Simulations of an Interface Crack Nucleation During Nanoindentaion : Molecular Dynamics and Finite Element Coupling Approach
Keyword(s):
Cu Film
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AbstractWe carried out the nanoindentation simulations for the Ru (superlayer) / Cu (film) / SiO2 (substrate) system using the finite temperature MD-FEM coupling method. The calculations are performed for the different adhesion energies of Cu/SiO2 ranging from 0.2 to 0.6 J/m2. During loading, it was found that the interfacial crack nucleation occurs at three to four times the contact radius, driven by the tensile stress acted on the Cu/SiO2 interface. We also show that the asymmetric defect behavior have a great effect on giving birth to the crack nucleation. The observation of our simulation indicates that the mechanism of the crack nucleation strongly depends on the interfacial bonding energy.
2015 ◽
Vol 142
(10)
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pp. 104105
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2021 ◽
Vol 33
(3)
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pp. 04021008
2011 ◽
Vol 378-379
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pp. 7-10
2011 ◽
Vol 03
(01n02)
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pp. 39-47
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2021 ◽
2017 ◽
Vol 129
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pp. 1-12
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2008 ◽
Vol 22
(31n32)
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pp. 5661-5666
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1999 ◽
Vol 118
(1)
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pp. 11-16
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