The Influences of Annealing Temperatures on the Properties of the Sol-Gel Deposition SrBi4Ti4O15 Thin Films

2011 ◽  
Vol 415-417 ◽  
pp. 1855-1858
Author(s):  
Wen Cheng Tzou ◽  
Chien Chen Diao ◽  
Chao Chin Chan ◽  
Chia Ching Wu ◽  
Chang Fu Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Annealing Temperatures ◽  
Grain Sizes ◽  
Saturation Polarization ◽  
Frenkel Emission ◽  
Xrd Patterns ◽  
Surface Morphologies

In this study, SrBi4Ti4O15 (SBT) thin films were deposited onto the SiO2/p-Si(100) and Pt/Ti/SiO2/p-Si(100) substrates by using sol-gel method. After deposition, the SBT thin films were then heated by a rapid thermal annealing (RTA) process conducted in air for 1min at 600-800°C. The surface morphologies and the crystalline structures of the SBT thin films were investigated by using SEM and XRD patterns. The grain sizes increased and the pores decreased with rising RTA temperature. In addition, the coercive field decreased and the remanent polarization and saturation polarization increased with rising RTA temperature. The lnJ-E1/2 curves of the SBT thin films were also investigated to find the leakage current mechanisms correspond either to the Schottky emission or to the Poole-Frenkel emission.

Properties of RF Magnetron Sputtered Sr0.4Ba0.6Nb1.85Ta0.15O6 Thin Films

2013 ◽  
Vol 284-287 ◽  
pp. 193-197
Author(s):  
Cheng Fu Yang ◽  
Wen Cheng Tzou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Emission Mechanism ◽  
Grain Sizes ◽  
Conventional Furnace ◽  
Saturation Polarization ◽  
Frenkel Emission ◽  
Current Densities ◽  
Xrd Patterns

Sr0.4Ba0.6Nb1.85Ta0.15O6 (SBNT) ceramic was used as a target and SBNT thin films were deposited at room temperature. After deposition, the SBN thin films were annealed in conventional furnace (CFA) and in an oxygen atmosphere for 1h by changing the temperature from 700oC to 900oC. The thicknesses of the SBN thin films were calculated by SEM and they were about 450nm independent on the annealing temperature. From the XRD patterns, the as-deposited SBNT thin films displayed amorphous phase, whereas as CFA-treatment was used, the SBNT thin films displayed smooth surfaces. The grain sizes also increased with increasing CFA-treated temperature. In addition, the remanent polarization and saturation polarization increased and coercive field decreased with increasing CFA-treated temperature. Finally, the lnJ-E1/2 curves of the SBNT thin films was developed to find that the linear variations of leakage current densities correspond either to the Schottky emission mechanism or to the Poole-Frenkel emission mechanism.

0.75SrBi2Ta2O9-0.25Bi3TiTaO9 Layered Structural Thin Films: Microstructure and Ferroelectric Properties

2008 ◽  
Vol 368-372 ◽  
pp. 1814-1816
Author(s):  
Dan Xie ◽  
Zhi Gang Zhang ◽  
Tian Ling Ren ◽  
Li Tian Liu
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Grain Size ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Significant Enhancement ◽  
Solution Deposition ◽  
Annealing Temperatures

{0.75SrBi2Ta2O9-0.25Bi3TiTaO9}(SBT-BTT) thin films were prepared by the modified metalorganic solution deposition (MOSD) technique. The microstructure and ferroelectric properties of SBTBTT thin films were studied. The SBT-BTT thin films were produced at 750°C. The grain size and surface roughness of SBT-BTT films showed significant enhancement with an increase in annealing temperatures. It is found that SBT-BTT thin films have good ferroelectric properties. The measured remanent polarization values for SBT-BTT, SBT and BTT capacitors were 15, 7.5 and 4.8μC/cm2, respectively. The coercive field for SBT-BTT capacitors was 50kV/cm. More importantly, the polarization of SBT-BTT capacitors only decreased 5% after 1011 switching cycles at a frequency of 1MHz.

Enhanced Electrical properties in Mn-doped Bi3.25La0.75Ti3O12 thin films

2005 ◽  
Vol 902 ◽  
Author(s):  
Sushil Kumar Singh ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Switching Field ◽  
Mn Doping ◽  
Mn Doped

AbstractMn-doped Bi3.25La0.75Ti3O12 (BLT) thin films were fabricated by depositing sol-gel solutions on Pt/Ti/SiO2/Si <100> substrates. The surface morphology and ferroelectric properties of Mn-doped BLT films depend upon the orientation of the films. Small amount of Mn-doping in BLT films influences the ferroelectric properties of the films, that is, it enhances the remanent polarization and reduces the coercive field. The 1% Mn-doped BLT films show enhanced remanent polarization and reduced the coercive field by about 22%. To the contrary, Mn-doping more than 1% decreases polarization gradually. Mn-doping significantly improves the fatigue resistance of BLT films. The reduced polarization in the 3.3% Mn-doped thin film recovers during switching cycles higher than 5 × 105. Under high switching field, the probability of field-assisted unpinning of domains is expected to be high and this may be the main cause for increase in polarization after 5 × 105 in the 3.3% Mn-doped BLT film.

Influence of Annealing Temperature on the Properties of Sol-Gel Deposited Nb-Doped TiO2 Thin Films

2020 ◽  
Vol 845 ◽  
pp. 59-64
Author(s):  
Wen Cheng Tzou ◽  
Hon Kuan ◽  
You Cheng Chang
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Optical Transmittance ◽  
Crystalline Phases ◽  
Air Atmosphere ◽  
Coating Method ◽  
Nb Content ◽  
Xrd Patterns ◽  
Surface Morphologies

Nb-doped TiO2 (TNO) thin films were prepared by a sol-gel spin coating method with Nb content of 5 at.%, and then annealed in the temperature range of 500-900 °C. The surface morphologies and the crystalline phases of the TNO thin films were investigated by using SEM and XRD patterns. The grain sizes increased with rising annealing temperature, and the crystalline phases were completely transformed from anatase into rutile when the annealing temperature was above 900 °C in air atmosphere. In addition, the optical band gap decreased and the average optical transmittance was between 75 and 70 % in the range of visible light. Furthermore, the better electrical properties were obtained at the annealing temperature of 600 °C.

The Influences of Annealing Temperatures on the Properties of HfO2 Thin Film and the Fabrication of SiO2/HfO2 Distributed Bragg Reflector

2015 ◽  
Vol 1101 ◽  
pp. 238-241
Author(s):  
Wen Cheng Tzou ◽  
Hon Kuan ◽  
Kai Yang Chuang
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Si Substrates ◽  
Grain Sizes ◽  
Thermal Annealing Process ◽  
Xrd Patterns ◽  
Surface Morphologies

In this study, HfO2 thin films were deposited onto the Si substrates by RF magnetron sputtering system. After deposition, the HfO2 thin films were then heated by a furnace thermal annealing process in air and at 400-700oC. The surface morphologies and crystalline characteristics of the HfO2 thin films were investigated by using SEM and XRD patterns. The grain sizes and crystalline phases increased with rising annealing temperature. In addition, the SiO2/HfO2 distributed bragg reflector (DBR) was used for improving the external quantum efficiency of the GaN-based LEDs. The output power of LEDs with 9-pair SiO2/HfO2 DBR and with Ag mirror+6-pair SiO2/HfO2 DBR were increased by approximately 10.6% and 7%, respectively, as compared with the LEDs without SiO2/HfO2 DBR.

Ferroelectric Properties of Sol-Gel Derived Ca1-xSrxBi4Ti4O15 Thin Films

2008 ◽  
Vol 368-372 ◽  
pp. 100-102 ◽  
Author(s):  
Su Hua Fan ◽  
Jing Xu ◽  
Guang Da Hu ◽  
Bo He ◽  
Feng Qing Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Fatigue Resistance ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
High Concentration ◽  
Gel Method ◽  
Si Substrates

Ca1-xSrxBi4Ti4O15 thin films were fabricated by sol-gel method on Pt(100)/Ti/SiO2/Si substrates. Influence of Sr content on the microstructure and ferroelectric properties of Ca1-xSrxBi4Ti4O15 thin films were systematically studied. The results indicate that Ca0.4Sr0.6Bi4Ti4O15 thin film has better ferroelectric properties with remanent polarization (2Pr) of 29.1+C/cm2, coercive field (2Ec) of 220 kV/cm. Furthermore, the film has good fatigue resistance. The better ferroelectric properties of Ca0.4Sr0.6Bi4Ti4O15 thin film originate from the relatively high concentration of a-axis oriented grains.

scholarly journals Influence of texture on the switching behavior of Pb(Zr0.70Ti0.30)O3 sol-gel derived thin films

1997 ◽  
Vol 12 (2) ◽  
pp. 531-540 ◽  
Author(s):  
Keith G. Brooks ◽  
Radosveta D. Klissurska ◽  
Pedro Moeckli ◽  
N. Setter
Keyword(s):  
Thin Films ◽  
Spontaneous Polarization ◽  
Coercive Field ◽  
Sol Gel ◽  
Switching Behavior ◽  
Fatigue Properties ◽  
Saturation Polarization ◽  
Second Phases ◽  
Fatigue Characteristics ◽  
Switching Characteristics

Rhombohedral Pb(Zr0.70Ti0.30)O3 thin films of four different well-defined textures, namely, (100), (111), bimodal (110)/(111), and (100)/(111), were prepared by a sol-gel method. The films were characterized in terms of grain size, presence of second phases, surface roughness, columnarity of grains, and other microstructural features. The dielectric, ferroelectric, and fatigue properties were investigated, with emphasis on the hysteresis switching characteristics. Results are discussed from the reference point of the allowable spontaneous polarization directions available for the different textures. The values of coercive field, remanent and saturation polarization, and slope of the loop at the coercive field, at saturating fields can be qualitatively explained based on the texture, independent of microstructural differences. The occurrence of surface pyrochlore, however, is observed to affect the functionality of the saturation curves, particularly for the samples of bimodal texture. Shearing of the hysteresis curves of the bimodal films is also attributed to surface microstructural features. The occurrence of nonswitching 71° or 109° domains in the (111) and (110)/(111) textured films is hypothesized based on a comparison with the data from the (100) textured film. Corrected saturation polarization values agree with the spontaneous polarization values of rhombohedral PZT single crystals and published calculated values for rhombohedral PZT ceramics. The fatigue characteristics show increases in the switching component of polarization in the range 103−107 bipolar cycles, particularly for the (111) textured sample. Onset of fatigue is observed for all samples between 107 and 108 switching cycles.

Effects of Annealing Temperature on Morphology and Dielectric Property of BiFeO3 Films

2012 ◽  
Vol 512-515 ◽  
pp. 1736-1739
Author(s):  
Li Li Zhang ◽  
Guo Qiang Tan ◽  
Meng Cheng ◽  
Hui Jun Ren ◽  
Ao Xia
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Property ◽  
Annealing Temperature ◽  
Raw Materials ◽  
Sol Gel ◽  
Frequency Range ◽  
Annealing Temperatures ◽  
Pure Phase ◽  
Lower Loss

Fe(NO3)3•9H2O and Bi(NO3)3•5H2O were used as raw materials. BiFeO3 thin films were prepared by sol-gel method. The effects of annealing temperatures on the morphology and dielectric property of the thin films were studied. XRD results show that the multi-crystal thin films with pure phase are obtained when annealed at 500°C and 550°C. But annealing at 580°C will lead to the appearance of Bi2.46Fe5O12 phase.AFM images show that as the increase of annealing temperatures the surface toughness of the thin film is decreased, but the surface undulation of the thin films is decreased gradually. Within the frequency range of 1KHz~1MHz, the dielectric constant of BiFeO3 thin films is kept over 125 and it does not change very much from 500°C to 580°C. Annealed at 550°C, the BiFeO3 thin films with the lower loss are obtained. At 1MHz, the dielectric loss is 0.12.

PREPARATION AND FERROELECTRIC PROPERTY OF (100)-ORIENTED Ca0.4Sr0.6Bi4Ti4O15 THIN FILM ON Pt/Ti/SiO2/Si SUBSTRATE

2010 ◽  
Vol 17 (05n06) ◽  
pp. 445-449 ◽  
Author(s):  
SUHUA FAN ◽  
QUANDE CHE ◽  
FENGQING ZHANG
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Property ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Sem Analysis ◽  
Si Substrate ◽  
Degree Of Orientation ◽  
Equiaxed Grains

The (100)-oriented Ca0.4Sr0.6Bi4Ti4O15(C0.4S0.6BTi ) thin film was successfully prepared by a sol-gel method on Pt/Ti/SiO2/Si substrate. The orientation and formation of thin films under different annealing schedules were studied using XRD and SEM. XRD analysis indicated that (100)-oriented C0.4S0.6BTi thin film with degree of orientation of I(200)/I(119) = 1.60 was prepared by preannealing the film at 400°C for 3 min followed by rapid thermal annealing at 800°C for 5 min. SEM analysis further indicated that the (100)-oriented C0.4S0.6BTi thin film with a thickness of about 800 nm was mainly composed of equiaxed grains. The remanent polarization and coercive field of the film were 16.1 μC/cm2 and 85 kV/cm, respectively.

Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

2011 ◽  
Vol 197-198 ◽  
pp. 1781-1784
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Gel Processing ◽  
Coercive Electric Field ◽  
Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

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