Electron beam metrology for advanced technology nodes

2019 ◽  
Vol 58 (SD) ◽  
pp. SD0801 ◽  
Author(s):  
Gian Francesco Lorusso ◽  
Naoto Horiguchi ◽  
Jürgen Bömmels ◽  
Christopher J. Wilson ◽  
Geert Van den bosch ◽  
...  
Author(s):  
Jennifer J. Huening ◽  
Prasoon Joshi ◽  
Hyuk Ju Ryu ◽  
Wen-hsien Chuang ◽  
Di Xu ◽  
...  

Abstract On older semiconductor technology, electron-beam probing (EBP) for active voltage contrast and waveform on frontside metal lines was widely utilized. EBP is also being extended to include the well-known optical techniques such as signal mapping imaging (SMI) with the use of a lock-in amplifier in the signal chain and e-beam device perturbation. This paper highlights some of the achievements from an Intel in-house built e-beam tool on current technology nodes. The discussion covers the demonstration of fin and contact resolution on the current technology nodes by EBP and the analysis of the SRAM array with EBP and EBP of metal lines. By utilizing EBP, it has been demonstrated that logic state imaging, SMI, and waveform have significantly improved spatial resolution compared to the current optical fault isolation analogues.


Author(s):  
Ramya Yeluri ◽  
Ravishankar Thirugnanasambandam ◽  
Cameron Wagner ◽  
Jonathan Urtecho ◽  
Jan M. Neirynck

Abstract Laser voltage probing (LVP) has been extensively used for fault isolation over the last decade; however fault isolation in practice primarily relies on good-to-bad comparisons. In the case of complex logic failures at advanced technology nodes, understanding the components of the measured data can improve accuracy and speed of fault isolation. This work demonstrates the use of second harmonic and thermal effects of LVP to improve fault isolation with specific examples. In the first case, second harmonic frequency is used to identify duty cycle degradation. Monitoring the relative amplitude of the second harmonic helps identify minute deviations in the duty cycle with a scan over a region, as opposed to collecting multiple high resolution waveforms at each node. This can be used to identify timing degradation such as signal slope variation as well. In the second example, identifying abnormal data at the failing device as temperature dependent effect helps refine the fault isolation further.


Author(s):  
P. Larré ◽  
H. Tupin ◽  
C. Charles ◽  
R.H. Newton ◽  
A. Reverdy

Abstract As technology nodes continue to shrink, resistive opens have become increasingly difficult to detect using conventional methods such as AVC and PVC. The failure isolation method, Electron Beam Absorbed Current (EBAC) Imaging has recently become the preferred method in failure analysis labs for fast and highly accurate detection of resistive opens and shorts on a number of structures. This paper presents a case study using a two nanoprobe EBAC technique on a 28nm node test structure. This technique pinpointed the fail and allowed direct TEM lamella.


2012 ◽  
Author(s):  
Jürgen Faul ◽  
Jan Hoentschel ◽  
Maciej Wiatr ◽  
Manfred Horstmann

2019 ◽  
Vol 18 (1) ◽  
pp. 269-274
Author(s):  
Hui-Jung Wu ◽  
Wen Wu ◽  
Roey Shaviv ◽  
Mandy Sriram ◽  
Anshu Pradhan ◽  
...  

2015 ◽  
Vol 2015 (1) ◽  
pp. 000001-000005 ◽  
Author(s):  
R. Beica ◽  
A. Ivankovic ◽  
T. Buisson ◽  
S. Kumar ◽  
J. Azemar

The semiconductor industry, for more than five decades, has followed Moore's law and was driven by miniaturization of the transistors, scaling the CMOS technology to smaller and more advanced technology nodes while, at the same time, reducing the cost. The industry is reaching now limitations in continuing this scaling process in cost effective way. While technology nodes continue to be developed and innovative solutions are being proposed, the investment required to bring such technologies to production are significantly increasing. To overcome these limitations, new packaging technologies have been developed, enabling integration of more performing as well as various type of devices within the same package. This paper will provide an overview of current trends seen in the industry across all the packaging platforms (WLCSP1, FanOut2, Embedded Die2, Flip Chip3 and 3DIC4). Challenges, applications, positioning of the different packaging technologies by market segments (from low end to high end applications) and changes of the markets and drivers, growth rates and roadmaps will be presented. Global capacities and demands and the landscape of the packaging industry will be reviewed. Examples of teardowns to illustrate the latest packaging techniques for various devices used in latest products will be included.


2015 ◽  
Vol 62 (6) ◽  
pp. 2585-2591 ◽  
Author(s):  
B. L. Bhuva ◽  
N. Tam ◽  
L. W. Massengill ◽  
D. Ball ◽  
I. Chatterjee ◽  
...  

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