is one of the highest when compared to previously reported integrated microwave/millimeter-wave PAs in CMOS and SiGe technologies. The amplifier shows a saturated output power of 14.4 dBm along with an overall gain of 13.8 dB.

Sign in / Sign up

Export Citation Format

Share Document