Formation of U-type hexaferrites

2004 ◽  
Vol 19 (8) ◽  
pp. 2462-2470 ◽  
Author(s):  
Darja Lisjak ◽  
Darko Makovec ◽  
Miha Drofenik
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Stacking Faults ◽  
High Energy ◽  
Structural Defects ◽  
X Ray Diffraction ◽  
X Ray ◽  
Calcination Temperatures ◽  
Intermediate Phases ◽  
Transmission Electron

The formation of U-type hexaferrites with the composition Ba4B2Fe36O60 (B = Co, Ni, Zn) was studied. Samples were characterized by means of x-ray diffraction, electron microscopy (with energy-dispersive spectroscopy), and thermogravimetric and thermomagnetic analyses. U-hexaferrites are formed from the intermediate phases M-hexaferrite (BaFe12O19) and Y-hexaferrite (Ba2B2Fe12O22), which at the same time represent units in the U-hexaferrites’ crystal structure. The preparation of monophase U-hexaferrites was made possible by combining high-energy milling or chemical coprecipitation with a calcination at 1250–1300 °C. Structural defects, such as stacking faults, were observed in monophase samples with a high-resolution transmission electron microscope. The observed defects can be regarded as seeds for the formation of other hexaferrite phases after prolonged calcination times or higher calcination temperatures.

Stacking Faults in SiC Nanowires

2008 ◽  
Vol 8 (7) ◽  
pp. 3504-3510 ◽  
Author(s):  
K. L. Wallis ◽  
M. Wieligor ◽  
T. W. Zerda ◽  
S. Stelmakh ◽  
S. Gierlotka ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Stacking Faults ◽  
Multiwall Carbon Nanotubes ◽  
Structural Defects ◽  
X Ray Diffraction ◽  
Ir Spectrometry ◽  
X Ray ◽  
Sic Nanowires ◽  
Transmission Electron ◽  
Multiwall Carbon

SiC nanowires were obtained by a reaction between vapor silicon and multiwall carbon nanotubes, CNT, in vacuum at 1200 °C. Raman and IR spectrometry, X-ray diffraction and high resolution transmission electron microscopy, HRTEM, were used to characterize properties of SiC nanowires. Morphology and chemical composition of the nanowires was similar for all samples, but concentration of structural defects varied and depended on the origin of CNT. Stacking faults were characterized by HRTEM and Raman spectroscopy, and both techniques provided complementary results. Raman microscopy allowed studying structural defects inside individual nanowires. A thin layer of amorphous silicon carbide was detected on the surface of nanowires.

Ideal and Real Structure of Ti5O4(PO4)4: X-ray and HRTEM Investigations

1998 ◽  
Vol 54 (6) ◽  
pp. 722-731 ◽  
Author(s):  
F. Reinauer ◽  
R. Glaum
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Structure Refinement ◽  
Ideal Structure ◽  
Crystal Data ◽  
Asymmetric Unit ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
The Ideal

The crystal structure of pentatitanium tetraoxide tetrakis(phosphate), Ti5O4(PO4)4, has been determined and refined from X-ray diffraction single-crystal data [P212121 (No. 19), Z = 4, a = 12.8417 (12), b = 14.4195 (13), c = 7.4622 (9) Å (from Guinier photographs); conventional residual R 1 = 0.042 for 2556 Fo > 4σ(Fo ), R 1 = 0.057 for all 3276 independent reflections; 282 parameters; 29 atoms in the asymmetric unit of the ideal structure]. The structure is closely related to those of β-Fe2O(PO4)-type phosphates and synthetic lipscombite, Fe3(PO4)4(OH). While these consist of infinite chains of face-sharing MO6 octahedra, in pentatitanium tetraoxide tetrakis(phosphate) only five-eighths of the octahedral voids are occupied according to □3Ti5O4(PO4)4. Four of the five independent Ti4+O6 show high radial distortion [1.72 ≤ d(Ti−O) ≤ 2.39 Å] and a typical 1 + 4 + 1 distance distribution. The fifth Ti4+O6 is an almost regular octahedron [1.91 ≤ d(Ti−O) ≤ 1.98 Å]. Partial disorder of Ti4+ over the available octahedral voids is revealed by the X-ray structure refinement. High-resolution transmission electron microscopy (HRTEM) investigations confirm this result.

Characterization of Zn0.96Al0.02Ga0.02O Thermoelectric Material

2013 ◽  
Vol 802 ◽  
pp. 227-231
Author(s):  
Panida Pilasuta ◽  
Pennapa Muthitamongkol ◽  
Chanchana Thanachayanont ◽  
Tosawat Seetawan
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Single Phase ◽  
Hexagonal Structure ◽  
Hexagonal Crystal Structure ◽  
X Ray Diffraction ◽  
Hexagonal Crystal ◽  
X Ray ◽  
Transmission Electron

Crystal structure of Zn0.96Al0.02Ga0.02O was analyzed by X-Ray diffraction (XRD) technique and the microstructure was observed by scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The XRD results showed single phase and hexagonal structure a = b = 3.24982 Å, and c = 5.20661 Å. The SEM and TEM results showed the grain size of material arrangement changed after sintering and TEM diffraction pattern confirmed hexagonal crystal structure of Zn0.96Al0.02Ga0.02O after sintering.

Preparation and Luminescence Properties of ZnS: Cu/Fe Nanocrystalline

2014 ◽  
Vol 1033-1034 ◽  
pp. 1054-1057
Author(s):  
Xiang Zhang ◽  
Jin Liang Huang ◽  
Li Hua Li
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thioglycolic Acid ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zinc Blende ◽  
Transmission Electron ◽  
Fe Nanoparticles

ZnS: Cu/Fe nanocrystals were synthesized by hydrothermal method with thioglycolic acid as a stabilizer. The phases, grain size and luminescent properties of the nanocrystals were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and fluorescence photometer respectively. The results showed that ZnS: Cu/Fe nanoparticles have a particle size about 7nm and possess a cubic zinc blende crystal structure. The luminous intensity of ZnS: Cu/Fe nanocrystals was strongly when they were reacted at 140°C for 12 hours.

Characterization of β′ Precipitate Phase in Aged Mg-12Gd-2Y-0.5Sm-0.5Sb-0.5Zr Alloy

2011 ◽  
Vol 194-196 ◽  
pp. 1357-1360
Author(s):  
Ke Jie Li ◽  
Quan an Li ◽  
Xiao Hui Zhang
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Aged Alloy ◽  
Ordered Structure ◽  
Precipitate Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Long Period ◽  
Transmission Electron

The Mg-12Gd-2Y-0.5Sm-0.5Sb-0.5Zr alloy was prepared under flux protection. The morphology and crystal structure of β′ precipitate phases in aged alloy has been studied using transmission electron microscopy and X-ray diffraction. The orientation relationship between β′ precipitate and matrix could existed as [ 010]BαB// [ 00]Bβ′B, (01 0) BαB// (020)Bβ′B and (0001)BαB was coherent with (001)Bβ′B; [0001]BαB// [001]Bβ′B, (1 00)BαB// (240)Bβ′B and ( 010)BαB was coherent with (0A_,8EEA0)Bβ′B. The HREM images indicated that the β' precipitates have a long-period ordered structure at the same time.

FABRICATION AND CHARACTERISTICS OF ALN NANOWIRES

2001 ◽  
Vol 15 (30) ◽  
pp. 1455-1458 ◽  
Author(s):  
H. CHEN ◽  
X. K. LU ◽  
S. Q. ZHOU ◽  
X. H. HAO ◽  
Z. X. WANG
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Sublimation Method ◽  
Scanning Electron

Single phase AlN nanowires are fabricated by a sublimation method. They were characterized by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), typical selected area electron diffraction (SAED) and high-resolution transmission electron microscopy (HRTEM). The SEM and TEM images show that most of the nanowires have diameters of about 10–60 nm. The crystal structure of AlN nanowires revealed by XRD, SAED and HRTEM shows the AlN nanowires have a wurtzite structure.

Characterization Techniques For Laser-Annealed Polysilicon on Insulating Layers

1980 ◽  
Vol 1 ◽  
Author(s):  
J. T. Schott ◽  
J. J. Comer
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
High Energy ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Characterization Techniques ◽  
Cw Laser ◽  
Transmission Electron ◽  
Scanning Electron

ABSTRACTVarious characterization techniques are applied to pulsed and cw laser-annealed polysilicon layers deposited on oxide layers. The results are used to compare these techniques as to the type and completeness of information provided, as well as sample preparation requirements and general ease or difficulty of measurement. The techniques employed include scanning electron microscopy (SEM), electron channeling micrographs and selected area channeling patterns (SACP), reflection (high energy) electron diffraction (RHEED), transmission electron microscopy (TEM) and selected area diffraction (SAD), x-ray diffraction, optical techniques and etching techniques.

Prepare of the New Structure PbTiO3 Nanowires and the Study of the Reversible Bending

2013 ◽  
Vol 331 ◽  
pp. 522-526
Author(s):  
Jiang Wang ◽  
Jian Li ◽  
You Wen Wang
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stainless Steel ◽  
Hydrothermal Reaction ◽  
The Self ◽  
X Ray Diffraction ◽  
Electron Backscattered Diffraction ◽  
X Ray ◽  
Transmission Electron

When the self-made with Teflon lined with stainless steel reaction kettle is used to produce PbTiO3 nanowires with the adoption of hydrothermal reaction , PbTiO3 nanowires with new structure can be made when Pb/Ti equals 2.2. Observed through the Transmission Electron Microscopy (TEM), the bending feature of the PbTiO3 nanowires can be observed for several times when X-ray diffraction (XRD) and Electron Backscattered Diffraction (EBSD) are used to analyse and test the crystal structure of the nanowires. The result of the study shows that the degree of the bending of the PbTiO3 nanowires varies with the intensity of the electron beam from the Transmission Electron Microscopy, and its process can be reversible.

Impact of Sn ions on structural and electrical description of TiO2 nanoparticles

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Mutaz Salih ◽  
M. Khairy ◽  
Babiker Abdulkhair ◽  
M. G. Ghoniem ◽  
Nagwa Ibrahim ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Simple Procedure ◽  
High Energy ◽  
X Rays ◽  
X Ray Diffraction ◽  
Energy Storage Devices ◽  
X Ray ◽  
Storage Devices ◽  
Transmission Electron ◽  
High Energy Storage

Abstract In this paper, Sn-doped TiO2 nanomaterials with varying concentrations were manufactured through a simple procedure. The fabricated TiO2 and Sn loaded on TiO2 nanoparticles were studied using X-ray diffraction, scanning electron microscopy, transmission electron microscopy, energy dispersive X-rays, Fourier transform infrared spectroscopy, and resistance analyses. The benefits of dielectric constant and ac conductivity rise at high Sn loaded concentration on TiO2 nanoparticles. The enhanced electrical conductivity is seen for STO3 (3.5% Sn doped TiO2) and STO4 (5% Sn doped TiO2) specimens are apparently associated with the introduced high defect TiO2 lattice. Furthermore, the fabricated specimens’ obtained findings may be applied as possible candidates for high-energy storage devices. Moreover, proper for the manufacture of materials working at a higher frequency.

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