Silicon Thin Film Growth by Pulsed Plasma CVD under Near-Atmospheric Pressure

2005 ◽  
Vol 891 ◽  
Author(s):  
Hirotatsu Kitabatake ◽  
Maki Suemitsu ◽  
Setsuo Nakajima ◽  
Tsuyoshi Uehara ◽  
Yasutake Toyoshima
Keyword(s):  
Atmospheric Pressure ◽  
Film Growth ◽  
Chemical Vapor ◽  
Pulsed Plasma ◽  
Silicon Thin Film ◽  
Cross Sectional ◽  
Raman Scattering Spectroscopy ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Si Films

ABSTRACTSi Plasma-enhanced chemical vapor deposition (PECVD) at a near-atmospheric pressure (NAP) of 500 Torr has been conducted by using a pulsed-electric-field based NAP-PECVD system. At a growth temperature of 180°C, poly-Si films with a high Raman ratio of 7.4 are obtained on glass substrates, while epitaxial-like growth occurs when Si(100) substrates are employed, as confirmed by Raman-scattering spectroscopy, X-ray diffraction, and a cross-sectional transmission-electron microscopy.

Variable Angle Spectroscopic Ellipsometric Characterization of Polycrystalline Silicon thin Film Multilayer Structures

1991 ◽  
Vol 238 ◽  
Author(s):  
Paul G. Snyder ◽  
Yi-Ming Xiong ◽  
John A. Woollam ◽  
Eric R. Krosche
Keyword(s):  
Polycrystalline Silicon ◽  
Composite Layer ◽  
Chemical Vapor ◽  
Silicon Thin Film ◽  
Cross Sectional ◽  
Additional Information ◽  
Variable Angle ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
Annealing Effects

ABSTRACTVariable angle spectroscopie ellipsometry (VASE), a nondestructive optical technique, was used to characterize two different multilayer samples, each having a low-pressure chemical vapor deposited polycrystalline silicon (poly-Si) layer. Analysis of these samples by cross-sectional transmission electron microscopy (XTEM) revealed large changes in grain size, between the undoped, as-deposited, and doped, annealed poly-Si layers. Roughness at the top of the poly-Si layers was also observed by XTEM. These features, together with the other structure parameters (thickness and composition), were analyzed ellipsometrically by fitting the measured VASE spectra with appropriate multilayer models. Each composite layer (surface overlayer, interfacial layer, and poly-Si layer) was modeled as a physical mixture, using the Bruggeman effective medium approximation. The ellipsometrically determined thicknesses were in very good agreement with the corresponding results measured by XTEM. Furthermore, VASE analysis provided additional information about the relative fractions of the constituent materials in the different composite layers. Thus, it quantitatively characterized the surface and interracial properties, and also the doping and annealing effects on the microstructure of poly-Si layers.

Effects of Deposition Parameters on Crystallization of Pecvd Amorphous Silicon Films

1995 ◽  
Vol 403 ◽  
Author(s):  
Yaozu Wang ◽  
Reece Kingi ◽  
Osama O. Awadelkarim ◽  
Stephen J. Fonash
Keyword(s):  
Grain Size ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Precursor Film ◽  
Furnace Annealing ◽  
Glass Substrates ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Si Films

AbstractPlasma-enhanced chemical vapor deposition was used to deposit a-Si:H thin films (∼ 1000 Å) at various temperatures below 300°C on Coming 7059 glass substrates using a silane-based plasma. These films were used as precursor materials to produce solid phase crystallized polycrystalline silicon (poly-Si) by conventional furnace annealing at 600°C in N2 ambient. The precursor a-Si and final poly-Si films were examined using spectroscopic ellipsometry and transmission electron microscopy. Precursor film deposition temperatures were found to affect the void density in the a-Si film and grain size in the resulting poly-Si film with lower deposition temperatures leading to higher void density in the a-Si film and larger grain size in the poly-Si film.

Smoothing Effects of MOCVD Grown GaAs/AlxGa1−xAs Superlattices

1991 ◽  
Vol 237 ◽  
Author(s):  
Xian-gang Xu ◽  
Bai-biao Huang ◽  
Shi-wen Liu ◽  
Hong-wen Ren ◽  
Min-hua Jiang
Keyword(s):  
Atmospheric Pressure ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Gaas Layer ◽  
Interface Roughness ◽  
Buffer Layers ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Initial Stage ◽  
Smoothing Effects

ABSTRACTGaAs/AlxGa1-xAs (x=0.5, 0.6, 1.0) superlattices used as buffer layers in HEMT devices have been grown by Metalorganic Chemical Vapor Deposition (MOCVD) at. atmospheric pressure, and characterized by cross-sectional transmission electron microscopy (XTEM). The initial stage of nucleation on the substrates has been clearly verified by examining the undulations of a 30na GaAs layer sandwiched between the substrate and the superlattice. Both Alo.5Gao.5As/GaAs and AlAs/GaAs superlattices can smooth out interface roughness caused by contaminations and dislocations on the substrate surface. The mechanism of smoothing effect has been discussed in detail.

Polycrystalline β-SiC Film Growth on Si by ECR-CVD at 178 - 500°C

1995 ◽  
Vol 403 ◽  
Author(s):  
Kuan-Lun Cheng ◽  
Chih-Chien Liu ◽  
Chung-Min Fu ◽  
Huang-Chung Cheng ◽  
Chiapyng Lee ◽  
...  
Keyword(s):  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Film Surface ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Dark Field ◽  
Cross Sectional ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Field Imaging

AbstractPolycrystalline β-SiC, with grain size up to 0.2 μm, was grown on silicon substrate by electron cyclotron resonance chemical vapor deposition (ECR-CVD) from SiH4/CH4/H2 at 178–500 °C. The nucleation process and surface structure of polycrystalline SiC were investigated via observing the film surface by atomic force microscopy (AFM). Reaction species which promote polycrystalline SiC was in-situ monitored by quadruple mass spectrum analysers during deposition process, which is crucial for the control of polycrystalline SiC growth. The microstructure of SiC films were inspected by bright-field imaging, dark-field imaging, and electron diffraction in cross-sectional transmission electron microscopy. This paper will also discuss the key parameters for the nucleation and growth of polycrystalline β-SiC at very low temperature in ECR-CVD system.

The Structure of Silicon Thin Films Grown on Sapphire by MBE

1987 ◽  
Vol 107 ◽  
Author(s):  
M. E. Twigg ◽  
J. G. Pellegrino ◽  
E. D. Richmond
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Film Growth ◽  
Chemical Vapor ◽  
Thin Film Growth ◽  
Silicon Thin Film ◽  
Silicon Thin Films ◽  
Transmission Electron

AbstractFrom a series of imaging experiments performed in the transmission electron microscope (TEM), it is apparent that for silicon grown on sapphire (SOS) by molecular beam epitaxy (MBE), silicon thin film growth on the (1012) sapphire plane resembles that observed for analogous films grown by chemical vapor deposition (CVD). At 900°C very thin (150A) silicon films grow as islands with either the (001) or (110) planes parallel to the (1012) plane; it is also found that most of the silicon grows as (001) rather than (110) islands, as is true for CVD-grown SOS. The orientation, however, of (110) islands occuring in this MBE-grown SOS sample differs from that of (110) islands occuring in CVD-grown SOS. By following this initial 150A of growth with 2500A of silicon deposited at. 750°C, a continuous (001) film was grown in which microtwins appear to be the predominant defect. The MBE-grown SOS also resembles that grown by CVD in that the microtwin densities associated with the “majority” and “minority” twinning systems are influenced by the orientation of the sapphire substrate.

Incubation Layer-Free Nanocrystalline-Si Thin Film Fabricated by ICP-CVD at 150°C for Flexible Electronics

2006 ◽  
Vol 910 ◽  
Author(s):  
Sang-Myeon Han ◽  
Young-Kwan Cha ◽  
Joong-Hyun Park ◽  
Sang-Geun Park ◽  
YoungSoo Park ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Dilution Effect ◽  
Cross Sectional ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled ◽  
Transmission Electron ◽  
Si Films

AbstractThe nc-Si films where the troublesome incubation layer was almost eliminated were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) under various dilution conditions. The nc-Si films were analyzed with cross-sectional high resolution transmission electron microscopy (HR-TEM) images. It was verified that the Si crystalline components formed and grew from the surface of buffer layer. The grain size of 20~50nm was measured. The absence of incubation layer in nc-Si film may be attributed mainly to ICP-CVD which generates remote plasma of high density, the role of hydrogen, and the dilution effect on the growth of crystalline. Our experimental results show that incubation-free nc-Si film deposited by ICP-CVD may be suitable for the active layer of bottom gate nc-Si TFTs as well as top gate nc-Si TFTs.

Comparison of SiH4 and Si2H6 RTCVD Kinetics using in-situ Spectroscopic Ellipsometry

1997 ◽  
Vol 470 ◽  
Author(s):  
Y. Z. Hu ◽  
S. P. Tay ◽  
Y. Wasserman ◽  
C. Y. Zhao ◽  
E. A. Irene
Keyword(s):  
Real Time ◽  
Incubation Time ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Ex Situ ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Si Films

ABSTRACTA comparison of SiH4 and Si2H6 chemical vapor deposition kinetics was performed in a rapid thermal processing (RTP) system at temperatures between 600 and 800 °C and reactant gas pressures between 1 and 25 mTorr. Quantitative assessment of the nucleation parameters and the microstructures of the deposited polycrystalline Si (poly-Si) films on SiO2 have been determined using in situ real time single wavelength and spectroscopie ellipsometry. In addition to ellipsometry, atomic force microscopy and cross-sectional transmission electron microscopy were used ex situ to observe the nucleation stage and the microstructures of the poly-Si films. In the present study we compare the nucleation, poly-Si film microstructure and surface roughness using SiH4 and Si2H6 in the RTP system and show that under the same processing conditions the saturation nuclei density (1010 cm−2) for Si2H6 is about 6 times higher than that for SiH4 and the poly-Si films from Si2H6 are smoother and have better columnar structure than those from SiH4.A particularly important parameter for selective epitaxial depositions is the time for nuclei to form, i.e. the incubation time. An operational incubation time were determined from the real time ellipsometric measurements and confirmed by AFM. The incubation times for using SiH4 and Si2H6 are different, but they show similar activation energies of about Einc = 1 eV in the 600–800 °C range. A formula of incubation time tinc was obtained and expressed.

Thin Films of Titanium Dioxide Prepared by Chemical Routes using Novel Precursors

2002 ◽  
Vol 755 ◽  
Author(s):  
K. Shalini ◽  
S. Chandrasekaran ◽  
S.A. Shivashankar
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Film Growth ◽  
Anatase Phase ◽  
Chemical Vapor ◽  
Inert Atmosphere ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Different Temperatures

ABSTRACTNovel, volatile, stable, oxo-β-ketoesterate complexes of titanium, whose synthesis requires only an inert atmosphere, as opposed to a glove box, have been developed. Using one of the complexes as the precursor, thin films of TiO2 have been deposited on glass substrates by metalorganic chemical vapor deposition (MOCVD) at temperatures ranging from 400°C to 525°C and characterized by scanning electron microscopy, transmission electron microscopy, and atomic force microscopy. All the films grown in this temperature range are very smooth; those grown above 480°C consist of nearly monodisperse, nanocrystals of the anatase phase. Optical studies show the bandgaps in the range 3.4–3.7 eV for films grown at different temperatures. Thin films of anatase TiO2 have also been grown by spin-coating technique using another ketoesterate complex of titanium, demonstrating that the newly developed complexes can be successfully used for thin film growth by various chemical routes.

Growth of Si1−xGex, Strained Layers Using Atmospheric-Pressure CVD

1991 ◽  
Vol 220 ◽  
Author(s):  
F. Namavar ◽  
J. M. Manke ◽  
E. P. Kvam ◽  
M. M. Sanfacon ◽  
C. H. Perry ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Defect Density ◽  
Chemical Vapor ◽  
Good Growth ◽  
X Ray Diffraction ◽  
Strained Layers ◽  
Dislocation Glide ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
Film Defect

ABSTRACTThe objective of this paper is to demonstrate the epitaxial growth of SiGe strained layers using atmospheric-pressure chemical vapor deposition (APCVD). We have grown SiGe layers with various thicknesses and Ge concentrations at temperatures ranging from 800–1000°C. The samples were studied using a variety of methods, including transmission electron microscopy (TEM), high resolution X-ray diffraction (HRXRD) and Raman spectroscopy (RS). Both HRXRD and RS results indicate that samples with about 10% Ge and a thickness of about 1000 Å are almost fully strained. TEM analyses of these samples indicate a film defect density less than 105/cm2. SIMS results indicate that the oxygen concentration in the epitaxial layers is lower than that found in CZ substrates.Our analyses also indicate that as-grown epitaxial Ge layers several microns thick have a defect density less than 107/cm2. The relatively low defect density in both SiGe and Ge layers grown on Si has been attributed to far higher dislocation glide velocity at the relatively elevated growth temperatures employed in CVD and to very good growth cleanliness.

Epitaxial Si1-xGex Films and Superlattice Structures Grown by CVD for Infrared Photodetectors

2003 ◽  
Vol 770 ◽  
Author(s):  
L. Maddiona ◽  
S. Coffa ◽  
S. Lorenti ◽  
C. Bongiorno
Keyword(s):  
Near Infrared ◽  
Chemical Vapor ◽  
Local Area ◽  
Strained Si ◽  
Cross Sectional ◽  
Active Layers ◽  
Transmission Electron ◽  
Photo Response ◽  
Superlattice Structures ◽  
On Chip

AbstractIntegration of photodetectors with high responsitivity in the near infrared (1.3-1.55 μm) on standard Si electronic circuits is important for a variety of applications in the field of on-chip, local area and long haul optical communications. In this work we report on a detailed structural and optical characterization of epitaxial Si1-xGex films and Si1-xGex /Si multilayers grown by chemical vapor deposition on (100) Si wafers. Cross-sectional transmission electron microscopy analyses show that metastable strained Si1-xGex films of few nanometer with x>40% can be deposited at low growth temperature and pressure. Absorption measurements on these films demonstrate the extension of the photo-response to 1.55 μm. Using these films as active layers Schottky integrated photodetectors have been fabricated.

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