Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector

MRS Advances ◽  
2016 ◽  
Vol 1 (16) ◽  
pp. 1099-1104 ◽  
Author(s):  
Z.C. Liu ◽  
F.N. Li ◽  
W. Wang ◽  
J.W. Zhang ◽  
F. Lin ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Layer ◽  
Three Dimensional ◽  
Electrode Structure ◽  
Tungsten Electrodes ◽  
High Pressure High Temperature ◽  
Diamond Substrate ◽  
Single Crystal Diamond ◽  
New Type ◽  
Different Depths

AbstractThe performance of new type three dimensional buried-in electrode structure ultraviolet photodetector fabricated on single crystal diamond epitaxial layer was investigated. The epitaxial layer was grown on high-pressure-high-temperature Ib-type diamond substrate. Then the buried-in electrodes with different depths were formed by oxygen plasma reactive ion etching method and radio frequency magnetron sputtering technique on this diamond layer. Compared with that of traditional planar electrode photodetector, the responsivity of buried-in electrode photodetector shows higher value, which reaches the highest when the electrode depth is 100 nm.

scholarly journals Reducing Threading Dislocations of Single-Crystal Diamond via In Situ Tungsten Incorporation

Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 444
Author(s):  
Ruozheng Wang ◽  
Fang Lin ◽  
Gang Niu ◽  
Jianing Su ◽  
Xiuliang Yan ◽  
...  
Keyword(s):  
Single Crystal ◽  
High Performance ◽  
Crystal Quality ◽  
Diamond Growth ◽  
Sem Images ◽  
High Pressure High Temperature ◽  
Diamond Substrate ◽  
Single Crystal Diamond

A lower dislocation density substrate is essential for realizing high performance in single-crystal diamond electronic devices. The in-situ tungsten-incorporated homoepitaxial diamond by introducing tungsten hexacarbonyl has been proposed. A 3 × 3 × 0.5 mm3 high-pressure, high-temperature (001) diamond substrate was cut into four pieces with controlled experiments. The deposition of tungsten-incorporated diamond changed the atomic arrangement of the original diamond defects so that the propagation of internal dislocations could be inhibited. The SEM images showed that the etching pits density was significantly decreased from 2.8 × 105 cm−2 to 2.5 × 103 cm−2. The reduction of XRD and Raman spectroscopy FWHM proved that the double-layer tungsten-incorporated diamond has a significant effect on improving the crystal quality of diamond bulk. These results show the evident impact of in situ tungsten-incorporated growth on improving crystal quality and inhibiting the dislocations propagation of homoepitaxial diamond, which is of importance for high-quality diamond growth.

scholarly journals Fabrication and electrical characterization of three-dimensional graphitic microchannels in single crystal diamond

2012 ◽  
Vol 14 (5) ◽  
pp. 053011 ◽  
Author(s):  
F Picollo ◽  
D Gatto Monticone ◽  
P Olivero ◽  
B A Fairchild ◽  
S Rubanov ◽  
...  
Keyword(s):  
Single Crystal ◽  
Three Dimensional ◽  
Electrical Characterization ◽  
Single Crystal Diamond

scholarly journals Surface Morphology and Microstructure Evolution of Single Crystal Diamond during Different Homoepitaxial Growth Stages

Materials ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 5964
Author(s):  
Guoqing Shao ◽  
Juan Wang ◽  
Shumiao Zhang ◽  
Yanfeng Wang ◽  
Wei Wang ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Single Crystal ◽  
Cross Section ◽  
Growth Model ◽  
Diamond Growth ◽  
Step Flow ◽  
Homoepitaxial Growth ◽  
Diamond Substrate ◽  
Single Crystal Diamond ◽  
Step Flow Growth

Homoepitaxial growth of step-flow single crystal diamond was performed by microwave plasma chemical vapor deposition system on high-pressure high-temperature diamond substrate. A coarse surface morphology with isolated particles was firstly deposited on diamond substrate as an interlayer under hillock growth model. Then, the growth model was changed to step-flow growth model for growing step-flow single crystal diamond layer on this hillock interlayer. Furthermore, the surface morphology evolution, cross-section and surface microstructure, and crystal quality of grown diamond were evaluated by scanning electron microscopy, high-resolution transmission electron microcopy, and Raman and photoluminescence spectroscopy. It was found that the surface morphology varied with deposition time under step-flow growth parameters. The cross-section topography exhibited obvious inhomogeneity in crystal structure. Additionally, the diamond growth mechanism from the microscopic point of view was revealed to illustrate the morphological and structural evolution.

scholarly journals 708 Atomic-scale flattening method for single-crystal diamond substrate

2014 ◽  
Vol 2014.67 (0) ◽  
pp. _708-1_-_708-3_
Author(s):  
Shin NAGAE ◽  
Yusuke ARAO ◽  
Akihisa KUBOTA ◽  
Mutsumi TOUGE ◽  
Shinichi SHIKATA ◽  
...  
Keyword(s):  
Single Crystal ◽  
Atomic Scale ◽  
Diamond Substrate ◽  
Single Crystal Diamond

scholarly journals Damage-free highly efficient plasma-assisted polishing of a 20-mm square large mosaic single crystal diamond substrate

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Nian Liu ◽  
Kohki Sugawara ◽  
Naoya Yoshitaka ◽  
Hideaki Yamada ◽  
Daisuke Takeuchi ◽  
...  
Keyword(s):  
Single Crystal ◽  
Microwave Plasma ◽  
Removal Rate ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Highly Efficient ◽  
Atomic Force ◽  
Diamond Substrate ◽  
Single Crystal Diamond ◽  
Measurement Results

Abstract Plasma-assisted polishing (PAP) as a damage-free and highly efficient polishing technique has been widely applied to difficult-to-machine wide-gap semiconductor materials such as 4H-SiC (0001) and GaN (0001). In this study, a 20-mm square large mosaic single crystal diamond (SCD) substrate synthesized by microwave plasma chemical vapor deposition (CVD) was polished by PAP. Argon-based plasma containing oxygen was used in PAP to modify the surface of quartz glass polishing plate, and a high material removal rate (MRR) of 13.3 μm/h was obtained. The flatness of SCD polished by PAP measured by an interferometer was 0.5 μm. The surface roughness measured by both scanning white light interferometer (SWLI) (84-μm square) and atomic force microscope (AFM) (5-μm square) was less than 0.5 nm Sq. The micro-Raman spectroscopy measurement results of mosaic SCD substrate processed by PAP showed that residual stress and non-diamond components on the surface after PAP processing were below the detection limit.

Fabrication of hundreds of microns three-dimensional single crystal diamond channel along with high aspect ratio by two-step process

2019 ◽  
Vol 255 ◽  
pp. 126556
Author(s):  
Jiao Fu ◽  
Yanfeng Wang ◽  
Juan Wang ◽  
Zhangcheng Liu ◽  
Ruozheng Wang ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Single Crystal ◽  
High Aspect Ratio ◽  
Three Dimensional ◽  
Step Process ◽  
Single Crystal Diamond

GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy

2009 ◽  
Vol 311 (21) ◽  
pp. 4539-4542 ◽  
Author(s):  
A. Dussaigne ◽  
M. Malinverni ◽  
D. Martin ◽  
A. Castiglia ◽  
N. Grandjean
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Diamond Substrate ◽  
Single Crystal Diamond
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