Effect of Implantation Conditions on the Microstructure of High-Current, Oxygen Implanted Silicon-on-Insulator Material

1989 ◽  
Vol 157 ◽  
Author(s):  
S. Visitsemgtrakul ◽  
B.F. Cordts ◽  
S. Krause
Keyword(s):  
Defect Formation ◽  
Silicon Layer ◽  
High Resolution Electron Microscopy ◽  
Silicon On Insulator ◽  
Structural Development ◽  
Implantation Temperature ◽  
Resolution Electron ◽  
Significant Difference ◽  
New Type ◽  
Current Densities

ABSTRACTConventional and high resolution electron microscopy were used to study structural development in silicon-on-insulator material produced by oxygen implantation at temperatures of 525 to 700°C, doses of 0.3 to 1.8 × 1018 cm-2, and current densities of 1 and 10 mA/cm2. Implantation temperature has the strongest effect on the microstructure and defect formation, both in as-implanted and annealed material. In the top silicon layer of as-implanted SIMOX, oxygen bubbles form near the surface when the wafer temperature is ≥ 550°C. A new type of defect, the multiply faulted defect (MFD), has been observed at the upper edge of the implantation region with a density of 108 cm-2 in the samples implanted at the temperature of ≥ 600°C. As dose increases from 0.3 to 1.8 × 1018 cm-2, the bubbles grow larger and the trails of bubbles lengthen while the character and density of MFDs remain the same. A continuous buried oxide layer forms at doses ≥ 1.5 × 1018 cm2. No significant difference in structure is observed when a current-density increases from 1 to 10 mA/cm2.

Defect formation in oxygen-multiply implanted silicon-on-insulator material

1995 ◽  
Vol 53 ◽  
pp. 448-449
Author(s):  
J.C. Park ◽  
J.D. Lee ◽  
S.J. Krause
Keyword(s):  
Electron Microscopy ◽  
Defect Formation ◽  
High Resolution Electron Microscopy ◽  
Dark Field ◽  
Silicon On Insulator ◽  
High Dose ◽  
Plan View ◽  
Weak Beam ◽  
Resolution Electron ◽  
Reduced Power Consumption

High dose oxygen implantation (SIMOX) has been a successful fabrication technology of silicon-on-insulator (SOI) material for CMOS circuits with reduced power consumption and higher operating speed. However, high density (~108 cm-2) of the through-thickness defects (TTD) in the top Si layer of SIMOX is one of the most serious problems. Hill et al. reported multiple implant/anneal method to remarkably reduce defect densities to <104 cm-2. In the multiple implant/anneal material, however, ~106 cm2 of the final dominant defects, including stacking fault pyramids (SFP) and the precipitate-dislocation complexes (PDC), still remained after high temperature annealing. In this work, the microstructures and formation mechanism of the final defects were studied by various TEM techniques.Silicon (100) wafers were sequentially triple implanted to doses of 6/6/6×l017 at 200kev and 620°C. After each implantation the wafers were held at 1000°C for 2 hours and annealed at 1325°C for 4 hours in argon ambient plus 5% oxygen. Cross-section (XTEM) and plan-view (PTEM) transmission electron microscopy specimens were examined by using a weak beam dark field (WBDF) and high resolution electron microscopy (HREM) techniques in JEM 2000FX and Topcon 002B operating at 200kev.

Precipitate and Defect Formation in Oxygen Implanted Silicon-on-Insulator Material

1987 ◽  
Vol 107 ◽  
Author(s):  
S.J. Krause ◽  
C.O. Jung ◽  
T.S. Ravi ◽  
S.R. Wilson ◽  
D.E. Burke
Keyword(s):  
Defect Formation ◽  
High Resolution Electron Microscopy ◽  
Superficial Layer ◽  
Silicon On Insulator ◽  
Precipitate Size ◽  
High Dose ◽  
High Heating Rate ◽  
Threading Dislocations ◽  
Resolution Electron ◽  
Annealing Cycle

AbstractThe formation and structure of defects and precipitates in high-dose oxygen implanted silicon-on-insulator material was directly studied by weak beam and high resolution electron microscopy. In as-implanted material, the edge of the oxygen implant profile contained 1.5 nm diameter precipitates at a density of 1019 cm2. Defects, including micrctwins, stacking faults, and (311) defects, were present in as-implanted material but no threading or loop dislocations were observed. This suggests that threading dislocations are formed in the thermal ramping and annealing cycle. In material annealed for different times and temperatures precipitate size was much more dependent on peak temperature rather than time-at-temperature indicating that oxygen diffusion distance is less important than thermodynamic factors in controlling precipitate size. Annealing from 1150°C to 1250°C produced threading dislocations and possible dislocation dipoles which extended through the superficial layer. Transient annealing of very low dose oxygen implanted Si produced loop and threading dislocations. This suggests that a high heating rate during precipitation will generate excess Si interstitials at a rate high enough to create high stresses at precipitates and form dislocations. A qualitative model for dislocation formation is proposed and processing conditions for reducing dislocation density are suggested.

Xenon ion irradiation of superconducting YBa2Cu3O7 thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 92-93
Author(s):  
H. Watanabe ◽  
B. Kabius ◽  
B. Roas ◽  
K. Urban
Keyword(s):  
Defect Formation ◽  
Ion Irradiation ◽  
High Resolution Electron Microscopy ◽  
Structural Disorder ◽  
Flux Lines ◽  
Pinning Effect ◽  
Magnetic Flux Lines ◽  
Resolution Electron ◽  
Radiation Induced ◽  
Induced Defects

Recently it was reported that the critical current density(Jc) of YBa2Cu2O7, in the presence of magnetic field, is enhanced by ion irradiation. The enhancement is thought to be due to the pinning of the magnetic flux lines by radiation-induced defects or by structural disorder. The aim of the present study was to understand the fundamental mechanisms of the defect formation in association with the pinning effect in YBa2Cu3O7 by means of high-resolution electron microscopy(HRTEM).The YBa2Cu3O7 specimens were prepared by laser ablation in an insitu process. During deposition, a substrate temperature and oxygen atmosphere were kept at about 1073 K and 0.4 mbar, respectively. In this way high quality epitaxially films can be obtained with the caxis parallel to the <100 > SrTiO3 substrate normal. The specimens were irradiated at a temperature of 77 K with 173 MeV Xe ions up to a dose of 3.0 × 1016 m−2.

Silicon-Sapphire Interface: A High Resolution Electron Microscopy Study

1980 ◽  
Vol 2 ◽  
Author(s):  
Fernando A. Ponce
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Silicon Layer ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Resolution Limit ◽  
High Concentration ◽  
Transmission Electron ◽  
Resolution Electron

ABSTRACTThe structure of the silicon-sapphire interface of CVD silicon on a (1102) sapphire substrate has been studied in crøss section by high resolution transmission electron microscopy. Multibeam images of the interface region have been obtained where both the silicon and sapphire lattices are directly resolved. The interface is observed to be planar and abrupt to the instrument resolution limit of 3 Å. No interfacial phase is evident. Defects are inhomogeneously distributed at the interface: relatively defect-free regions are observed in the silicon layer in addition to regions with high concentration of defects.

Structure of twinned {113} defects in high-dose oxygen implanted silicon-on-insulator material

1991 ◽  
Vol 6 (4) ◽  
pp. 792-795 ◽  
Author(s):  
Supapan Visitserngtrakul ◽  
Stephen J. Krause ◽  
John C. Barry
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Oxide Layer ◽  
High Resolution Electron Microscopy ◽  
Silicon On Insulator ◽  
High Dose ◽  
Diamond Structure ◽  
Bulk Silicon ◽  
Coherent Interface ◽  
Resolution Electron

Conventional and high resolution electron microscopy (HREM) were used to study the structure of {113} defects in high-dose oxygen implanted silicon. The defects are created with a density of 1011 cm−2 below the buried oxide layer in the substrate region. The HREM images of the {113} defects are similar to the ribbon-like defects in bulk silicon. It is proposed that there is a third possible structure of the defects, in addition to coesite and/or hexagonal structures. Portions of some defects exhibit the original cubic diamond structure which is twinned across {115} planes. The atomic model shows that the {115} interface is a coherent interface with alternating five- and seven-membered rings and no dangling bonds.

Twinning Structure of {113} Defects in High-Dose Oxygen Implanted Silicon-on-Insulator Material.

1989 ◽  
Vol 163 ◽  
Author(s):  
S. Visitserngtrakul ◽  
J. Barry ◽  
S. Krause
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Oxide Layer ◽  
High Resolution Electron Microscopy ◽  
Silicon On Insulator ◽  
High Dose ◽  
Diamond Structure ◽  
Bulk Silicon ◽  
Coherent Interface ◽  
Resolution Electron

AbstractConventional and high resolution electron microscopy (HREM) were used to study the structure of the {113} defects in high-dose oxygen implanted silicon. The defects are created with a density of 1011 cm-2 below the buried oxide layer in the substrate region. The {113} defects are similar to the ribbon-like defects in bulk silicon. Our HREM observations show that two crystalline phases are present in the defect. Portions of the defects exhibit the original cubic diamond structure which is twinned across {115} planes. The atomic model shows that the {115} interface is a coherent interface with alternating five- and seven-membered rings and no dangling bonds.

Effect of temperature on defect formation during oxygen implantation of silicon-on-insulator material

1990 ◽  
Vol 48 (4) ◽  
pp. 578-579
Author(s):  
C. O. Jung ◽  
S. Visitsemgtrakul ◽  
S.J. Krause ◽  
P. Roitman ◽  
B. Cordts
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Defect Structure ◽  
Defect Formation ◽  
Silicon On Insulator ◽  
Effect Of Temperature ◽  
Implantation Temperature ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Oxygen implanted silicon-on-insulator material, SIMOX, (Separation by IMplanted Oxygen) provides improved speed and radiation hardness over bulk silicon for integrated circuits which are built on the thin superficial Si layer above the buried oxide layer. A high quality superficial Si layer is required, but may be degraded by high defect densities of 109 to 1010 cm-2 in annealed SIMOX. Defect densities have been reduced down to 106cm-2 or less. They were achieved with a final high temperature annealing step (1300-1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. The defect structure developed during implantation, which is strongly affected by temperature, plays a significant role in the defect structure in the annealed material. In this work we are reporting on the effect of implantation temperature on defect formation and also some new details on the structure of the defects that are present.

Multiply faulted defects in high-current oxygen-implanted silicon-on-insulator

1989 ◽  
Vol 47 ◽  
pp. 606-607
Author(s):  
S. Visitserngtrakul
Keyword(s):  
Electron Microscopy ◽  
High Resolution Electron Microscopy ◽  
Beam Current ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Current ◽  
Implantation Time ◽  
Resolution Electron ◽  
Beam Currents ◽  
Very High

High-dose oxygen implantation into silicon, SIMOX (separation by implantation of oxygen), is a leading technique for producing silicon-on-insulator (SOI) material. Most studies have examined SIMOX prepared with a traditional implanter, which has beam currents of 100 to 400 μA. Since the formation of SIMOX requires a very high dose of oxygen, typically one hundred times larger than the standard dopant implant doses, the process takes many hours. Recently, a high-current implanter has been developed for SIMOX fabrication, which produces a 40 mA beam current. However, the higher current density has not only shortened the implantation time, but also produced features not routinely observed in samples implanted at much lower currents. The study reported here used conventional transmission and high resolution electron microscopy (CTEM,HREM) to characterize microstructure and defects in SIMOX implanted at high currents.

Crystallization of InSb Phase Near the Bonding Interface of Silicon-on-Insulator Structure

2007 ◽  
Vol 131-133 ◽  
pp. 137-142
Author(s):  
Ida E. Tyschenko ◽  
A.G. Cherkov ◽  
M. Voelskow ◽  
V.P. Popov
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
High Resolution Electron Microscopy ◽  
Sio2 Layer ◽  
Silicon On Insulator ◽  
Bonding Interface ◽  
Experimental Results ◽  
Resolution Electron

The behavior of Sb and In atoms embedded into silicon-on-insulator structure (SOI) near the bonding interface was investigated as a function of annealing temperature. Two kinds of the ionimplanted SOI structures were prepared. First kind of the structures contained the buried SiO2 layer implanted with In+ and Sb+ ions near the top Si/SiO2 interface. In second kind, the ion-implanted regions were placed on each side of the bonding interface: Sb+ ions were implanted into Si film; In+ ions were implanted into SiO2 layer. Rutherford backscattering spectrometry (RBS) and crosssectional high-resolution electron microscopy (XTEM) were employed to study the properties of the prepared structures. The formation of InSb nanocrystals was observed within the SiO2 bulk from first kind of the SOI structures as annealing temperature increased to 1100o C. In the case of the double side implanted SOI structures, an increase in annealing temperature to 1100o C was accompanied by the up-hill diffusion of In atoms from the SiO2 bulk toward the bonding interface and by the endotaxial growth of InSb nanocrystals on the top Si/SiO2 interface. It was concluded from the experimental results that Sb atoms were the nucleation centers of InSb phase.

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