scholarly journals Correlation of nanoindentation-induced deformation microstructures in diamondlike carbon coatings on silicon substrates with simulation studies

2010 ◽  
Vol 25 (5) ◽  
pp. 910-920 ◽  
Author(s):  
Ayesha J. Haq ◽  
Paul R. Munroe ◽  
Mark Hoffman ◽  
Phil J. Martin ◽  
Avi Bendavid
Keyword(s):  
Shear Stress ◽  
Silicon Substrate ◽  
Hydrostatic Stress ◽  
Dislocation Motion ◽  
Indentation Load ◽  
Cross Sectional ◽  
Carbon Coatings ◽  
Si Substrates ◽  
Transmission Electron ◽  
Diamondlike Carbon

The effect of the presence of diamondlike carbon coatings deposited on (100) Si substrates on the deformation mechanisms operating in the silicon substrate during contact loading have been investigated by both cross-sectional transmission electron microscopy and modeling of the stresses generated beneath the indenter tip. The observed subsurface microstructures were correlated to the Tresca shear stress and the hydrostatic stress generated in the silicon substrate beneath the indenter tip. The presence of the coating altered the stresses generated in the substrate, and changed the deformation mechanism from one of principally phase transformation in uncoated Si to predominantly dislocation motion in the silicon substrate for the diamondlike C–Si system. The magnitude and distribution of the shear and hydrostatic stresses in the substrate were found to depend on both the indentation load and the thickness of the coating. Furthermore, the observed width of deformation, parallel to the interface, which was found to increase with coating thickness, was correlated to the wider distribution of the Tresca shear stress in the substrate brought about by the presence of the coating.

Direct Deposition Reactions Between Nickel and Silicon Substrates

1993 ◽  
Vol 311 ◽  
Author(s):  
Lin Zhang ◽  
Douglas G. Ivey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Deposition Rates ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

Cross-Sectional TEM Studies of Indentation-Induced Phase Transformations in Si: Indenter Angle Effects

2004 ◽  
Vol 843 ◽  
Author(s):  
Songqing Wen ◽  
James Bentley ◽  
Jae-il Jang ◽  
G. M. Pharr
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Indentation Load ◽  
High Load ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron ◽  
Cube Corner ◽  
Displacement Behavior ◽  
Si Wafer

ABSTRACTNanoindentations were made on a (100) single crystal Si wafer at room temperature with a series of triangular pyramidal indenters having centerline-to-face angles ranging from 35° to 85°. Indentations produced at high (80 mN) and low (10 mN) loads were examined in plan-view by scanning electron microscopy and in cross-section by transmission electron microscopy. Microstructural observations were correlated with the indentation load-displacement behavior. Cracking and extrusion are more prevalent for sharp indenters with small centerline-to-face angles, regardless of the load. At low loads, the transformed material is amorphous silicon for all indenter angles. For Berkovich indentations made at high-load, the transformed material is a nanocrystalline mix of Si-I and Si-III/Si-XII, as confirmed by selected area diffraction. Extrusion of material at high loads for the cube-corner indenter reduces the volume of transformed material remaining underneath the indenter, thereby eliminating the pop-out in the unloading curve.

Nanomechanical Properties and Nanostructure of CMG and CMP Machined Si Substrates

2008 ◽  
Vol 381-382 ◽  
pp. 525-528 ◽  
Author(s):  
B.L. Wang ◽  
Han Huang ◽  
Jin Zou ◽  
Li Bo Zhou
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Substrate Surface ◽  
Transmission Electron Microscopy Analysis ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Electron Microscopy Analysis

Silicon (100) substrates machined by chemo-mechanical-grinding (CMG) and chemicalmechanical- polishing (CMP) were investigated using atomic force microscopy, cross-sectional transmission electron microscopy and nanoindentation. It was found that the substrate surface after CMG was slightly better than machined by CMP in terms of roughness. The transmission electron microscopy analysis showed that the CMG-generated subsurface was defect-free, but the CMP specimen had a crystalline layer of about 4 nm in thickness on the top of the silicon lattice as evidenced by the extra diffraction spots. Nanoindentation results indicated that there exists a slight difference in mechanical properties between the CMG and CMP machined substrates.

Fracture toughness of diamondlike carbon coatings

1999 ◽  
Vol 14 (5) ◽  
pp. 2173-2180 ◽  
Author(s):  
M. Nastasi ◽  
P. Kodali ◽  
K. C. Walter ◽  
J. D. Embury ◽  
R. Raj ◽  
...  
Keyword(s):  
Fracture Toughness ◽  
Crack Length ◽  
Total Work ◽  
Carbon Coatings ◽  
Dlc Coatings ◽  
Si Substrates ◽  
Dlc Coating ◽  
Diamondlike Carbon ◽  
Radial Cracks ◽  
Work Of Fracture

The fracture behavior of diamondlike carbon (DLC) coatings on Si substrates has been examined using microindentation. The presence of DLC coatings reduces the radial crack length to less than one-half the crack length observed in uncoated Si at the same indenter load. A total work of fracture analysis of the radial cracks formed in the DLC-coating/Si-substrate system gives 10.1 MPa m1/2 as the average fracture toughness for DLC alone. A bond-breaking calculation for DLC suggests that the elastic limit fracture toughness should be 1.5 MPa (m)1/2. The higher value obtained from experiment and total work analysis suggests that plastic work and/or a tortuous path crack evolution occurred during DLC fracture process.

TiSi2 Integrity within a Doped Silicide Process Step

1992 ◽  
Vol 279 ◽  
Author(s):  
G. M. Crean ◽  
P. D. Cole ◽  
J. Stoemenos
Keyword(s):  
Thin Films ◽  
Sheet Resistance ◽  
Silicon Substrate ◽  
Thermal Processing ◽  
Rutherford Backscattering Spectrometry ◽  
Cross Sectional ◽  
Process Step ◽  
Thermal Budget ◽  
Transmission Electron ◽  
Junction Formation

ABSTRACTDegradation of arsenic implanted titanium suicide (TiSi2) thin films as a result of thermal processing for shallow junction formation is investigated. Significant arsenic diffusion from the suicide overlayer into the silicon substrate has been detected by Rutherford Backscattering Spectrometry at drive-in temperatures > 1050°C. Cross-sectional transmission electron micrographs have shown the suicide film become increasingly non-uniform as the thermal budget increases, ultimately leading to discontinuities forming in the suicide film. This observed degradation of the titanium suicide film is also supported by sheet resistance measurements which show the film to degrade significantly above a threshold thermal budget

MBE Growth of GaAs on Si (100)

1987 ◽  
Vol 91 ◽  
Author(s):  
J. S. Ahearn ◽  
P. Uppal
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Mbe Growth ◽  
Si Substrates ◽  
Gaas On Si ◽  
Linear Defects ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Dislocation Annihilation

ABSTRACTMolecular beam epitaxy (MBE) growth of GaAs on Si was investigated for three Si substrate orientations: exact (100), 4° off (100) towards (011), and 4° off towards (010). Cross-sectional transmission electron microscopy (X-TEM) analysis indicated a high dislocation density at the GaAs-Si interface that decreased away from the interface. Changing the orientation significantly affected the dislocation arrangement in the films.In the exact (100) case, dislocations from different glide systems formed pyramids, and dislocation annihilation resulted in linear defects propagating to the bottom of pits on the GaAs surface. On Si substrates oriented 4° off of (100), dislocation pyramids were not observed which we attribute to the different stresses acting on different glide systems. Planar TEM sections indicated that the dislocation densities at th surfaces of the 2-μm-thick films were 8 × 108 /cm2 for exact (100), 3.4 × 108/cm2 for 4° off (100) towards (010), and 1.6 × 108/cm2 for 4° off towards (011) orientations. When etching was used to evaluate anti-phase domain (APD) density, the exact (100) and off (100) orientations toward (010) showed APD's in some areas; off (100) toward (011) orientations were apparently APD-free. Results of photoluminescence (PL) spectroscopy of each of the wafers showed marked differences in peak intensities for the different orientations. Secondary ion mass spectrometry (SIMS) showed that roughly 1/4 of a monolayer of Si was incorporated in the GaAs, mostly concentrated in the first 250 nm near the GaAs-Si interface.

Epitaxial Ferroelectric Heterostructures of Isotropic Metallc Oxide (SrRuO3) and Pb(Zr0.52Ti0.48)O3

1993 ◽  
Vol 310 ◽  
Author(s):  
C. B. Eom ◽  
R.B. Van Dover ◽  
Julia M. Phillips ◽  
R.M. Fleming ◽  
R.J. Cava ◽  
...  
Keyword(s):  
X Ray Diffraction ◽  
Metallic Oxide ◽  
High Crystalline Quality ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Fatigue Characteristics ◽  
Large Remnant Polarization ◽  
Coherent Interfaces

AbstractWe have fabricated epitaxial ferroelectric heterostructures of isotropic metallic oxide (SrRuO3) and ferroelectric thin films [SrRuO3/Pb(Zr0.52Ti0.48)O3 /SrRuO3] on (100) SrTiO3 and YSZ buffer layered Si substrates by 90° off-axis sputtering. These heterostructures have high crystalline quality and coherent interfaces as revealed by X-ray diffraction, Rutherford backscattering spectroscopy and cross-sectional transmission electron microscopy. The ferroelectric layers exhibit superior fatigue characteristics over 1010 cycles with large remnant polarization.

Stress and Microstructure Evolution in Compositionally Graded Al1-xGaxN Buffer Layers for GaN Growth on Si

2005 ◽  
Vol 892 ◽  
Author(s):  
Xiaojun Weng ◽  
Srinivasan Raghavan ◽  
Elizabeth C Dickey ◽  
Joan M Redwing
Keyword(s):  
Buffer Layer ◽  
Compressive Stress ◽  
Microstructure Evolution ◽  
Buffer Layers ◽  
Threading Dislocation ◽  
Cross Sectional ◽  
Si Substrates ◽  
Transmission Electron ◽  
Dislocation Annihilation

AbstractWe have studied the evolution of stress and microstructure of compositionally graded Al1-xGaxN (0 ≤ x ≤1) buffer layers on (111) Si substrates with varying thicknesses. In-situ stress measurements reveal a tensile-to-compressive stress transition that occurs near the half-thickness in each buffer layer. Cross-sectional transmission electron microscopy (TEM) shows a significant reduction in threading dislocation (TD) density in the top half of the buffer layer, suggesting that the compressive stress enhances the threading dislocation annihilation. The composition of the buffer layers varies linearly with thickness, as determined by X-ray energy dispersive spectrometry (XEDS). The composition grading-induced compressive stress offsets the tensile stress introduced by microstructure evolution, thus yielding a tensile-to-compressive stress transition at x ≈ 0.5.

Fabrication and Characterization of Functionally Gradient Diamondlike Carbon Coatings

1999 ◽  
Vol 594 ◽  
Author(s):  
Q. Wei ◽  
A.K. Sharma ◽  
S. Yamolenko ◽  
J. Sankar ◽  
J. Narayan
Keyword(s):  
Substrate Surface ◽  
High Vacuum ◽  
Functionally Graded ◽  
Carbon Coatings ◽  
Bonding Structure ◽  
Functionally Gradient ◽  
Transmission Electron ◽  
Alternative Approach ◽  
Diamondlike Carbon

AbstractPure diamondlike carbon thin films largely bonded by four-fold coordination suffer from a large internal compressive stress that gives rise to a serious adhesion problem. In this work, functionally gradient (FG) diamondlike carbon thin coatings were prepared by pulsed laser deposition in a high vacuum chamber as an alternative approach to address the adhesion problem of diamondlike films. Copper, silver and titanium were incorporated into the growing films with their concentration as a function of the distance from the substrate surface. The top of the thin coating is pure DLC of about 400 nm in thickness. The total thickness of the functionally graded superhard DLC coatings can exceed 1.0 μm without buckling. Visible micro-Raman spectroscopy was used to characterize the bonding structure of the layers which contain alloy atoms. High resolution transmission electron microscopy was employed to study the microstructure of the coatings. Nanoscale mechanical characterizations using Nanoindenter XP™ were carried out to study the mechanical behavior of the functionally gradient DLC films.

Indentation of AlN/CrN Multilayers from Room Temperature to 400 °C

2005 ◽  
Vol 492-493 ◽  
pp. 335-340 ◽  
Author(s):  
F. Giuliani ◽  
A. Goruppa ◽  
S.J. Lloyd ◽  
Dennis Teer ◽  
W.J. Clegg
Keyword(s):  
Multilayer Structure ◽  
Room Temperature ◽  
Deformation Behaviour ◽  
Dislocation Motion ◽  
Effect Of Temperature ◽  
Columnar Microstructure ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

Observations elsewhere have shown that multilayer structures with layers ~10 nm thick can be harder than monolithic ones. Here we see whether these effects can be observed at high temperatures and investigate the effect of temperature on the manner of deformation. The hardness of an AlN/CrN multilayer structure with a range of wavelengths from 6-200 nm has been measured at temperatures from room temperature to 400 oC. The changes in hardness have been related to the deformation behaviour observed by cross-sectional transmission electron microscopy and atomic force microscopy. These observations suggest that the mechanical properties of the coatings are dominated by the refinement in the columnar microstructure rather than directly by an effect of the layer interfaces on dislocation motion.

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