Effect of Substrate Misorientation on Heteroepitaxy with Large Lattice Mismatch: Ag/Si(111)

1989 ◽  
Vol 160 ◽  
Author(s):  
D.C. McKenna ◽  
K.-H. Park ◽  
G.-C. Wang ◽  
G.A. Smith
Keyword(s):  
Misorientation Angle ◽  
Lattice Mismatch ◽  
Epitaxial Films ◽  
Misalignment Angle ◽  
Si Substrates ◽  
Ion Channeling ◽  
Flat Substrate ◽  
Surface Normal ◽  
Large Lattice ◽  
Large Lattice Mismatch

AbstractEpitaxial films of Ag(111) were grown by Molecular Beam Epitaxy (MBE) on small angle misoriented Si(111) substrates. The surface normal was tilted 0 to 6° away from the Si(111) axis toward the [112] direction. The structure of the films was analyzed by x-ray diffraction and MeV He+ ion channeling. Despite a large lattice mismatch, good quality epitaxial films, 600–1200 Å thick, were grown on the misoriented Si substrates. Interestingly, the angle between the Si(111) axis of the substrate and the Ag(111) axis of the film (the misalignment angle) is not zero. In contrast to the perfect alignment on a flat substrate, the Ag(111) axis is tilted away from the Si(111) axis toward the surface normal. Axial MeV He+ ion channeling shows the misalignment angle (up to .6°) increases with substrate misorientation angle (~1/10 substrate misorientation angle).

Growth and properties of epitaxial PbSe on Si(111) and Si(100) without buffer layer

1995 ◽  
Vol 379 ◽  
Author(s):  
P. Müller ◽  
A.N. Tiwari ◽  
H. Zogg
Keyword(s):  
Buffer Layer ◽  
Lattice Mismatch ◽  
Infrared Detector ◽  
Device Fabrication ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
High Quality ◽  
Si Substrates ◽  
Large Lattice ◽  
Large Lattice Mismatch

Narrow gap IV-VI materials like PbS, PbSnSe and PbSnTe are used for infrared detector device fabrication [1,2]. Earlier an intermediate Ila-fluoride buffer layer, which consisted of a BaF2/CaF2-stack of about 2000 Å thickness, was used to get epitaxial high quality layers on silicon substrates. This buffer is now reduced to a much thinner layer of only about 20 Å thick CaF2, regardless the large lattice mismatch between layer and substrate [3,4,5]. The question therefore arises if high quality IV-VI layers can be grown on Si-substrates without any buffer layer as e.g. in CdTe/Si or GaAs/Si systems.The aim of this work is to grow IV-VI layers directly on Si-substrates without any buffer layers to study the growth kinetics and epitaxial quality. PbSe was chosen as a representant of IV-VI materials, and layers were grown on (111)- and (100)-oriented silicon substrates.

Growth of GaAs on Si and its Application to FETs and LEDs

1986 ◽  
Vol 67 ◽  
Author(s):  
Masahiro Akiyama ◽  
Yoshihiro Kawarada ◽  
Seiji Nishi ◽  
Takashi Ueda ◽  
Katsuzo Kaminishi
Keyword(s):  
Buffer Layer ◽  
Lattice Mismatch ◽  
Antiphase Domain ◽  
Thin Layers ◽  
The Other ◽  
Heteroepitaxial Growth ◽  
Si Substrates ◽  
Large Lattice ◽  
Strained Layer Superlattice ◽  
Large Lattice Mismatch

In recent years, the heteroepitaxial growth of GaAs layers on Si substrates has been gained an increasing interest [1 - 14]. GaAs is one of the most important III-V materials and has been well studied and used for optical and electrical devices. On the other hand, with Si we have large size wafers of superior quality and sophisticated technologies and Si is a main material for semiconductor industries. Therefore, GaAs/Si system has possibilities for realizing new types of functional devices or ICs with GaAs and Si devices. This system, however, has two serious problems. One is the large lattice mismatch of about 4 % between these materials and the other is the polar on nonpolar problem i.e., the formation of an antiphase domain disorder. It was reported that when (211)-oriented Si substrates were used, there was no problem of the formation of an antiphase domain structure 5. For growing materials on lattice mismatched substrates, it was reported that the thin layers deposited at low temperatures were effective to relax the lattice mismatches for the systems such as SiC on Si[15] and Si on saphire [16]. In GaAs/Si system, the Ge buffer layer has been used to relax the lattice mismatch[17 - 22] It was also reported that the composite strained layer superlattice with GaP/GaAsP and GaAsP/GaAs was very effective as a buffer layer[23 - 25].

Strain Relief in SrF2 Epitaxial Films on Si(111) Substrates

1992 ◽  
Vol 263 ◽  
Author(s):  
Weidan Li ◽  
Anthony P. Taylor ◽  
Leo J. Schowalter
Keyword(s):  
Film Thickness ◽  
Lattice Mismatch ◽  
Strained Layers ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial ◽  
Ion Channeling ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Relationship Of ◽  
First Time

ABSTRACTMolecular beam epitaxial (MBE) growth condition of SrF2 directly on Si(111) substrates has been optimized in terms of both Xmin and the surface morphology. Lattice distortion measurements were carried out with ion channeling along off-normal channeling directions in the strained layers grown at the optimal condition. The relationship of residual strain vs. film thickness for SrF2 on Si(111) was provided by the first time. The experimental data demonstrated a special thickness in this relation, at which the derivative of strain vs. film thickness changes its sign. This unique behavior was understood as the result of competition between the large lattice mismatch and the large thermal mismatch between SrF2 and Si.

Epitaxial Growth of 3C-SiC on T-shape columnar Si Substrates

2004 ◽  
Vol 815 ◽  
Author(s):  
S. Nishino ◽  
A. Shoji ◽  
T. Nishiguchi ◽  
S. Ohshima
Keyword(s):  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
Defect Density ◽  
Misfit Dislocations ◽  
High Electron ◽  
Large Area ◽  
Si Substrates ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Cubic Silicon Carbide

AbstractCubic silicon carbide (3C-SiC) is a suitable semiconductor material for high temperature, high power and high frequency electronic devices, because of its wide bandgap, high electron mobility and high saturated electron drift velocity. The usage of Si substrates has the advantage of large area substrates for the growth of 3C-SiC layers. However, large lattice mismatch between 3C-SiC and Si (>20%) has caused the generation of defects such as misfit dislocations, twins, stacking faults and threading dislocations at the SiC/Si interface. Lateral epitaxial overgrowth (ELOG) of 3C-SiC on Si substrates using SiO2 has been reported to reduce the defect density. In this report, epitaxial growth of 3C-SiC on T-shape patterned (100) Si substrates has been investigated to reduce interfacial defects.

Channeling Study of Partially Ionized Beam Deposited Epitaxial Ag Films on Si(111) Substrates

1990 ◽  
Vol 201 ◽  
Author(s):  
H.-S. Jin ◽  
L. You ◽  
T.-M. Lu
Keyword(s):  
Lattice Mismatch ◽  
Defect Density ◽  
Energetic Ions ◽  
Ion Channeling ◽  
Large Lattice ◽  
Axial Channeling ◽  
Large Lattice Mismatch ◽  
Lattice Damage ◽  
Partially Ionized ◽  
Ag Film

AbstractAg films deposited on Si(111) substrates by partially ionized beam (PIB) under conventional vacuum conditions were studied by MeV ion channeling techniques. In spite of their large lattice mismatch (24.8%), Ag films were still found to be epitaxial. With a deposition temperature of 350°C and without post-annealing, the Xmin value at the surface of a 2550 A° thick Ag film was found to be 10%. The azimuthal angular scan and the measured axial channeling dip showed that the Ag film was (111) oriented. The lattice quality of the films was comaparable to that deposited by MBE techniques. Dislocations were found in the PIB deposited Ag films. Lattice damage due to the bombardment of energetic ions was also observed. The thickness of the Ag film was found to have a pronounced effect on the crystalline quality at the surface. With the thickness increasing from 1240 A° to 2550 A°, the lattice quality at the Ag surface improved significantly, but not much change in the defect density in the Ag films was obseved.

Growth and Characterization of CuInSe2 Epitaxial Films for Device Applications

1996 ◽  
Vol 426 ◽  
Author(s):  
S. Niki ◽  
T. Kurafuji ◽  
P. J. Fons ◽  
I. Kim ◽  
O. Hellman ◽  
...  
Keyword(s):  
Lattice Mismatch ◽  
Free Exciton ◽  
Epitaxial Films ◽  
Cross Sectional ◽  
Residual Defect ◽  
Transmission Electron ◽  
Large Lattice ◽  
Device Applications ◽  
Large Lattice Mismatch ◽  
Lattice Matched

AbstractCuInSe2 (CIS) epitaxial layers have been grown on both GaAs (001) and In0.29Ga0.71 As pseudo lattice-matched substrates by molecular beam epitaxy, and characterized for device applications. Despite a large lattice mismatch of Δa/a˜2.2%, epitaxial growth of CuInSe2 has been demonstrated on GaAs (001) showing their film properties strongly dependent on the Cu/In ratio. In-rich films had a large number of twins on {112} planes, and were found to be heavily compensated. On the other hand, Cu-rich films showed distinct photoluminescence emissions indicating significantly higher film quality in comparison with In-rich films. Two dimensional reciprocal x-ray intensity area mapping and cross-sectional transmission electron microscopy showed the formation of an interfacial layer in the vicinity of the CuInSe2/GaAs interface resulting from the strain-induced interdiffusion between CuInSe2 and GaAs. Reduction in lattice mismatch to Δa/a˜0.2% by using In0.29Ga0.71As pseudo lattice-matched substrates made possible the growth of high quality CuInSe2 with predominant free exciton emissions in their photoluminescence spectra and with residual defect densities of as low as p˜l×1017cm-3 implying the growth of device quality CuInSe2 epitaxial films.

The Control of Epitaxial Growth of LiNbO3 Thin Films on R-Cut Sapphire

1991 ◽  
Vol 243 ◽  
Author(s):  
Norifumi Fujimura ◽  
Masami Kakinoki ◽  
Taichiro Ito
Keyword(s):  
Strong Influence ◽  
Lattice Mismatch ◽  
Lithium Concentration ◽  
Epitaxial Films ◽  
Rf Power ◽  
Growth Orientation ◽  
Bonded Materials ◽  
Covalently Bonded ◽  
Large Lattice ◽  
Large Lattice Mismatch

AbstractIt is argued that epitaxial films of ionically-bonded materials are more easily achieved than of covalently bonded materials. Good epitaxy can be achieved despite relatively large lattice mismatch with respect to the substrate. However, the strong influence of interfacial energy can result in difficulty in controlling the orientation of epitaxial films.The crystallographic orientation of ionically-bonded LiNbO3 films was therefore studied. Growth orientation could be controlled by paying attention to the bonding between octahedra in the structure, and to the formation of the octahedra containing lithium and niobium ions. Lithium concentration could be increased by increasing the rf power, 02 partial pressure and total gas pressure, and decreasing the substrate temperature during deposition.The orientation of the film changed from (012) to (100) via (110) by increasing the Li concentration in the film. The (012) and (100) films were epitaxial with respect to the substrate. In particular, the (100) films were of exce lent quality, being single crystalline with smooth surfaces.

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