The structure of thin films sputter deposited from a Ba2 Si2TiO8 ceramic target

1988 ◽  
Vol 3 (1) ◽  
pp. 105-111 ◽  
Author(s):  
H. Yamauchi ◽  
R. J. White ◽  
M. Ayukawa ◽  
T. C. Murray ◽  
J. W. Robinson
Keyword(s):  
Thin Films ◽  
Crystallization Process ◽  
Amorphous Material ◽  
Appreciable Amount ◽  
X Ray Diffraction ◽  
Fixed Temperature ◽  
Ceramic Target ◽  
Sputter Deposited ◽  
Substrate Temperatures ◽  
Kinetics Of

Thin films were sputter deposited from a Fresnoite (Ba2Si2TiO8) ceramic target at substrate temperatures lower than 175°C. The as-deposited thin films were near amorphous with a void network morphology. In spite of the fact that the film compositions were shifted from stoichiometry, x-ray diffraction studies showed that the films crystallized to form randomly oriented Fresnoite grains. The crystallization kinetics were quite sluggish and the resultant activation energy for the crystallization process was 370 ± 30 kJ/mol. Even after annealing for 10 h at 750°C an appreciable amount of amorphous material remained in the thin films. The short-range order in this amorphous material was changed from that of the as-deposited thin films. The overall devitrification kinetics of amorphous Fresnoite thin films at a fixed temperature were represented theoretically by an equation of Tool's type.

Crystallization Kinetics of Rutile Formation from Amorphous Titania Films

1995 ◽  
Vol 398 ◽  
Author(s):  
M.D. Wiggins ◽  
M.C. Nelson ◽  
C.R. Atta
Keyword(s):  
Amorphous Material ◽  
Fused Silica ◽  
Phase Identification ◽  
Type I ◽  
X Ray Diffraction ◽  
Rutile Titania ◽  
Dimensional Growth ◽  
Titania Films ◽  
Sputter Deposited ◽  
Kinetics Of

ABSTRACTTitania films with two types of phase composition were sputter deposited on fused silica substrates: Type (I) amorphous+anatase+rutile and Type (II) amorphous+rutile. These films were subjected to various annealing procedures in air. We studied three relevant transitions: 1) amorphous→crystalline (anatase and rutile) at temperature <800 °C, 2) amorphous→mitile at an temperatures, and 3) anatase→rutile in the 750–800 °C temperature range.X-ray diffraction was used for phase identification and crystallographic orientation. The films had a preferred orientation, with (101) anatase and/or (110) rutile planes parallel to the substrate. The activation energy for the amorphous-to-rutile transformation was 0.3 eV. The anatase-to-rutile transformation occurring at 750 °C was modelled using the Avrami relation, which yielded an exponent of unity.From the results of this study, we propose a model for titania crystallization in which site saturation of rutile and/or anatase nuclei already exists in the as-deposited film. Further crystallization upon annealing occurs by one dimensional growth of these nuclei into the amorphous material. If no anatase seeds exist in the as-deposited material, then no anatase will form upon annealing, indicating again that no new nuclei are formed during annealing. In this manner, highly oriented rutile titania films can be produced at temperature below the bulk anatase-to-rutile transformation temperature (750 °C).

Cross-section TEM observations of amorphous nickel-titanium thin films formed by solid state reaction

1990 ◽  
Vol 48 (4) ◽  
pp. 148-149
Author(s):  
Russell E. Cook
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Amorphous Material ◽  
Depth Profiling ◽  
Nickel Titanium ◽  
X Ray Diffraction ◽  
Plan View ◽  
Titanium Thin Films ◽  
Kinetics Of ◽  
Apparent Conflict

There have been conflicting results concerning solid state amorphizing reactions (SSAR) in thin films consisting of alternating multiple layers of nickel and titanium. Clemens first reported evidence for SSAR in Ni-Ti using X-ray diffraction, Auger depth-profiling, and electrical conductivity measurements. The thickness of the Ni and Ti layers was 200 close-packed atom planes each in those samples in which SSAR was observed, although the reaction did not go to completion. Meng, et al. made plan-view TEM observations of films consisting of 10nm layers of Ni and Ti (about 50 atom planes) which had been vacuum- annealed for five hours at 250°C and 300°C. They observed that an intermetallic compound had formed as a result of the anneal, rather than amorphous material. The present study was initiated to explore the apparent conflict and to examine the kinetics of the SSAR if it occurred.

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

Optical properties of anatase TiO2 films modified by N ion implantation

2012 ◽  
Vol 90 (1) ◽  
pp. 39-43 ◽  
Author(s):  
X. Xiang ◽  
D. Chang ◽  
Y. Jiang ◽  
C.M. Liu ◽  
X.T. Zu
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Atomic Force ◽  
Light Region ◽  
Uv Visible ◽  
Substrate Temperatures

Anatase TiO2 thin films are deposited on K9 glass samples at different substrate temperatures by radio frequency magnetron sputtering. N ion implantation is performed in the as-deposited TiO2 thin films at ion fluences of 5 × 1016, 1 × 1017, and 5 × 1017 ions/cm2. X-ray diffraction, atomic force microscope, X-ray photoelectron spectroscopy (XPS), and UV–visible spectrophotometer are used to characterize the films. With increasing N ion fluences, the absorption edges of anatase TiO2 films shift to longer wavelengths and the absorbance increases in the visible light region. XPS results show that the red shift of TiO2 films is due to the formation of N–Ti–O compounds. As a result, photoactivity is enhanced with increasing N ion fluence.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

In situ X-ray diffraction study of crystallization process of GeSbTe thin films during heat treatment

2005 ◽  
Vol 244 (1-4) ◽  
pp. 281-284 ◽  
Author(s):  
Naohiko Kato ◽  
Ichiro Konomi ◽  
Yoshiki Seno ◽  
Tomoyoshi Motohiro
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Diffraction Study ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
X Ray

A study of barium strontium titanate thin films for use in bypass capacitors

1998 ◽  
Vol 13 (1) ◽  
pp. 197-204 ◽  
Author(s):  
B. A. Baumert ◽  
L-H. Chang ◽  
A. T. Matsuda ◽  
C. J. Tracy ◽  
N. G. Cave ◽  
...  
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Barium Strontium ◽  
Aluminum Metallization ◽  
On Chip ◽  
Lower Temperature ◽  
Kinetics Of

Physical and electrical characterization techniques have been applied to the problem of developing a lower temperature process for spin-on Ba0.7Sr0.3TiO3 thin films and capacitors compatible with on-chip aluminum metallization. The films were prepared by spin-coating from carboxylate precursors and were processed at temperatures between 650 °C and 450 °C. Capacitors annealed at higher temperatures have a dielectric constant (κ) of 382, a C/A of 20 fF/μm2, and a leakage current density of 2 × 10−7 A/cm2 at 3.3 V. Those processed at 450 °C show occasionally promising but inconsistent results, correlated using TEM images with locally variable crystallization into the perovskite phase. The kinetics of the spin-on solution chemical decomposition and crystallization has been investigated through the use of x-ray diffraction (XRD), thermogravimetric analysis (TGA), and Raman spectroscopy.

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