Growth of highly oriented SnO2 thin films on glass substrate from tetra-n-butyltin by the spray pyrolysis technique

1993 ◽  
Vol 8 (7) ◽  
pp. 1481-1483 ◽  
Author(s):  
I. Yagi ◽  
Y. Hagiwara ◽  
K. Murakami ◽  
S. Kaneko
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Spray Pyrolysis Technique ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Sno2 Thin Films ◽  
Heated Glass ◽  
Scanning Electron

Highly oriented SnO2 thin films have been grown successfully from tetra-n-butyltin on heated glass substrates by a pneumatic spraying system. The effects of film growth rate and substrate temperature on the microstructures of the films were investigated by x-ray diffraction and scanning electron microscopy. The SnO2 films of preferentially oriented (110) crystal plane were grown under the optimum growth conditions.

scholarly journals Theoretical and experimental Investigation of Structural, electronic and optical properties of neodymium doped ZnO

2020 ◽  
Vol 307 ◽  
pp. 01018 ◽  
Author(s):  
Hajar Cherrad ◽  
Mohammed Addou ◽  
Mehdi Hssein ◽  
Khadija Bahedi ◽  
Mohamed Jbilou ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Spray Pyrolysis Technique ◽  
The Self ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Doped Zno ◽  
X Ray Absorption ◽  
Heated Glass ◽  
Scanning Electron

The morphological and cathodoluminescent properties of Nd doped zinc oxide thin films deposited by reactive chemical pulverization spray pyrolysis technique on heated glass substrates at 450 °C are being reported. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and cathodoluminescent (CL) spectroscopy. We have also used the Generalised Gradient Approximation (GGA)-the Self Interaction Corrected (SIC) to determine Electronic structure and x ray absorption.

Growth of Oriented Tin Oxide Thin Films from an Organctin Compound by Spray Pyrolysisxf

1992 ◽  
Vol 271 ◽  
Author(s):  
Isao Yag ◽  
Shoji Kaneko
Keyword(s):  
Electron Microscopy ◽  
Tin Oxide ◽  
Film Growth ◽  
Growth Parameters ◽  
Optimum Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Tin Oxide Films ◽  
Heated Glass ◽  
Scanning Electron

ABSTRACTTin oxide films were grown from di-n-butyltin diacetate on a heated glass substrate by a pneumatic spraying system The effects of various film growth parameters. i.e solvent, solution feed rate, film thickness, and film growth rate on the microstructures of the films were studied by X-ray diffraction and scanning electron microscopy The SnO2 films of the (200) plane were grown by the optimum growth parameters

Influence of Copper Concentration on the Structural and Optical Properties of Chemically Deposited CuSbS2 Thin Films

2016 ◽  
Vol 19 (1) ◽  
pp. 015-019 ◽  
Author(s):  
Jebadurai Joy Jeba Vijila ◽  
Kannusamy Mohanraj ◽  
Sethuramachandran Thanikaikarasan ◽  
Ganesan Sivakumar ◽  
Thaiyan Mahalingam ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Emission ◽  
Secondary Phase ◽  
Diffraction Field ◽  
Spectroscopic Techniques ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Simple Chemical ◽  
Scanning Electron

Thin films of CuSbS2 have been deposited on ultrasonically cleaned glass substrates using a simple chemical bath deposition technique. Prepared films have been characterized using X-ray diffraction, Field Emission Scanning Electron Microscopy and UV-Vis-NIR spectroscopic techniques, respectively. X-ray diffraction analysis revealed that the prepared films possess polycrystalline in nature with orthorhombic CuSbS2 in addition to secondary phase of monoclinic Cu3SbS3 and cubic Cu12Sb4S13 for different copper concentrations. Field Emission Scanning Electron Spectroscopic analysis showed that the prepared films possess spherical shaped grains with irregular shaped clusters. Optical absorption analysis showed that the prepared films possess band gap value in the range between 1.7 and 2.4 eV.

scholarly journals Temperature effect on structural and optical properties of V2O5 thin films prepared by spray pyrolysis technique

2020 ◽  
Vol 307 ◽  
pp. 01033
Author(s):  
Asmaa Mrigal ◽  
Lahocine El Gana ◽  
Mouhamed Addou ◽  
Khadija Bahedi ◽  
Rajae Temsamani ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Energy Gap ◽  
Spray Pyrolysis Technique ◽  
Three Dimensional ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Optical Dielectric Constant

In this work, the effect of substrate temperature on structural and optical properties of V2O5 thin films has been characterized by X-ray diffraction (XRD); SEM and transmission. The films mince has been prepared by Reactive Chemical Spraying technology in Liquid Phase (RCSLP) on glass substrates preheated at (350, 400, 450 and 500 °C). The X-ray diffraction analysis confirms that all layers are polycrystalline, and the preferred orientation of V2O5 is the (001) plane. The morphology of V2O5 thin films are porous nature and their particle’s shape is three-dimensional. The transmittance and absorbance of thin film were measured from which the optical constants (Energy gap, Refractive index, Absorption coefficient, Extinction coefficient and Optical dielectric constant) were determined.

Properties of ZnS Thin Films Prepared by CBD under Different Concentration of Complexing Agent

2012 ◽  
Vol 472-475 ◽  
pp. 1572-1576 ◽  
Author(s):  
Jie Liao ◽  
Hai Fang Zhou ◽  
Shu Ying Cheng
Keyword(s):  
Thin Films ◽  
Zinc Sulfate ◽  
Sodium Citrate ◽  
Energy Gap ◽  
Complexing Agent ◽  
X Ray Diffraction ◽  
Buffer Solution ◽  
X Ray ◽  
Glass Substrates ◽  
Scanning Electron

ZnS thin films were deposited on glass substrates using chemical bath deposition. The zinc sulfate and thiourea were used as precursors along with a stable complexing agent of sodium citrate in ammonia/ammonium chloride (pH=10.5) buffer solution. The ratio of Zn and complexing agent was changed from 6:1 to 1:1 by varying concentrations of the complexing agent. X-ray diffraction (XRD), scanning electron microscope (SEM) and UV-vis spectrophotometer were used to investigate the structure, micrograph and optical characteristics of the ZnS thin films respectively. The concentration of sodium citrate has an effect on the crystalline size and crystallization. For the as-deposited thin films, the values of transmittances and Eg are about 85% and 3.8 eV respectively. However, they are decreased to 75% and 3.4 eV respectively after annealing. In addition, the concentration of the complexing agent has no remarkable influence on both the transmittance and the energy gap. The results show that the ZnS thin films with resistivity of 4.34×104 Ωcm are suitable for optoelectronic applications.

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

X- ray diffraction and dielectric properties of PbSe thin films

2019 ◽  
Vol 15 (34) ◽  
pp. 1-14
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Thermal Activation ◽  
Thermal Evaporation ◽  
Thermal Activation Energy ◽  
Dielectric Constants ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

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