CMP Challenges for Advanced Technology Nodes

ABSTRACTThe CMP challenges for advanced technology nodes are discussed. Global and local uniformity challenges and their cumulative effects are presented. Uniformity improvements for advanced node integration were achieved through slurry, pad and platen optimization, innovative integration schemes, the reduction of incoming variation and the reduction of cumulative effects. We discuss reduction of typical CMP defect types. Defects resulting from simple mechanisms (foreign material, polish residues) and those resulting from chemical and physical interactions (corrosion, chemical attack, scratches, physical migration) and strategies for control are studied. Defectivity reduction measures include new post-CMP clean chemicals, new slurries and pads and reduction of incoming defectivity. Finally we discuss an observed tradeoff between good defectivity and good uniformity.

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CMP Challenges for Advanced Technology Nodes beyond Si

MRS Advances ◽

10.1557/adv.2017.339 ◽

2017 ◽

Vol 2 (51) ◽

pp. 2891-2902 ◽

Cited By ~ 1

Author(s):

John H Zhang ◽

Stan Tsai ◽

Charan Surisetty ◽

Jody Fronheiser ◽

Shariq Siddiqui ◽

...

Keyword(s):

Liquid Waste ◽

Critical Dimension ◽

Advanced Technology ◽

Chemical Mechanism ◽

High Electron ◽

New Materials ◽

Integration Schemes ◽

Loading Effects ◽

Physical Limitations ◽

Technology Nodes

ABSTRACTAs the scaling of the device dimensions in CMOS devices runs into physical limitations, new materials beyond Si with high electron and hole mobilities such as Ge, SiGe, and III-V materials are introduced. Challenges of CMP for these materials are reviewed in this paper. First we discussed the challenge of the new integration schemes to CMP. Loading effects can result in different growth rates for varying feature sizes, which results in a critical dimension dependent overburden. This makes it more difficult to meet the targets of the CMP process with respect to oxide loss and Ge/SiGe/III-V dishing. Secondly we discuss the challenge for the reduction of the defects during CMP for these new materials. Finally the challenge that is relevant especially for the introduction of III-V materials is studied. During the polishing of III-V materials, toxic gases as well as III-V containing liquid waste will be created. The chemical mechanism of the waste control is discussed.

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Air Bridge Technology: A Comparison of Novel Interconnect Materials and Integration Schemes for Beyond 45 nm

MRS Proceedings ◽

10.1557/proc-766-e5.3 ◽

2003 ◽

Vol 766 ◽

Author(s):

Kenneth Foster ◽

Joost Waeterloos ◽

Don Frye ◽

Steve Froelicher ◽

Mike Mills

Keyword(s):

Dielectric Constants ◽

Advanced Technology ◽

Effective Dielectric Constant ◽

Device Performance ◽

Interlayer Dielectric ◽

Integration Schemes ◽

Stepwise Reduction ◽

Bridge Technology ◽

Integrated Device ◽

Compare And Contrast

AbstractThe electronics industry, in a continual drive for improved integrated device performance, is seeking increasingly lower dielectric constants (k) of the insulators that are used as interlayer dielectric (ILD) for advanced logic interconnects. As the industry continually seeks a stepwise reduction of the “effective” dielectric constant (keff), simple extendibility, leads to the consideration of the highest performance possible, namely air bridge technology. In this paper we will discuss requirements, integration schemes and properties for a novel class of materials that has been developed as part of an advanced technology probe into air bridge architecture. We will compare and contrast these potential technology offerings with other existing dense and porous ILD integration options, and show that the choice is neither trivial nor obvious.

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Use of Second Harmonic and Thermal Effects of Laser Voltage Probing for Better Fault Isolation

ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2016p0514 ◽

2016 ◽

Author(s):

Ramya Yeluri ◽

Ravishankar Thirugnanasambandam ◽

Cameron Wagner ◽

Jonathan Urtecho ◽

Jan M. Neirynck

Keyword(s):

Duty Cycle ◽

Thermal Effects ◽

Second Harmonic ◽

Fault Isolation ◽

Advanced Technology ◽

Temperature Dependent ◽

First Case ◽

Improve Accuracy ◽

Degradation Monitoring ◽

Technology Nodes

Abstract Laser voltage probing (LVP) has been extensively used for fault isolation over the last decade; however fault isolation in practice primarily relies on good-to-bad comparisons. In the case of complex logic failures at advanced technology nodes, understanding the components of the measured data can improve accuracy and speed of fault isolation. This work demonstrates the use of second harmonic and thermal effects of LVP to improve fault isolation with specific examples. In the first case, second harmonic frequency is used to identify duty cycle degradation. Monitoring the relative amplitude of the second harmonic helps identify minute deviations in the duty cycle with a scan over a region, as opposed to collecting multiple high resolution waveforms at each node. This can be used to identify timing degradation such as signal slope variation as well. In the second example, identifying abnormal data at the failing device as temperature dependent effect helps refine the fault isolation further.

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Advanced technology nodes, a foundry perspective

10.1063/1.4766478 ◽

2012 ◽

Author(s):

Jürgen Faul ◽

Jan Hoentschel ◽

Maciej Wiatr ◽

Manfred Horstmann

Keyword(s):

Advanced Technology ◽

Technology Nodes

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Evaluation of Thermal Stability of Spin-Transfer Torque based Magnoresistive Random-Access Memory for Cache Applications in Advanced Technology Nodes

2018 IEEE International Magnetics Conference (INTERMAG) ◽

10.1109/intmag.2018.8508685 ◽

2018 ◽

Author(s):

H. Dixit ◽

S. Agarwal ◽

D. Datta ◽

A. Jacob ◽

D. Shum ◽

...

Keyword(s):

Thermal Stability ◽

Random Access ◽

Random Access Memory ◽

Spin Transfer Torque ◽

Spin Transfer ◽

Advanced Technology ◽

Access Memory ◽

Technology Nodes ◽

Thermal Stability Of

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Electromigration Improvement for Advanced Technology Nodes

ECS Transactions ◽

10.1149/1.3096461 ◽

2019 ◽

Vol 18 (1) ◽

pp. 269-274

Author(s):

Hui-Jung Wu ◽

Wen Wu ◽

Roey Shaviv ◽

Mandy Sriram ◽

Anshu Pradhan ◽

...

Keyword(s):

Advanced Technology ◽

Technology Nodes

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NCFET: Opportunities & challenges for advanced technology nodes

2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop (E3S) ◽

10.1109/e3s.2017.8246180 ◽

2017 ◽

Cited By ~ 1

Author(s):

Zoran Krivokapic ◽

Ahmedullah Aziz ◽

Da Song ◽

Uzma Rana ◽

Rohit Galatage ◽

...

Keyword(s):

Advanced Technology ◽

Technology Nodes

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The Growth of Advanced Packaging: An Overview of the Latest Technology Developments, Applications and Market Trends

International Symposium on Microelectronics ◽

10.4071/isom-2015-tp11 ◽

2015 ◽

Vol 2015 (1) ◽

pp. 000001-000005 ◽

Cited By ~ 2

Author(s):

R. Beica ◽

A. Ivankovic ◽

T. Buisson ◽

S. Kumar ◽

J. Azemar

Keyword(s):

Semiconductor Industry ◽

Cost Effective ◽

Cmos Technology ◽

Advanced Technology ◽

Current Trends ◽

Advanced Packaging ◽

Scaling Process ◽

Market Trends ◽

The Cost ◽

Technology Nodes

The semiconductor industry, for more than five decades, has followed Moore's law and was driven by miniaturization of the transistors, scaling the CMOS technology to smaller and more advanced technology nodes while, at the same time, reducing the cost. The industry is reaching now limitations in continuing this scaling process in cost effective way. While technology nodes continue to be developed and innovative solutions are being proposed, the investment required to bring such technologies to production are significantly increasing. To overcome these limitations, new packaging technologies have been developed, enabling integration of more performing as well as various type of devices within the same package. This paper will provide an overview of current trends seen in the industry across all the packaging platforms (WLCSP1, FanOut2, Embedded Die2, Flip Chip3 and 3DIC4). Challenges, applications, positioning of the different packaging technologies by market segments (from low end to high end applications) and changes of the markets and drivers, growth rates and roadmaps will be presented. Global capacities and demands and the landscape of the packaging industry will be reviewed. Examples of teardowns to illustrate the latest packaging techniques for various devices used in latest products will be included.

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