Channeling Study of Partially Ionized Beam Deposited Epitaxial Ag Films on Si(111) Substrates

1990 ◽  
Vol 201 ◽  
Author(s):  
H.-S. Jin ◽  
L. You ◽  
T.-M. Lu
Keyword(s):  
Lattice Mismatch ◽  
Defect Density ◽  
Energetic Ions ◽  
Ion Channeling ◽  
Large Lattice ◽  
Axial Channeling ◽  
Large Lattice Mismatch ◽  
Lattice Damage ◽  
Partially Ionized ◽  
Ag Film

AbstractAg films deposited on Si(111) substrates by partially ionized beam (PIB) under conventional vacuum conditions were studied by MeV ion channeling techniques. In spite of their large lattice mismatch (24.8%), Ag films were still found to be epitaxial. With a deposition temperature of 350°C and without post-annealing, the Xmin value at the surface of a 2550 A° thick Ag film was found to be 10%. The azimuthal angular scan and the measured axial channeling dip showed that the Ag film was (111) oriented. The lattice quality of the films was comaparable to that deposited by MBE techniques. Dislocations were found in the PIB deposited Ag films. Lattice damage due to the bombardment of energetic ions was also observed. The thickness of the Ag film was found to have a pronounced effect on the crystalline quality at the surface. With the thickness increasing from 1240 A° to 2550 A°, the lattice quality at the Ag surface improved significantly, but not much change in the defect density in the Ag films was obseved.

Strain Relief in SrF2 Epitaxial Films on Si(111) Substrates

1992 ◽  
Vol 263 ◽  
Author(s):  
Weidan Li ◽  
Anthony P. Taylor ◽  
Leo J. Schowalter
Keyword(s):  
Film Thickness ◽  
Lattice Mismatch ◽  
Strained Layers ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial ◽  
Ion Channeling ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Relationship Of ◽  
First Time

ABSTRACTMolecular beam epitaxial (MBE) growth condition of SrF2 directly on Si(111) substrates has been optimized in terms of both Xmin and the surface morphology. Lattice distortion measurements were carried out with ion channeling along off-normal channeling directions in the strained layers grown at the optimal condition. The relationship of residual strain vs. film thickness for SrF2 on Si(111) was provided by the first time. The experimental data demonstrated a special thickness in this relation, at which the derivative of strain vs. film thickness changes its sign. This unique behavior was understood as the result of competition between the large lattice mismatch and the large thermal mismatch between SrF2 and Si.

Epitaxial Growth of 3C-SiC on T-shape columnar Si Substrates

2004 ◽  
Vol 815 ◽  
Author(s):  
S. Nishino ◽  
A. Shoji ◽  
T. Nishiguchi ◽  
S. Ohshima
Keyword(s):  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
Defect Density ◽  
Misfit Dislocations ◽  
High Electron ◽  
Large Area ◽  
Si Substrates ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Cubic Silicon Carbide

AbstractCubic silicon carbide (3C-SiC) is a suitable semiconductor material for high temperature, high power and high frequency electronic devices, because of its wide bandgap, high electron mobility and high saturated electron drift velocity. The usage of Si substrates has the advantage of large area substrates for the growth of 3C-SiC layers. However, large lattice mismatch between 3C-SiC and Si (>20%) has caused the generation of defects such as misfit dislocations, twins, stacking faults and threading dislocations at the SiC/Si interface. Lateral epitaxial overgrowth (ELOG) of 3C-SiC on Si substrates using SiO2 has been reported to reduce the defect density. In this report, epitaxial growth of 3C-SiC on T-shape patterned (100) Si substrates has been investigated to reduce interfacial defects.

Effect of Substrate Misorientation on Heteroepitaxy with Large Lattice Mismatch: Ag/Si(111)

1989 ◽  
Vol 160 ◽  
Author(s):  
D.C. McKenna ◽  
K.-H. Park ◽  
G.-C. Wang ◽  
G.A. Smith
Keyword(s):  
Misorientation Angle ◽  
Lattice Mismatch ◽  
Epitaxial Films ◽  
Misalignment Angle ◽  
Si Substrates ◽  
Ion Channeling ◽  
Flat Substrate ◽  
Surface Normal ◽  
Large Lattice ◽  
Large Lattice Mismatch

AbstractEpitaxial films of Ag(111) were grown by Molecular Beam Epitaxy (MBE) on small angle misoriented Si(111) substrates. The surface normal was tilted 0 to 6° away from the Si(111) axis toward the [112] direction. The structure of the films was analyzed by x-ray diffraction and MeV He+ ion channeling. Despite a large lattice mismatch, good quality epitaxial films, 600–1200 Å thick, were grown on the misoriented Si substrates. Interestingly, the angle between the Si(111) axis of the substrate and the Ag(111) axis of the film (the misalignment angle) is not zero. In contrast to the perfect alignment on a flat substrate, the Ag(111) axis is tilted away from the Si(111) axis toward the surface normal. Axial MeV He+ ion channeling shows the misalignment angle (up to .6°) increases with substrate misorientation angle (~1/10 substrate misorientation angle).

Structural Effects in Al(111)/Si(111) Heteroepitaxy by Partially Ionized Beam Deposition α

1988 ◽  
Vol 116 ◽  
pp. 465-470 ◽  
Author(s):  
A. S. Yapsir ◽  
C.-H. Choi ◽  
S. N. Yang ◽  
T.-M. Lu ◽  
M. Madden ◽  
...  
Keyword(s):  
Single Crystal ◽  
Lattice Mismatch ◽  
X Ray Diffraction ◽  
Tem Analysis ◽  
Atom Ratio ◽  
Transmission Electron ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Partially Ionized ◽  
Acceleration Voltage

AbstractSingle crystal Al(111) films were grown on Si(111) surface at room temperature under a conventional vacuum condition using the partially ionized beam (PIB) deposition technique. The Al films were deposited with an ion to atom ratio of about 0.3% and an acceleration voltage of 1 kV. Transmission electron microscopy (TEM) analysis showed that the as-deposited films were single crystal with certain density of dislocation networks. These dislocations disappeared following a heat treatment at 450°C for 30 min. From X-ray diffraction and TEM patterns, it was observed that the Al(111) was aligned to the substrate with Al<1l0>//Si<1l0>. Possible mechanisms of the PIB epitaxial growth and a novel structural defect that is unique to this large lattice mismatch system are discussed.

Interfacial Structure and Defects in GaN/AlGaN Heterojunction Epitaxially Grown on LiGa02 Substrate by Molecular Beam Epitaxy

2000 ◽  
Vol 6 (S2) ◽  
pp. 1106-1107
Author(s):  
Z. R. Dai ◽  
Sangbeom Kang ◽  
W. Alan Doolittle ◽  
Z. L. Wang ◽  
April S. Brown
Keyword(s):  
Lattice Mismatch ◽  
Defect Density ◽  
Field Effect Transistors ◽  
High Electron Mobility Transistors ◽  
Interfacial Structure ◽  
High Electron ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Average Lattice ◽  
Lithium Gallate

The performance of III-Nitride based Light Emitting Diodes (LEDs), LASERs, GaN/AlGaN MODFETs (Modulation-doped Field Effect Transistors) and HEMTs (High Electron Mobility Transistors) have been improved dramatically over the past few years [1,2], despite the relatively poor material quality of GaN, as compared to GaAs, for example. The intrinsic properties of the materials system make it extremely well suited to both optoelectronic and microwave power transistor applications. Typically, GaN is grown on substrates such as GaAs, Al2O3 (sapphire) or SiC with large lattice mismatch. This has usually resulted in an extremely high defect density in the GaN layer. The growth of GaN on lithium gallate LiGaO2 (LGO) affords many advantages compared to all other available substrates. LGO offers the smallest average lattice mismatch of any available substrate for the Ill-nitrides. This facilitates the growth of high quality GaN directly on Lithium Gallate without the need for a defective buffer to decouple the strain associated with the large lattice mismatch of other substrates [3].

Epitaxial Growth of Thick Ag/Si(111) Films

1987 ◽  
Vol 102 ◽  
Author(s):  
K.-H. Park ◽  
H.-S. Jin ◽  
L. Luo ◽  
W.M. Gibson ◽  
G.-C. Wang ◽  
...  
Keyword(s):  
Pole Figure ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Rutherford Backscattering Spectrometry ◽  
Twin Structure ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Large Lattice ◽  
Axial Channeling ◽  
Large Lattice Mismatch

ABSTRACT600∼4000Å thick Ag films grown on 3∼4· misoriented Si(111) substrates by molecular beam epitaxy (MBE) technique have been studied by using x-ray pole-figure analysis and MeV He+ Rutherford Backscattering Spectrometry (RBS)/channeling technique. X-ray pole-figure measurements revealed that despite the large lattice mismatch (∼25%) between Ag and Si, Ag films with epitaxial relationship Ag(111)//Si(111):Ag[011]//Si[011] were grown with a small quantity (15∼20%) of twin structure. The <111> axial channeling minimum yield (Xmin) is reduced at the Ag surface as the Ag film thickness increases. These films were thermally stable up to 500°C annealing but the twinning disappeared after annealing

scholarly journals Enhanced luminescence/photodetecting bifunctional devices based on ZnO:Ga microwire/p-Si heterojunction by incorporating Ag nanowires

2021 ◽  
Author(s):  
Mingming Jiang ◽  
Yang Liu ◽  
Ruiming Dai ◽  
Kai Tang ◽  
Peng Wan ◽  
...  
Keyword(s):  
Band Gap ◽  
Carrier Mobility ◽  
Lattice Mismatch ◽  
Semiconductor Materials ◽  
Large Lattice ◽  
Ag Nanowires ◽  
Large Lattice Mismatch ◽  
Enhanced Luminescence ◽  
Indirect Band Gap

Suffering from the indirect band gap, low carrier mobility, and large lattice mismatch with other semiconductor materials, one of the current challenges in Si-based materials and structures is to prepare...

High mobility AlGaN/GaN heterostructures grown on Si substrates using a large lattice-mismatch induced stress control technology

2015 ◽  
Vol 106 (14) ◽  
pp. 142106 ◽  
Author(s):  
Jianpeng Cheng ◽  
Xuelin Yang ◽  
Ling Sang ◽  
Lei Guo ◽  
Anqi Hu ◽  
...  
Keyword(s):  
Lattice Mismatch ◽  
High Mobility ◽  
Control Technology ◽  
Stress Control ◽  
Si Substrates ◽  
Induced Stress ◽  
Large Lattice ◽  
Large Lattice Mismatch

Epitaxial Growth of Copper, Silver and Gold on a Semiconducting Layered Material: Tungsten Disulfide

1987 ◽  
Vol 102 ◽  
Author(s):  
D. L. Doering ◽  
F. S. Ohuchi ◽  
W. Jaegermann ◽  
B. A. Parkinson
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
Layered Material ◽  
Tungsten Disulfide ◽  
Layer By Layer ◽  
Metal Contacts ◽  
Layered Semiconductor ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe growth of copper, silver and gold thin films on tungsten disulfide has been examined as a model of metal contacts on a layered semiconductor. All three metals were found to grow epitaxially on the WS2. However, Cu appears to form a discontinuous film while Au and Ag grow layer by layer. Such epitaxial growth is somewhat surprising since there is a large lattice mismatch between the metals and the WS2.

III-V monolithic resonant photoreceiver using local epitaxy and large lattice mismatch material

1991 ◽  
Vol 4 (6) ◽  
pp. 217-219 ◽  
Author(s):  
S. Aboulhouda ◽  
J. P. Vilcot ◽  
M. Razeghi ◽  
D. Decoster ◽  
M. Francois ◽  
...  
Keyword(s):  
Lattice Mismatch ◽  
Large Lattice ◽  
Large Lattice Mismatch
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