Interfaces between solution-derived LiMn2O4 thin films and MgO and Au/MgO substrates

Spinel LiMn2O4 thin films have been prepared on MgO(110) and Au/MgO(110) substrates by a chemical solution deposition method. The interfaces between film and substrate were characterized by means of high-resolution transmission electron microscopy (HREM) as well as x-ray diffraction. Cross-sectional HREM observation revealed that LiMn2O4 films grew epitaxially on the MgO(110) and Au/MgO(110) substrates. In the LiMn2O4/MgO system, misfit dislocations formed to accommodate the lattice strain at the LiMn2O4/MgO interface. In the LiMn2O4/Au/MgO system, Au grew epitaxially on the MgO substrate with its surface facetted along {111} planes, probably because the surface energy of this plane is relatively low. The formation of these facets is considered to have a favorable effect on the growth of {111} planes of LiMn2O4 when deposited on the Au film.

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Microstructural and Ferroelectric Properties of a Chemical Solution Deposited Epitaxial PbZr0.5 Ti0.5O3 Thin Film on a SrRuO3/SrTiO3 Substrate

Journal of Materials Research ◽

10.1557/jmr.1999.0160 ◽

1999 ◽

Vol 14 (4) ◽

pp. 1190-1193 ◽

Cited By ~ 10

Author(s):

J. H. Kim ◽

A. T. Chien ◽

F. F. Lange ◽

L. Wills

Keyword(s):

Thin Film ◽

Ferroelectric Properties ◽

Chemical Solution ◽

X Ray Diffraction ◽

Solution Deposition ◽

Chemical Solution Deposition Method ◽

Transmission Electron ◽

Saturation Polarization ◽

Pzt Thin Film ◽

Relationship Of

Epitaxial PbZr0.5Ti0.5O3 (PZT) thin films were grown on top of a SrRuO3 epitaxial electrode layer on a (100) SrTiO3 substrate by the chemical solution deposition method at 600 °C. The microstructure of the PZT thin film was investigated by x-ray diffraction and transmission electron microscopy, and the ferroelectric properties were measured using the Ag/PZT/SRO capacitor structure. The PZT thin film has the epitaxial orientational relationship of (001) [010]PZT ║ (001) [010]SRO ║ (001) [010]STO with the substrate. The remnant (Pr ) and saturation polarization (Ps) density were measured to be Pr ~ 51.4 µC/cm2 and Ps ~ 62.1 µC/cm2 at 5 V, respectively. Ferroelectric fatigue measurements show that the net-switching polarization begins to drop (to 98% of its initial value) after 7 × 108 cycles.

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Growth of a-plane ZnO Thin Films on r-plane Sapphire by Plasma-assisted MBE

MRS Proceedings ◽

10.1557/proc-0891-ee10-01 ◽

2005 ◽

Vol 891 ◽

Cited By ~ 1

Author(s):

Junqing Q. Xie ◽

J. W. Dong ◽

A. Osinsky ◽

P. P. Chow ◽

Y. W. Heo ◽

...

Keyword(s):

Thin Films ◽

Lattice Mismatch ◽

Defect Density ◽

Zno Thin Films ◽

Rf Plasma ◽

Misfit Dislocations ◽

Epitaxial Relationship ◽

Cross Sectional ◽

Transmission Electron ◽

Small Lattice

ABSTRACTZnO thin films have been epitaxially grown on r-plane sapphire by RF-plasma-assisted molecular beam epitaxy. X-ray diffraction (XRD) and transmission electron microscopy (TEM) studies indicate that the epitaxial relationship between ZnO and r-plane sapphire is (1120)ZnO // (1102)sapphire and [0001]ZnO // [1101]sapphire. Atomic force microscopy measurements reveal islands extended along the sapphire [1101] direction. XRD omega rocking curves for the ZnO (1120) reflection measured either parallel or perpendicular to the island direction suggest the defect density anisotropy along these directions. Due to the small lattice mismatch along the ZnO [0001] direction, few misfit dislocations were observed at the ZnO/Al2O3 interface in the high-resolution cross-sectional TEM image with the zone axis along the ZnO [1100] direction.

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Structural Property Study for GeSn Thin Films

Materials ◽

10.3390/ma13163645 ◽

2020 ◽

Vol 13 (16) ◽

pp. 3645

Author(s):

Liyao Zhang ◽

Yuxin Song ◽

Nils von den Driesch ◽

Zhenpu Zhang ◽

Dan Buca ◽

...

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Transmission Electron Microscopy ◽

Molecular Beam ◽

Chemical Vapor ◽

Threading Dislocations ◽

X Ray Diffraction ◽

Cross Sectional ◽

X Ray ◽

Transmission Electron

The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE.

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EFFECT OF SUBSTRATE TEMPERATURE ON THE STRUCTURAL AND THE OPTICAL PROPERTIES OF CdTe (100) EPITAXIAL FILMS GROWN ON GaAs (100) SUBSTRATES

Surface Review and Letters ◽

10.1142/s0218625x07010202 ◽

2007 ◽

Vol 14 (04) ◽

pp. 755-759 ◽

Cited By ~ 1

Author(s):

D. U. LEE ◽

J. H. JUNG ◽

T. W. KIM ◽

H. S. LEE ◽

H. L. PARK ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Substrate Temperature ◽

Misfit Dislocations ◽

X Ray Diffraction ◽

Force Microscopy ◽

Atomic Force ◽

Transmission Electron ◽

Cdte Thin Films ◽

Xrd Patterns

CdTe thin films were grown on GaAs (100) substrates by using molecular beam epitaxy at various temperatures. The results of the X-ray diffraction (XRD) patterns showed that the orientation of the grown CdTe thin films was the (100) orientation. XRD patterns, atomic force microscopy images, high-resolution transmission electron microscopy (HRTEM) images, and photoluminescence spectra showed that the crystallinity of CdTe (100) epilayers grown on GaAs (100) substrates was improved by increasing the substrate temperature. HRTEM images showed that misfit dislocations existed at the CdTe / GaAs heterointerface. These results can help improve understanding of the substrate temperature effect on the structural and the optical properties of CdTe (100)/ GaAs (100) heterostructures.

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EFFECT OF Ce-DOPING ON STRUCTURAL AND ELECTRICAL PROPERTIES OF DIELECTRIC Bi2Ti2O7 THIN FILMS

Surface Review and Letters ◽

10.1142/s0218625x08012177 ◽

2008 ◽

Vol 15 (06) ◽

pp. 799-803 ◽

Cited By ~ 2

Author(s):

XIANGYANG JING ◽

BAIBIAO HUANG ◽

SHUSHAN YAO ◽

QI ZHANG ◽

ZEYAN WANG ◽

...

Keyword(s):

Thin Films ◽

Dissipation Factor ◽

X Ray Diffraction ◽

Solution Deposition ◽

Si Substrates ◽

Chemical Solution Deposition Method ◽

Structural And Electrical Properties ◽

Ce Substitution ◽

P Type ◽

Insulating Properties

Ce -doped Bi 2 Ti 2 O 7 thin films have been successfully prepared on P-type Si substrates by a chemical solution deposition method. The structural properties of the films were studied by X-ray diffraction. The phase of Ce -doped Bi 2 Ti 2 O 7 was more stable than that of Bi 2 Ti 2 O 7 without Ce substitution. The films exhibited good insulating properties at room temperature. The dielectric constant of the films annealed at 700°C at 100 kHz was 168 and the dissipation factor was 0.038. All these results showed that Ce -doped Bi 2 Ti 2 O 7 thin films could be used as storage capacitors in DRAM and MOS.

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Structural Transitions in Titanium/Amorphous-Silicon Multilayers

MRS Proceedings ◽

10.1557/proc-163-961 ◽

1989 ◽

Vol 163 ◽

Author(s):

E. Ma ◽

L.A. Clevenger ◽

C.V. Thompson ◽

R.R. DeAvillez ◽

K.N. Tu

Keyword(s):

Thin Films ◽

Exothermic Reaction ◽

Heat Of Formation ◽

Structural Transitions ◽

X Ray Diffraction ◽

Scanning Calorimetry ◽

Calorimetric Analysis ◽

Cross Sectional ◽

X Ray ◽

Transmission Electron

We report a quantitative investigation of silicidation in Ti/amorphous-Si thin-films using Differential Scanning Calorimetry (DSC), thin-film X-ray diffraction and Cross-sectional Transmission Electron Microscopy (XTEM). Multilayered thin films were used to facilitate calorimetric observation of the heat released or absorbed at many reacting interfaces. It is shown that calorimetric analysis, combined with structural analysis using X-ray diffraction and XTEM, is effective in providing both kinetic and thermodynamic information about interdiffusion reactions in thin films. The present paper describes experimental results for multilayers with an atomic concentration ratio of 1 Ti to 2 Si and modulation periods ranging from 10 to 60 nm. A thin amorphous titanium suicide layer was found to exist between the as-deposited Ti and a-Si layers. Heating the multilayer film caused the amorphous Ti-silicide to grow over a broad temperature range by an exothermic reaction. An endothermic relaxation occurs during the late stage of amorphous suicide growth. Heating to temperatures over 800K causes C49-TiSi2 to form at the a-si1icide/a-Si interface. Temperatures at which all the above structural transitions occur vary with modulation period. Analysis of the DSC data indicates an activation energy of 3.1 eV for the formation of C49-TiSio, which is attributed to both the nucleation and the early growth of the suicide. The heat of formation for C49-TiSi2 from a reaction of a-silicide and a-Si was found to be -30±5KJ/mol. Nucleation appears to be the controlling step in C49-TiSi2 formation.

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Preparation of epitaxial Pb(Mg1/3Ta2/3)O3 thin film by chemical solution deposition

Journal of Materials Research ◽

10.1557/jmr.2002.0418 ◽

2002 ◽

Vol 17 (11) ◽

pp. 2884-2887 ◽

Cited By ~ 1

Author(s):

D. S. Jeong ◽

J-H. Moon ◽

B-T. Lee ◽

J. H. Kim

Keyword(s):

Thin Films ◽

Chemical Solution Deposition ◽

Perovskite Phase ◽

Chemical Solution ◽

Solution Deposition ◽

Chemical Solution Deposition Method ◽

Phase Development ◽

Transmission Electron ◽

Powder Samples ◽

Relationship Of

Pb(Mg1/3Ta2/3)O3 (PMT) powders and heteroepitaxial thin films on (001) SrTiO3 (STO) substrates were prepared by the chemical solution deposition method. The phase development in PMT powders and thin films was investigated by x-ray diffraction, and the microstructure of PMT thin films was studied by transmission electron microscopy. Phase transformation from pyrochlore to perovskite in the PMT powder samples occurred in the temperature range of 700–800 °C, and perovskite phase was mainly observed in samples annealed above 800 °C. However, perovskite phase in PMT thin films on STO substrates was formed mainly in samples annealed as low as 750 °C/1 h, and it shows an epitaxial orientation relationship of [100](001)PMT∥[100](001)STO.

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Investigation of Hydrogen Storage Using Combinatorial Thin Films and IR Imaging

MRS Proceedings ◽

10.1557/proc-1042-s01-11 ◽

2007 ◽

Vol 1042 ◽

Author(s):

Hiroyuki Oguchi ◽

Ichiro Takeuchi ◽

Daniel Josell ◽

Edwin J Heilweil ◽

Leonid A Bendersky

Keyword(s):

Thin Films ◽

Hydrogen Absorption ◽

Compositional Variation ◽

X Ray Diffraction ◽

Cross Sectional ◽

Ir Camera ◽

Deposition Chamber ◽

X Ray ◽

Transmission Electron ◽

Beam Deposition

AbstractThree 100 nm-thick Mgx(TM)1-x (TM = Ni and Ti) composition spread thin films having compositional variation 0.4<x<0.95 and capped with a 5 nm-thick Pd layer were deposited in combinatorial electron-beam (e-beam) deposition chamber. Crystallinity of the films was characterized by scanning x-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM). Hydrogen absorption and desorption of the films were monitored with an infrared (IR) camera that could image a full area of the films. The observed changes in IR intensity due to hydrogen absorption/desorption demonstrated sensitivity of the method to the differences in compostion, microstructure and type of TM.

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Heteroepitaxial Bi2Sr2CaCu2Ox Superconducting thin films Deposited on LaA1O3 by Solid Phase Epitaxy and OMCVD

MRS Proceedings ◽

10.1557/proc-275-443 ◽

1992 ◽

Vol 275 ◽

Cited By ~ 1

Author(s):

J. Chen ◽

H. A. Lu ◽

F. DiMeo ◽

B. W. Wessels ◽

D. L. Schulz ◽

...

Keyword(s):

Thin Films ◽

Solid Phase ◽

Chemical Vapor ◽

Superconducting Thin Films ◽

Epitaxial Thin Films ◽

Solid Phase Epitaxy ◽

X Ray Diffraction ◽

Cross Sectional ◽

Transmission Electron ◽

Film Substrate

ABSTRACT-Heteroepitaxial superconducting Bi,Sr2CaCu2Ox (BSCCO 2212) thin films have been formed by solid phase epitaxy from amorphous films deposited on (100) LaA1O3 single crystal substrates by organometallic chemical vapor deposition. The epitaxial structure of the film is confirmed by x-ray diffraction including θ/2θ and Φ (in plane rotation) scans. Cross-sectional high resolution transmission electron microscopy indicates that the film-substrate interface is nearly atomically abrupt. Improvements in superconducting properties of the epitaxial thin films are noted in comparison to highly textured films deposited on MgO.

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Structure and Morphology of Epitaxially Intergrown (100)- and (116)-Oriented SrBi2Ta2O9 Ferroelectric Thin Films on SrLaGaO4(110) Substrates

MRS Proceedings ◽

10.1557/proc-688-c8.5.1 ◽

2001 ◽

Vol 688 ◽

Author(s):

H. N. Lee ◽

D. N. Zakharov ◽

P. Reiche ◽

R. Uecker ◽

D. Hesse

Keyword(s):

Thin Films ◽

Volume Fraction ◽

Scanning Force Microscopy ◽

Epitaxial Thin Films ◽

X Ray Diffraction ◽

Cross Sectional ◽

X Ray ◽

Transmission Electron ◽

Integrated Intensity ◽

Scanning Force

AbstractSrBi2Ta2O9 (SBT) epitaxial thin films having a mix of (100) and (116) orientations have been grown on SrLaGaO4(110) by pulsed laser deposition. X-ray diffraction θ2 θ and pole figure scans, and cross-sectional transmission electron microscopy (TEM) analyses revealed the presence of two epitaxial orientations, SBT(100) ∥ SLG(110); SBT[001] ∥ SLG[001] and SBT(116) ∥ SLG(110); SBT [110] ∥ SLG[001]. By calculating the integrated intensity of certain x-ray diffraction peaks, it was established that the crystallinity and the in-plane orientation of the (100) and (116) orientation are best at a substrate temperature of 775 °C and 788 °C, respectively, and that the volume fraction of the (100) orientation at about 770 °C reached about 60%. By scanning force microscopy and cross-sectional TEM investigations we found that the a-axisoriented grains are rounded and protrude out due to the rapid growth along the [110] direction, leading to a distinct difference of the surface morphology between (100)- and (116)-oriented grains.

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