Effects of LSCO Buffer Layer on the Microstructure and Dielectric Properties of Ba0.6Sr0.4TiO3 Films Prepared by Sol-gel Methods

2009 ◽  
Vol 1199 ◽  
Author(s):  
Songwei Han ◽  
Shengwen Yu ◽  
Jinrong Cheng
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Sol Gel ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Random Orientation ◽  
X Ray ◽  
Bst Thin Films ◽  
Structure And Morphology ◽  
Bst Films

AbstractIn this work, Ba0.6Sr0.4TiO3(BST) thin films were deposited on Ti substrates using conductive La0.5Sr0.5CoO3 (LCSO) as buffer layers. Both BST and LSCO films were prepared by sol-gel methods. The structure and morphology of BST and LSCO films were analyzed by X-ray diffraction (XRD). XRD results show that both BST and LSCO films have perovskite structure with random orientation. The dielectric properties of BST films were dependent on the thickness of LSCO buffer layers. Upon using LSCO buffer layers, the dielectric properties of BST films were significantly improved. The dielectric constant, tunability, and dielectric loss of BST thin films for LSCO of 150 nm achieved about 453, 0.032 and 31.26% respectively.

Effects of La0.5Sr0.5CoO3 sol concentration on the microstructure and dielectric properties of Ba0.6Sr0.4TiO3 films prepared by sol-gel method on Ti substrate

2012 ◽  
Vol 1494 ◽  
pp. 253-258
Author(s):  
Dan Jiang ◽  
Songwei Han ◽  
Xuelian Zhao ◽  
Jinrong Cheng
Keyword(s):  
Electron Microscopy ◽  
Dielectric Properties ◽  
Sol Gel ◽  
Sem Analysis ◽  
X Ray Diffraction ◽  
Gel Method ◽  
X Ray ◽  
Sol Gel Method ◽  
Bst Films ◽  
Scanning Electron

ABSTRACTBa0.6Sr0.4TiO3 (BST) thin films were deposited on La0.5Sr0.5CoO3 (LSCO) buffered Ti substrates. Both BST and LSCO were prepared by sol-gel method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analysis were used to investigate the effect of LSCO sol concentration on the crystallinity and surface morphology of the films. The results show that with the increase of LSCO sol concentration, BST films show variation of the structure and dielectric properties. BST films for LSCO of 0.2 mol/L exhibit a better crystallinity and improved dielectric properties, with the tunability, dielectric constant and tanδ of 30%, 420 and 0.028 respectively.

Effects of Sol Viscosity on Properties of BST Thin Films Prepared by Sol-Gel Method

2010 ◽  
Vol 105-106 ◽  
pp. 676-678
Author(s):  
Zong Hui Zhou ◽  
Jing Liu
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Raw Materials ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Bst Thin Films ◽  
Abo3 Perovskite ◽  
Bst Films ◽  
Crystallization Degree

A series of BST(Ba0.65Sr0.35TiO3) sol with different viscosity were prepared by using Ba(CH3COOH)2, Sr(CH3COOH)2 and Ti(OC4H9)4 as raw materials. The BST thin films were fabricated by sol-gel method and spin-coating process on Si(100) substrates. The effect of sol viscosity on crystallization, microstructure and dielectric properties of BST thin films were analyzed by using X-ray diffractometry, scanning electron microscopy and impedance phase analyzer. The results show that the BST films coated by sol with viscosity of 3.0cp and annealed at 750°C for 1h are basically non-crystalline. The crystallization degree increases with the increase of sol viscosity at the same annealing temperature. The ABO3 perovskite structure is formed when the sol viscosity increases to 3.5cp. With further increasing sol viscosity to 6.0cp, the crystal grains of the film grow well and range very compact, the surface become smooth, and the films have optimal dielectric properties.

Preparation and Research of Ferroelectric Properties of Fabricated Thin Film by Doping La and Nd to Bi4Ti3O12

2011 ◽  
Vol 287-290 ◽  
pp. 2318-2321
Author(s):  
Shu Lan Guo ◽  
Jia Li ◽  
Xue Dong Xu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Random Orientation ◽  
Thin Film Thickness ◽  
Homogeneous Microstructure ◽  
X Ray ◽  
A Site

Ferroelectric thin films Bi3.25La0.75Ti3O12,Bi3.15Nd0.85Ti3O12 and Bi3.15(La0.5Nd0.5)0.85Ti3O12 of A-site substitution of Bi4Ti3O12 were fabricated by sol-gel method in the paper. X-ray diffraction pattern shows the prepared thin films exhibit a highly random orientation with predominantly (117) and (00l) orientation. Pr values of Bi3.25La0.75Ti3O12 、Bi3.15Nd0.85Ti3O12 and Bi3.15(La0.5Nd0.5)0.85Ti3O12 thin films were respectively 13.14μC/cm2, 20.65μC/cm2 and 21.23μC/cm2 at the voltage of 10V.FE-SEM shows that the BNT thin film has a dense and homogeneous microstructure without any crack. The BNT thin film thickness is about 300nm.

Preparation and Properties of Graphene/TiO2 Thin Films

2015 ◽  
Vol 778 ◽  
pp. 136-139
Author(s):  
Tao Bai ◽  
Shi Gen Zhu
Keyword(s):  
Thin Films ◽  
Atomic Force Microscope ◽  
Differential Scanning Calorimeter ◽  
Crystalline Phase ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Thermo Gravimetric ◽  
X Ray ◽  
Structure And Morphology ◽  
Atomic Force

This study prepared a Graphene/TiO2(G/TiO2) thin films by using a sol–gel method The structure and morphology of the materials were characterized using X-ray diffraction (XRD), atomic force microscope (AFM) and thermo gravimetric- differential scanning calorimeter techniques (TG/DTG).AFM images showed that the G/TiO2 film is typically amorphous hot-treated at 300°C. When the temperature was increased to 500 °C, G/TiO2 thin films are all crystalline. The XRD results showed that G/TiO2 thin films contained crystalline phase of anatase after calcining at 500°C. TG/DTG measurement showed that the change of the crystal phase did not occur in gel until to 500°C.

scholarly journals Optical and dielectric properties of polycrystalline gallium ferrite thin films on Pt/Si  substrates

2020 ◽  
Author(s):  
Monali Mishra ◽  
Smrutirekha Swain ◽  
Sukalyan Dash ◽  
Somdutta Mukherjee
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Sol Gel ◽  
Visible Region ◽  
Charge Carrier Concentration ◽  
Flat Band ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates

Abstract In this work, GaFeO 3 thin films are deposited on Pt/Si substrates using sol-gel spin coating technique. The effect of these films on different properties such as: structural, optical and electrical properties are investigated. X- ray diffraction (XRD) confirms that GaFeO 3 has orthorhombic Pc2 1 n symmetry. Scanning electron microscopy reveals the uniform distribution of sol and crack free nature of the films. The optical absorption spectrum was recorded using DRS UV-Vis which showed the thin films are absorbed in the visible region. We have also performed experimentally which determines the flat band potential using Mott-Schottky equation. The width of the space charge region and charge carrier concentration of the thin films is also calculated. The dielectric properties of the thin films are also studied in this paper. This work opens up the possibility for the polycrystalline GaFeO 3 thin films to be used as phototelectrodes.

Properties of Zr-Substituted (Ba,Sr)TiO3 Thin Films for Integrated Capacitors

1999 ◽  
Vol 603 ◽  
Author(s):  
G. T. Stauf ◽  
P. S. Chen ◽  
W. Paw ◽  
J. F. Roeder ◽  
T. Ayguavives ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Storage ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Film Properties ◽  
X Ray ◽  
Bst Thin Films ◽  
Density Values ◽  
Bst Films ◽  
The Impact

AbstractThere has been significant interest recently in use of BaSrTiO3 (BST) thin films for integrated capacitors; these devices have benefits for high frequency operations, particularly when high levels of charge or energy storage are required. We discuss the electrical properties of BST thin films grown by metalorganic chemical vapor deposition (MOCVD) which make them suitable for these applications, as well as the impact of processing conditions such as growth temperature on specific film properties. We have also examined addition of Zr in amounts ranging up to 20% to the BST films. X-Ray diffraction indicates that the Zr is incorporated into the BST lattice. Voltage withstanding capability, leakage and dielectric constant of the thin films have been measured as functions of deposition temperature and Zr content. Addition of Zr to BST films increases breakdown voltages by as much as a factor of two, to approximately 2 MV/cm, raising their energy storage density values to levels approaching 30 J/cc. Charge storage densities of above 60 fF/µm2were also obtained.

ITO Thin Films on Silicon Buffer by Sol Gel Method

2006 ◽  
Vol 514-516 ◽  
pp. 1155-1160 ◽  
Author(s):  
Talaat Moussa Hammad
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Optical Transmission ◽  
Sol Gel ◽  
Precursor Solution ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ito Thin Films ◽  
Uv Visible

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.

Sol-Gel derived Bi4-xNdxTi3O12 Thin Films and Their Characterization

2002 ◽  
Vol 737 ◽  
Author(s):  
R.E. Melgarejo ◽  
M.S. Tomar ◽  
A. Hidalgo ◽  
R.S. Katiyar
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Bismuth Titanate ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Complete Solid Solution ◽  
Sol Gel Process ◽  
Ferroelectric Memory ◽  
Initial Results

ABSTRACTNd substituted bismuth titanate Bi4-xNdxTi3O12 were synthesized by sol-gel process and thin films were deposited on Pt substrate (Pt/TiO2/SiO2/Si) by spin coating. Thin films, characterized by X-ray diffraction and Raman spectroscopy, shows complete solid solution up to the composition x < 1. Initial results indicate that the ferroelectric polarization increases with increasing Nd content in the film with 2Pr = 50μC/cm2 for x = 0.46, which may have application in non-volatile ferroelectric memory devices.

Synthesis and Characterizations of Strontium Substituted Hydroxyapatite Thin Films

2010 ◽  
Vol 93-94 ◽  
pp. 231-234
Author(s):  
B. Hongthong ◽  
Satreerat K. Hodak ◽  
Sukkaneste Tungasmita
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Composition ◽  
Spin Coating ◽  
Phase Structure ◽  
Sol Gel ◽  
Cross Linking ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process

Strontium substituted hydroxyapatite(SrHAp) were fabricated both in the form of powder as reference and thin film by using inorganic precursor reaction. The sol-gel process has been used for the deposition of SrHAp layer on stainless steal 316L substrate by spin coating technique, after that the films were annealed in air at various temperatures. The chemical composition of SrHAp is represented (SrxCa1-x)5(PO4)3OH, where x is equal to 0, 0.5 and 1.0. Investigations of the phase structure of SrHAp were carried out by using X-ray diffraction technique (XRD). The results showed that strontium is incorporated into hydroxyapatite where its substitution for calcium increases in the lattice parameters, and Sr3(PO4)2 can be detected at 900°C. The SEM micrographs showed that SrHAp films exhibited porous structure before develop to a cross-linking structure.

The Use of BaF2 Buffer Layers for the Sputter-Deposition of Ticabacuo Thin-Film Superconductors

1989 ◽  
Vol 169 ◽  
Author(s):  
K.M. Hubbard ◽  
P.N. Arendt ◽  
D.R. Brown ◽  
D.W. Cooke ◽  
N.E. Elliott ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sputter Deposition ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Film Substrate ◽  
Ion Backscattering ◽  
Scanning Electron

AbstractThin films of the Tl‐based superconductors often have relatively poor properties because of film/substrate interdiffusion which occurs during the anneal. We have therefore investigated the use of BaF2 as a diffusion barrier. TICaBaCuO thin films were deposited by dc magnetron sputtering onto MgO <100> substrates, both with and without an evaporation‐deposited BaF2 buffer layer, and post‐annealed in a Tl over‐pressure. Electrical properties of the films were determined by four‐point probe analysis, and compositions were measured by ion‐backscattering spectroscopy. Structural analysis was performed by X‐ray diffraction and scanning electron microscopy. The BaF2 buffer layers were found to significantly improve the properties of the TICaBaCuO thin films.

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