Crystal structure and optical properties of erbium- and neodymium-doped zirconia nanoparticles

2010 ◽  
Vol 25 (3) ◽  
pp. 500-509 ◽  
Author(s):  
Morgana M. Trexler ◽  
Dajie Zhang ◽  
Lisa Kelly ◽  
Jennifer Sample
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Monoclinic Phase ◽  
Near Infrared ◽  
Annealing Temperature ◽  
Dopant Concentration ◽  
Luminescence Spectra ◽  
Novel Method ◽  
Er Doped ◽  
Zirconia Nanoparticles

We report the synthesis, characterization, and optical properties of high-temperature stable lanthanide-doped luminescent zirconia nanoparticles via a novel method using carbon black as template. Dopant concentrations were varied from 1 to 5% of Er3+ or Nd3+ and annealing temperatures were varied from 650 to 1100 °C. The effects of the dopant concentration on crystal structure and emission properties were evaluated using x-ray powder diffraction and fluorescence spectroscopy, respectively. The lanthanide cations were found to stabilize the tetragonal phase of zirconia over the monoclinic phase as dopant concentration was increased to 5%. Increasing the annealing temperature to 1100 °C had the opposite effect and was found to stabilize the monoclinic phase of zirconia. The luminescence intensity of the Nd-doped zirconia was enhanced by two orders of magnitude over the undoped or Er-doped zirconia. In all cases, the luminescence spectra revealed increasing intensity with increasing annealing temperature. Zirconia luminescence at near-infrared wavelengths is likely caused by oxygen vacancies. This work demonstrates that the spectral signatures of fluorescent zirconia nanoparticles can be modified with small lanthanide dopant concentration. These particles will have utility in fluorescent sensors and tags, as well as new in refractory materials.

Effect of annealing temperature on optical properties of Er-doped ZnO films prepared by sol–gel method

2008 ◽  
Vol 148 (1-3) ◽  
pp. 35-39 ◽  
Author(s):  
Fanyong Ran ◽  
Lei Miao ◽  
Sakae Tanemura ◽  
Masaki Tanemura ◽  
Yongge Cao ◽  
...  
Keyword(s):  
Optical Properties ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Zno Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Doped Zno ◽  
Er Doped

scholarly journals Hydrothermally growth of TiO2 Nanorods, characterization and annealing temperature effect

2021 ◽  
Vol 48 (3) ◽  
Author(s):  
Nada Falih M ◽  
◽  
Saleem Azara Hussain ◽  
Shawki Khalaf Muhammad ◽  
Adel H. Omran Alkhayatt ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Surface Topography ◽  
Hydrothermal Method ◽  
Annealing Temperature ◽  
Tio2 Nanorods ◽  
Energy Band Gap ◽  
Conductive Glass ◽  
Photocatalytic Applications ◽  
Morphology Changes

Titanium dioxide TiO2 nanorods were successfully grown on conductive glass FTO substrate using the hydrothermal method at a temperature of 160 oC. Surface topography, structure, and optical characteristics were studied according to the influence of annealing temperature (450, 550, and 650) oC. The surface topography results reveal that the TiO2 had nanorods structure with a tetragonal shape, and the rod diameter increases from 84.2 nm to 116.6 nm with increasing the annealing temperature. The crystal structure of the grown TiO2 NRs exhibits a high crystallinity of polycrystalline nature with anatase and rutile phases. The preferential orientation was along (204) plane for anatase tetragonal structure. AFM image shows an intense edge, uniform surface morphology, and increased grain diameter with annealing temperature. The optical properties of TiO2 NRs were investigated, and the absorption edge shows a blue shifting as the annealing temperature increases when considering the crystallinity and morphology changes. The energy band gap was found to be lower than 3 eV, which can be attributed to the presence of anatase and rutile phases with an increment range from 2.72 to 2.86 nm alongside the increase in the annealing temperature. The results indicate that the adopted hydrothermal method and the synthesized TiO2 NRs were suitable for photovoltaic and photocatalytic applications.

Characterizations and Crystal Structure of Er Ions Doped Titania Nanofibers

2012 ◽  
Vol 468-471 ◽  
pp. 294-297
Author(s):  
Ying Lu ◽  
Jin Zhong Hong ◽  
Chang Lu Shao ◽  
Xin Zhang ◽  
Ming Xing Lv ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Composite Nanofibers ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Novel Method ◽  
Doped Titania ◽  
Er Doped ◽  
Scanning Electron ◽  
Titania Nanofibers

A simple and novel method to synthesize Er ion doped titania was investigated. In this work, Er-doped titania nanofibers were prepared by the sol-gel method. Characterizations of the nanofibers were done by X-ray diffraction, scanning electron microscopy. The results suggest that crystal structures of Er-doped titania composite nanofibers were changed due to Er ions disturbing.

Cu2S nanosheets for ultrashort pulse generation in the near-infrared region

Nanoscale ◽  
2019 ◽  
Vol 11 (13) ◽  
pp. 6045-6051 ◽  
Author(s):  
Zhanqiang Hui ◽  
Wenxiong Xu ◽  
Xiaohui Li ◽  
Penglai Guo ◽  
Ying Zhang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ultrashort Pulse ◽  
Nonlinear Optical ◽  
Near Infrared ◽  
Infrared Region ◽  
Pulse Generation ◽  
Cuprous Sulfide ◽  
Near Infrared Region ◽  
Er Doped ◽  
Ultrashort Pulse Generation

The nonlinear optical properties of cuprous sulfide have been studied. The successful application in Er-doped fiber laser has proved cuprous sulfide as a novel, promising materials in the field of ultra-fast photonics.

Electronic Properties and Their Relations to Optical Properties in Rare Earth Doped III-V Semiconductors

1993 ◽  
Vol 301 ◽  
Author(s):  
Akihito Taguchi ◽  
Kenichiro Takahei ◽  
Jyoji Nakata
Keyword(s):  
Optical Properties ◽  
Rare Earth ◽  
Chemical Vapor ◽  
Luminescence Spectra ◽  
Energy Transfer Mechanism ◽  
Relaxation Energy ◽  
Rutherford Back Scattering ◽  
Measurement Results ◽  
Electron Hole Pair ◽  
Er Doped

ABSTRACTWe discuss the energy transfer mechanism between rare-earth 4f-shells and III-V semiconductor hosts. For Yb-doped InP, we have proposed an excitation and relaxation model, which explains experimental results for the electronic and optical properties. The Yb 4f-shell is excited by a recombination of an electron and a hole at an electron trap formed by Yb, which is located near the bottom of the conduction band of InP. At high temperatures, the relaxation energy of the Yb 4f-shell is back transferred as a host electron-hole pair, resulting in Yb luminescence quenching. We have found that Er-doped GaAs samples grown by metalorganic chemical vapor deposition contain as much C as Er. Rutherford back scattering and electronic property measurement results suggested that most of the Er atoms form complexes with C atoms, and these complexes are not electrically active. Such samples showed complicated Er 4f-shell luminescence spectra. To obtain a simple Er luminescence spectrum with a high peak intensity, O was intentionally doped with Er. Er-O complexes seemed to be formed in GaAs and these are responsible for simple and strong 4f-shell luminescence.

Optical and Structural Properties of Er3+-Doped GaN Grown by MBE

1998 ◽  
Vol 537 ◽  
Author(s):  
R. H. Birkhahn ◽  
R. Hudgins ◽  
D. S. Lee ◽  
B.K. Lee ◽  
A. J. Steckl ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Near Infrared ◽  
Depth Profiling ◽  
Oxygen Impurity ◽  
Gas Source ◽  
Infrared Wavelengths ◽  
Er Doped ◽  
Sims Depth Profiling

AbstractWe report the morphological and compositional characteristics of Er-doped GaN grown by MBE on Si(111) substrates and their effect on optical properties. The GaN was grown by molecular beam epitaxy using solid sources (for Ga and Er) and a plasma gas source for N2. The films emit by photoexcitation in the visible and near infrared wavelengths from the Er atomic levels. The morphology of the GaN:Er films was examined by AFM. Composition was determined by SIMS depth profiling that revealed a large Er concentration at 4.5 × 1021 atoms/cm3 accompanied by a high oxygen impurity concentration.

scholarly journals Optical and Structural Properties of Er3+-Doped GaN Grown by MBE

1999 ◽  
Vol 4 (S1) ◽  
pp. 435-440 ◽  
Author(s):  
R. H. Birkhahn ◽  
R. Hudgins ◽  
D. S. Lee ◽  
B.K. Lee ◽  
A. J. Steckl ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Near Infrared ◽  
Depth Profiling ◽  
Oxygen Impurity ◽  
Gas Source ◽  
Infrared Wavelengths ◽  
Er Doped ◽  
Sims Depth Profiling

We report the morphological and compositional characteristics of Er-doped GaN grown by MBE on Si(111) substrates and their effect on optical properties. The GaN was grown by molecular beam epitaxy using solid sources (for Ga and Er) and a plasma gas source for N2. The films emit by photoexcitation in the visible and near infrared wavelengths from the Er atomic levels. The morphology of the GaN:Er films was examined by AFM. Composition was determined by SIMS depth profiling that revealed a large Er concentration at 4.5×1021 atoms/cm3 accompanied by a high oxygen impurity concentration.

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