Three-Step Deposition Method for Improvement of the Dielectric Properties of BST Thin Films

2012 ◽  
Vol 1397 ◽  
Author(s):  
H. Liu ◽  
V. Avrutin ◽  
C. Zhu ◽  
J.H. Leach ◽  
E. Rowe ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Step Method ◽  
Bst Thin Films ◽  
Different Temperatures ◽  
Different Strains ◽  
High Dielectric

ABSTRACTEpitaixal Ba0.5Sr0.5TiO3 (BST) thin films were grown on SrTiO3 (STO) and DyScO3 substrates by radio-frequency magnetron sputtering system using three-step method which involves a relatively low-temperature (573-773 K) growth of a BST interlayer sandwiched between two BST layers deposited at a high substrate temperature of 1068 K. X-ray diffraction measurement showed different strains on the films with interlayers grown at different temperatures. Post-growth thermal treatment reduced film strain to a great extent (the film strain of a tri-layer film with a 773 K grown interlayer is only -0.001). Comparing with the control films grown at high temperature, three-step technique improved the dielectric properties, especially increased dielectric constant by 60% for BST/STO and 31% for BST/DyScO3, respectively. High dielectric constant of 1631.4 and its tuning of 36.7% were achieved on the BST/STO with an interlayer grown on 773 K.

Effect of Pb Volatilization on Dielectric Properties of 0.77PbMg1/3(Nb0.9Ta0.1)2/3O3-0.23PbTiO3

2003 ◽  
Vol 17 (18n20) ◽  
pp. 3738-3744 ◽  
Author(s):  
C. Zhang ◽  
J. T. Wang ◽  
M. Q. Qian ◽  
T. P. Chen ◽  
I. Akujobi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Lead Magnesium Niobate ◽  
X Ray Diffraction ◽  
Low Dielectric ◽  
Dielectric Constant And Loss ◽  
Different Temperatures ◽  
Lead Magnesium ◽  
High Dielectric ◽  
The Cost

Lead magnesium niobate-lead titanate (PMN-PT) is an intriguing candidate for applications in many electronic devices such as multi-layer capacitors, electro-mechanical transducers etc. because of its high dielectric constant, low dielectric loss and high strain near the Curie temperature. As an extension of our previous work on Ta-doped PMNT-PT aimed at optimizing the performance and reducing the cost, this paper focuses on the effect of Pb volatilization on the dielectric properties of 0.77 Pb ( Mg 1/3( Nb 0.9 Ta 0.1)2/3) O 3-0.23 PbTiO 3. The dielectric constant and loss of the samples are measured at different frequencies and different temperatures. The phase purity of this compound is determined by X-ray diffraction pattern. It is found that the volatilization during sintering does influence the phase formation and dielectric properties. The best condition is sintering with 0.5 g extra PbO around a 4 g PMNT-PT sample.

Effect of Platinum Substitution on the Microstructures and Dielectric Relaxation of CaCu3Ti4O12 Ceramics

2013 ◽  
Vol 802 ◽  
pp. 134-138 ◽  
Author(s):  
Worawut Makcharoen
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Loss Tangent ◽  
Room Temperature ◽  
High Dielectric Constant ◽  
Ferroelectric Materials ◽  
X Ray Diffraction ◽  
High Loss ◽  
Internal Barrier Layer Capacitor ◽  
High Dielectric

The CaCu3Ti4O12(CCTO) has the advantage for the various applications especially for capacitive elements in microelectronic devices over the ferroelectric materials including BaTiO3. CCTO is a ceramic compound with a high dielectric constant but it has a high loss tangent at room temperature. In this work, the Influences of PtO2doping on the dielectric properties of CaCu3Ti4O12(CCTO) ceramics were investigate. The ceramics CCTO and PtO2doping CCTO were studied by X- ray diffraction, scanning electron microscopy. The dielectric properties have been measured as a function of temperature and frequency range 0.1 - 500 kHz. The XRD shows the CCTO structure does not changes after doping with platinum. The results show that PtO2doped can reduce the mean grain sizes of CCTO, but the dielectric constant still remained a height. The samples of 2.0 mol% Pt-doped have exhibited high dielectric constant of about 22,000 and the loss tangent about 0.7 at room temperature and frequency at 10 kHz. The reduced of the loss tangent could be interpreted with the internal barrier layer capacitor model (IBLC)

High dielectric constant BaxSr1-xTiO3 (BST) thin films made by mocvd techniques for dram applications

1997 ◽  
Vol 17 (1-4) ◽  
pp. 127-139 ◽  
Author(s):  
Tingkai Li ◽  
Pete Zawadzki ◽  
Rick A. Stall ◽  
Shaohua Liang ◽  
Yicheng Lu
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Bst Thin Films ◽  
High Dielectric

Electrical Characteristics of Doped and Undoped High Dielectric Constant BCTZ Thin Films

2001 ◽  
Vol 666 ◽  
Author(s):  
Woo-Chul Yi ◽  
T. S. Kalkur ◽  
Elliott Philofsky ◽  
Lee Kammerdiner
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Structural Characteristics ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Current Voltage ◽  
Metal Organic ◽  
High Dielectric

ABSTRACTBa1−xCaxTi1-yZryO3 materials have very high dielectric constant (up to 30,000) in the bulk form. In this paper, we are presenting the electrical and structural characteristics of undoped and 0.4% Mg-doped Ba0.96Ca0.04Ti0.84Zr0.16O3 (BCTZ) thin films on Pt/Ti/SiO2/Si substrates. The BCTZ films were deposited by spin on metal-organic decomposition method and annealed at a temperature 600-900°C in oxygen environment. The annealed thin films were characterized by X-ray diffraction. The electrical characteristics of the annealed thin films were analyzed by capacitance–voltage and current–voltage measurements. The as-annealed thin films were post- annealed in nitrogen and oxygen environments and the effect of post-annealing on their electrical characteristics were also presented in conjunction with 0.4% Mg doping effect of BCTZ thin films for possible high dielectric constant material applications.

Y-Doping Effects on the Dielectric Behavior of RF-Sputtered BST Thin Films

2004 ◽  
Vol 833 ◽  
Author(s):  
Ruey-Ven Wang ◽  
Paul C. McIntyre ◽  
John D. Baniecki ◽  
Kenji Nomura ◽  
Takeshi Shioga ◽  
...  
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Strain Analysis ◽  
Deposition Process ◽  
Dielectric Behavior ◽  
X Ray Diffraction ◽  
Bst Thin Films ◽  
Inductively Coupled ◽  
Doping Effects ◽  
High Dielectric

AbstractHigh dielectric constant, perovskite-structure materials, such as barium strontium titanate (BST), have been widely investigated for use in GHz LSI decoupling capacitor applications. In addition to modifying deposition process parameters, such as increasing deposition temperature, doping may be a viable way to increase permittivity and tunability in BST thin films without increasing the thermal budget. In this research, the effects of Y dopants on the dielectric behavior of RF-sputtered BST thin films have been systematically investigated. The BST thin films were deposited using ceramic targets with different compositions of yttrium oxide dopant. With Y-doping concentration of ∼ 1.3 at.%, the permittivity at around zero electrical fields can be increased by more than 70% compared to nominally undoped BST thin films produced under the same deposition conditions. Based on x-ray diffraction strain analysis and inductively-coupled plasma composition measurements, the correlations among the dopant composition, BST film elastic strain and dielectric behavior have been systematically studied.

scholarly journals Effect of Transition Metal on Structural and Dielectric Properties of Mg0.5Tm0.5Fe2O4 (Tm = Zn and Cu) System

2021 ◽  
Author(s):  
Pallavi Saxena ◽  
Anand Yadav
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Interfacial Polarization ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
High Frequencies ◽  
X Ray ◽  
Cubic Structure ◽  
High Dielectric

This study explored the structural and dielectric features of Mg0.5Tm0.5Fe2O4 (Tm = Zn and Cu) that were synthesized by the Solid-state reaction (SSR) method. The X-ray powder diffraction (XRD) analysis reveals that the prepared samples are single-phase cubic structure without any impurity. Rietveld-refined X-ray diffraction results reveal the formation of cubic structure and all the peaks of Mg0.5Zn0.5Fe2O4 and Mg0.5Cu0.5Fe2O4 are perfectly indexed in the cubic (Fd-3 m) structure. Dielectric constant and dielectric loss variation with frequency were also explored. Both decrease when the relevant alternating field is increasing and become constant at high frequencies which reflects the important role of interfacial polarization. Furthermore, the Mg0.5Cu0.5Fe2O4 having the smallest crystallite size (~ 44.73 nm) has a high dielectric constant (~ 4.41 × 104) value as compare to Mg0.5Zn0.5Fe2O4.

Mechanical and dielectric properties of crystalline poly(arylene ether nitrile) copolymers

2018 ◽  
Vol 31 (3) ◽  
pp. 310-320 ◽  
Author(s):  
Yajie Wang ◽  
Yong You ◽  
Ling Tu ◽  
Weibin Hu ◽  
Lifen Tong ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Treatment Time ◽  
Thermal Analyses ◽  
Constant Time ◽  
Condensation Polymerization ◽  
Arylene Ether ◽  
Different Temperatures ◽  
Effect Of Treatment ◽  
High Dielectric

Poly(arylene ether nitrile) (PEN) copolymers (HQ/RS-PEN) containing different proportions of hydroquinone (HQ-PEN) block and resorcinol (RS-PEN) block were synthesized, and their crystalline, mechanical, and dielectric properties were investigated. Three HQ/RS-PEN copolymers with 10%, 20%, and 30% of RS-PEN blocks were prepared via condensation polymerization of HQ and RS with 2,6-dichlorobenzonitrile. The PEN copolymers were characterized and confirmed by Fourier transform infrared spectroscopy, intrinsic viscosity, and thermal analyses. With the addition of RS-PEN block, the flexibility of PEN copolymers was increased. In addition, even though the high loading content of RS-PEN block was incorporated, the PEN copolymers still exhibited relatively high dielectric constant, whereas the dielectric loss decreased. Furthermore, to investigate the effect of treatment time and temperature on the physical properties of crystalline PEN copolymers, HQ/RS-PEN20 was isothermally treated at different temperatures (280°C, 300°C, 310°C, 320°C, and 330°C) for a constant time and at a constant time for different hours (1, 2, 3, 4, and 5 h). After the optimization of the crystallization of HQ/RS-PEN polymer, excellent mechanical and dielectric properties of copolymers were obtained. The results showed that when isothermally treated at 320°C for 2 h, the HQ/RS-PEN20 showed optimal properties of tensile strength of 117.6 MPa and dielectric constant of 4.07 at 1 kHz.

Effects of LSCO Buffer Layer on the Microstructure and Dielectric Properties of Ba0.6Sr0.4TiO3 Films Prepared by Sol-gel Methods

2009 ◽  
Vol 1199 ◽  
Author(s):  
Songwei Han ◽  
Shengwen Yu ◽  
Jinrong Cheng
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Sol Gel ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Random Orientation ◽  
X Ray ◽  
Bst Thin Films ◽  
Structure And Morphology ◽  
Bst Films

AbstractIn this work, Ba0.6Sr0.4TiO3(BST) thin films were deposited on Ti substrates using conductive La0.5Sr0.5CoO3 (LCSO) as buffer layers. Both BST and LSCO films were prepared by sol-gel methods. The structure and morphology of BST and LSCO films were analyzed by X-ray diffraction (XRD). XRD results show that both BST and LSCO films have perovskite structure with random orientation. The dielectric properties of BST films were dependent on the thickness of LSCO buffer layers. Upon using LSCO buffer layers, the dielectric properties of BST films were significantly improved. The dielectric constant, tunability, and dielectric loss of BST thin films for LSCO of 150 nm achieved about 453, 0.032 and 31.26% respectively.

Dielectric Properties of BST/(Y2O3)x(ZrO2)1-x/BST Trilayer Films

2011 ◽  
Vol 1292 ◽  
Author(s):  
Santosh K. Sahoo ◽  
D. Misra
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Dielectric Breakdown ◽  
Breakdown Strength ◽  
Sol Gel ◽  
Middle Layer ◽  
Slight Variation ◽  
High Dielectric

ABSTRACTThin films of Ba1-xSrxTiO3 (BST) are being actively investigated for applications in dynamic random access memories (DRAM) because of their properties such as high dielectric constant, low leakage current, and high dielectric breakdown strength. Various approaches have been used to improve the dielectric properties of BST thin films such as doping, graded compositions, and multilayer structures. We have found that inserting a ZrO2 layer in between two BST layers results in a significant reduction in dielectric constant as well as dielectric loss. In this work the effect of Y2O3 doped ZrO2 on the dielectric properties of BST/ZrO2/BST trilayer structure is studied. The structure Ba0.8Sr0.2TiO3/(Y2O3)x(ZrO2)1-x/Ba0.8Sr0.2TiO3 is deposited by a sol-gel process on platinized Si substrate. The composition (x) of the middle layer is varied while keeping the total thickness of the trilayer film constant. The dielectric constant of the multilayer film decreases with the increase of Y2O3 amount in the film whereas there is a slight variation in dielectric loss. In Y2O3 doped multilayer thin films, the dielectric loss is lower in comparison to other films and also there is good frequency stability in the loss in the measured frequency range and hence very suitable for microwave device applications.

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