SiO2 and TiO2 Sol-Gel Blends with Tunable Optical and Electronic Properties

MRS Advances ◽  
2019 ◽  
Vol 4 (11-12) ◽  
pp. 689-695
Author(s):  
Stephanie Arouh ◽  
Roland Himmelhuber ◽  
Robert A. Norwood

Sol-gel blends are created using a combination of a high refractive index (n∼2.4) TiO2 based sol-gel and a low refractive index (n∼1.5) SiO2 based sol-gel. The blends are prepared with different ratios of sol-gels and films are created using the spin coating method on silicon and ITO-on-glass substrates. The film thickness, refractive index, and dielectric constants of the resulting films are measured using profilometry, prism coupling, and LCR measurements, respectively. Results show that including more SiO2 based sol-gel in the initial mixture creates thicker films ranging from 1-7 μm, but results in lower refractive index and lower dielectric constants. This is consistent with expectations due to SiO2 having a lower refractive index and dielectric constant than titania over a range of wavelengths andfrequencies. The ability to fine tune the properties is explored.

2020 ◽  
pp. 2050044
Author(s):  
SAHAR MORADI ◽  
HASSAN SEDGHI

Nanostructured Fe:SnO2 thin films were deposited on glass substrates through sol–gel spin coating method. Films were synthesized with different iron quantities including 0%, 4%, 8% and 12% (wt.%). The effects of Fe concentration on optical properties of films were investigated by spectroscopic ellipsometry (SE) technique. SE measured ([Formula: see text]) parameters for films in the wavelength range between 300[Formula: see text]nm to 800[Formula: see text]nm. Optical properties including the refractive index, extinction coefficient, transmittance, dielectric constants and optical conductivity were determined by fitting the SE measured ([Formula: see text]) parameters and data obtained from the optical model-based analysis. Results showed that the transmittance values increase by increment of Fe concentration from 0% to 12%. The bandgap energy ([Formula: see text] of prepared thin films was also calculated. [Formula: see text] values were between 3.44 and 3.58[Formula: see text]eV. Dispersion parameters including the high frequency dielectric constant ([Formula: see text] and the ratio of free carrier concentration to effective mass (N/m[Formula: see text] were then obtained for the prepared films.


Sensors ◽  
2021 ◽  
Vol 21 (22) ◽  
pp. 7452
Author(s):  
Muhammad A. Butt ◽  
Andrzej Kaźmierczak ◽  
Cuma Tyszkiewicz ◽  
Paweł Karasiński ◽  
Ryszard Piramidowicz

In this paper, a novel and cost-effective photonic platform based on silica–titania material is discussed. The silica–titania thin films were grown utilizing the sol–gel dip-coating method and characterized with the help of the prism-insertion technique. Afterwards, the mode sensitivity analysis of the silica–titania ridge waveguide is investigated via the finite element method. Silica–titania waveguide systems are highly attractive due to their ease of development, low fabrication cost, low propagation losses and operation in both visible and near-infrared wavelength ranges. Finally, a ring resonator (RR) sensor device was modelled for refractive index sensing applications, offering a sensitivity of 230 nm/RIU, a figure of merit (FOM) of 418.2 RIU−1, and Q-factor of 2247.5 at the improved geometric parameters. We believe that the abovementioned integrated photonics platform is highly suitable for high-performance and economically reasonable optical sensing devices.


2008 ◽  
Vol 368-372 ◽  
pp. 1817-1819
Author(s):  
Cui Hua Zhao ◽  
Bo Ping Zhang ◽  
Yong Liu ◽  
Song Jie Li

LixTixNi1-2xO (x =0, 10 and 20 at. %) thin films with 200 nm in thickness were deposited on Pt/Ti/SiO2/Si (100) by a sol-gel spin-coating method. All samples have a uniform microstructure. The grain sizes grew from 100 nm to 300 nm by co-doping Li and Ti. The LiTiNiO thin films consist of NiO, NiTiO3 and Li2NiO2, while the Li-free thin films consist of NiO, NiTiO3 and NiTi0.99O3. The dielectric properties of the LiTiNiO thin films improved obviously by co-doping Li and Ti, but excess Li increases the amount of Li2NiO2 phase and decreases the dielectric properties. The dielectric constants at 100 Hz for the Li0.1Ti0.1Ni0.8O and Li0.2Ti0.2Ni0.6O thin films are 506 and 388 respectively. Appropriate co-doping contents of Li and Ti are important to obtain a high dielectric property.


2014 ◽  
Vol 6 (5) ◽  
pp. 3115-3121 ◽  
Author(s):  
Yong Ho Kim ◽  
Jun-Young Bae ◽  
Jungho Jin ◽  
Byeong-Soo Bae

2014 ◽  
Vol 903 ◽  
pp. 73-77
Author(s):  
Peh Ly Tat ◽  
Karim bin Deraman ◽  
Rosli Hussin ◽  
Wan Nurulhuda Wan Shamsuri ◽  
Zuhairi Ibrahim

ZnO thin films were deposited on the glass substrates via the sol-gel dip coating method. The films were annealed at various temperatures ranging from 350 °C to 550 °C. X-ray diffraction (XRD), and atomic force microscopy (AFM) were used to investigate the effect of annealing temperature on the structural and morphology properties of the films. The as grown films exhibited amorphous pattern while annealed films were polycrystalline structure with (002) preferential growth along c-axis orientation. The AFM micrographs revealed that the RMS roughness of the films increased as the annealing temperature increased. The grain size was ranging from 32.1 nm to 176.0 nm as the annealing temperature increased from 350 °C to 450 °C and decreased to 56.1 nm for 550 °C.


2015 ◽  
Vol 1109 ◽  
pp. 593-597
Author(s):  
M.F. Nasir ◽  
Mohd Hannas ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop

This project has been focused on the electrical and optical properties on the effect of Indium doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different In dopant concentrations at 1 at%, 1.5 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 oC. In doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and UV-Vis-NIR spectrophotometer for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% In doping concentration which is 8.27× 103Ωcm-1The absorption coefficient spectrum obtained from UV-Vis-NIR spectrophotometer measurement shows all films exhibit very low absorption in the visible (400-800nm) and near infrared (NIR) (>800nm) range but exhibit high absorption in the UV range.


RSC Advances ◽  
2016 ◽  
Vol 6 (75) ◽  
pp. 70825-70831 ◽  
Author(s):  
Mei Chen ◽  
Guoyan Zhang ◽  
Xiao Liang ◽  
Wanshu Zhang ◽  
Le Zhou ◽  
...  

A novel active silicone–oligomers used as chemical intermediates in optical applications were synthesized and one of their derivatives, a transparent film with high refractive index, were presented.


2011 ◽  
Author(s):  
Arnaud Gorin ◽  
Robert Copperwhite ◽  
Salem Elmaghrum ◽  
Colette McDonagh ◽  
Mohamed Oubaha

2010 ◽  
Vol 09 (04) ◽  
pp. 355-358 ◽  
Author(s):  
T. S. SENTHIL ◽  
M. THAMBIDURAI ◽  
N. MUTHUKUMARASAMY ◽  
R. BALASUNDARAPRABHU

TiO2 thin films have been deposited onto well cleaned glass substrates by sol–gel spin coating method. The prepared TiO2 films have been annealed at different temperatures (350°C, 450°C and 550°C). The structural properties of the films have been studied using X-ray diffraction method and High Resolution Transmission Electron Microscope (HRTEM). The as-deposited films have been found to be amorphous in nature. The crystalline quality has been observed to improve with annealing temperature. The annealed TiO2 films have been found to exhibit anatase phase. The optical properties have been studied using transmittance spectrum.


2016 ◽  
Vol 1133 ◽  
pp. 414-418 ◽  
Author(s):  
Nurul Fadzilah Ab Rasid ◽  
Siti Nooraya Mohd Tawil ◽  
Norhidayah Che Ani ◽  
Mohd Zainizan Sahdan

Rare earth Gd-doped ZnO thin films were prepared by a simple sol-gel spin coating method in order to search for a new functional diluted magnetic semiconductor for potential application in spintronics. The thin films were deposited onto glass substrates with zinc acetate dehydrate, monoethanolamine and 2-methoxyethanol as a starting material, stabilizer and solvent, respectively. The dopant percentage was increased up to 8%. Optical investigation showed that the crystallinity of the thin films was changing due to the increase of the Gd concentrations and optical band gap energy (Eg) value was estimated to be around 3.12 ~ 3.28 eV using Tauc's model. The crystallite size determined from XRD spectra and the results was found that the value is in the range of 14.42 ~ 21.98 nm.


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