FEATURES STUDIES OF TRANSITION LAYERS IN SEMICONDUCTOR HETEROSYSTEMS

2021 ◽  
Vol 56 ◽  
pp. 108-114
Author(s):  
L. V. Shekhovtsov ◽  
Keyword(s):  
Transition Layer ◽  
Annealing Temperature ◽  
Spectral Characteristics ◽  
Schottky Contact ◽  
Charge Carriers ◽  
Point Change ◽  
Transition Layers ◽  
Equilibrium Charge ◽  
Significant Characteristic ◽  
Semiconductor Contact

Studies of spectral characteristics in Schottky's contact specimens showed that photemf generated by mono­chromatic light, according to the formation mechanism, has a predominantly lateral nature, that is, in a hetero­system there are at least two areas separated by a potential barrier along the interface, with different conductivity levels. The feature of the photoemf spectral characteristics is a variations its appearance when changing the thermal annealing temperature of the studied heterosystems. A significant characteristic and a small amplitude of the characteristic indicates the formation of a transition layer, relatively homogeneous and with insignificant, compared with the volume of GaAs, the doping concentration. If the spectral characteristic has one maximum and amplitude, which several times exceeds the amplitude of a significant characteristic, which means the formation of a transition layer in the Schottky contact depletion area with high conductivity, compared with a quasine-neutral region of a semiconductor. The distribution of lateral photoemf along the sample also has a significant character. In order to obtain the correct results relative to the heterosystem transition layer, it is necessary to measure spectral acute characteristics at a distance from the point change sign of the emf that several times the diffusion length of non-equilibrium charge carriers in GaAs. The problem of the formation of a metal-semiconductor contact and other heterosystems accompanied by the occurrence of heterogeneous transition layers, always paid attention. The use of the proposed photovoltaic method allows to establish the degree of homogeneity of semiconductor layers, components of the structure and predict the redistribution of current density flowing through the physical scope of the device.

DIAGNOSIS OF SEMICONDUCTOR HETEROSYSTEMS USING THE PHOTOVOLTAIC METHOD

2021 ◽  
Vol 56 ◽  
pp. 129-133
Author(s):  
L. V. Shekhovtsov ◽  
Keyword(s):  
Potential Barrier ◽  
Transition Layer ◽  
Small Amplitude ◽  
Diagnostic Method ◽  
Photovoltaic Effect ◽  
Nitrogen Concentration ◽  
Spectral Characteristics ◽  
Schottky Contact ◽  
Semiconductor Layer ◽  
Significant Characteristic

The diagnostic method is as follows: the lateral photo-EMF spectral characteristics are measured, generated in the structure (or device) when illuminated by wavelength light with a near the edge of the basic semiconductor layer. For illustrations of efficiency method the given part of the measurement results for Schottky contact samples with a nitrogen concentration of 5% and a thermal annealing temperature of 900 and 950°C. It has been found that a significant character and a small amplitude of such a characteristic indicates qualitative at a homogeneity and the necessary magnitude of the potential barrier (or barriers), that it is necessary to form to make Schottky contact or other structure. A significant characteristic and a small amplitude of such a characteristic indicates a qualitative one-line and the required value of a potential barrier (or barriers) that must be formed for the manufacture of a semiconductor structure or device. If the spectral characteristic has one maximum and amplitude that is many times higher than the amplitude of a significant characteristic, then this indicates a formed transition layer between components of heterosystems with high, compared with a quasine-power region of semiconductor, conductivity. The presence of such a layer increases the probability breaks down of the microelectronic device. Investigation of the distribution of lateral photours along the metal semiconductor interface compliant interpretation of spectral characteristics features. The linear significant form of distribution of EMF confirms the presence of a transition layer with a lower doping level compared with GaAs. An important feature of the diagnostic method is its non-destructive character, as well as the possibility of applying to semiconductor or devices based on them, in which the photovoltaic effect may occur.

Parameterization of Eddy Fluxes near Oceanic Boundaries

2008 ◽  
Vol 21 (12) ◽  
pp. 2770-2789 ◽  
Author(s):  
Raffaele Ferrari ◽  
James C. McWilliams ◽  
Vittorio M. Canuto ◽  
Mikhail Dubovikov
Keyword(s):  
Boundary Layer ◽  
Transition Layer ◽  
General Circulation ◽  
Mesoscale Eddies ◽  
Turbulent Boundary Layers ◽  
Mesoscale Variability ◽  
Transition Layers ◽  
Boundary Layer Turbulence ◽  
Dynamical Coupling ◽  
Eddy Fluxes

Abstract In the stably stratified interior of the ocean, mesoscale eddies transport materials by quasi-adiabatic isopycnal stirring. Resolving or parameterizing these effects is important for modeling the oceanic general circulation and climate. Near the bottom and near the surface, however, microscale boundary layer turbulence overcomes the adiabatic, isopycnal constraints for the mesoscale transport. In this paper a formalism is presented for representing this transition from adiabatic, isopycnally oriented mesoscale fluxes in the interior to the diabatic, along-boundary mesoscale fluxes near the boundaries. A simple parameterization form is proposed that illustrates its consequences in an idealized flow. The transition is not confined to the turbulent boundary layers, but extends into the partially diabatic transition layers on their interiorward edge. A transition layer occurs because of the mesoscale variability in the boundary layer and the associated mesoscale–microscale dynamical coupling.

Reflection of plane elastic waves from transition layers with arbitrary varration of velocity and density

1966 ◽  
Vol 56 (3) ◽  
pp. 633-642 ◽  
Author(s):  
Ravindra N. Gupta
Keyword(s):  
Transition Layer ◽  
Elastic Waves ◽  
Numerical Results ◽  
Elastic Parameters ◽  
Transition Layers

abstract The problem of reflection of plane elastic waves is generalized numerically to an arbitrary variation, with depth, of the elastic parameters inside a transition layer between two homogeneous half-spaces. Numerical results are given for some cases of interest.

scholarly journals Temperature Dependence of Hall Mobility AndCarrier Concentration of pb0.55S0.45 Films

2009 ◽  
Vol 6 (1) ◽  
pp. 129-134
Author(s):  
Baghdad Science Journal
Keyword(s):  
Hall Mobility ◽  
Room Temperature ◽  
Annealing Temperature ◽  
High Vacuum ◽  
Life Time ◽  
Mean Free Path ◽  
Charge Carriers ◽  
Evaporation Technique ◽  
Carrier Life Time ◽  
Type Conduction

Measurements of Hall effect properties at different of annealing temperature have been made on polycrystalline Pb0.55S0.45 films were prepared at room temperature by thermal evaporation technique under high vacuum 4*10-5 torr . The thickness of the film was 2?m .The carrier concentration (n) was observed to decrease with increasing the annealing temperature. The Hall measurements showed that the charge carriers are electrons (i.e n-type conduction). From the observed dependence on the temperature, it is found that the Hall mobility (µH), drift velocity ( d) carrier life time ( ), mean free path (?) were increased with increasing annealing temperature

CORONENE ORGANIC FILMS: OPTICAL AND SPECTRAL CHARACTERISTICS UNDER ANNEALING TEMPERATURE INFLUENCES

2021 ◽  
pp. 2150081
Author(s):  
ERMAN ERDOGAN
Keyword(s):  
Refractive Index ◽  
Annealing Temperature ◽  
Film Growth ◽  
Low Cost ◽  
Spectral Characteristics ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Optical Bandgap ◽  
Dielectric Constants ◽  
Optical Parameters

In this study, spin coating, which is a chemical film layer thin film deposition method, was used for coronene films that were grown on Si substrates annealed at 325, 350 and 375[Formula: see text]K to examine the impacts on the optical properties of films. This method allows for easy control of the deposition parameters such as concentration, temperature and time as well as enables the film growth at low cost. Optical (UV–Vis) spectral measurements in the wavelength range from 200[Formula: see text]nm to 800[Formula: see text]nm were used to extract the bandgap information and to calculate various optical parameters of the spin-coated coronene films. The electronic transitions on the absorption of photons of suitable energy are of indirect allowed type. The corresponding optical bandgap ([Formula: see text]) was determined. Complex dielectric constants, dissipation factor, optical and electrical conductances and refractive index of coronene films were analyzed as a function of temperature. As the film annealing temperature was increased, the dielectric constants and the refractive index values increased, whereas the optical bandgap and electrical and optical conductivity values decreased.

Morphology dependent optical properties of ZnO/SiNWs nanocomposites

MRS Advances ◽  
2017 ◽  
Vol 2 (58-59) ◽  
pp. 3667-3672
Author(s):  
Aliaksandr Sharstniou ◽  
Stanislau Niauzorau ◽  
Eugene Chubenko ◽  
Bruno P. Azeredo ◽  
Vitaly Bondarenko
Keyword(s):  
Wavelength Range ◽  
Silicon Nanowires ◽  
Annealing Temperature ◽  
Charge Carriers ◽  
Ambient Atmosphere ◽  
Transparent Conductive Electrode ◽  
Heterojunction Solar Cells ◽  
Specular Reflectance ◽  
Shell Nanostructures ◽  
Metal Assisted Chemical Etching

ABSTRACT Zinc oxide/silicon nanowires (ZnO/SiNWs) nanocomposites is a promising material for heterojunction solar cells. They combine the low-reflectivity of SiNWs, where photogenerated charge carriers are produced and harvested, and the high transparency of ZnO, which serves as a functional transparent conductive electrode. In this paper, we present a study of the anti-reflective properties of ZnO/SiNWs core-shell nanostructures. SiNWs were fabricated by a two-step metal-assisted chemical etching and coated with ZnO by electrochemical deposition. Particularly, the change in the specular reflectance of ZnO/SiNWs nanocomposites as a function of thermal annealing temperature under ambient atmosphere is investigated. First, it was shown that the reflectance in the wavelength range of 400-1000 nm of as-synthesized ZnO/SiNWs nanocomposites increases when compared to the bare SiNWs formed from Si wafers with resistivity of 0.3 and 12 Ω∙cm by an 0.51 % and 0.47 %, respectively. Second, it was found that annealed ZnO/SiNWs had a 0.26 % and 0.17 % lower reflectance in the wavelength range of 400-1000 nm than as-synthesized ZnO/SiNWs and yet higher than bare SiNWs. Potential causes such results are discussed in the context of existing literature.

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