Preparation of [(Bi2Te3)x(HfTe2)]y Superlattices

2005 ◽  
Vol 886 ◽  
Author(s):  
Benjamin Allen Schmid ◽  
Fred R Harris ◽  
David C Johnson
Keyword(s):  
Annealing Temperature ◽  
Amorphous State ◽  
X Ray Diffraction ◽  
X Ray ◽  
Modulated Elemental Reactants ◽  
Elemental Reactants

ABSTRACTThe synthesis of a number of (Bi2Te3)x(HfTe2)y superlattices was accomplished using the modulated elemental reactants (MER) method. The samples were characterized using X-ray reflectivity and X-ray diffraction in the as deposited (amorphous) state and as a function of annealing temperature and time.

Synthesis of New Thermoelectrics Using Modulated Elemental Reactants

1997 ◽  
Vol 478 ◽  
Author(s):  
Marc D. Hornbostel ◽  
Heike Sellinschegg ◽  
David C. Johnson
Keyword(s):  
Crystal Structure ◽  
X Ray Diffraction ◽  
Systematic Screening ◽  
X Ray ◽  
Low Temperature Annealing ◽  
Modulated Elemental Reactants ◽  
Ternary Metal ◽  
Elemental Reactants ◽  
Binary Compounds ◽  
New Compounds

AbstractA series of new, metastable ternary crystalline compounds with the skutterudite crystal structure have been synthesized using modulated elemental reactants. The initial reactants are made up of multiple repeats of a ˜25Å thick unit containing elemental layers of the desired ternary metal, iron and antimony. Low temperature annealing (150°C) results in interdiffusion of the elemental layers to form amorphous reaction intermediates. Annealing these intermediates at temperatures between 200°C and 250°C results in exothermic crystallization of the desired skutterudite crystal structure. Most of the new compounds prepared are only kinetically stable, decomposing exothermically to form thermodynamically more stable mixtures of binary compounds and elements. Low angle x-ray diffraction studies show that the resulting films are exceedingly smooth. These films have an ideal geometry for measuring properties of importance for thermoelectric devices—the Seebeck coefficient and the electrical conductivity. Thermal conductivity can be measured using a modification of the 3ω technique of Cahill. Samples can be produced rapidly, allowing for systematic screening and subsequent optimization as a function of composition and doping levels.

Damage Mechanisms of Ion Implanted Bulk (0001) ZnO Single Crystals.

2003 ◽  
Vol 792 ◽  
Author(s):  
B.T. Adekore ◽  
I. Usov ◽  
B. Patnaik ◽  
N. Parikh ◽  
R.F Davis
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Annealing Temperature ◽  
Amorphous State ◽  
Atomic Mass ◽  
Crystalline Lattice ◽  
X Ray Diffraction ◽  
Damage Mechanisms ◽  
X Ray ◽  
Structural Recovery

ABSTRACTCrystalline damage created by ion-implantation of dopant impurities in ZnO (0001) substrates was characterized as a function of atomic mass of implanted species using triple-axis (2θ-ω/ω) x-ray diffraction and Rutherford backscattering (RBS). The former revealed the presence of implantation-induced strain through the broadening of the isometric and asymmetric 2θ-ω reflections. However, RBS indicated that the damage introduced during implantation of these ions was insufficient to transform the crystalline lattice into a completely amorphous state. Additional XRD characterization as a function of annealing temperature of the implanted materials showed a reduction in the broadening of the isometric reflections, indicating that structural recovery of implanted ZnO crystals can be achieved.

Synthesis of (Bi2Te3)x(TiTe2)y and (Bi2Te3)x(TiTe2)3 Superlattices

2005 ◽  
Vol 886 ◽  
Author(s):  
Mary Smeller ◽  
Fred R. Harris ◽  
David C. Johnson
Keyword(s):  
Lattice Parameters ◽  
X Ray Diffraction ◽  
Characteristic Structure ◽  
X Ray ◽  
Modulated Elemental Reactants ◽  
Annealing Conditions ◽  
Linear Behavior ◽  
Deposition Parameters ◽  
Elemental Reactants ◽  
Diffraction Patterns

ABSTRACTThe synthesis of (Bi2Te3)x(TiTe2)x and (Bi2Te3)x(TiTe2)3 superlattices using modulated elemental reactants was successfully accomplished. This required the calibration of the deposition parameters to achieve both the desired atomic compositions of the constituent layers and the deposition of the absolute amounts of each of the components to yield the title compounds. Proper annealing conditions were determined from an investigation of the x-ray diffraction patterns of a superlattice sample as a function of annealing temperature. The change in lattice parameters as a function of x showed the expected linear behavior with slopes consistent with values expected from the published lattice parameters of the binary components. Rietveld refinement showed that the characteristic structure of the binary components is maintained in the superlattices studied.

scholarly journals A Study of Thin Film Resistors Prepared Using Ni-Cr-Si-Al-Ta High Entropy Alloy

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Ruei-Cheng Lin ◽  
Tai-Kuang Lee ◽  
Der-Ho Wu ◽  
Ying-Chieh Lee
Keyword(s):  
Annealing Temperature ◽  
Phase Evolution ◽  
Amorphous Structure ◽  
High Entropy Alloy ◽  
X Ray Diffraction ◽  
Temperature Coefficient Of Resistance ◽  
X Ray ◽  
High Entropy ◽  
Transmission Electron ◽  
Thin Film Resistors

Ni-Cr-Si-Al-Ta resistive thin films were prepared on glass and Al2O3substrates by DC magnetron cosputtering from targets of Ni0.35-Cr0.25-Si0.2-Al0.2casting alloy and Ta metal. Electrical properties and microstructures of Ni-Cr-Si-Al-Ta films under different sputtering powers and annealing temperatures were investigated. The phase evolution, microstructure, and composition of Ni-Cr-Si-Al-Ta films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). When the annealing temperature was set to 300°C, the Ni-Cr-Si-Al-Ta films with an amorphous structure were observed. When the annealing temperature was at 500°C, the Ni-Cr-Si-Al-Ta films crystallized into Al0.9Ni4.22, Cr2Ta, and Ta5Si3phases. The Ni-Cr-Si-Al-Ta films deposited at 100 W and annealed at 300°C which exhibited the higher resistivity 2215 μΩ-cm with −10 ppm/°C of temperature coefficient of resistance (TCR).

scholarly journals Effects of Thermal Annealing on the Properties of Zirconium-Doped MgxZn1−XO Films Obtained through Radio-Frequency Magnetron Sputtering

Membranes ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 373
Author(s):  
Wen-Yen Lin ◽  
Feng-Tsun Chien ◽  
Hsien-Chin Chiu ◽  
Jinn-Kong Sheu ◽  
Kuang-Po Hsueh
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Free Electrons ◽  
X Ray ◽  
Mg Content

Zirconium-doped MgxZn1−xO (Zr-doped MZO) mixed-oxide films were investigated, and the temperature sensitivity of their electric and optical properties was characterized. Zr-doped MZO films were deposited through radio-frequency magnetron sputtering using a 4-inch ZnO/MgO/ZrO2 (75/20/5 wt%) target. Hall measurement, X-ray diffraction (XRD), transmittance, and X-ray photoelectron spectroscopy (XPS) data were obtained. The lowest sheet resistance, highest mobility, and highest concentration were 1.30 × 103 Ω/sq, 4.46 cm2/Vs, and 7.28 × 1019 cm−3, respectively. The XRD spectra of the as-grown and annealed Zr-doped MZO films contained MgxZn1−xO(002) and ZrO2(200) coupled with Mg(OH)2(101) at 34.49°, 34.88°, and 38.017°, respectively. The intensity of the XRD peak near 34.88° decreased with temperature because the films that segregated Zr4+ from ZrO2(200) increased. The absorption edges of the films were at approximately 348 nm under 80% transmittance because of the Mg content. XPS revealed that the amount of Zr4+ increased with the annealing temperature. Zr is a potentially promising double donor, providing up to two extra free electrons per ion when used in place of Zn2+.

The Evaluation of TiTe2 as a Diffusion Barrier in the Formation of Low Thermal Conductivity Nanolaminates with Bi2Te3 and Sb2Te3

2010 ◽  
Vol 74 ◽  
pp. 38-47
Author(s):  
Clay Mortensen ◽  
Paul Zschack ◽  
David C. Johnson
Keyword(s):  
Thermal Conductivity ◽  
Diffusion Barrier ◽  
Self Assembly ◽  
Low Temperatures ◽  
Annealing Temperature ◽  
The Self ◽  
High Angle ◽  
X Ray Diffraction ◽  
Amorphous Precursor ◽  
X Ray

The evolution of designed [(Ti-Te)]x[(Sb-Te)]y, [(Bi-Te)]x[(Sb-Te)]y, [(Ti-Te)]w[(Bi-Te)]x[(Sb-Te)]y and [(Ti-Te)]w[(Bi-Te)]x[(Ti-Te)]y[(Sb-Te)]z precursors were followed as a function of annealing temperature and time using both low and high angle x-ray diffraction techniques to probe the self assembly into nanolaminate materials. The [(Bi-Te)]x[(Sb-Te)]y precursors were found to interdiffuse at low temperatures to form a (BixSb1-x)2Te3 alloy. The [(Ti-Te)]x[(Bi-Te)]y and [(Ti-Te)]x[(Sb-Te)]y precursors formed ordered nanolaminates [{(TiTe2)}1.35]x[Bi2Te3]y and [{(TiTe2)}1.35]x[Sb2Te3]y respectively. The [(Ti-Te)]w[(Bi-Te)]x[(Sb-Te)]x precursors formed [{(TiTe2)}1.35]w[(Bi0.5Sb0.5)2Te3]2x nanolaminates on annealing, as the bismuth and antimony layers interdiffused. Over the range of TiTe2 thicknesses used in [(Ti-Te)]w[(Bi-Te)]x[(Ti-Te)]y[(Sb-Te)]z precursors, Bi and Sb were found to interdiffuse through the 2-4 nm thick Ti-Te layers, resulting in the formation of (BixSb1-x)2Te3 alloy layers as part of the final nanolaminated products. When the Bi-Te and Sb-Te thicknesses were equal in the amorphous precursors, symmetric [{(TiTe2)}1.35]m[(Bi0.5Sb0.5)2Te3]n nanolamiantes were formed. When the thicknesses of Bi-Te and Sb-Te layers were not equal in the amorphous precursor, asymmetric [(TiTe2)1.35]m[(BixSb1-x)2Te3]n[(TiTe2)1.35]m[(BixSb1-x)2Te3]p nanolaminates were formed. These results imply that to form (A)w(B)x(C)y nanolaminates using designed layered precursors all three components must be immiscible. To form (A)x(B)y(A)x(C)z nanolaminates, the components must be immiscible or the precursor to the A component and the A component itself must be an effective interdiffusion barrier preventing B and C from mixing.

W-Doped TiO2 Preparation and Photocatalytic Degradation of Guaiacol

2014 ◽  
Vol 513-517 ◽  
pp. 33-36 ◽  
Author(s):  
Zi Chang Xie ◽  
Ying Wang ◽  
Peng Wang ◽  
Lei Zhang
Keyword(s):  
Photocatalytic Activity ◽  
Visible Light ◽  
Photocatalytic Degradation ◽  
Degradation Rate ◽  
Amorphous State ◽  
X Ray Diffraction ◽  
Model Compounds ◽  
Plant Fibers ◽  
X Ray ◽  
Crystallite Structure

In this paper, W-doped TiO2 (W-TiO2) powder was prepared in hydrothermal method by mixing TiO2 and ammonium metatungstate. The catalysts were characterized by X-ray diffraction and ultraviolet spectrophotometer. The results displayed that W-TiO2 showed an anatase crystallite structure with 2 % W content. W-element in W-TiO2 was amorphous state. The guaiacol was degraded with the W-TiO2 in the visible light. It was a model compounds of lignin existed in the plant fibers. The degradation rate of guaiacol was increased with the photocatalytic time, as high as 88.21 % after 360 min irradiation. It was concluded that the W-TiO2 had an obvious photocatalytic activity under visible light. It can be used in the photocatalytic degradation of lignin.

scholarly journals Structural Studies of Zno Nanostructures on Porous Silicon: Effect of Post-Annealing Temperature

2018 ◽  
Vol 7 (3.11) ◽  
pp. 48
Author(s):  
Kevin Alvin Eswar ◽  
Mohd Husairi Fadzillah Suhaimi ◽  
Muliyadi Guliling ◽  
Zuraida Khusaimi ◽  
Mohamad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Annealing Temperature ◽  
Electrochemical Etching ◽  
Texture Coefficient ◽  
Zno Nanostructures ◽  
Structural Studies ◽  
X Ray Diffraction ◽  
X Ray ◽  
Post Annealing ◽  
Post Annealing Temperature

ZnO Nanostructures have been successfully deposited on of Porous silicon (PSi) via wet colloid chemical approach. PSi was prepared by electrochemical etching method. ZnO/PSi thin films were annealed in different temperature in the range of 300 °C to 700 °C. Surface morphology studies were conducted using field emission scanning microscopy (FESEM). Flower-like structures of ZnO were clearly seen at annealing temperature of 500 °C. The X-ray diffraction spectra (XRD) have been used to investigate the structural properties. There are three dominant peaks referred to plane (100), (002) and (101) indicates that ZnO has a polycrystalline hexagonal wurtzite structures. Plane (002) shows the highest intensities at annealing temperature of 500 °C. Based on plane (002) analysis, the sizes were in range of 30.78 nm to 55.18. In addition, it was found that the texture coefficient of plane (002) is stable compared to plane (100) and (101). 

Influence of Alloying Additions on Enhancement of Soft Magnetic Properties Effect and Crystallization in FeXSiB (X=Cu, V, Co, Zr, Nb) Amorphous Alloys

2007 ◽  
Vol 130 ◽  
pp. 171-174 ◽  
Author(s):  
Z. Stokłosa ◽  
G. Badura ◽  
P. Kwapuliński ◽  
Józef Rasek ◽  
G. Haneczok ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Amorphous Alloys ◽  
Crystallization Process ◽  
Annealing Temperature ◽  
Magnetic Measurements ◽  
X Ray Diffraction ◽  
Soft Magnetic ◽  
X Ray ◽  
Second Stage ◽  
Transmission Electron

The crystallization and optimization of magnetic properties effects in FeXSiB (X=Cu, V, Co, Zr, Nb) amorphous alloys were studied by applying X-ray diffraction methods, high resolution transmission electron microscopy (HRTEM), resistometric and magnetic measurements. The temperatures of the first and the second stage of crystallization, the 1h optimization annealing temperature and the Curie temperature were determined for different amorphous alloys. Activation energies of crystallization process were obtained by applying the Kissinger method. The influence of alloy additions on optimization effect and crystallization processes was carefully examined.

Thermal quenching behavior of Er-doped silicon-rich SiO2 prepared by ion implantation

2004 ◽  
Vol 19 (9) ◽  
pp. 2699-2702 ◽  
Author(s):  
C.S. Zhang ◽  
H.B Xiao ◽  
Y.J. Wang ◽  
Z.J. Chen ◽  
X.L. Cheng ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Annealing Temperature ◽  
Thermal Quenching ◽  
X Ray Diffraction ◽  
X Ray ◽  
Radiative Processes ◽  
Transmission Electron ◽  
Weak Intensity ◽  
Er Doped

Erbium and silicon were dual implanted into thermally grown SiO2 film on Si (110) substrates, followed by thermal treatment at 700–1200 °C for 30 min. The microstructure was studied by transmission electron microscope and x-ray diffraction. When the implanted films were annealed at T > 900 °C, the silicon nanocrystals (nc-Si) enwrapped by amorphous silicon (a-Si) could be observed. The thermal quenching behavior at λ = 1.535 μm and its relation with the annealling temperature were also investigated. With increasing annealing temperature, the portion of a-Si and the thermal quenching both decreased. Efficient luminescence from Er ions and weak intensity thermal quenching were obtained from the sample annealed at 1100 °C. The role of a-Si in non-radiative processes at T > 100 K is discussed.

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