W–Ti–O layers for gas-sensing applications: Structure, morphology, and electrical properties

1998 ◽  
Vol 13 (6) ◽  
pp. 1568-1575 ◽  
Author(s):  
L. Sangaletti ◽  
E. Bontempi ◽  
L. E. Depero ◽  
R. Salari ◽  
M. Zocchi ◽  
...  

The kinetics of phase transitions and phase segregation induced by annealing temperature on the Ti–W–O gas-sensing layer was studied by x-ray diffraction, Raman spectroscopy, and scanning electron microscopy. The main goal was to identify, on the basis of kinetics studies, structurally stable Ti–WO3 thin film phases and compare their response to polluting gases in order to determine possible correlations between structural and electrical properties of the sensing layers.

2004 ◽  
Vol 811 ◽  
Author(s):  
Ortega Nora ◽  
S. Bhattacharyya ◽  
P. Bhattacharya ◽  
R.R. Das ◽  
R.S. Katiyar

ABSTRACTThe effect of anthanum substitution (0-20%) on phase formation, structural evolution and electrical properties of SrBi2Ta2O9 (SBT) ceramics were investigated. X-ray diffraction studies revealed that phase pure SBT bulk samples can be synthesized with lanthanum doping without any phase segregation. Raman spectroscopy was used to understand the lattice vibrational characteristics of La substituted SBT compound. The ferroelectric soft mode at 27 cm−1 was shifted towards the lower frequencies at room temperature with increase in La concentrations. The octahedral stretching mode (O-Ta-O) did not influenced by La substitution in SBT. The x-ray photoemission spectroscopy measurements showed the decrease of binding energy of Bi 4f core levels (5/2 and 7/2) upon La substitution in SBT. The dielectric constant was increased from 120 to 190 up to 10% La doping and decreased with further increase in La concentration.


Author(s):  
A. Kareem Dahash Ali ◽  
Nihad Ali Shafeek

This study included the fabrication of    compound (Tl2-xHgxBa2-ySryCa2Cu3O10+δ) in a manner solid state and under hydrostatic pressure ( 8 ton/cm2) and temperature annealing(850°C), and determine the effect of the laser on the structural and electrical properties elements in the compound, and various concentrations of x where (x= 0.1,0.2,0.3 ). Observed by testing the XRD The best ratio of compensation for x is 0.2 as the value of a = b = 5.3899 (A °), c = 36.21 (A °) show that the installation of four-wheel-based type and that the best temperature shift is TC= 142 K  .When you shine a CO2 laser on the models in order to recognize the effect of the laser on these models showed the study of X-ray diffraction of these samples when preparing models with different concentrations of the values ​​of x, the best ratio of compensation is 0.2 which showed an increase in the values ​​of the dimensions of the unit cell a=b = 5.3929 (A °), c = 36.238 (A°). And the best transition temperature after shedding laser is TC=144 K. 


2009 ◽  
Vol 1226 ◽  
Author(s):  
Monica Sorescu ◽  
Lucian Diamandescu ◽  
Adelina Tomescu

AbstractThe xZnO-(1-x)alpha-Fe2O3 and xZrO2-(1-x)alpha-Fe2O3 nanoparticles systems have been obtained by mechanochemical activation for x=0.1, 0.3 and 0.5 and for ball milling times ranging from 2 to 24 hours. Structural and magnetic characteristics of the zinc and zirconium-doped hematite systems were investigated by X-ray diffraction (XRD), Mössbauer spectroscopy and conductivity measurements. Using the dual absorber method, the recoilless fraction was derived as function of ball milling time for each value of the molar concentration involved. As ZnO is not soluble in hematite in the bulk form, the present study clearly illustrates that the solubility limits of an immiscible system can be extended beyond the limits in the solid state by mechanochemical activation. Moreover, this synthetic route allowed us to reach nanometric particle dimensions, which makes these materials very important for gas sensing applications.


2001 ◽  
Vol 666 ◽  
Author(s):  
Fumiaki Mitsugi ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara ◽  
Jagdish Narayan ◽  
Alexander M. Grishin

ABSTRACTWe prepared colossal magnetoresistive La0.8Sr0.2MnO3 thin films on the MgO, SrTiO3 and LaAlO3 single crystal substrates using KrF excimer pulsed laser ablation technique. The structural and electrical properties of the La0.8Sr0.2MnO3 thin films which were strained by the lattice mismatch are reported. The in-plane lattice mismatch between the La0.8Sr0.2MnO3 and MgO, SrTiO3 and LaAlO3 substrates are -7.8 %, -0.5 % and +2.3 %, respectively. The X-ray diffraction spectra of the films exhibited c-axis orientation. In the case of the La0.8Sr0.2MnO3 / LaAlO3 thin films with thickness over 100 nm, the divided (00l) peaks were observed. The surface morphology and transport property of the strongly stressed La0.8Sr0.2MnO3 / LaAlO3 were different from those of La0.8Sr0.2MnO3 / MgO and La0.8Sr0.2MnO3 / SrTiO3thin films.


2017 ◽  
Vol 31 (33) ◽  
pp. 1750318 ◽  
Author(s):  
D. Venkatesh ◽  
K. V. Ramesh

Polycrystalline Cu substituted Ni–Zn ferrites with chemical composition Ni[Formula: see text]Zn[Formula: see text]-Cu[Formula: see text]Fe2O4 (x = 0.00 to 0.25 in steps of 0.05) have been prepared by citrate gel autocombustion method. The samples for electrical properties have been sintered at 900[Formula: see text]C for 4 h. The X-ray diffraction patterns of all samples indicate the formation of single phase spinel cubic structure. The value of lattice parameter is decreases with increasing Cu concentration. The estimated cation distribution can be derived from X-ray diffraction intensity calculations and IR spectra. The tetrahedral and octahedral bond lengths, bond angles, cation–cation and cation–anion distances were calculated by using experimental lattice parameter and oxygen positional parameters. It is observed that Cu ions are distributed in octahedral site and subsequently Ni and Fe ions in tetrahedral site. The grain size of all samples has been calculated by Scanning Electron Microscopy (SEM) images. The variations in DC electrical resistivity and dielectric constant have been explained on the basis of proposed cation distribution.


2013 ◽  
Vol 06 (03) ◽  
pp. 1350035 ◽  
Author(s):  
DONGMEI XU ◽  
MEIYU GUAN ◽  
QINGHONG XU ◽  
YING GUO ◽  
YAO WANG

In this paper, Ce -doped CdAl layered double hydroxide (LDH) was first synthesized and the derivative CdO/Al2O3/CeO2 composite oxide was prepared by calcining Ce -doped CdAl LDH. The structure, morphology and chemical state of the Ce doped CdAl LDH and CdO/Al2O3/CeO2 were also investigated by X-ray diffraction (XRD), Fourier transform infrared (FT-IR), solid state nuclear magnetic resonance (SSNMR), scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS). The gas sensing properties of CdO/Al2O3/CeO2 to ethanol were further studied and compared with CdO/Al2O3 prepared from CdAl LDH, CeO2 powder as well as the calcined Ce salt. It turns out that CdO/Al2O3/CeO2 sensor shows best performance in ethanol response. Besides, CdO/Al2O3/CeO2 possesses short response/recovery time (12/72 s) as well as remarkable selectivity in ethanol sensing, which means composite oxides prepared from LDH are very promising in gas sensing application.


1996 ◽  
Vol 453 ◽  
Author(s):  
Igor Kosacki ◽  
Mark Shumsky ◽  
Harlan U. Anderson

AbstractThe structural and electrical properties of SrCe1-xYbxO3 ceramics have been studied as a function of temperature and Yb-concentration using x-ray diffraction and impedance techniques. The influence of Yb-dopants on electrical transport and structural disorder has been studied. A correlation between the structural properties, electrical conductivity is observed and discussed. These measurements allow us to determine the mechanism of charge carrier compensation and also the concentration and mobility of the electrical species.


2019 ◽  
Vol 14 (31) ◽  
pp. 1-12
Author(s):  
Jamal M. Rzaij

Nanostructural cupric oxide (CuO) films were prepared on Si and glass substrate by pulsed laser deposition technique (PLD) using laser Nd:YAG, using different laser pulses energies from 200 to 600 mJ. The X-ray diffraction pattern (XRD) of the films showed a polycrystalline structure with a monoclinic symmetry and preferred orientation toward (111) plane with nano structure. The crystallite size was increasing with increasing of laser pulse energy. Optical properties was characterized by using UV–vis spectrometer in the wave lengthrange (200-1100) nm at room temperature. The results showed that the transmission spectrum decreases with the laser pulses energy increase. Sensitivity of NO2 gas at different operating temperatures, (50°C, 100°C, 150°C and 200°C) was calculated.


2021 ◽  
Author(s):  
Santanu Maity ◽  
P.P Sahu ◽  
Tiju Thomas

Abstract ZnO nanostructures are promising for a wide range of applications, including gas sensors. Ethanol sensing using ZnO remains unexplored though. In this paper, we report ethanol-sensing using un-doped ZnO nano flowers and Mg doped ZnO nano flowers. These are grown using a rather simple chemo-thermal process, making this a plausibly scalable technology. To study the structural and morphological properties of undoped ZnO and Mg doped ZnO nanoflowers, Raman spectroscopy, Fourier Transform Infrared Spectroscopy (FTIR), x-ray diffraction and Field Emission Scanning Electron Microscopy (FESEM) are carried out. Ethanol sensing properties of undoped ZnO and Mg doped ZnO nanoflower devices are investigated toward different ethanol concentration (concentration range of 1–600 ppm at 100°C–200°C). Our findings show that 15% Mg doped ZnO nano flower is better than ZnO nano flower for ethanol gas-sensing applications.


2012 ◽  
Vol 717-720 ◽  
pp. 849-852
Author(s):  
Jung Ho Lee ◽  
Ji Hong Kim ◽  
Kang Min Do ◽  
Byung Moo Moon ◽  
Sung Jae Joo ◽  
...  

The characteristics of Ga-doped zinc oxide (GaZnO) thin films deposited at different substrate temperatures (TS~250 to 550oC) on 4H-SiC have been investigated. Structural and electrical properties of GaZnO thin film on n-type 4H-SiC (100)were investigated by using x-ray diffraction, atomic force microscopy (AFM), Hall effect measurement, and Auger electron spectroscopy (AES). Hall mobility is found to increase as the substrate temperature increase from 250 to 550 oC, whereas the lowest resistivity (~3.3 x 10-4 Ωcm) and highest carrier concentration (~1.33x1021cm-3) values are observed for the GaZnO films deposited at 400 oC. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ Introduction ions may affect the electrical properties of GaZnO films on SiC.


Sign in / Sign up

Export Citation Format

Share Document