scholarly journals Energy Dispersive X-ray Diffraction (EDXRD) of Li1.1V3O8 Electrochemical Cell

MRS Advances ◽  
2017 ◽  
Vol 2 (7) ◽  
pp. 401-406 ◽  
Author(s):  
Qing Zhang ◽  
Andrea M. Bruck ◽  
David C. Bock ◽  
Jing Li ◽  
Eric A. Stach ◽  
...  

ABSTRACTIn this study, we conducted the first energy dispersive x-ray diffraction (EDXRD) experiments on Li/Li1.1V3O8 coin cells discharged to different lithiation levels in order to investigate the phase transitions upon electrochemical reduction. The phase transformation from layered Li-poor α to Li-rich α to defect rock-salt β phase was confirmed with cells of different lithiation stages. No spatial localization of phase formation was observed throughout the cathodes under the conditions of this measurement.

2008 ◽  
Vol 403 ◽  
pp. 27-30
Author(s):  
S. Chockalingam ◽  
J.P. Kelly ◽  
V.R.W. Amarakoon ◽  
James R. Varner

Microwave sintered Si3N4-MgO system that contains 2, 4 and 10 wt% of ZrO2 as secondary particulates were investigated with respect to phase transformation and microstructure development. The experimental results of microwave sintered samples were compared with conventional methods. Complete α to β phase transformation was observed in the case of microwave sintered samples due to the volumetric nature of microwave heating. High temperature X-ray diffraction (HTXRD) analysis was performed to study in-situ the oxidation behavior of Si3N4 specimens. Si3N4 specimens with 10 wt % ZrO2 were exposed to air at temperature between 25°C and 900°C for up to 24 hours. Microwave sintered sample were structurally stable in air 25°C and 900°C for up to 24 hours of testing.


2015 ◽  
Vol 365 ◽  
pp. 55-62 ◽  
Author(s):  
Marián Vlček ◽  
František Lukáč ◽  
Martin Vlach ◽  
Ivan Procházka ◽  
Stefan Wagner ◽  
...  

A Pd-H system is a model system suitable for studying interactions of hydrogen with metals. In the present work, we studied hydrogen-induced buckling of thin Pd films deposited on various substrates with different bonding strengths (sapphire, glimmer) and also the effect of deposition temperature. Lattice expansion and phase transitions were investigated by X-ray diffraction of synchrotron radiation. The influence of the substrate and microstructure of the film on the buckling process and phase transformation to palladium hydride are discussed.


2003 ◽  
Vol 784 ◽  
Author(s):  
Yun-Mo Sung ◽  
Woo-Chul Kwak ◽  
Se-Yon Jung ◽  
Seung-Joon Hwang

ABSTRACTPt/Ti/SiO2/Si substrates seeded by SBT nanoparticles (∼60–80 nm) were used to enhance the phase formation kinetics of Sr0.7Bi2.4Ta2O9 (SBT) thin films. The volume fractions of Aurivillius phase formation obtained through quantitative x-ray diffraction (Q-XRD) analyses showed highly enhanced kinetics in seeded SBT thin films. The Avrami exponents were determined as ∼1.4 and ∼0.9 for unseeded and seeded SBT films, respectively, which reveals different nucleation modes. By using Arrhenius–type plots the activation energy values for the phase transformation of unseeded and seeded SBT thin films were determined to be ∼264 and ∼168 kJ/mol, respectively. This gives a key reason to the enhanced kinetics in seeded films. Microstructural analyses on unseeded SBT thin films showed formation of randomly oriented needle-like crystals, while those on seeded ones showed formation of domains comprised of directionally grown worm-like crystals.


2012 ◽  
Vol 626 ◽  
pp. 913-917
Author(s):  
W.S. Yeo ◽  
Z. Nur Amirah ◽  
H.S.C. Metselaar ◽  
T.H. Ong

The allotropic phase transformation of cobalt powder prepared by high-energy ball milling was investigated as a function of milling time. Measurement of crystallite size and micro-strain in the powder systems milled for different times were conducted by X-ray diffractometry. The X-ray diffraction (XRD) peaks were analyzed using the Pearson VII profile function in conjunction with Rietveld method. X-ray diffraction line broadening revealed that allotropic transformation between face-centred-cubic phase (fcc) and hexagonal close-packed phase (hcp) in cobalt is grain size dependent and also on the accumulation of structure defects. The results showed that the phase formation of cobalt depends on the mill intensity that influences of both the grain size and the accumulation of structure defects. However, this theory alone is not adequate to explain the effects in this work. It was found that the total surface energy (Ω) theory satisfactorily explains the phase transformation behavior of cobalt. The smaller value of surface energy (Ω) of the fcc crystal than the hcp phase when size decreases may alter the qualitative aspects of the phase formation.


Author(s):  
Anna Makal

A sequence of two discontinuous phase transitions, occurring just above 125 K and 148 K, has been observed for a ferrocenyl–acetylide–gold(I) complex with triethylphosphine, structure (1), by means of a multi-temperature single-crystal X-ray diffraction technique. Three distinct phases have been identified. The high-temperature α and low-temperature γ phases share the same space group Pbca, whereas the intermediate β phase is in the Pb21 a subgroup of Pbca. In all phases molecules of (1) form well defined double layers, with PEt3 groups interlocking in planes perpendicular to c. On the molecular level, both phase transitions involve almost uniquely a conformational change of triethylphosphine: a gear-like rotation around the P—Au axis and concerted flips of the ethyl moieties. The mechanism of these transitions may be imagined as initiated by a rotation of a single PEt3 group in a double layer (a single gear movement), followed by adjacent phosphines adjusting their conformations as a result of steric strain. The structural changes underlying phase transitions are sequential, occurring layer-wise, the γ→β transition involving approximately every other layer in the crystal lattice, the β→α yielding a total conformation change. The sequence of phase transitions results in a noticeable contraction of the crystal cell volume.


1998 ◽  
Vol 514 ◽  
Author(s):  
Ronnen Roy ◽  
Cryil Cabral ◽  
Christian Lavoie ◽  
Jean Jordan-Sweet ◽  
R. Viswanathan ◽  
...  

ABSTRACTThe C54 phase formation process of titanium silicide was studied after selective chemical vapor despostion (CVD) onto very small silicon structures, to ascertain the efficacy of CVD to form low resistance contacts in sub-quarter micron technology. Because the selective CVD process forms silicide on any exposed silicon in a CMOS device, the process was studied on both polysilicon and Si (100) chips. The structures consisted of arrays of about 106 identical lines, 0.1 2.0 μm in width, depending on the chip. The CVD process employed TiCl4 and SiH4 for the most part as process gases and the depostion temperature ranged from 730–825°C. X-ray diffraction (XRD) was used to document the amount of C54 phase present after deposition. In some cases samples were annealed after deposition and the phase transformation behavior studied by in-situ XRD. The latter technique employed a synchrotron radiation source providng for rapid XRD spectra collection, so that the C49-C54 phase transformation could be examined with great precision in real time during rapid thermal annealing. The results of CVD depositions were compared to titanium silicide formed by sputter deposition of Ti on identical silicon chips, followed by a typical salicide protocol. Although the phase formation is affected by both film thickness and substrate temperature during CVD, the general result is that the C54 formation is more facile using the CVD process, especially for the smallest line dimensions. The findings are discussed with respect to nucleation processes occurring during growth and post-deposition thermal processing.


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