Growth Mechanism of Direct Writing of Silicon in AR+ Laser CVD

1988 ◽  
Vol 129 ◽  
Author(s):  
Takeshi Nagahori ◽  
Satoru Matsumoto
Keyword(s):  
Direct Writing ◽  
Large Area ◽  
Arrhenius Behavior ◽  
Average Growth Rate ◽  
Average Growth ◽  
Thickness Profile ◽  
Ion Laser ◽  
Laser Cvd ◽  
Argon Ion ◽  
Good Agreement

ABSTRACTSilicon lines are directly written using argon ion laser CVD. The thickness profile of the line has a Gaussian-like shape. The thickness profile is calculated with the model based on Arrhenius behavior. A good agreement is obtained.The effective exposure time is used to analyze the direct writing process. Using it, the average growth rate is estimated to be about 100 times faster than that of conventional large area CVD with the activation energy of 2.4± 0.4eV.

Laser Cvd of Tungsten on Silicon Oxynitride

1991 ◽  
Vol 236 ◽  
Author(s):  
R. Izquierdo ◽  
A. Lecours ◽  
M. Meunier
Keyword(s):  
Silicon Oxynitride ◽  
Direct Writing ◽  
Laser Direct Writing ◽  
Good Adhesion ◽  
Columnar Growth ◽  
Growth Structure ◽  
Ion Laser ◽  
Laser Cvd ◽  
Argon Ion ◽  
Deposition Conditions

AbstractLaser direct writing of tungsten from WF6 onto 0.6 μm thick films of silicon oxynitride on silicon using an argon-ion laser beam is investigated. XPS studies show that WF6 is chemisorbed on the oxynitride surface and that nitrogen plays a role in this adsorption. Deposits have good adhesion, columnar growth structure and resistivities ranging from 13 to 25 μΩ-cm. The deposition conditions significantly affect the deposit morphology and profile. In particular, increasing the hydrogen pressure increases the linewidth but reduces the thickness. Mass transport phenomena are invoked to explain these effects.

Determination of Subnanosecond Fluorescence Lifetimes with a UHF Television Tuner and a cw or Mode-Locked Laser

1986 ◽  
Vol 40 (5) ◽  
pp. 683-687 ◽  
Author(s):  
Frank V. Bright ◽  
Daniel A. Wilson ◽  
Gary M. Hieftje
Keyword(s):  
High Frequency ◽  
Rhodamine 6G ◽  
Instrument Design ◽  
Fluorescence Lifetimes ◽  
New Approach ◽  
Ion Laser ◽  
Subnanosecond Fluorescence ◽  
Argon Ion ◽  
Good Agreement

An inexpensive ultra-high-frequency (UHF) television tuner and an argon-ion laser are employed for the determination of excited-state lifetimes of a series of common fluorophores. Fluorescence lifetimes are determined in the frequency domain; the results are in good agreement with previously reported values and demonstrate the utility of the new approach for subnanosecond measurements. Binary mixtures of rhodamine 6G and rose bengal can also be resolved with the use of this novel instrument design.

Scattering Tomography and Its Application to Sooting Diffusion Flames

1994 ◽  
Vol 116 (1) ◽  
pp. 144-151 ◽  
Author(s):  
M. P. Mengu¨c¸ ◽  
P. Dutta
Keyword(s):  
Diffusion Flames ◽  
Tomographic Reconstruction ◽  
Scattering Coefficient ◽  
Reconstruction Technique ◽  
Transmission Tomography ◽  
Ion Laser ◽  
Series Of Experiments ◽  
Argon Ion ◽  
Good Agreement

A new analytical tomographic reconstruction technique was developed for the determination of the extinction and scattering coefficient distributions in axisymmetric media. This method, called “scattering tomography,” was tested for several particle concentration profiles corresponding to those for diffusion flames. After that, a series of experiments were performed on sooting acetylene flames using an argon-ion laser nephelometer. The experimental results were reduced using both the transmission and scattering tomography techniques to obtain the extinction coefficient profiles. It was shown that in the center of the flame, the results from these two approaches were in good agreement. Scattering tomography can be used to determine both the absorption and scattering coefficient distributions in the medium. In addition to that, it is preferable over the transmission tomography if the medium is optically very thin and particles are predominantly scattering.

Silicon Growth Rate Enhancement Using Trisilane in a Laser Direct-Writing Technique

1995 ◽  
Vol 397 ◽  
Author(s):  
S. Boughaba ◽  
G. Auvert
Keyword(s):  
Surface Temperature ◽  
Gas Pressure ◽  
Direct Writing ◽  
Laser Direct Writing ◽  
Multilayered Structures ◽  
Deposition Rates ◽  
Micron Size ◽  
Ion Laser ◽  
Silicon Growth ◽  
Argon Ion

ABSTRACTAn argon-ion laser based direct-writing technique was used to deposit micron-size silicon lines from the decomposition of silane (SiH4) and trisilane (Si3H8) gases. The substrates used were 0.1 μrn polysilicon/1 μ.m silicon dioxide/<100> monosilicon multilayered structures. The vertical silicon deposition rate was investigated as a function of the laser-induced surface temperature and gas pressure. For temperatures ranging between 1000 and 1410 °C, the pressure was varied in the range 5-250 mbar and 0.1-30 mbar for SiH4 and Si3H8, respectively. For both gases, three growth regimes could be distinguished according to precursor pressure. The deposition rates achieved using trisilane are far higher than those obtained with silane in spite of the use of a reduced gas pressure range. For a laser-induced surface temperature of 1300 °C and a precursor pressure of 10 mbar, the deposition rates achieved using SiH4 and Si3H8 are, respectively, 0.42 and 20 μ.m/s, representing an enhancement factor of 50 with the later.

A New Technique for the Elimination of Fluorescence Interference in Raman Spectroscopy

1986 ◽  
Vol 40 (5) ◽  
pp. 583-587 ◽  
Author(s):  
Frank V. Bright ◽  
Gary M. Hieftje
Keyword(s):  
Raman Spectroscopy ◽  
Rhodamine 6G ◽  
Microwave Spectrum ◽  
New Instrument ◽  
Ion Laser ◽  
A New Technique ◽  
Relative Errors ◽  
Argon Ion ◽  
Raman Scatter ◽  
Good Agreement

A new instrument for Raman spectroscopy has been constructed with the use of a cw or mode-locked argon-ion laser as the excitation source and a microwave spectrum analyzer for discrimination between fluorescence and Raman scatter. To demonstrate the new instrument's capability, the weak Raman scatter of water was resolved from the intense fluorescence from rhodamine 6G. Theoretically predicted relative errors in the new procedure are calculated and experimental results are shown to be in good agreement with theory.

scholarly journals Warzywnictwo jako kierunek produkcji rolniczej w województwie łódzkim = Vegetable growing as a trend in agricultural production of the Łódzkie Voivodeship

2018 ◽  
Vol 52 ◽  
pp. 199-210
Author(s):  
Anna Traczyk ◽  
Marcin Wójcik
Keyword(s):  
Growth Rate ◽  
Agricultural Production ◽  
Average Rate ◽  
Plant Production ◽  
Large Area ◽  
Average Growth Rate ◽  
Average Growth ◽  
Production Trend ◽  
Market Production ◽  
Vegetable Cultivation

Vegetable-growing is an important agricultural production trend in the Łódzkie Voivodeship. Its significance to the economy is emphasized in the voivodeship strategic documents, in which vegetable-growing is mentioned as one of the regional assets. Areas of its occurrence have been considered to present development potential. Vegetable cultivation in the Łódzkie Voivodeship occupies a relatively large area compared to the other regions. In years 2004–2016 the Łódzkie Voivodeship took the fourth place in terms of the area of vegetable cultivation and third place regarding share of vegetables in the sown area. Analyzed had the third largest share of vegetables in the value of total and market agricultural production. In the years 2004–2016, both the area of vegetable cultivation and the size of harvest in the Łódzkie Voivodeship decreased. The area of soil-grown vegetables cultivation decreased at an average rate of 2.9% per annum, while the size of crops decreased at an average rate of 1.0% a year. Despite the decline in the area of vegetable cultivation and the size of harvest, vegetable-growing remained an important part of the regional agricultural economy. In the analyzed period, vegetables accounted for 9.7% of the total value and 11.8% of the market value of agricultural production. Their share in the value of total and market production of agriculture, in contrast to the area and harvest, increased. The average growth rate of the share of vegetables in the value of total agricultural production was 2.9% per annum. The average growth rate of vegetables share in the value of market production was 2.1% per annum. In terms of participating in the value of total plant production, vegetables took the second place in Poland. Considering the share in the value of market production, vegetables were ranked first. The region’s vegetable growing area provides economic grounds for the functioning of the vegetable and fruit-vegetable processing industry for enterprises operating both in the Łódzkie Voivodeship and in the neighboring regions.

Direct Writing of Copper Lines From Copper Formate Film

1987 ◽  
Vol 101 ◽  
Author(s):  
Arunava Gupta ◽  
Rangarajan Jagannathan
Keyword(s):  
Temperature Distribution ◽  
Silicon Substrate ◽  
Decomposition Temperature ◽  
Silicon Substrates ◽  
Direct Writing ◽  
Rapid Decomposition ◽  
Copper Formate ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

ABSTRACTThe focused output from an argon ion laser (514 nm) has been used for direct writing of copper by photothermal decomposition of copper formate film on quartz and silicon substrates. The low decomposition temperature of the metallo-organic (∼200°C) allows deposition of fairlys thick copper lines at writing speeds as high as 10 mm/sec. The processing can be done in air since the rapid decomposition and cooling under scanning condition results in minimal oxidation of the deposited copper. The temperature distribution produced during laser writing on silicon substrate has been calculated to help explain some of the observed results.

Photochemical deposition and characterization of Al2O3 and TiO2

1988 ◽  
Vol 3 (6) ◽  
pp. 1151-1157 ◽  
Author(s):  
M. D. Hudson ◽  
C. Trundle ◽  
C. J. Brierley
Keyword(s):  
Loss Factor ◽  
Anatase Phase ◽  
Light Sources ◽  
Electrical Measurements ◽  
Photochemical Deposition ◽  
Ion Laser ◽  
Organic Precursors ◽  
Argon Ion ◽  
Good Agreement

Thin films of aluminum oxide and titanium dioxide have been deposited onto gallium arsenide at low temperatures (<200 °C). A high-pressure xenon–mercury are lamp (1 kW) and a frequency doubled argon ion laser (100 mW at 257 nm) have been used as illumination sources Suitable volatile metallo-organic precursors have been synthesized with strong absorptions at the wavelengths of the light sources. The Al2O3 or TiO2 layers grown at 200 °C or less are amorphous although the anatase phase of TiO2 is deposited at temperatures over 350 °C. Ellipsometry has been used to measure the thickness and refractive index of the films. Films have been deposited onto gold on silicon in order to make simple electrical measurements. Resistivity, dielectric constant, loss factor, and breakdown voltage have been measured. The results shows values in good agreement with the results published on films grown by other CVD techniques using much higher temperatures.

Experimental Investigations of Annular Liquid Curtains

1990 ◽  
Vol 112 (1) ◽  
pp. 61-66 ◽  
Author(s):  
K. D. Kihm ◽  
N. A. Chigier
Keyword(s):  
Laser Doppler Velocimeter ◽  
Experimental Investigations ◽  
Photographic Recording ◽  
Recording Technique ◽  
Argon Ion Laser ◽  
Theoretical Predictions ◽  
Ion Laser ◽  
Free Falling ◽  
Argon Ion ◽  
Good Agreement

Experiments have been performed to study the dynamics of vertical annular liquid curtains. Using a high and a low speed photographic recording technique, different modes of curtain formation have been visualized: (a) nonpressurized curtain, (b) pressurized steady curtain, (c) pressurized oscillating curtain, and (d) punctured curtain. The velocity of the liquid was measured by an argon-ion laser Doppler velocimeter, and results were compared with free falling motion. The convergence length of the curtain was measured as a function of the pressure differential for different Froude and Weber numbers, and for different nozzle gap widths. The experimental data agree well with existing theoretical predictions for steady curtains. For harmonically oscillating curtains, the average values of minimum and maximum convergence lengths show fairly good agreement with the theory.

Laser-Excited Emission from Glyoxal and Its Deuterated Derivatives

1973 ◽  
Vol 51 (14) ◽  
pp. 1491-1496 ◽  
Author(s):  
Ronald Y. Dong ◽  
D. A. Ramsay
Keyword(s):  
Emission Spectra ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Vibrational Constants ◽  
Argon Ion ◽  
Good Agreement

Emission spectra of glyoxal, glyoxal-d1, and glyoxal-d2 have been excited using the various lines of an argon ion laser. The bands have been assigned to 3 band systems, viz. the 1Au–1Ag and 3Au–1Ag (π*–n) systems of the trans molecule and the 1B1–1A1 (π*–n) system of the cis molecule. The vibrational constants are in good agreement with earlier values. Some new vibrational constants have been determined.

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