Low-temperature Crystallization of SrBi2Ta2O9 Thin Filmswith Bi2O3 Interfacial Layers by Liquid-delivery Metalorganicchemical Vapor Deposition

Ferroelectric SrBi2Ta2O9 (SBT) thin films and Bi2O3 interfacial layers were depositedonto the Pt/Ti/SiO2/Si substrates via liquid-delivery metalorganic chemical vapordeposition. The SBT films with a 5-nm-thick Bi2O3 interfacial layer were well crystallized without c-axis orientation, even at deposition temperature of 540 °C and showed a stronger (115) orientation than those without a Bi2O3 layer with increasing annealing temperature. The remanent polarizations of SBT films with Bi2O3 interfacial layer were significantly improved in comparison with those without Bi2O3 layer. The remanent polarization (2Pr) and coercive field (Ec) of SBT films without and with aBi2O3 interfacial layer annealed at 750 °C were 12 and 21 μC/cm2 and 60 and38 kV/cm, respectively, at an applied voltage of 5 V.

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Low-Temperature Crystallization of Pb(Zr0.4,Ti0.6)O3 Thin Films by Chemical Solution Deposition

MRS Proceedings ◽

10.1557/proc-688-c1.4.1 ◽

2001 ◽

Vol 688 ◽

Cited By ~ 2

Author(s):

Kazunari Maki ◽

Nobuyuki Soyama ◽

Kaoru Nagamine ◽

Satoru Mori ◽

Katsumi Ogi

Keyword(s):

Thin Films ◽

Single Phase ◽

Annealing Temperature ◽

Sol Gel ◽

Solution Deposition ◽

Si Substrates ◽

Pzt Films ◽

Columnar Grains ◽

Low Temperature Crystallization ◽

Temperature Crystallization

AbstractWe studied the crystallization of sol-gel derived Pb(Zr0.4Ti0.6)O3 [PZT(40/60)] thin films at 400 down to 390°C on Pt/SiO2/Si substrates by combination of diol-based solutions and modified film preparation processes. It was found that PZT films could be crystallized at 390°C and that PZT films crystallized at 400°C had microstructures with perovskite-single-phase columnar grains and good ferroelectric characteristics such as switched polarization (2 Pr) of 20 μC/cm2 and relative permittivity (εr) of 740. Next, we evaluated annealing temperature dependence of PZT(40/60) thin films crystallized at 390 to 435°C. The results indicated that (111)-orientation of perovskite phases became weaker, (100)-orientation of those became stronger, and the perovskite grain size increased with decreasing in annealing temperature.

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Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.197-198.1781 ◽

2011 ◽

Vol 197-198 ◽

pp. 1781-1784

Author(s):

Hua Wang ◽

Jian Li ◽

Ji Wen Xu ◽

Ling Yang ◽

Shang Ju Zhou

Keyword(s):

Thin Films ◽

Remanent Polarization ◽

Annealing Temperature ◽

Ferroelectric Properties ◽

Sol Gel ◽

Hysteresis Loops ◽

Si Substrates ◽

Gel Processing ◽

Coercive Electric Field ◽

Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

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Low Temperature (~300°C) Epitaxial Growth of SiGe by Liquid-Solid Coexisting Annealing of A-GeSn/Si(100) Structure

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.481.137 ◽

2013 ◽

Vol 481 ◽

pp. 137-140

Author(s):

Hironori Chikita ◽

Ryo Matsumura ◽

T. Sadoh ◽

M. Miyao

Keyword(s):

Low Temperature ◽

Integrated Circuits ◽

Epitaxial Growth ◽

Annealing Time ◽

Large Scale ◽

Annealing Temperature ◽

Next Generation ◽

Low Temperature Crystallization ◽

Temperature Crystallization

To develop a new low-temperature crystallization technique, annealing characteristics of a-GeSn/Si (100) structures are investigated. It is revealed that epitaxial growth accompanying Si-Ge mixing is generated at temperatures in the liquid-solid coexisting region of the Ge-Sn system. The annealing temperature necessary for epitaxial growth is significantly decreased by increasing annealing time and/or Sn concentration. Consequently, epitaxial growth at 300°C becomes possible. These findings are expected to be useful to realize next-generation large-scale integrated circuits, where various multi-functional devices are integrated.

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Effects of (100)-textured LaNiO3 Electrode on the Deposition and Characteristics of PbTiO3 Thin Films Prepared by rf Magnetron Sputtering

Journal of Materials Research ◽

10.1557/jmr.1997.0289 ◽

1997 ◽

Vol 12 (8) ◽

pp. 2158-2164 ◽

Cited By ~ 14

Author(s):

Chii-Ming Wu ◽

Tian-Jue Hong ◽

Tai-Bor Wu

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Deposition Temperature ◽

Remanent Polarization ◽

Rf Magnetron Sputtering ◽

Si Substrates ◽

Oriented Films ◽

Lanio3 Electrode ◽

Ferroelectric Hysteresis ◽

Hysteresis Characteristics

Highly (100)-oriented thin films of PbTiO3 were prepared on (100)-textured LNO/Pt/Ti/SiO2/Si substrates by rf magnetron sputtering at temperatures ≥480 °C, while randomly oriented PbTiO3 films were obtained on Pt/Ti/SiO2/Si substrates. The textured LNO layer can help to control the orientation of PbTiO3 thin films, and reduce their surface roughness quite significantly. The dielectric constant (εT) of PbTiO3 films deposited on LNO was lower than that of films on Pt and the dielectric loss (tan δ) increased when a higher deposition temperature or longer time was used. The highly (100)-textured PbTiO3 films also showed different ferroelectric hysteresis characteristics, i.e., a higher coercive field and a lower remanent polarization, from that of randomly oriented films deposited on Pt.

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Effects of BaM Interfacial Layer on the $c$-Axis Orientation of BaM Thin Films Deposited on SiO$_{2}$/Si Substrates

IEEE Transactions on Magnetics ◽

10.1109/tmag.2013.2245306 ◽

2013 ◽

Vol 49 (7) ◽

pp. 4226-4229 ◽

Cited By ~ 4

Author(s):

Zhiyong Xu ◽

Zhongwen Lan ◽

Ke Sun ◽

Zhong Yu ◽

Rongdi Guo ◽

...

Keyword(s):

Thin Films ◽

Interfacial Layer ◽

Axis Orientation ◽

Si Substrates

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Effect of Annealing Temperature on the Structures and Properties of Bi4.15Nd0.85Ti3FeO15 Thin Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.633.290 ◽

2014 ◽

Vol 633 ◽

pp. 290-294

Author(s):

Yu Pei ◽

Feng Ming Pan

Keyword(s):

Thin Films ◽

Fatigue Resistance ◽

Decomposition Method ◽

Room Temperature ◽

Remanent Polarization ◽

Annealing Temperature ◽

Si Substrates ◽

Structures And Properties ◽

Metal Organic ◽

Organic Decomposition

To investigate the effect of annealing temperature on the structures and properties of Bi4.15Nd0.85Ti3FeO15 (BNTF), their thin films with four perovskite slabs were deposited on Pt/Ti/SiO2/Si substrates by the metal-organic decomposition method. Good remanent polarization and excellent fatigue resistance were observed at room temperature. The BNTF thin films annealed at 780°C presented better ferroelectricity than those annealed at 700°C-780°C. Ferromagnetic of BNTF thin films was not observed at room temperature.

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Metal-Induced Low-Temperature Crystallization of Amorphous SiGe on Insulating Films

MRS Proceedings ◽

10.1557/proc-744-m2.8 ◽

2002 ◽

Vol 744 ◽

Author(s):

M. Miyao ◽

H. Kanno ◽

I. Tsunoda ◽

T. Sadoh ◽

A. Kenjo

Keyword(s):

Low Temperature ◽

Annealing Temperature ◽

Growth Conditions ◽

The Other ◽

One Dimensional ◽

Insulating Films ◽

Low Temperature Crystallization ◽

Advanced System ◽

Ge Doping ◽

Temperature Crystallization

ABSTRACTMetal-induced low temperature (≤ 550 °C) crystallization of a-Si1-xGex (0 ≤ × ≤ 1 ) layers on SiO2 films has been investigated. For low Ge fractions below 20 %, Ge-doping enhanced plane growth was observed. This realized strain-free poly-Si0.8Ge0.2 films with large grains (18 μm). On the other hand, dendrite growth was dominant for intermediate Ge fractions with 40–60 %. Directions and widths of dendrites became straight and narrow with decreasing annealing temperature. As a result, very sharp needlelike crystals (width: 0.05 μm, length: 10 μm) were obtained at the optimized growth conditions (x: 0.4, annealing: 450 °C, 20 h). These new polycrystalline SiGe films on insulators should be used for the advanced system-in-displays and novel one-dimensional wires.

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STRUCTURE CONTROL AND FERROELECTRIC PROPERTIES OF SrBi4Ti4O15 THIN FILMS ON Si SUBSTRATES COATED BY (100)- AND (110)-ORIENTED LaNiO3 ELECTRODES

Surface Review and Letters ◽

10.1142/s0218625x07009554 ◽

2007 ◽

Vol 14 (03) ◽

pp. 435-438

Author(s):

PILONG WANG ◽

GUANGDA HU ◽

YANXIA DING ◽

SUHUA FAN

Keyword(s):

Thin Film ◽

Thin Films ◽

Coercive Field ◽

Remanent Polarization ◽

Annealing Temperature ◽

Volume Fraction ◽

Ferroelectric Properties ◽

Epitaxial Relationship ◽

Structure Control ◽

Si Substrates

SrBi 4 Ti 4 O 15 ( SBTi ) thin films were prepared on (100)- and (110)-oriented LaNiO 3( LNO ) electrodes by a metalorgranic decomposition (MOD) technique at an annealing temperature of 650°C. c-axis-oriented SBTi thin film with volume fraction of 0.89 can be formed on a (100)-oriented LNO film due to the epitaxial relationship between c-axis-oriented SBTi and LNO (100). In contrast, SBTi film deposited on LNO (110) shows random orientations with strong (119) and (200) peaks. The remanent polarization (Pr) and coercive field (Ec) of the random oriented SBTi film were 18.1 μC/cm2 and 70 kV/cm, respectively. This suggests that (110)-oriented LNO electrode is a better choice for obtaining SBTi films with higher volume fraction of a(b)-axis-orientated grains.

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