Superconductivity of epitaxially grown α-axis YBCO films on SrTiO3 substrate

1994 ◽  
Vol 9 (7) ◽  
pp. 1625-1632 ◽  
Author(s):  
W. Ito ◽  
S. Mahajan ◽  
Y. Yoshida ◽  
N. Watanabe ◽  
T. Morishita
Keyword(s):  
Oxygen Content ◽  
Raman Spectra ◽  
Ion Beam ◽  
Superconducting Film ◽  
Ybco Films ◽  
Srtio3 Substrate ◽  
Plasma Sputtering ◽  
Hybrid Plasma ◽  
Different Temperatures

The a-axis oriented YBa2Cu3Ox (YBCO) films were epitaxially grown on (100) SrTiO3 substrate by dc-100 MHz hybrid plasma sputtering. The films prepared at different temperatures with and without in situ annealing had different superconductivity, which was improved with the degradation of the crystallinity of the films. The Raman spectra for the films were very similar to each other and to that expected for YBa2Cu3O7, in spite of the different superconductivity. This indicates the importance of the symmetry of the Cu–O chains rather than the oxygen content for the superconductivity. In Rutherford backscattering measurements using a 3.05 MeV He2+ ion beam, an increase of dechanneling due to the barium atoms along the film depth was clearly observed only for the most improved superconducting film. This result suggests that the relief of the strain contained in the film is also important for improving the superconductivity in the case of a-axis oriented YBCO films.

Preparation of a-axis YBa2Cu3Ox epitaxial films using direct current-95 MHz hybrid plasma sputtering

1995 ◽  
Vol 10 (9) ◽  
pp. 2216-2234 ◽  
Author(s):  
Wataru Ito
Keyword(s):  
Substrate Surface ◽  
Tilt Boundary ◽  
Boundary Structure ◽  
Ion Density ◽  
Ybco Films ◽  
Plasma Sputtering ◽  
Grain Boundary Structure ◽  
Transmission Electron ◽  
Hybrid Plasma ◽  
Symmetrical Tilt

The dc-95 MHz hybrid plasma magnetron sputtering has been newly developed for obtaining a-axis oriented YBa2Cu3Ox (YBCO) films with an excellent crystallinity. The crystallinity was found to be the best among the films reported so far: the full width at half maximum value of 0.027°in the rocking curve measurement through the film (200) diffraction peak and Xmin of 2% estimated from the barium signal behind the surface peak in Rutherford backscattering (RBS) measurement using a 1 MeV He+ ion. The success in the excellent crystallinity was explained from the ion acceleration model at the ion sheath formed near the substrate surface considering the high ion density, which was revealed to be a characteristic of hybrid plasma. Almost perfect epitaxial growth was also confirmed by transmission electron microscopy. A characteristic grain boundary structure depending on the substrate was observed for the films on NdGaO3 and SrTiO3 substrates. Twist boundary is dominant for the film on NdGaO3, while symmetrical tilt boundary and basal-plane-faced tilt boundary exclusively exist for the film on SrTiO3. The microstructure of the film on SrTiO3 is very resistive against film relaxation. Strain relief was observed by RBS channeling spectra for the relatively high superconducting films. The results of Raman spectroscopy and RBS oxygen resonant measurements indicated that the oxygen content is not a critical parameter for determining the superconductivity of the a-axis oriented YBCO films, but oxygen ordering in the plane of the Cu-O chain and relief of the film strain are important for the improvement of Tc.

Defect Accumulation and Recovery in Ion-Implanted 6H-SiC

2002 ◽  
Vol 719 ◽  
Author(s):  
W. Jiang ◽  
W. J. Weber ◽  
C. M. Wangxya
Keyword(s):  
Single Crystal ◽  
Ion Beam ◽  
Irradiation Temperature ◽  
Recovery Processes ◽  
Defect Accumulation ◽  
Different Temperatures ◽  
Induced Defects ◽  
Ion Species ◽  
Irradiation Induced Defects

AbstractSingle crystal wafers of <0001>-oriented 6H-SiC were irradiated at different temperatures using a variety of ion species. The disorder on both the Si and C sublattices has been studied in situ using a combination of ion beam analyses in multiaxial channeling geometry. The fraction of the irradiation-induced defects surviving simultaneous recovery processes decreases with decreasing ion mass and with increasing irradiation temperature. Some of the Si and C defects are well aligned with the <0001> axis and the rate of C disordering is higher than that of Si disordering. Three recovery stages in Au2+-irradiated 6H-SiC have been identified.

Preparation of YBa2Cu4O8 thin films from precursors deposited by hybrid plasma sputtering through in situ annealing

1995 ◽  
Vol 153 (3-4) ◽  
pp. 151-157 ◽  
Author(s):  
Y. Yoshida ◽  
J.G. Wen ◽  
N. Watanabe ◽  
N. Koshizuka ◽  
T. Morishita
Keyword(s):  
Thin Films ◽  
Plasma Sputtering ◽  
Hybrid Plasma

Superconducting Yba2Cu3O7-δ Thin Films on Srtio3 and Si Grown In-Situ by Ion Beam Sputtering

1989 ◽  
Vol 169 ◽  
Author(s):  
B.J. Kellett ◽  
J.H. James ◽  
A. Gauzzi ◽  
M. Affronte ◽  
D. Pavuna
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Ion Beam ◽  
Buffer Layers ◽  
Ion Beam Sputtering ◽  
Ybco Films ◽  
Beam Sputtering ◽  
Uniform Composition

AbstractSuperconducting YBa2Cu3O7‐δ (YBCO) films 100‐300nm thick have been grown in‐situ on (100) SrTiO3 at 650°C by ion beam sputtering. Targets of Cu, CuO, Y, Y2O3, BaF2, BaCO3 and YBa2Cu3O7‐δ have been studied. Uniform composition throughout the film thickness has been achieved by co‐sputtering. Films are metallic (p300=300μΩcm) and textured, with Tc onsets at 92K and Tco=82K. Jc(77K) exceeds 105 Acm‐2. Films grown in‐situ on Si with ZrOx/Y2O3 and In2O3(10 at.%SnO2) buffer layers show Tc onsets at about 90K and Tco at about 50K, annealing improves Tco to 60K with resistivities p30o=2000μΩcm and 4000μΩcm respectively.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

Electron and ion irradiation-induced dissolution of mechanical twins in the intermetalic U3Si: An in situ HVEM study

1989 ◽  
Vol 47 ◽  
pp. 652-653
Author(s):  
Charles W. Allen ◽  
Robert C. Birtcher
Keyword(s):  
Elevated Temperatures ◽  
Ion Irradiation ◽  
Ion Beam ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Heavy Ion ◽  
High Energy ◽  
Mechanical Twinning ◽  
In Situ Experiments

The uranium silicides, including U3Si, are under study as candidate low enrichment nuclear fuels. Ion beam simulations of the in-reactor behavior of such materials are performed because a similar damage structure can be produced in hours by energetic heavy ions which requires years in actual reactor tests. This contribution treats one aspect of the microstructural behavior of U3Si under high energy electron irradiation and low dose energetic heavy ion irradiation and is based on in situ experiments, performed at the HVEM-Tandem User Facility at Argonne National Laboratory. This Facility interfaces a 2 MV Tandem ion accelerator and a 0.6 MV ion implanter to a 1.2 MeV AEI high voltage electron microscope, which allows a wide variety of in situ ion beam experiments to be performed with simultaneous irradiation and electron microscopy or diffraction.At elevated temperatures, U3Si exhibits the ordered AuCu3 structure. On cooling below 1058 K, the intermetallic transforms, evidently martensitically, to a body-centered tetragonal structure (alternatively, the structure may be described as face-centered tetragonal, which would be fcc except for a 1 pet tetragonal distortion). Mechanical twinning accompanies the transformation; however, diferences between electron diffraction patterns from twinned and non-twinned martensite plates could not be distinguished.

In-Situ Study of NiO Growth on Textured Nickel Tape Using Environmental Scanning Electron Microscope (ESEM) and Hot Stage

2001 ◽  
Vol 7 (S2) ◽  
pp. 1276-1277
Author(s):  
Y. Akin ◽  
R.E. Goddard ◽  
W. Sigmund ◽  
Y.S. Hascicek
Keyword(s):  
Buffer Layer ◽  
Lattice Mismatch ◽  
Sol Gel ◽  
Surface Oxidation ◽  
Dip Coating ◽  
Buffer Layers ◽  
Superconducting Film ◽  
Environmental Scanning ◽  
Cold Rolling And Annealing

Deposition of highly textured ReBa2Cu3O7−δ (RBCO) films on metallic substrates requires a buffer layer to prevent chemical reactions, reduce lattice mismatch between metallic substrate and superconducting film layer, and to prevent diffusion of metal atoms into the superconductor film. Nickel tapes are bi-axially textured by cold rolling and annealing at appropriate temperature (RABiTS) for epitaxial growth of YBa2Cu3O7−δ (YBCO) films. As buffer layers, several oxide thin films and then YBCO were coated on bi-axially textured nickel tapes by dip coating sol-gel process. Biaxially oriented NiO on the cube-textured nickel tape by a process named Surface-Oxidation- Epitaxy (SEO) has been introduced as an alternative buffer layer. in this work we have studied in situ growth of nickel oxide by ESEM and hot stage.Representative cold rolled nickel tape (99.999%) was annealed in an electric furnace under 4% hydrogen-96% argon gas mixture at 1050°C to get bi-axially textured nickel tape.

To Eliminate Curtain Effect of FIB TEM Samples by a Combination of Sample Dicing and Backside Milling

2014 ◽  
Author(s):  
Jian-Shing Luo ◽  
Hsiu Ting Lee
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Low Cost ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Site Specific ◽  
Dual Beam ◽  
Transmission Electron

Abstract Several methods are used to invert samples 180 deg in a dual beam focused ion beam (FIB) system for backside milling by a specific in-situ lift out system or stages. However, most of those methods occupied too much time on FIB systems or requires a specific in-situ lift out system. This paper provides a novel transmission electron microscopy (TEM) sample preparation method to eliminate the curtain effect completely by a combination of backside milling and sample dicing with low cost and less FIB time. The procedures of the TEM pre-thinned sample preparation method using a combination of sample dicing and backside milling are described step by step. From the analysis results, the method has applied successfully to eliminate the curtain effect of dual beam FIB TEM samples for both random and site specific addresses.

Sign in / Sign up

Export Citation Format

Share Document