STRUCTURE CONTROL AND FERROELECTRIC PROPERTIES OF SrBi4Ti4O15 THIN FILMS ON Si SUBSTRATES COATED BY (100)- AND (110)-ORIENTED LaNiO3 ELECTRODES
SrBi 4 Ti 4 O 15 ( SBTi ) thin films were prepared on (100)- and (110)-oriented LaNiO 3( LNO ) electrodes by a metalorgranic decomposition (MOD) technique at an annealing temperature of 650°C. c-axis-oriented SBTi thin film with volume fraction of 0.89 can be formed on a (100)-oriented LNO film due to the epitaxial relationship between c-axis-oriented SBTi and LNO (100). In contrast, SBTi film deposited on LNO (110) shows random orientations with strong (119) and (200) peaks. The remanent polarization (Pr) and coercive field (Ec) of the random oriented SBTi film were 18.1 μC/cm2 and 70 kV/cm, respectively. This suggests that (110)-oriented LNO electrode is a better choice for obtaining SBTi films with higher volume fraction of a(b)-axis-orientated grains.