High-temperature interfacial reaction of an Al thin film with single-crystal 6H–SiC

2000 ◽  
Vol 15 (11) ◽  
pp. 2284-2287 ◽  
Author(s):  
Byung-Teak Lee ◽  
Yang-Soo Shin ◽  
Jin Hyeok Kim
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Layer Structure ◽  
Compound Layer ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Double Layer Structure ◽  
Transmission Electron ◽  
Al Thin Film

Interfacial reactions between an Al thin film and a single-crystal (001) 6H–SiC substrate were investigated using x-ray diffraction and cross-sectional transmission electron microscopy. Aluminum thin films were prepared by radio-frequency magnetron sputtering method on 6H–SiC substrates at room temperature and then annealed at various temperatures from 500 to 900 °C. A columnar-type polycrystalline Al thin film was formed on a 6H–SiC substrate in the as-deposited sample. No remarkable microstructural change, compared to the as-deposited sample, was observed in the sample annealed at 500 °C for 1 h. However, it was found that the Al layer reacted with the SiC substrate at 700 °C and formed an Al–Si–C ternary compound at the Al/SiC interface. Samples annealed at 900 °C showed a double-layer structure with an Al–Si mixed surface layer and an Al–Si–C compound layer below in contact with the substrate.

Evolution of Epitaxial SixGei1-x Alloys on Si(100) During Thermal Annealing a-Ge/Au Bilayers Deposited on Si Substrate

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Growth Dynamics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTSolid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dynamics was investigated using X-ray diffraction, Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy. Upon annealing, Ge atoms migrate along the grain boundaries of polycrystalline Au and the epitaxial growth initiates at localized triple points between two Au grains and Si substrate, simultaneously incorporating a small amount of Si dissolved in Au. The Au is gradually displaced into the top Ge layer. Individual single crystal SixGei1-x islands then grow laterally as well as vertically. Finally, the islands coalesce to form a uniform layer of epitaxial SixGe1-x alloy on the Si substrate. The amount of Si incorporated in the final epitaxial film was found to be dependent upon the annealing temperature.

Investigation of TiN/TiSi2 Bilayer Thin Films on Si (100) Substrate

1995 ◽  
Vol 402 ◽  
Author(s):  
Y. Shor ◽  
J. Pelleg
Keyword(s):  
Layer Structure ◽  
Reactive Sputtering ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Tin Films ◽  
X Ray ◽  
Resistivity Measurements ◽  
Transmission Electron

AbstractIn this work the conditions of forming a bi – layer structure of TiN/TiSi2 thin film on Si (100) substrate is investigated. Two methods of producing this structure were used: a) Deposition of Ti on Si (100), followed by reactive sputtering to obtain TiN on top of this layer and b) codeposition of Ti and Si on Si (100) and then deposition of TiN by reactive sputtering. The reactive sputtering was carried out in a mixture of N2/Ar with 20% N2. This amount is believed to be optimal for obtaining good quality and stoichiometric TiN films. Annealing is essential to form TiSi2 and it was performed either in the sputtering chamber immediately after the deposition or by rapid thermal annealing (RTA). The structure of the specimens was analyzed by X-ray diffraction using step scanning, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). TEM analysis was done on cross sectional specimens and also electron diffraction results were recorded. Resistivity measurements were performed by four – point probe method. The influence of TiN on the silicide formation was established. The results indicate that in the presence of TiN the phase TiSi2 was obtained, but in its absence Ti5 Si3 is formed under the same conditions of deposition and annealing. The stress distribution was investigated by Hall – Williamson curves and it was found that TiN stabilizes the silicide film and no peeling was observed. The effectiveness of TiN as diffusion barrier against Al and Si penetration was tested at 500°C/lh. It was found, that under these conditions, the TIN/TiSi2 structure is about the same, as before the heat treatment. No Al penetration is observed.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

Quantitative Study of Al/W Interaction In Si/SiO2/W-Ti/Al Thin Film System

1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai
Keyword(s):  
Thin Film ◽  
Film System ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Thin Film System ◽  
Glancing Angle ◽  
Integrated Intensity ◽  
Al Thin Film ◽  
Kinetics Of

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.

The Characterization Of Chemical Bath Deposited Cds On Single Crystal InP Substrates

1997 ◽  
Vol 485 ◽  
Author(s):  
G. M. Riker ◽  
M. M. Al-Jassim ◽  
F. S. Hasoon
Keyword(s):  
Electron Microscopy ◽  
Single Crystal ◽  
Surface Cleaning ◽  
Film Morphology ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Fine Grained ◽  
Transmission Electron ◽  
Cds Thin Films ◽  
Inp Substrates

AbstractWe have investigated CdS thin films as possible passivating window layers for InP. The films were deposited on single crystal InP by chemical bath deposition (CBD). The film thickness, as optically determined by ellipsometry, was varied from 500 to 840Å. The film morphology was investigated by high resolution scanning electron microscopy (SEM), whereas the film microstructure was studied by X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM). Most of the films were fine-grained polycrystalline CdS, with some deposition conditions resulting in epitaxial growth. Cross-sectional TEM examination revealed the presence of interface contaminants. The effect of such contaminants on the film morphology and microstructure was studied, and various approaches for InP surface cleaning/treatment were investigated. The epitaxial films were determined to be hexagonal on both the (111) and (100) InP substrates; however, they were heavily faulted.

Determination of Dislocation Densities in Hexagonal Close-Packed Metals using X-Ray Diffraction and Transmission Electron Microscopy

1991 ◽  
Vol 35 (A) ◽  
pp. 593-599 ◽  
Author(s):  
M. Griffiths ◽  
J.E. Winegar ◽  
J.F. Mecke ◽  
R.A. Holt
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystal ◽  
Plastic Anisotropy ◽  
Zirconium Alloys ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hexagonal Close Packed ◽  
Transmission Electron ◽  
Dislocation Densities

AbstractX-ray diffraction (XRD) line-broadening analysis has been used to determine dislocation densities in zirconium alloys with hexagonal closepacked (hep) crystal structures and a complex distribution of dislocations reflecting the plastic, anisotropy of the material. The validity of the technique has been assessed by comparison with direct measurements of dislocation densities in deformed polycrystalline and neutron-irradiated single crystal material using transmission electron microscopy (TEM). The results show that-there is good agreement between the XRD and TEM for measurements on the deformed material whereas there is a large discrepancy for measurements on the irradiated single crystal; the XRD measurements significantly underestimating the TEM observations.

scholarly journals The Reliability Improvement of Cu Interconnection by the Control of Crystallizedα-Ta/TaNxDiffusion Barrier

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Wei-Lin Wang ◽  
Chia-Ti Wang ◽  
Wei-Chun Chen ◽  
Kuo-Tzu Peng ◽  
Ming-Hsin Yeh ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Practical Application ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Reliability Improvement ◽  
N Concentration ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Interconnection Structure

Ta/TaN bilayers have been deposited by a commercial self-ionized plasma (SIP) system. The microstructures of Ta/TaN bilayers have been systematically characterized by X-ray diffraction patterns and cross-sectional transmission electron microscopy. TaN films deposited by SIP system are amorphous. The crystalline behavior of Ta film can be controlled by the N concentration of underlying TaN film. On amorphous TaN film with low N concentration, overdeposited Ta film is the mixture ofα- andβ-phases with amorphous-like structure. Increasing the N concentration of amorphous TaN underlayer successfully leads upper Ta film to form pureα-phase. For the practical application, the electrical property and reliability of Cu interconnection structure have been investigated by utilizing various types of Ta/TaN diffusion barrier. The diffusion barrier fabricated by the combination of crystallizedα-Ta and TaN with high N concentration efficiently reduces the KRc and improves the EM resistance of Cu interconnection structure.

Strain-Induced Diffusion in Heteroepitaxially Grown CuInSe2 on GaAs Substrates

1995 ◽  
Vol 399 ◽  
Author(s):  
P. Fons ◽  
S. Niki ◽  
A. Yamada ◽  
A. Okada ◽  
D.J. Tweet
Keyword(s):  
Thin Film ◽  
Secondary Ion Mass Spectrometry ◽  
Second Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
State Of Stress ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Lattice Matched

ABSTRACTA series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. Transmission electron microscopy and high resolution x-ray diffraction measurements revealed the presence of a second phase with chalcopyrite symmetry strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

Fine Tuning Magnetic Properties of FePt:C Thin Films by FePt UnderLayers

2013 ◽  
Vol 313-314 ◽  
pp. 254-257
Author(s):  
Ling Fang Jin ◽  
Hong Zhuang
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Magnetic Properties ◽  
Fine Tuning ◽  
Nanocomposite Films ◽  
Nanocomposite Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

Nonepitaxially grown FePt (x)/FePt:C thin films were synthesized, where FePt (x) (x=2, 5, 8, 11, 14 nm) layers were served as underlayers and FePt:C layer was nanocomposite with thickness of 5 nm. The effect of FePt underlayer on the ordering, orientation and magnetic properties of FePt:C thin films has been investigated by adjusting FePt underlayer thicknesses from 2 nm to 14 nm. X-ray diffraction (XRD), together with transmission electron microscopy (TEM) confirmed that the desired L10 phase was formed and films were (001) textured with FePt underlayer thickness decreased less 5 nm. For 5 nm FePt:C nanocomposite thin film with 2 nm FePt underlayer, the coercivity was 8.2 KOe and the correlation length of FePt:C nanocomposite film was 67 nm. These results reveal that the better orientation and magnetic properties for FePt:C nanocomposite films can be tuned by decreasing FePt underlayer thickness.

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