A study of barium strontium titanate thin films for use in bypass capacitors

1998 ◽  
Vol 13 (1) ◽  
pp. 197-204 ◽  
Author(s):  
B. A. Baumert ◽  
L-H. Chang ◽  
A. T. Matsuda ◽  
C. J. Tracy ◽  
N. G. Cave ◽  
...  
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Barium Strontium ◽  
Aluminum Metallization ◽  
On Chip ◽  
Lower Temperature ◽  
Kinetics Of

Physical and electrical characterization techniques have been applied to the problem of developing a lower temperature process for spin-on Ba0.7Sr0.3TiO3 thin films and capacitors compatible with on-chip aluminum metallization. The films were prepared by spin-coating from carboxylate precursors and were processed at temperatures between 650 °C and 450 °C. Capacitors annealed at higher temperatures have a dielectric constant (κ) of 382, a C/A of 20 fF/μm2, and a leakage current density of 2 × 10−7 A/cm2 at 3.3 V. Those processed at 450 °C show occasionally promising but inconsistent results, correlated using TEM images with locally variable crystallization into the perovskite phase. The kinetics of the spin-on solution chemical decomposition and crystallization has been investigated through the use of x-ray diffraction (XRD), thermogravimetric analysis (TGA), and Raman spectroscopy.

Glancing Angle X-Ray Study of Crystallization of Amorphous Ge at the Ge-A1 Interface

1990 ◽  
Vol 202 ◽  
Author(s):  
S. M. Heald ◽  
J. K. D. Jayanetti ◽  
R. C. Budhani
Keyword(s):  
Initial Period ◽  
Time Characteristic ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffusion Limited ◽  
Glancing Angle ◽  
Lower Temperature ◽  
Kinetics Of ◽  
Diffusion Limited Reaction ◽  
Good Agreement

ABSTRACTThe amorphous to crystalline transformation of Ge in Al/Ge thin film couples has been studied using glancing angle EXAFS, x-ray reflectivity and diffraction. It was found that crystallization occurs at a much lower temperature (118-150 °C) than for bulk Ge, and initiates at the Al/Ge interface. X-ray diffraction studies were made at 152 °C to study the kinetics of the reaction. After an initial period we find good agreement with a square root dependence of the time, characteristic of a diffusion limited reaction.

X-ray diffraction analysis for thin films of PbTiO3-La2/3TiO3 prepared by the sol-gel method

1994 ◽  
Vol 9 (8) ◽  
pp. 2133-2137 ◽  
Author(s):  
Hideki Yoshioka
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Diffraction Method ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
X Ray ◽  
Coating Methods ◽  
Diffraction Patterns ◽  
System 1

Thin films in the system (1 - x) PbTiO3−xLa2/3TiO3 were prepared by the sol-gel and dip-coating methods. Phases deposited in the films and the lattice parameters as a function of the composition were investigated by the x-ray diffraction method. The solid solutions with a perovskite structure were formed as a single phase with x up to 0.9. For the composition of x = 1.0, metastable La-Ti-O perovskite phase with a small amount of the impurity phase, La2Ti2O7, was obtained. Simulation of x-ray diffraction patterns based on the defect structure model shows that the structure of the La-Ti-O perovskite phase includes randomly distributed cation vacancies at the A-site, namely (La2/3□1/3)TiO3.

Enhancement of Aurivillius Phase Formation Kinetics in SBT Thin Films using Nanoparticle Seeding

2003 ◽  
Vol 784 ◽  
Author(s):  
Yun-Mo Sung ◽  
Woo-Chul Kwak ◽  
Se-Yon Jung ◽  
Seung-Joon Hwang
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Phase Transformation ◽  
Phase Formation ◽  
X Ray Diffraction ◽  
Aurivillius Phase ◽  
X Ray ◽  
Si Substrates ◽  
Formation Kinetics ◽  
Kinetics Of

ABSTRACTPt/Ti/SiO2/Si substrates seeded by SBT nanoparticles (∼60–80 nm) were used to enhance the phase formation kinetics of Sr0.7Bi2.4Ta2O9 (SBT) thin films. The volume fractions of Aurivillius phase formation obtained through quantitative x-ray diffraction (Q-XRD) analyses showed highly enhanced kinetics in seeded SBT thin films. The Avrami exponents were determined as ∼1.4 and ∼0.9 for unseeded and seeded SBT films, respectively, which reveals different nucleation modes. By using Arrhenius–type plots the activation energy values for the phase transformation of unseeded and seeded SBT thin films were determined to be ∼264 and ∼168 kJ/mol, respectively. This gives a key reason to the enhanced kinetics in seeded films. Microstructural analyses on unseeded SBT thin films showed formation of randomly oriented needle-like crystals, while those on seeded ones showed formation of domains comprised of directionally grown worm-like crystals.

Reaction Process of Al-TiO2-C-Ti-Fe Multiphase System during Combustion Synthesis

2007 ◽  
Vol 336-338 ◽  
pp. 2340-2343 ◽  
Author(s):  
Song He Meng ◽  
Xing Hong Zhang ◽  
Wei Feng Zhang
Keyword(s):  
Intermetallic Compounds ◽  
Xrd Analysis ◽  
Reaction Process ◽  
Multiphase System ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Reaction Characteristics ◽  
Lower Temperature ◽  
Kinetics Of

The reaction process and kinetics of Al-TiO2-C-Ti-Fe system were investigated by differential scanning calorimetry (DSC) analysis, X-ray diffraction (XRD) analysis and scanning electron microscope (SEM). In order to obtain the information of reaction process for complicated system, the reaction characteristics of Al-TiO2, Al-TiO2-C and Al-TiO2-C-Ti systems are explored firstly. The results show that the reaction process varies with temperature in Al-TiO2-C-Ti-Fe system. At the lower temperature, the dominating reaction in Al-TiO2-C-Ti-Fe system is that between Al and Ti, Al and Fe, and so TiAlx, FeAlx, and Ti2Fe intermetallic compounds form. With the temperature increasing, the intermetallic compounds are decomposed. Then the decomposed Ti and Al react with C and TiO2 respectively and the stable TiC, Al2O3 and Fe three phases form in the final product.

In-Situ Characterisation of Precipitation in AI-Cu thin films

1999 ◽  
Vol 562 ◽  
Author(s):  
J. P. Lokker ◽  
A. J. Bottger ◽  
G. C. A. M. Janssen ◽  
S. Radelaar
Keyword(s):  
Thin Films ◽  
Differential Scanning Calorimetry ◽  
Bulk Material ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Enthalpy Changes ◽  
Thin Foils ◽  
Lower Temperature

ABSTRACTThe precipitate formation occurring in Al-Cu thin foils with copper concentrations of either 1.15 at.% or 0.3 at.%, has been studied. In-situ X-ray diffraction analysis and differential scanning calorimetry are applied to determine the phases formed and the enthalpy changes in the same samples. Both X-ray diffraction and differential scanning calorimetry indicate that the precipitation behaviour of thin films (about 500 nm thickness) differs significantly from that of bulk material. In the films studied the precipitation of Al2Cu occurs at a much lower temperature than expected on the basis of the (bulk) phase diagram. Moreover, no intermediate phases are observed prior to Al2Cu precipitation. Also the amount of Cu in solid solution (0.20 at%Cu) observed by electron-probe micro-analysis after slowly cooling from 500°C to room temperature, exceeds the solubility of bulk Al-Cu.

Defects in YBa2Cu3O7−δ Thin Films and Their Influences on Tc

1995 ◽  
Vol 401 ◽  
Author(s):  
Jinhua Ye ◽  
Keikichi Nakamura
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Oxygen Deficiency ◽  
Diffraction Method ◽  
Cation Ordering ◽  
Superconducting Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystallographic Defects ◽  
Kinetics Of

AbstractCrystallographic defects introduced in the YBa2Cu3O7−δ thin films during depositions were studied using X-ray diffraction method, and their influences on superconducting properties were also investigated by examining Tc variation of the as-grown and post-annealed thin films. It was found that there exist several kinds of defects in the as-grown thin films, such as oxygen deficiency, cation disordering, and others like lattice dislocation, stacking faults, etc.. These defects could be relaxed by heat treatment at temperatures ranging from 400 to 900 °C, resulting in Tc enhancement more or less. Quantitative understandings of the relations among annealing temperature, structural relaxation, and Tc improvement has also been reached. The kinetics of the relaxation of the defects in the YBCO films was studied further using a high-temperature X-ray diffractometer. Interesting phenomena have been observed at around 400 °C due to abnormal desorption behavior of oxygen and at higher temperatures relating to cation ordering.

scholarly journals Study of the Layer-Type BST Thin Film with X-ray Diffraction and X-ray Photoelectron Spectroscopy

Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 578
Author(s):  
Agata Lisińska-Czekaj ◽  
Dionizy Czekaj
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Photoelectron Spectroscopy ◽  
Chemical Compositions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Barium Strontium ◽  
Bst Thin Film

In the present paper, results of X-ray photoelectron studies of electroceramic thin films of barium strontium titanate, Ba1−xSrxTiO3 (BST), composition deposited on stainless-steel substrates are presented. The thin films were prepared by the sol-gel method. A spin-coating deposition of BST layers with different chemical compositions was utilized so the layer-type structure of (0-2) connectivity was formed. After the deposition, the thin-film samples were heated in air atmosphere at temperature T = 700 °C for 1 h. The surfaces of BST thin films subjected to thermal treatment were studied by X-ray diffraction. X-ray diffraction measurements confirmed the perovskite-type phase for all grown thin-film samples. The oxidation states of the elements were examined by the X-ray photoelectron spectroscopy method. X-ray photoelectron spectroscopy survey spectra as well as high-resolution spectra (photo-peaks) of the main metallic elements, such as Ti, Ba, and Sr, were compared for the layer-type structures, differing in the deposition sequence of the barium strontium titanate layers constituting the BST thin film.

Composition/structure/property relations of multi-ion-beam reactive sputtered lead lanthanum titanate thin films: Part II. Textured microstructure development

1993 ◽  
Vol 8 (9) ◽  
pp. 2191-2202 ◽  
Author(s):  
G.R. Fox ◽  
S.B. Krupanidhi ◽  
K.L. More
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Perovskite Phase ◽  
Ion Beam ◽  
Cluster Structure ◽  
Zone Model ◽  
Microstructure Development ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lanthanum Titanate

This paper, the second of three parts, presents a detailed analysis of the crystallographic texture observed in lead lanthanum titanate (PLT) thin films deposited by multi-ion-beam reactive sputtering. Since films were deposited at a substrate temperature of 100 °C, they exhibit an amorphous structure that can be described by the structure zone model. The as-deposited microstructure is transformed via crystallization of the perovskite phase and PbO evaporation during postdeposition annealing. Transmission electron microscopy was used to determine that phase pure PLT films develop textured clusters (as large as 700 nm in diameter) consisting of 〈100〉 aligned 10 nm nanocrystals. As excess PbO is added to the PLT film, the textured cluster size decreases until only isolated PLT nanocrystals exist. Below a critical quantity of excess PbO in the as-deposited film (approximately 15 mole%), the textured cluster structure produces a 〈100〉 texture through the film thickness, which generates x-ray diffraction patterns typical of textured microstructures. At high PbO contents, the excess PbO causes the formation of clusters that are smaller than the film thickness, resulting in a polycrystalline-type x-ray diffraction pattern. A qualitative model describing microstructure development is presented.

Effect of Dopants on the Band Structure of Barium Strontium Titanate Thin Films

2005 ◽  
Vol 872 ◽  
Author(s):  
Yuebing Zheng ◽  
Shijie Wang ◽  
Cheng Hon A. Huan
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Band Structure ◽  
Dopant Concentration ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Barium Strontium ◽  
Transmission Electron

AbstractThe effect of dopants on the band structure and crystal structure of Ba0.5Sr0.5TiO3thin films on (100) LaAlO3 substrates has been investigated. The dopants include Ti, Mg and Al. The band-gap energies of the thin films were determined from the transmission spectra measured by UVVIS spectrophotometer and increased with the increase of dopant concentration regardless of the type of dopants. The crystal structure was studied by using transmission electron microscopy, atomic force microscopy, x-ray diffraction and micro-Raman spectroscopy. The relation between band structure and crystal structure was discussed.

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