Effect of temperature on defect formation during oxygen implantation of silicon-on-insulator material

1990 ◽  
Vol 48 (4) ◽  
pp. 578-579
Author(s):  
C. O. Jung ◽  
S. Visitsemgtrakul ◽  
S.J. Krause ◽  
P. Roitman ◽  
B. Cordts
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Defect Structure ◽  
Defect Formation ◽  
Silicon On Insulator ◽  
Effect Of Temperature ◽  
Implantation Temperature ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Oxygen implanted silicon-on-insulator material, SIMOX, (Separation by IMplanted Oxygen) provides improved speed and radiation hardness over bulk silicon for integrated circuits which are built on the thin superficial Si layer above the buried oxide layer. A high quality superficial Si layer is required, but may be degraded by high defect densities of 109 to 1010 cm-2 in annealed SIMOX. Defect densities have been reduced down to 106cm-2 or less. They were achieved with a final high temperature annealing step (1300-1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. The defect structure developed during implantation, which is strongly affected by temperature, plays a significant role in the defect structure in the annealed material. In this work we are reporting on the effect of implantation temperature on defect formation and also some new details on the structure of the defects that are present.

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

scholarly journals High Temperature Silicon Integrated Circuits and Passive Components for Commercial and Military Applications

1998 ◽  
Author(s):  
Richard R. Grzybowski ◽  
Ben Gingrich
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
Elevated Temperatures ◽  
Silicon On Insulator ◽  
Passive Component ◽  
Oil Well ◽  
Automotive Electronics ◽  
Passive Components ◽  
Silicon Integrated Circuits

Advances in silicon-on-insulator (SOI) integrated circuit technology and the steady development of wider band gap semiconductors like silicon carbide are enabling the practical deployment of high temperature electronics. High temperature civilian and military electronics applications include distributed controls for aircraft, automotive electronics, electric vehicles and instrumentation for geothermal wells, oil well logging and nuclear reactors. While integrated circuits are key to the realization of complete high temperature electronic systems, passive components including resistors, capacitors, magnetics and crystals are also required. This paper will present characterization data obtained from a number of silicon high temperature integrated evaluated over a range of elevated temperatures and aged at a selected high temperature. This paper will also present a representative cross section of high temperature passive component characterization data for device types needed by many applications. Device types represented will include both small signal and power resistors and capacitors. Specific problems encountered with the employment of these devices in harsh environments will be discussed for each family of components. The goal in presenting this information is to demonstrate the viability of a significant number of commercially available silicon integrated circuits and passive components that operate at elevated temperatures as well as to encourage component suppliers to continue to optimize a selection of their product offerings for operation at higher temperatures. In addition, systems designers will be encouraged to view this information with an eye toward the conception and implementation of reliable and affordable high temperature systems.

Formation of stacking-fault tetrahedra in low defect density oxygen-implanted silicon-on-insulator material

1992 ◽  
Vol 50 (2) ◽  
pp. 1402-1403
Author(s):  
June-Dong Lee ◽  
Stephen Krause ◽  
Peter Roitman
Keyword(s):  
Integrated Circuits ◽  
Defect Density ◽  
Silicon Layer ◽  
Stacking Fault ◽  
Silicon On Insulator ◽  
Threading Dislocations ◽  
Annealing Conditions ◽  
Stacking Fault Tetrahedra ◽  
Higher Temperature ◽  
Defect Densities

Fabrication of integrated circuits on SOI (Silicon-On-Insulator) material is very attractive because it offers high component density, immunity to latch-up and radiation hardness. Among various SOI techniques SIMOX Separation by IMplantation of OXygen) provides the best material, with carrier mobilities and defect densities approaching bulk silicon values, Early SIMOX wafers were implanted at temperatures below 600°C and annealed at high temperature (>1300°C), which gave a high defect density (109cm−2), including threading dislocations and narrow stacking faults (SFs), as shown in Figure 1. Higher temperature (>600°C) implantation of SIMOX reduced defect densities to 106cm-2 with pairs of narrow SFs in the top silicon layer, as shown in Figure 2. This paper describes a further reduction of defect density in SIMOX material through various annealing conditions, which has resulted in a defect density less than 105cm−2. A new formation mechanism for stacking fault tetrahedra is also discussed.Silicon (100) wafers were sequentially implanted (620°C) and annealed (at 1320°C for 5 hours) to doses of 0.5, 0.5, and 0.8×l018cm-2.

scholarly journals Enhanced High Temperature Power Controller

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000134-000138
Author(s):  
Joseph A. Henfling ◽  
Stan Atcitty ◽  
Frank Maldonado
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Smart Grid ◽  
Implementation Strategy ◽  
Silicon On Insulator ◽  
The Other ◽  
Power Controller ◽  
Soi Technology

This paper describes an implementation strategy used to develop a high temperature power controller. The system is based on using high-temperature (HT) silicon-on-insulator (SOI) technology with silicon carbide (SiC) based integrated circuits (ICs) to create an efficient, high-temperature power controller. Two drives were tested with this system, one using normally off JFET switching and the other using MOSFET switching. Normally off JFETs made from SiC were used to drive the output loads. Such circuit designs will improve the efficiency of future smart grid power controllers.

Effect of Thermal ramping rate on defect formation in oxygen-implanted silicon-on-insulator material

1992 ◽  
Vol 50 (2) ◽  
pp. 1400-1401
Author(s):  
Ju-Chul Park ◽  
Stephen Krause ◽  
Mohammed El-Ghor
Keyword(s):  
Integrated Circuits ◽  
Cross Sections ◽  
Defect Formation ◽  
Semiconductor Device ◽  
Defect Density ◽  
Silicon On Insulator ◽  
High Dose ◽  
Ramp Rate ◽  
Rapid Thermal Anneal ◽  
Temperature Capability

Integrated circuits on SIMOX (Separation by IMplantation of OXygen) have higher speed, radiation hardness, and higher temperature capability. Defects in the top Si layer inhibit bipolar applications and may affect CMOS(Complementary Metal-On-Semiconductor) device yield, operation and reliability. As-implanted SIMOX has many types of defects, including short stacking faults(SFs), multiply faulted defects(MFDs), and {113} defects. In annealed SIMOX, new defects form during the ramping cycle. The effect of thermal ramping rate on the development of new defects has received only limited study. In this work, the effects of rapid thermal annealing(RTA) and thermal ramp rate on defect density and structural change were studied.Two set of samples were prepared with different oxygen doses. First, one set of (100) Si wafers was implanted with a high dose of 1.8×l018cm−2 at 200 KeV at 620°C. A rapid thermal anneal(RTA) wafer was obtained from a lamp anneal for 1 minute at 1320°C using a ramp rate of 50°C/sec. A portion of this sample was then conventionally annealed in a tube furnace for 5 hours at 1320°C. Another set of (100) Si wafers was implanted with a low dose of 3×l015cm−2 at 25°C. Different samples were then annealed at 1250°C for 30 sec using three ramp rates of 50°C/sec, l°C/sec and 0.1°C/sec. Cross-sections of the samples were studied with conventional transmission electron microscopy (CTEM) at 200 KeV.

Precipitation in silicon-on-insulator material during high- temperature annealing

1987 ◽  
Vol 45 ◽  
pp. 254-255
Author(s):  
S. J. Krause ◽  
C. O. Jung ◽  
S.R. Wilson
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Annealing Time ◽  
High Speed ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
Precipitate Size ◽  
High Dose ◽  
High Temperature Annealing ◽  
Implantation Energy

Silicon-on-insulator (SOI) structure by high dose oxygen implantation (SIMOX) has excellent potential for use in radiation hardened and high speed integrated circuits. Device fabrication in SIMOX requires a high quality superficial Si layer above the buried oxide layer. Previously we reported on the effect of heater temperature, background doping, and annealing cycle on precipitate size, density, and location in the superficial Si layer. Precipitates were not eliminated with our processing conditions, but various authors have recently reported that high temperature annealing of SIMOX, from 1250°C to 1405°C, eliminates virtually all precipitates in the superficial Si layer. However, in those studies there were significant differences in implantation energy and dose and also annealing time and temperature. Here we are reporting on the effect of annealing time and temperature on the formation and changes in precipitates.

Effect of Implantation Conditions on the Microstructure of High-Current, Oxygen Implanted Silicon-on-Insulator Material

1989 ◽  
Vol 157 ◽  
Author(s):  
S. Visitsemgtrakul ◽  
B.F. Cordts ◽  
S. Krause
Keyword(s):  
Defect Formation ◽  
Silicon Layer ◽  
High Resolution Electron Microscopy ◽  
Silicon On Insulator ◽  
Structural Development ◽  
Implantation Temperature ◽  
Resolution Electron ◽  
Significant Difference ◽  
New Type ◽  
Current Densities

ABSTRACTConventional and high resolution electron microscopy were used to study structural development in silicon-on-insulator material produced by oxygen implantation at temperatures of 525 to 700°C, doses of 0.3 to 1.8 × 1018 cm-2, and current densities of 1 and 10 mA/cm2. Implantation temperature has the strongest effect on the microstructure and defect formation, both in as-implanted and annealed material. In the top silicon layer of as-implanted SIMOX, oxygen bubbles form near the surface when the wafer temperature is ≥ 550°C. A new type of defect, the multiply faulted defect (MFD), has been observed at the upper edge of the implantation region with a density of 108 cm-2 in the samples implanted at the temperature of ≥ 600°C. As dose increases from 0.3 to 1.8 × 1018 cm-2, the bubbles grow larger and the trails of bubbles lengthen while the character and density of MFDs remain the same. A continuous buried oxide layer forms at doses ≥ 1.5 × 1018 cm2. No significant difference in structure is observed when a current-density increases from 1 to 10 mA/cm2.

Reduction of Secondary Defects in High Energy O-Implanted Si by High Energy Si Irradiation

1992 ◽  
Vol 279 ◽  
Author(s):  
S. L. Ellingboe ◽  
M. C. Ridgway
Keyword(s):  
High Temperature ◽  
Defect Structure ◽  
Low Dose ◽  
Defect Formation ◽  
Volume Fraction ◽  
High Energy ◽  
High Dose ◽  
High Temperature Annealing ◽  
Before And After ◽  
Secondary Defect

ABSTRACTThe effect of 4.2 MeV, low dose Si irradiation before annealing of 1 MeV, high dose O-implanted Si has been studied. Si irradiation results in differences in the defect structure both before and after high temperature annealing. With no Si irradiation, annealing results in polycrystalline Si (polySi) formation and microtwinning at the front SiO2/Si interface. With Si irradiation, the polySi volume fraction is greatly reduced after annealing, twinned Si having grown in its place. Si irradiation has no effect on Si inclusions within the SiO2 layer. The dependence of secondary defect formation on Si dose and implant temperature is presented. In particular, Si irradiation at low implant temperatures (150°C) and moderate doses (5×1016 cm−2) is shown to be most effective in the reduction of the polySi volume fraction at the front SiO2/Si interface.

4–20mA optical sensor at 300C using SiC and SOI integrated circuits

2021 ◽  
Vol 2021 (HiTEC) ◽  
pp. 000008-000012
Author(s):  
Cheng-Po Chen ◽  
Emad Andarawis
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Optical Sensor ◽  
Room Temperature ◽  
Silicon On Insulator ◽  
Test Results ◽  
Compression Technique ◽  
Gain Compression ◽  
Hybrid Circuit

Abstract GE is reporting test results from a hybrid circuit using high temperature capable resistors, capacitors, silicon carbide devices and silicon-on-insulator integrated circuits. The sensing circuit converts photodiode current to an industrial standard 4 to 20 mA output using a two wire configuration. Input currents at levels from 0pA to 30nA is converted to 4 to 20 mA using a gain compression technique and tested from room temperature to 300°C. Further, we show the circuit operating at 300°C for more than 2000 hours without failure.

High Temperature Silicon Integrated Circuits and Passive Components for Commercial and Military Applications

1999 ◽  
Vol 121 (4) ◽  
pp. 622-628 ◽  
Author(s):  
R. R. Grzybowski ◽  
B. Gingrich
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
Elevated Temperatures ◽  
Silicon On Insulator ◽  
Passive Component ◽  
Oil Well ◽  
Automotive Electronics ◽  
Passive Components ◽  
Silicon Integrated Circuits

Advances in silicon-on-insulator (SOI) integrated circuit technology and the steady development of wider band gap semiconductors like silicon carbide are enabling the practical deployment of high temperature electronics. High temperature civilian and military electronics applications include distributed controls for aircraft, automotive electronics, electric vehicles and instrumentation for geothermal wells, oil well logging, and nuclear reactors. While integrated circuits are key to the realization of complete high temperature electronic systems, passive components including resistors, capacitors, magnetics, and crystals are also required. This paper will present characterization data obtained from a number of silicon high temperature integrated evaluated over a range of elevated temperatures and aged at a selected high temperature. This paper will also present a representative cross section of high temperature passive component characterization data for device types needed by many applications. Device types represented will include both small signal and power resistors and capacitors. Specific problems encountered with the employment of these devices in harsh environments will be discussed for each family of components. The goal in presenting this information is to demonstrate the viability of a significant number of commercially available silicon integrated circuits and passive components that operate at elevated temperatures as well as to encourage component suppliers to continue to optimize a selection of their product offerings for operation at higher temperatures. In addition, systems designers will be encouraged to view this information with an eye towards the conception and implementation of reliable and affordable high temperature systems.

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