The optical and electrical properties of silver azide and their relation to its decomposition

1958 ◽  
Vol 246 (1245) ◽  
pp. 250-253 ◽  
Keyword(s):  
Electrical Properties ◽  
Absorption Band ◽  
Room Temperature ◽  
Dielectric Constants ◽  
Optical And Electrical Properties ◽  
Silver Azide ◽  
Photo Conductivity ◽  
Mechanism And Kinetics ◽  
Kinetics Of ◽  
Absorption Measurements

In order to gain more information of the mechanism and kinetics of the decomposition of the metallic azides, we have recently made measurements of the high- and low- (radio-) frequency dielectric constants, the optical absorption, and the photo conductivity of silver azide. A complete description of this work has already bee published (McLaren & Rogers 1957) and therefore only a summary of the main results and conclusions will be given here. The absorption measurements have shown that for crystals ca . 4 x 10 -3 cm thick no measurable transmission occurs at wavelengths shorter than ca . 3000 Å, and that at liquid-air temperature there is an absorption band at 3590 Å which is not resolve at room temperature; these results have been interpreted in terms of the formation of excitons.

Optical and electrical properties and simulation curves of NiO/Al/NiO transparent conductive film

2019 ◽  
Vol 33 (01) ◽  
pp. 1850417 ◽  
Author(s):  
Shuyun Wang ◽  
Kailin Wen ◽  
Yang Sun ◽  
Xianwu Xiu ◽  
Shuyun Teng ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Film ◽  
Room Temperature ◽  
Optical And Electrical Properties ◽  
Light Wavelength ◽  
Conductive Films ◽  
Conductive Film ◽  
Average Transmittance ◽  
Interface Characteristics ◽  
Experimental Data Analysis

In this paper, NiO/Al/NiO transparent conductive films were prepared by magnetron sputtering at the room temperature. Effects of the NiO and Al layers thicknesses on the optical and electrical properties of the NiO/Al/NiO laminated films were analyzed. When the light wavelength falls in range 300–900 nm, with the increase of the NiO and Al layers thicknesses, the transmittance of the laminated film first increases significantly and then decreases slightly, finally tends to be stable. The laminated film obtained the best optical and electrical properties when the NiO layer is 40 nm and the Al layer is 12 nm. The maximum transmittance is 83%, the average transmittance is 77.3%, the film resistivity is [Formula: see text] and the carrier concentration is [Formula: see text]. At the same time, the transmittance of laminated film is simulated by FDTD software. But the simulation curve is different from the experimental data. Analysis results show that, with the NiO dielectric is added on both sides of the metal Al film, the light reflection characteristic of laminated film has been completely different from that of the single Al metal film because of the change of interface characteristics between Al film and NiO film, and the actual luminous transmittance greatly increases.

Optical and Electrical Properties of Cd Te Laser-Synthetized

1982 ◽  
Vol 13 ◽  
Author(s):  
L. Baufay ◽  
A. Pigeolet ◽  
R. Andrew ◽  
L.D. Laude
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Electrical Characterization ◽  
Point Of View ◽  
Optical And Electrical Properties ◽  
Impurity States ◽  
Absorption Measurements ◽  
Forbidden Gap

ABSTRACTOptical and electrical characterization of CdTe synthetized by laser irradiationofamultilayer film of alternately Cd and Te is achieved. Optical absorption measurements evidence the good quality of these films and show that they have behaviour comparable to the single crystal. The influence of the irradiation conditions on the electrical properties of such CdTe films is discussed; they are compared to single crystal from the point of view of resistivity. It is shown that it is possible to prepare by this means samples devoid of impurity states in the middle of the forbidden gap. Finally, the ohmicity of Au, Al, Cr, ITO and non irradiated Cd/Te sandwich contacts is tested.

Effect of Sodium Hypophosphite Content in the Electroplating Bath on the Electrochemical Properties of Ni-P Alloy Coatings

2015 ◽  
Vol 228 ◽  
pp. 246-251
Author(s):  
Magdalena Popczyk ◽  
B. Łosiewicz
Keyword(s):  
Room Temperature ◽  
Intrinsic Activity ◽  
Sodium Hypophosphite ◽  
Nickel Plating ◽  
Plating Bath ◽  
Mechanism And Kinetics ◽  
Constant Phase Elements ◽  
Different Content ◽  
Kinetics Of ◽  
Deposition Current Density

Porous Ni-P alloy coatings were prepared by galvanostatic electrodeposition at the deposition current density ofjdep= -250 mA cm-2from the nickel plating bath of the Watts type containing different content of sodium hypophosphite. Investigations of hydrogen evolution reaction (HER) were carried out in 5 M KOH solution at room temperature.Acimpedance behavior of the electrodes was described using electrical equivalent circuits containing two constant-phase elements (two-CPEs electrode model). The results obtained from the EIS and steady-state measurements allowed to determine the Volmer-Heyrovský mechanism and kinetics of the HER. It was found that for the Ni-P alloy coatings deposited from the galvanic baths after addition of sodium hypophosphite in the amount of 5, 10, 20 and 30 g dm-3, the decrease in their catalytic activity towards the HER is observed due to diminishing of intrinsic activity of the electrodes.

scholarly journals Optical and Electrical Properties of Undoped Microcrystalline Silicon Deposited by the VHF-GD with Different Dilutions of Silane in Hydrogen

1996 ◽  
Vol 452 ◽  
Author(s):  
N. Beck ◽  
P. Orres ◽  
J. Fric ◽  
Z. Remeš ◽  
A. Poruba ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Time Of Flight ◽  
Optical And Electrical Properties ◽  
Microcrystalline Silicon ◽  
Transient Time ◽  
Deep Traps ◽  
Flight Measurements ◽  
Strong Dilution

AbstractWe show that the optical and electrical properties of microcrystalline silicon (μc-Si:H) deposited by the VHF-GD technique at 110 MHz can considerably be tuned by changing the dilution ratio of silane to hydrogen.With increasing silane dilution we observe enhanced optical absorption for energies below 2 eV due to the transition of the material from amorphous / microcrystalline mixture to a pure microcrystalline phase. Simultaneously, the light scattering and the defect absorption increases. Strong dilution also promotes the incorporation of impurities into the material, leading to a pronounced extrinsic behaviour as seen from the decrease of the activiation energy of the electrical conductivity.The electrical properties were investigated in the dark by the Time of Flight technique. We measured drift mobilities at room temperature which slightly increase with dilution, reaching values of 3 cm2/Vs for electrons and 1.2 cm2/Vs for holes. The ratio between electron and hole drift mobilities is found to be around 2 for all samples studied, similar to that of crystalline silicon.Furthermore, post-transient Time of Flight measurements revealed detrimental electron deep traps in low dilution material.

Optimization of IGZO/Cu/IGZO Multilayers as Transparent Composite Electrode on Flexible Substrate by Room-temperature Sputtering and Post-Deposition Anneals

2013 ◽  
Vol 1577 ◽  
Author(s):  
Aritra Dhar ◽  
T. L. Alford
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sheet Resistance ◽  
Room Temperature ◽  
Flexible Substrate ◽  
Middle Layer ◽  
Optical Transmittance ◽  
Optical And Electrical Properties ◽  
Composite Electrodes ◽  
Transparent Composite

ABSTRACTHighly transparent composite electrodes made of multilayers of In- and Ga-doped ZnO and Cu (IGZO/Cu/IGZO) thin films (30/3-9/30 nm thick) are deposited onto flexible substrates at room temperature and by using radio frequency magnetron sputtering. The effect of Cu thickness on the electrical and optical properties of the multilayer stack has been studied in accordance with the Cu morphology. The optical and electrical properties of the multilayers are studied with the UV–Vis spectrophotometry, Hall measurement and four point probe analyses. Results are compared with those from a single IGZO layered thin film. The average optical transmittance and sheet resistance both decreases with increase of copper thickness and has been optimized at 6 nm Cu middle layer thickness. The Haacke figure of merit (FOM) has been calculated to evaluate the performance of the films. The highest FOM achieved is 6 x 10-3 Ω-1 for a Cu thickness of 6 nm with a sheet resistance of 12.2 Ω/sq and an average transmittance of 86%. The multilayered thin films are annealed upto 150 °C in vacuum, forming gas and O2 environments and the optical and electrical properties are studied and compared against the as-deposited samples. Thus IGZO/Cu/IGZO multilayer is a promising flexible electrode material for the next-generation flexible optoelectronics.

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