Local impedance and microchemical analysis of electrical heterogeneities in multilayer electroceramic devices

2007 ◽  
Vol 22 (12) ◽  
pp. 3507-3515 ◽  
Author(s):  
G.Y. Yang ◽  
P.J. Moses ◽  
E.C. Dickey ◽  
C.A. Randall
Keyword(s):  
Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Potential ◽  
Experimental Methodology ◽  
Electrical Measurements ◽  
Dual Beam ◽  
Transmission Electron ◽  
Voltage Contrast ◽  
Electron Energy Loss

We present an experimental methodology for locating and studying local failure sites in multilayer electroceramic devices at the submicron-length scale. In particular, the inhomogeneous degradation of multilayer ceramic capacitors is studied using a judicious combination of scanning electron microscopy (SEM), local-probe electrical measurements, focused ion beam (FIB) extraction, and transmission electron microscopy (TEM). Voltage-contrast SEM permits the identification of regions of different electrical potential within degraded multilayer devices. The local impedance from specific regions is measured in situ between a tungsten probe and the internal device electrodes, while impedance spectra are extracted for more detailed analysis. Because implementation occurs in dual-beam FIB/SEM, these locally defective sites can be extracted and thinned to electron transparency for further investigation by TEM. In this study, degraded sites in BaTiO3 multilayer capacitors are found to be associated with local oxygen deficiencies in BaTiO3, as measured by electron energy loss spectroscopy.

Alleviating Sample Charging during FIB Operation

2015 ◽  
Author(s):  
Q. Liu ◽  
H.B. Kor ◽  
Y.W. Siah ◽  
C.L. Gan
Keyword(s):  
Electron Microscopy ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Milling Process ◽  
Front Side ◽  
Dual Beam ◽  
Transmission Electron

Abstract Dual-beam focused ion beam (DB-FIB) system is widely used in the semiconductor industry to prepare cross-sections and transmission electron microscopy (TEM) lamellae, modify semiconductor devices and verify layout. One of the factors that limits its success rate is sample charging, which is caused by a lack of conductive path to discharge the accumulated charges. In this paper, an approach using an insitu micromanipulator was investigated to alleviate the charging effects. With this approach, a simple front side semiconductor device modification was carried out and the corresponding stage current was monitored to correlate to the milling process.

The Atomic, Electronic and Defect Structure of the Dynamically Formed Cu2O/Cu Interfaces

2007 ◽  
Vol 1026 ◽  
Author(s):  
Xuetian Han ◽  
Judith C. Yang
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Island Growth ◽  
Cross Sectional ◽  
Dual Beam ◽  
Transmission Electron ◽  
Initial Stage ◽  
Cu Film ◽  
High Resolution Tem ◽  
Electron Energy Loss

AbstractTo gain fundamental insights into metal oxidation, the dynamically formed Cu/Cu2O interface was investigated by cross-sectional TEM (Transmission Electron Microscopy) methods. Copper (001) films were oxidized in oxygen within a UHV chamber to create Cu2O islands that formed epitaxially with respect to the Cu film. The cross-sectional Cu2O/Cu TEM sample was prepared by dual beam (DB) focused ion beam (FIB) instrument and the interface was probed by high-resolution TEM (HREM) and electron energy loss spectrum (EELS). It is found that Cu2O {110} layer distance significantly decreases from the interface area to the bulk Cu2O region, which is about 3∼4 unit cell thickness in Cu2O side; while the {100Cu2O layer distance increases with increasing distance from the interface region. The chemical Cu/Cu2O interface thickness has been measured with EELS analysis, which is about 2nm where the oxidation state of Cu gradually changes from Cu0 to Cu+1. This transition region indicates the area where Cu/Cu2O interface exists and suggests the existence of metastable Cu oxides. The Cu2O island growth mechanism of predominantly anion interfacial diffusion at the initial stage oxidation has been proposed.

scholarly journals Focused Ion Beam in the Study of Biomaterials and Biological Matter

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Kathryn Grandfield ◽  
Håkan Engqvist
Keyword(s):  
Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Life Sciences ◽  
X Ray ◽  
The Past ◽  
Biological Matter ◽  
Dual Beam ◽  
Transmission Electron ◽  
Environmental Sem

The application of focused ion beam (FIB) techniques in the life sciences has progressed by leaps and bounds over the past decade. A once dedicated ion beam instrument, the focused ion beam today is generally coupled with a plethora of complementary tools such as dual-beam scanning electron microscopy (SEM), environmental SEM, energy dispersive X-ray spectroscopy (EDX), or cryogenic possibilities. All of these additions have contributed to the advancement of focused ion beam use in the study of biomaterials and biological matter. Biomaterials, cells, and their interfaces can be routinely imaged, analyzed, or prepared for techniques such as transmission electron microscopy (TEM) with this comprehensive tool. Herein, we review the uses, advances, and challenges associated with the application of FIB techniques to the life sciences, with particular emphasis on TEM preparation of biomaterials, biological matter, and their interfaces using FIB.

Application of Passive Voltage Contrast (PVC) to Dual Beam Focused Ion Beam (FIB) Based Sample Preparation for the Scanning/Transmission Electron Microscope (S/TEM)

2014 ◽  
Author(s):  
Corey Senowitz ◽  
Hieu Nguyen ◽  
Ruby Vollrath ◽  
Caiwen Yuan ◽  
Fati Rassolzadeh ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Sample Preparation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Scanning Transmission Electron Microscope ◽  
Dual Beam ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Voltage Contrast ◽  
Technology Nodes

Abstract The modern scanning transmission electron microscope (S/TEM) has become a key technology and is heavily utilized in advanced failure analysis (FA) labs. It is well equipped to analyze semiconductor device failures, even for the latest process technology nodes (20nm or less). However, the typical sample preparation process flow utilizes a dual beam focused ion beam (FIB) microscope for sample preparation, with the final sample end-pointing monitored using the scanning electron microscope (SEM) column. At the latest technology nodes, defect sizes can be on the order of the resolution limit for the SEM column. Passive voltage contrast (PVC) is an established FA technique for integrated circuit (IC) FA which can compensate for this resolution deficiency in some cases. In this paper, PVC is applied to end-pointing cross-sectional S/TEM samples on the structure or defect of interest to address the SEM resolution limitation.

Transmission Electron Microscopy Sample Preparation By Design-Based Recipe Writing in a DBFIB

2018 ◽  
Author(s):  
J. Demarest ◽  
B. Austin ◽  
J. Arjavac ◽  
M. Breton ◽  
M. Bergendahl ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Focused Ion Beam ◽  
Semiconductor Device ◽  
State Of The Art ◽  
Ion Beam ◽  
Critical Dimension ◽  
Pattern Match ◽  
Dual Beam ◽  
Transmission Electron

Abstract Transmission electron microscopy (TEM) sample can be routinely made at a sub 30nm thickness and specific features in semiconductor device design are on the order of 30nm and smaller. As a result, small changes in pattern match registration can significantly influence the success or failure of proper TEM sample placement as an approximately 15nm shift in lamella placement can easily cause the sample to be off the feature of interest. To address this issue, design based recipe writing is being developed on a dual beam focused ion beam platform. The intent is to have the tool read a GDS file and pattern match the design information to physical wafer images in a similar fashion to state-of-the-art critical dimension scanning electron microscopy operation. While the results are very encouraging, more work needs to be done to ensure a TEM sample of approximately 30nm thickness is placed at the desired location.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

Fin Level Defect Isolation Inside a FinFET Using Electron Beam Alteration of Current Flow

2017 ◽  
Author(s):  
H.J. Ryu ◽  
A.B. Shah ◽  
Y. Wang ◽  
W.-H. Chuang ◽  
T. Tong
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Focused Ion Beam ◽  
Current Flow ◽  
Ion Beam ◽  
The Body ◽  
Complete Understanding ◽  
Root Cause ◽  
Transmission Electron ◽  
Defect Isolation

Abstract When failure analysis is performed on a circuit composed of FinFETs, the degree of defect isolation, in some cases, requires isolation to the fin level inside the problematic FinFET for complete understanding of root cause. This work shows successful application of electron beam alteration of current flow combined with nanoprobing for precise isolation of a defect down to fin level. To understand the mechanism of the leakage, transmission electron microscopy (TEM) slice was made along the leaky drain contact (perpendicular to fin direction) by focused ion beam thinning and lift-out. TEM image shows contact and fin. Stacking fault was found in the body of the silicon fin highlighted by the technique described in this paper.

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