Soft Vacuum, Pulsed Electron Beam Processing of Polyimides

1987 ◽  
Vol 101 ◽  
Author(s):  
J. Krishnaswamy ◽  
L. Li ◽  
G. J. Collins ◽  
H. Hiraoka ◽  
Mary Ann Caolo
Keyword(s):  
Electron Beam ◽  
Low Voltage ◽  
Electron Beams ◽  
Thermal Cure ◽  
Beam Hardening ◽  
Polyamic Acid ◽  
Pulsed Electron Beam ◽  
Substrate Distance ◽  
Electron Beam Processing ◽  
Oxygen Discharge

ABSTRACTWe report on the successful patterning of polyamic acid over wide areas using 28 kV pulsed electron beams produced in 30 mTorr air. The pattern degradation during the 350°C, 1/2 hr, imidizing thermal cure is prevented by pulsed, flood electron beam hardening of the developed polyamic acid patterns using the same soft vacuum, pulsed electron beam apparatus. It is also shown that a CW, low voltage, 1 to 3 kV electron beam sustained oxygen discharge can be used to completely strip the hardened, imidized material which is difficult to remove by wet methods. We also present, dose versus thickness remaining characteristics as a function of electron source to substrate distance and some examples of polyimide patterning.

Pulsed Electron Beam Processing of Silicon Devices

1980 ◽  
Vol 1 ◽  
Author(s):  
A. C. Greenwald ◽  
R. P. Dolan ◽  
S. P. Tobin
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Low Dose ◽  
Electron Beams ◽  
Pulsed Electron Beam ◽  
Process Sequence ◽  
Pulse Processing ◽  
Silicon Devices ◽  
Electron Beam Processing ◽  
Thermal Oxide

ABSTRACTPulsed electron beams [1] were used to anneal ion-implanted diodes, transistors, and resistors. Devices were fabricated by patterning a thermal oxide on a silicon wafer, ion-implanting and pulse processing with the oxide in place, and then applying contacts. Oxide films over 0.3 micron thick were not damaged, and the silicon below these films was not melted by the pulsed electron beam. Low-dose (101311B+/cm2), implanted, pulse-annealed resistors showed no change in sheet resistance for oxide windows 2.5 to 50.0 microns wide. Diodes were fashioned with good forward and reverse I-V characteristics, with m=1.09 and IO=2.7×10−10 A/cm2 for I=IO exp(qV.mkT)−1 , when a low-temperature (550˚C, 1 hr), postpulse anneal was included in the process sequence. Both bipolar and FET types of transistors were fabricated. Results compare favorably with thermal annealing cycles.

Processing of Polypropylene by Low-Energy Pulsed Electron Beam from Forevacuum Plasma Source

2016 ◽  
Vol 683 ◽  
pp. 95-99 ◽  
Author(s):  
Victor Burdovitsin ◽  
Andrey Kazakov ◽  
Alexandr Medovnik ◽  
Efim Oks ◽  
Irina Puhova ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Plasma Source ◽  
Beam Current ◽  
Beam Current Density ◽  
Pulsed Electron Beam ◽  
Force Microscopy ◽  
Electron Beam Processing ◽  
Atomic Force ◽  
Energy Flux Density

Influence of electron beam irradiation on the morphology and contact angle of polypropylene was investigated. Electron beam processing was carried out at 8 – 10 kV accelerating voltage and a pressure of 5 – 10 Pa. Beam current density was up to 4.5 A/cm2, and the pulse duration - from 150 to 300 μs. The morphology of irradiated polymer material was studied by scanning-electron and atomic-force microscopy methods. It was established formation of extended equally oriented “hills” divided by “valleys”. The height of hills increases with the growth of energy flux density per pulse.

Temperature profile and crater formation induced in high-current pulsed electron beam processing

2003 ◽  
Vol 21 (6) ◽  
pp. 1934-1938 ◽  
Author(s):  
Ying Qin ◽  
Chuang Dong ◽  
Xiaogang Wang ◽  
Shengzhi Hao ◽  
Aimin Wu ◽  
...  
Keyword(s):  
Electron Beam ◽  
Temperature Profile ◽  
Crater Formation ◽  
High Current ◽  
Pulsed Electron Beam ◽  
Electron Beam Processing

Effect of High-Current Pulsed Electron Beam Processing of Zr-1%Nb Alloy on Its Oxidation Kinetics at 1200C in Air and Steam

CORROSION ◽  
10.5006/3942 ◽  
2021 ◽  
Author(s):  
Mikhail Slobodyan ◽  
Konstantin Ivanov ◽  
Maxim Elkin ◽  
Vasiliy Klimenov ◽  
Sergey Pavlov ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Current ◽  
Surface Layers ◽  
Research Directions ◽  
Temperature Oxidation ◽  
Pulsed Electron Beam ◽  
Electron Beam Processing ◽  
Heating And Cooling ◽  
Loss Of Coolant ◽  
Kinetics Of

The paper reports the effect of high-current pulsed electron beam (HCPEB) processing of the Zr-1%Nb alloy, as one of the most widely used in water-cooled nuclear reactors, on the kinetics of its oxidation at 1200 °C in air and steam (these conditions are typical for potential loss-of-coolant accidents). It was shown that HCPEB processing caused a change in the surface morphology of the samples. In particular, craters with diameters of about 100 μm were found on the modified surfaces. They had initiated at an energy density of 5 J/cm2 and were characterized by relevant reliefs with microcracks. After HCPEB processing at 10 J/cm2, the craters were deeper with fractured surface layers. In addition, a pronounced surface relief corresponding to quenched martensitic microstructures was observed on the modified sample surfaces that had formed due to high heating and cooling rates. Due to sufficient degradation of the sample surfaces after HCPEB processing at 10 J/cm2, the kinetics of high-temperature oxidation was estimated only for the as-received samples and ones treated at 5 J/cm2. It was found that the as-received samples showed slightly greater weight gain levels in both air and steam environments, which fully correlated with the thickness ratio of the oxide, α-Zr(O) and prior-β layers. These phenomena and further research directions were discussed.

Abstract: Pulsed electron‐beam processing of material surfaces

1979 ◽  
Vol 16 (6) ◽  
pp. 1838-1839 ◽  
Author(s):  
A. C. Greenwald ◽  
A. R. Kirkpatrick ◽  
R. G. Little ◽  
J. A. Minnucci
Keyword(s):  
Electron Beam ◽  
Pulsed Electron Beam ◽  
Electron Beam Processing ◽  
Material Surfaces

Pulsed Electron Beam Melting of Fe

1981 ◽  
Vol 4 ◽  
Author(s):  
A. Knapp ◽  
D. M. Follstaedt
Keyword(s):  
Surface Layer ◽  
Electron Beam ◽  
Liquid Phase ◽  
Electron Beam Melting ◽  
Electron Beams ◽  
Sample Surface ◽  
Pulse Treatment ◽  
Pulsed Electron Beam ◽  
Density Of Dislocations ◽  
Slip Traces

ABSTRACTPulsed (50 nsec) electron beams with deposited energies of 1.1 ­ 2.4 J/cm2 have been used to rapidly melt a surface layer of Fe. Calculations show that this range of energies produces melt depths from 0.4–1.2 μm and melt times of 100–500 nsec. Optical microscopy and SEM of pulse treated polycrystalline foils show slip traces, as well as a general smoothing of surface features which shows that melting has occurred. TEM shows that the resolidified material is bcc, and that the material within a grain is epitaxial with the substrate. TEM also shows slip traces of {110} planes, as well as a high density of dislocations, both extended and loop. At the highest energy, subgrain boundaries are observed. Some samples were implanted with 1×1016 Sn/cm2 at 150 keV. After pulse treatment, the Sn depth profile was observed to have broadened, consistent with liquid phase diffusion. The Sn had the unexpected effect of suppressing slip at the sample surface.

Pulsed-Electron-Beam Processing of Materials for Medical Applications

2014 ◽  
Vol 56 (10) ◽  
pp. 1150-1155 ◽  
Author(s):  
N. N. Koval ◽  
Yu. F. Ivanov ◽  
A. D. Teresov ◽  
Yu. A. Denisova ◽  
E. A. Petrikova
Keyword(s):  
Electron Beam ◽  
Medical Applications ◽  
Pulsed Electron Beam ◽  
Electron Beam Processing

Electron Beam Processing of Semiconductors

1982 ◽  
Vol 13 ◽  
Author(s):  
B. Ahmed ◽  
R.A. McMahon
Keyword(s):  
Electron Beam ◽  
Electron Beams ◽  
Rapid Heating ◽  
Transfer Energy ◽  
Substrate Quality ◽  
Silicon Devices ◽  
Electron Beam Processing ◽  
Wide Range ◽  
Computer Controlled ◽  
Deposited Films

ABSTRACTElectron beams can transfer energy very efficiently to semiconductors. Systems have been developed for rapid heating to temperature around 1000°C under a variety of conditions from adiabatic to isothermal. Pulsed, focused, line and synthesized shaped beams are used to obtain a wide range of thermal cycles. The following applications are described: the annealing of ion-implanted Si, particularly the activation of As implants and shallow implants (Rp<150Å), the annealing of Si and Se in GaAs, the e-beam processing of implanted silicon devices and the improvement of SOS substrate quality. Localized annealing by a computer controlled e-beam and the recrystallization of deposited films on insulators are also considered.

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