Role of Anode on Resistance Switching Phenomenon of Metal Oxide Resistive Random Access Memory

2015 ◽  
Vol 1805 ◽  
Author(s):  
Kentaro Kinoshita ◽  
Sang-Gyu Koh ◽  
Takumi Moriyama ◽  
Satoru Kishida
Keyword(s):  
Metal Oxide ◽  
Cell Structure ◽  
Random Access ◽  
Theoretical Models ◽  
Resistive Random Access Memory ◽  
Electrode Structure ◽  
Switching Phenomenon ◽  
Afm Cantilever ◽  
Electrode Metal

ABSTRACTAlthough the presence of oxygen reservoir is assumed in many theoretical models which explain resistive switching of ReRAM with an electrode/metal oxide (MO)/electrode structure, the location of oxygen reservoir is not clear. We have previously reported a method for preparing an extremely small ReRAM cell which has removable bottom electrode (BE), by using AFM cantilever. In this study, we used this cell structure to specify the location of oxygen reservoir. Since an anode is assumed to work as an oxygen reservoir in most models, we investigated the effect of changing anodes for the same filament on the presence or absence of the occurrence of reset switching. It was revealed that reset occurred independently of catalytic ability and Gibbs free energy (ΔG) of anode material. However, reset was caused by repairing oxygen vacancies of which filament consists when metals with high ΔG is used as an anode, whereas by oxidizing an anode when metals with low ΔG is used as an anode. This result suggests that the MO film works as an oxygen reservoir for anode with high ΔG, whereas an anode works as an oxygen reservoir for anode with low ΔG.

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Current Density ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Promising Candidate ◽  
Forward Current ◽  
Switching Characteristics

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.

Role of nitrogen incorporation into Al2O3-based resistive random-access memory

2014 ◽  
Vol 7 (7) ◽  
pp. 074202 ◽  
Author(s):  
Moon Young Yang ◽  
Katsumasa Kamiya ◽  
Hiroki Shirakawa ◽  
Blanka Magyari-Köpe ◽  
Yoshio Nishi ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Nitrogen Incorporation

Reliability of Atmosphere Pressure-Plasma Enhanced Chemical Vapor Deposition Deposited Indium Gallium Zinc Oxide Resistive Random Access Memory Device with Microwave Annealing

2020 ◽  
Vol 20 (7) ◽  
pp. 4057-4060
Author(s):  
Chien-Hung Wu ◽  
Song-Nian Kuo ◽  
Kow-Ming Chang ◽  
Yi-Ming Chen ◽  
Yu-Xin Zhang ◽  
...  
Keyword(s):  
Retention Time ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Thin Solid Films ◽  
Solid Films ◽  
Microwave Annealing ◽  
Annealing Conditions

Recently resistive random access memory (RRAM) is considered to be the most promising one to become the next generation memory since its simple Metal/Insulator/Metal (MIM) structure, lower power consumption and fabrication cost (Meena, J.S., et al., 2014. Overview of emerging nonvolatile memory technologies. Nanoscale Research Letters, 9(1), p.526). Due to some bottlenecks for current flash memory, such as high operation voltage, low operation speed, poor retention time and endurance, RRAM device is regarded as an alternative solution (Fuh, C.S., et al., 2011. Role of environmental and annealing conditions on the passivation-free In–Ga–Zn–O TFT. Thin Solid Films, 520, pp.1489–1494). In this investigation, the memory layer of RRAM device is IGZO, and it is deposited with AP-PECVD technique which can operate under atmosphere, reduce cost of the process. Microwave annealing (MWA) is used to enhance the RRAM device reliability (Fuh, C.S., et al., 2011. Role of environmental and annealing conditions on the passivation-free In–Ga–Zn–O TFT. Thin Solid Films, 520, pp.1489–1494). Experiment shows that with appropriate MWA treatment, the IGZO RRAM device exhibits better electrical characteristics, reliability issues such as numbers of switching cycle and data retention time are also improved (Teng, L.F., et al., 2012. Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor. Applied Physics Letters, 101, p.132901).

Metal oxide resistive random access memory based synaptic devices for brain-inspired computing

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EA06 ◽  
Author(s):  
Bin Gao ◽  
Jinfeng Kang ◽  
Zheng Zhou ◽  
Zhe Chen ◽  
Peng Huang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

scholarly journals A Compact Model for Metal–Oxide Resistive Random Access Memory With Experiment Verification

2016 ◽  
Vol 63 (5) ◽  
pp. 1884-1892 ◽  
Author(s):  
Zizhen Jiang ◽  
Yi Wu ◽  
Shimeng Yu ◽  
Lin Yang ◽  
Kay Song ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Compact Model ◽  
Access Memory ◽  
Experiment Verification

Understanding the Role of Process Parameters on the Characteristics of Transition Metal Oxide RRAM/Memristor Devices

2011 ◽  
Vol 1337 ◽  
Author(s):  
Branden Long ◽  
Yibo Li ◽  
Rashmi Jha
Keyword(s):  
Random Access ◽  
Charge Trapping ◽  
Resistive Random Access Memory ◽  
Interface State ◽  
State Density ◽  
Switching Behavior ◽  
Low Oxygen ◽  
Doping Density ◽  
Diode Behavior

ABSTRACTIn this report, we studied the role of the oxygen concentration in TiOx layer of Ni/TiOx/TiO2/Ni stack based 2-terminal resistive random access memory (RRAM) devices. The sample with oxygen deficient TiOx layer showed Schottky diode type J-V characteristics in the as-fabricated state while the sample with higher oxygen content in TiOx demonstrated MIM or back-to-back connected diode behavior. The Capacitance-Voltage (C-V) profiling was performed and doping density vs. depletion width characteristic was obtained. The conductance technique was implemented to study the interface state density. The RRAM type switching behavior of these samples was studied. The sample with high oxygen in TiOx showed filament based switching after electroforming while the sample with low oxygen in TiOx showed switching governed by the charge trapping.

scholarly journals Modeling of Gate Tunable Synaptic Device for Neuromorphic Applications

2021 ◽  
Vol 9 ◽  
Author(s):  
Yang Shen ◽  
He Tian ◽  
Yanming Liu ◽  
Fan Wu ◽  
Zhaoyi Yan ◽  
...  
Keyword(s):  
Stochastic Simulation ◽  
Cell Structure ◽  
Random Access ◽  
Simulation Method ◽  
Resistive Random Access Memory ◽  
Growth Speed ◽  
Neuromorphic Computing ◽  
Resistive Layer ◽  
Back Gate ◽  
Von Neumann

The emerging memories are great candidates to establish neuromorphic computing challenging non-Von Neumann architecture. Emerging non-volatile resistive random-access memory (RRAM) attracted abundant attention recently for its low power consumption and high storage density. Up to now, research regarding the tunability of the On/Off ratio and the switching window of RRAM devices remains scarce. In this work, the underlying mechanisms related to gate tunable RRAMs are investigated. The principle of such a device consists of controlling the filament evolution in the resistive layer using graphene and an electric field. A physics-based stochastic simulation was employed to reveal the mechanisms that link the filament size and the growth speed to the back-gate bias. The simulations demonstrate the influence of the negative gate voltage on the device current which in turn leads to better characteristics for neuromorphic computing applications. Moreover, a high accuracy (94.7%) neural network for handwritten character digit classification has been realized using the 1-transistor 1-memristor (1T1R) crossbar cell structure and our stochastic simulation method, which demonstrate the optimization of gate tunable synaptic device.

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